22nd International Symposium on Plasma Chemistry July 5-10, 2015; Antwerp, Belgium Polymer film deposition of TMDSO using an atmospheric pressure DBD plasma jet C. Vivien1, E. Robert2, P. Supiot1 and J.-M. Pouvesle2 1 Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR CNRS 8520, Université Lille I Sciences et Technologies, Villeneuve d’Ascq, France 2 GREMI – UMR CNRS 7344, Université d’Orléans, Orléans, France Abstract: The present work deals with plasma polymerisation of TetraMethylDiSilOxane with a Dielectric Barrier Discharge plasma jet at atmospheric pressure. Depending on parameters like voltage, frequency, carrier gas and monomer injection, the deposited polymer appears either as a gel-like coating or a transparent film with fringes. Deposits are characterized by Fourier Transformed IR spectroscopy and contact angle measurements. Keywords: atmospheric pressure DBD plasma jet, low temperature, plasma polymerisation, tetramethyldisiloxane 1. Introduction Plasma Enhanced Chemical Vapour Deposition (PECVD) processes have been used for decades for surface processing in a wide range of industrial applications like semiconductor films, low-k films, barrier diffusion, protective coatings, adhesion layers, hydrophilic or hydrophobic layers, etc... Most of these processes are usually realized under low pressure. Actually, a great and increasing interest in the development of plasma sources operating at atmospheric pressure (AP), firstly for easy surface treatments [1], offered the capability to develop PECVD under AP and non-thermal conditions. Such processes have been studied intensively focusing mainly on polymers, oxides, and carbon materials using common gases (He, Ar, N 2 , air, CxHy…) and liquid monomer sources [2-5]. According to a specific purpose, any specific monomer can be selected and can be more or less preserved according to the power input in the plasma. Plasma polymerisation offers many possibilities of applications and intensive research is still running on this subject. The Atmospheric Pressure Dielectric Barrier Discharge (AP-DBD) Plasma Gun device, developed by GREMI laboratory, allows rare gas plasma propagation along small tubes and was firstly reported for biomedical purposes [6]. This device shows several advantages with respect to other excitation systems: a) much smaller rare gas flow-rates, b) the possibility to separate the plasma source from the injection mixing point of admixed gases (nitrogen or oxygen) or precursor vapour allowing an enhanced discharge stability, c) good gas mixing properties favouring significant precursor flow-rates for the forthcoming polymerization. This work deals with plasma polymerisation of TetraMethylDiSilOxane (TMDSO) with the AP-DBD Plasma Gun. Deposited layers are characterized by FTIR and contact angle measurements. P-III-5-52 2. Experimental set-up The AP-DBD Plasma Gun device used in this work was previously described and studied in details [6,7]. The plasma discharge is ignited in Helium under a constant flow rate of 1 slpm. The precursor used was the TetraMethylDiSilOxane (C 4 H 14 Si 2 O, 97%, Sigma Aldrich) was introduced in either liquid or gaseous state:. The liquid TMDSO flow rate was regulated by a peristaltic pump (Ismatec) while its vapour flow was ensured by bubbling nitrogen or oxygen with a fixed flow rate of 10 sccm. Microscope slides and polished Silicon wafer (100) were used as substrates. The process parameters are listed in Table 1 Table 1. Process parameters Precursor introduction Liquid Gaseous 14 14-20 0.5 ; 1; 2 0.5 ; 1 ; 2 ; 4 Helium (slpm) 1 1 Nitrogen or oxygen (sccm) / 10 Precursor (µL.min-1) 27 ; 54 / Deposition time (min) 5 ; 10 5 ; 10 6 3 ; 6 ; 9 ; 12 Voltage (kV) Frequency (kHz) Distance from the substrate (mm) Deposits were analysed by FTIR with a Perkin Elmer 2000 spectrometer. Spectra were performed in the wavenumber range 4000-400 cm-1 with a resolution of 4 cm-1. Contact angle measurements with water were carried out on the coatings using the static contact angle measurement with a PGX-plus goniometer. 1 polymerization can be seen through the presence of the broad band located between 1200-1000 cm-1, which is assigned to Si-O-Si asymmetric stretching mode. Then, a broad band around 3400 cm-1 shows the presence of OH stretching mode in Si-OH or H- bonded OH. [8] The IR spectrum of the deposited film with the APDBD Plasma Gun is very similar to those obtained in case of RPECVD at low pressure by Abou Rich et al.[9]. In a critical review, Merche et al. [3] underlined that different studies concluded that both methods lead to similarly deposited films properties. ν(Si-O-Si), ν(Si-O-C) Polymer film TMDSO ρ(CH3), ν(Si-C) δ(CH3)s ν(Si-H) A (a.u.) 3. Results and Discussion Visual aspect of the films The visual aspect of the deposited films depends on the deposition conditions. Three different types can be observed: translucent like frozen gelatin (Figure 1a), with a mixing of fringes and translucent form (Figure 1b) and transparent with thickness fringes (Figure 1c). In all cases, the films are not homogeneous in thickness, with the appearance of fringes and a highest thickness at the centre, decreasing to the edge. In both cases of monomer introduction (liquid or gaseous), increasing of the frequency makes the deposit more translucent like frozen gelatin and the deposited area increases with both process duration and the voltage. The introduction of the monomer in liquid phase induced more inhomogeneity of the deposit, compared to the films deposited with gaseous TMDSO injection. The polymerized coatings have been obtained at 500Hz in pure Helium with liquid TMDSO, and at 1 kHz with gaseous TMDSO, for a 10 minutes deposition duration and plasma tube edge-to-substrate distance ranging from 6 to 9 mm. ν(CH3)as ν(O-H) δ(CH3)as ν(CH3)s 4000 3800 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 -1 Wavenumber (cm ) (a) (b) (c) Figure 1. Visual aspect of the deposited films (a) translucent like frozen gelatin, (b) and (c) transparent with thickness fringes. Measurements of the films thicknesses have been performed with a profilometer. A thickness of 1 µm is reached at the middle of the deposit for the sample of shown in Figure 1c, FTIR analysis IR absorption spectroscopy was used to obtain information on chemical bonds present in the deposited films. The Figure 2 show FTIR spectra corresponding to the TMDSO monomer and a film deposited under the following conditions: 14 kV, 1kHz, gaseous TMDSO, 10sccm N 2 , a distance of 9 mm and a deposition duration of 5 min. IR spectrum of deposited film has absorption peaks common with those of the TMDSO monomer. This can be seen with the strong presence of methyl groups: the asymmetric and symmetric C-H stretch at 2960 and 2910 cm-1 respectively, the -CH 3 asymmetric and symmetric bending in Si-CH 3 at 1415 and 1260 cm-1 and two absorption bands at 900 and 800 cm-1 assigned to the methyl rocking mode and the Si-C stretching mode in Si(CH 3 ) 2 and the Si-H stretching mode is observed in the range 2300-2100 cm-1. The occurrence of the 2 Figure 2. FTIR spectra of the monomer TMDSO and a film deposited with gaseous TMDSO (see the corresponding text for conditions). Contact angle measurements Contact angle measurements with water have been made on both the translucent gelatin-like and the transparent deposited films. The water contact angle value for a microscope slide cleaned with ethanol is about 30 degrees. The measured value on all the deposited layers is varying from 75 to 85 degrees. There is no relation between the visual aspect and the contact angle value. For example, a film as shown in Figure 1a can have a contact angle of 85 degrees, while one as shown in Figure 1c can have a contact angle of 75 degrees, and vice versa. These value variations can be explained by the inhomogeneity of the deposited films. At this time, no clear correlation has been established between the different process parameters and the measured contact angle values. The measured values are coherent with the IRTF analyses: the spectra show a strong presence of methyl groups which mainly contribute to this moderate hydrophobic behaviour of the plasma-polymer deposits. P-III-6-52 4. Conclusion In this presented work, the TMDSO monomer has been polymerized using an Atmospheric Pressure DBD Plasma Gun working with Helium, and by varying discharge parameters. The first aim of this work was to demonstrate the possibility to deposit plasma polymer with such a plasma discharge. Deposited films analyses clearly show the efficiency of this plasma-type to polymerize the TMDSO and their similarity with those realized under low pressure RPECVD. The most interesting deposited films are obtained when the TMDSO monomer is introduced under gaseous phase: the homogeneity is better, but the influence of the nature of the gas for its transport is not evidenced. More experiments and analyses need to be achieved to complete these preliminary results. 5. Acknowledgements The authors would like to thank the so-called “Réseau Plasmas Froids” French Research Network for its financial support to this work. 6. References [1] C. Tendero, C. Tixier, P. Tristant, J. Desmaison and P. Leprince. Spectrochimica Acta Part B, 61, 2 (2006) [2] L. Bardos and H. Barankova. Thin Solid Films, 518, 6705 (2010) [3] D. Merche, N. Vandecasteele and F. Reniers. Thin Solid Films, 520, 4219 (2012) [4] F. Massines, C. Sarra-Bournet, F. Fanelli, N. Naudé and N. Gherardi. Plasma Process. Polym., 9, 1041 (2012) [5] H. Kakiuchi, H. Ohmi and K. Yasutake. Journal of Vacuum Science & Technology A, 32, (2014) [6] E. Robert, E. Barbosa, S. Dozias, M. Vandamme, C. Cachoncinlle, R. Viladrosa and J.M. Pouvesle. Plasma Process. Polym, 6, 795 (2009) [7] FR. WO2009050240 (2009), Centre National de la Recherche Scientifique (FR) and Université d’Orléans (FR), inventors: J. M. Pouvesle, C. Cachoncinlle, R. Viladrosa, A. Khacef, E.Robert, S. Dozias. [8] D. R. Anderson, ‘‘Infrared, Raman and UltraViolet spectroscopy’’, in: Analysis of silicones, A. Lee Smith, Eds., Wiley, New-York 1974, p. 247. [9] S. Abou Rich, V. Mille, C. Vivien, S. Godey and P. Supiot. Plasma Process. Polym., 7, 775 (2010) P-III-6-52 3
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