Supporting information for:
A Facile Method for the Production of SnS Thin Films from Melt
Reactions
Mundher Al-Shakban†, Zhiqiang Xie†, Nicky Savjani‡, Azad Malik†, Paul O’Brien†‡*
†
School of Materials and ‡School of Chemistry, University of Manchester, Oxford Road,
Manchester, M13 9PL, United Kingdom.
* Tel – (+44)161 2754652; E-mail - Paul.O’[email protected]
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1) TGA analysis of [Sn(S2COEt)2] and predicted decomposition
Figure S1. Thermogram for the decomposition of [Sn(S2COEt)2]. The final residual weight
(44.1 %) is close to the predicted value for residual SnS (41.8%).
Scheme S1. The proposed decomposition mechanism of [Sn(S2COEt)2], which is thought to
break down following the Chugaev elimination mechanism of metal xanthates].
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2) IR spectrum [Sn(S2COEt)2]
Figure S2. ATR-FTIR spectrum of the precursor [Sn(S2COEt)2]
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3) SEM and EDX images of SnS thin films
Figure S3. (a-e) SEM images of SnS films grown on glass substrates from [Sn(S2COEt)2] at
(a) 150 °C, (b) 200 °C (c) 250 °C (d) 300 °C and (e) 400 °C. (a1-e1) and (a2-e2) are the
elemental maps of the SnS film produced at the given temperatures.
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4) Absorption coefficient of SnS thin films
Figure S4. Absorption coefficient of SnS films grown on glass substrates from [Sn(S2COEt)2]
decomposed at temperatures between 200 and 400 °C.
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