N
Silicone Thermal Gel (Paste-Type)
N
ATIO
ADVA
BR
D ANTIVI
CE
C
OM
www.vibrationmounts.com Phone: 516.328.3662 Fax: 516.328.3365
• MATERIAL:
8
Thermal Conductivity
W/m • k
Mfgr.
Tests
Hot Wire
Method*
V30Z63MDP100
6.5
2.1
V30Z63MDP200
4.8
1.6
V30Z63MDP300
S
Soft Paste-Type Gel
RoHS Controlled Substance: Assayed by SGS Far East Ltd.
Metric
FEATURES:
•• Soft Paste-type (grease) gel with heat-conducting 14properties.
•• High specific volume resistance ratio up to 7.2x10 Ω • cm
•• Low dissipation factor down to 0.0004 at 1MHz
•• High breakdown voltage up to 9.6 kv/mm
Catalog Number
PONENT
4.8
Gel
Color
Gray
Paste
White
Paste
1.6
APPLICATIONS
•• GAPS AROUND HEAT SOURCES SUCH AS HIGH-PERFORMANCE SEMICONDUCTORS
•• SURFACE, UNDERSIDE, AND LEAD LINES OF HEAT
SOURCES SUCH AS IC's
•• SOURCES OF HEAT WHERE IT IS DIFFICULT TO FIX
SHEET-TYPE THERMAL GEL.
Specific
Gravity
Hardness Cone
Penetration
1/10 mm
not mixed
Specific Volume
Resistance
Ratio
Ω • cm
50 Hz
1 kHz
2.8
51
5.9 x 1013
8.9
7.8
2.6
55
7.2 x 1014
7.6
60
1014
4.4
2.7
Low Molecular Weight
Siloxane Level ΣD4 - 10 ppm
Catalog Number
Delectric
Breakdown
Voltage
kV/mm
Solvent Extraction
Method
Head Space
Method at 70°C
V30Z63MDP100
5.0
< 700
<1
V30Z63MDP200
5.6
< 900
<3
V30Z63MDP300
9.6
< 300
<1
*Test performed using the QTM-500 meter, Kyoto Electronics Manufacturing Co. LTD.
Temperature
Range Δ
°C (°F)
-40 to +200
(-40 to +392)
-40 to +150
(-40 to +302)
-40 to +120
(-40 to +248)
ΔWarning: Test before use under actual conditions. Temperature range may vary with application.
Pads
8-14
1.4 x
Dielectric Constant
Size
30 cc Syringe
(1.01 US fluid oz.)
1 MHz
Dielectric Dissipation
50 Hz
1 kHz
1 MHz
7
0.234
0.061
0.015
6.7
6.6
0.017
0.007
0.005
4.2
4
0.005
0.004
0.0004
S
www.vibrationmounts.com Phone: 516.328.3662 Fax: 516.328.3365
0.2
0.1
0
0
1
2
3
4
5
Clamping torque (N•m)
6
Test frequency: 10Hz
105
Complex Modulus
104
Damping factor: tan δ
103
102
-60 -40 -20
0
Transistor: MT-200 Type
Area: 7.7 cm2
0.3
0.2
0.1
0
0
1
2
3
4
5
Clamping torque (N•m)
6
Complex Modulus (Pa)
Thickness (mm)
V30Z63MDP200
CLAMPING TORQUE DEPENDENCY
10
10
5
10
4
0.2
0.1
0
0
1
2
3
4
5
Clamping torque (N•m)
6
Complex Modulus (Pa)
Thickness (mm)
0.3
102
-60 -40 -20
101
10-0
80 100 120 140 160 180 200
Complex Modulus
Damping factor: tan δ
0
20
40
60
10
101
10-0
Test frequency: 10Hz
Complex Modulus
4
Damping factor: tan δ
0
20
mm (in.)
Thermal
Resistance
°C/W
0.15 (.006)
0.13
0.2 (.008)
0.15
0.3 (.012)
0.18
Transistor: MT-200 Type; Heat Input: 20W
Thickness
mm (in.)
Thermal
Resistance
°C/W
0.1 (.004)
0.13
0.2 (.008)
0.17
0.3 (.012)
0.22
Temperature (°C)
THERMAL RESISTANCE
THERMAL DEPENDENCY
102
-60 -40 -20
Thickness
THERMAL RESISTANCE
2
80 100 120 140 160 180 200
6
103
Transistor: MT-200 Type; Heat Input: 20W
Temperature (°C)
105
10
60
Test frequency: 10Hz
103
10
40
102
THERMAL DEPENDENCY
6
V30Z63MDP300
CLAMPING TORQUE DEPENDENCY
Transistor: MT-200 Type
Area: 7.7 cm2
20
THERMAL RESISTANCE
40
60
10
2
101
10-0
80 100 120 140 160 180 200
Transistor: MT-200 Type; Heat Input: 20W
mm (in.)
Thermal
Resistance
0.1 (.004)
0.09
0.2 (.008)
0.17
0.3 (.012)
0.25
Thickness
°C/W
8
Temperature (°C)
Pads
Transistor: MT-200 Type
Area: 7.7 cm2
0.3
THERMAL DEPENDENCY
106
Complex Modulus (Pa)
Thickness (mm)
V30Z63MDP100
CLAMPING TORQUE DEPENDENCY
Damping Factor (tan δ)
PONENT
Damping Factor (tan δ)
C
OM
Silicone Thermal Gel (Paste-Type)
Damping Factor (tan δ)
N
N
ATIO
ADVA
BR
D ANTIVI
CE
8-15
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