22nd International Symposium on Plasma Chemistry July 5-10, 2015; Antwerp, Belgium Effect of the radical species for gene transfection by discharge plasma irradiation Y. Ikeda1, H. Motomura1, Y. Kido1,2, S. Satoh1, 3, K. Tachibana4 and M. Jinno1 1 Department of Electrical and Electronic Engineering, Ehime University, 3 Bunkyo-cho, JP-790-8577 Matsuyama, Ehime, Japan 2 Pearl Kogyo Co. Ltd., 3-8-13 Minami-Kagaya, Suminoe-ku, JP-559-0015 Osaka, Japan 3 Y’s Corporation, 2-31-17 Minamino, Tama-shi, JP-206-0032 Tokyo, Japan 4 Department of Electrical and Electronic Engineering, Osaka Electro-Communication University - 18-8 Hatsucho, Neyagawa, JP-572-8530 Osaka, Japan Abstract: The authors investigated the factors for plasma gene transfection by changing protocols and looked at the time periods the factors become effective. The conclusion is that nearly 10% of transfections occur during plasma irradiation and that the last 90% of transfections occur after plasma irradiation is stopped. This second stage transfection is caused not only by the residual chemically reactive species, but also by plasma irradiation stress to cells and plasmids, i.e. possibly charging effect and oxidation stress. Keywords: gene transfection, atmospheric plasma, micro plasma, radical 1. Introduction Gene transfection is a technique of deliberately introducing nucleic acids into cells in order to give them specific characteristics. In practice, this can be achieved in three different ways: chemical method, physical method and the viral vector method. The chemical method for gene transfection was developed first in 1973 by Graham using calcium phosphate [1]. In 1987 Felgner developed the Lipofection method [2]. As a physical method in 1982, Neumann developed electroporation. With electroporation small holes are opened on the cell membrane by applying an electric pulse to the cell suspension and then the genes passes through those holes [3]. Although these two methods are available only for in vitro environments, the viral vector method is available for both in vivo and in vitro environments, so it is expected to be a practical method for gene therapy. The electroporation method is the most common technique in molecular biological and medical experiments in laboratories. This method achieves a high transfection rate, but it causes a lot of damage to the cells resulting in more than half of them dying by necrosis or apoptosis. The viral vector method provides both a high transfection rate and a high cell survival rate. However, the viral method has risks of pathogenicity expression or neoplastic transformation. Therefore, the development of a new safe and damage-free technique is in demand. Such a technique would be expected to play an important role in advanced medical technologies like gene therapy and regenerative medicine through establishment of iPS (induced pluripotent stem) cells. A technique that uses discharge plasma irradiation was invented by Satoh, who is one of the authors, and his group in 2002 [4] and was reported by Ogawa in 2005 [5]. Since this technique is free from adverse effect associated with viruses, there are P-III-10-10 no risks as the others mentioned above. The plasma irradiation on genes and cells induces the transfection process in which the genes and cells are exposed to discharge current, that is, ions and electrons fluxes, electric field, chemically active species such as radicals, etc. In the previous works [6-12], the authors have been trying various types of plasma for gene transfection. Recently, a small capillary copper tube with outer diameter of 70 µm is used as a HV (high voltage) electrode and a gas nozzle. Consequently high transfection rate and high cell survivability are achieved simultaneously for plasmid. On the other hand, the relationship between the plasma irradiation effects and the working mechanism by the cell has not been clear yet. Recently, the authors selectively investigate the effect of radicals as surface interactions among radicals, plasmid and cell membrane on transfection rate by washing out or adding the plasmid after plasma irradiation [13]. As a result, it is found that the transfection occurs not only during plasma irradiation but also after plasma irradiation. The result suggests the effects of residual radicals, the radical-induced active species or surface charges after plasma irradiation. In this paper, the authors more specifically investigate the timing in which the above species show the effect on the transfection. 2. Experimental Setup and Procedure 2.1. Experimental Setup As the target COS7 cells, which are taken from an African green monkey, are used. The COS7 cells are cultured in each well. Then 0.8 µg of pCX-EGFP plasmid diluted with Tris/EDTA (TE) buffer (0.4 µg/µl) is used. The plasma irradiation device is shown in Fig. 1. The high voltage (HV) electrode is made of copper, which 1 is a capillary with 70 m outer diameter and 20 µm inner diameter. The grounded (GND) electrode is copper plate and is placed on an XYZ-stage. A 96-well plate with cells and plasmid is set on the GND electrode. The distance from liquid surface of the well to the tip of the capillary electrode was 1 mm.A custom-made HV power supply (Pearl Kogyo) is used for discharge initiation. The output voltage waveform is 20 kHz sinusoidal that was pulse modulated at 25 Hz with a duty ratio of 1%. The voltage and current waveforms are shown in Fig. 2. As shown in this figure, a set of discharge consists of 3 groups of pulse, and the length of each group of pulse is 0.4 ms. The applied voltage between electrodes is 14 kV. Fig. 1. device. Schematic diagram of the plasma irradiation Applied Voltage /kV 15 10 5 0 -5 -10 Discharge Current /mA -15 60 40 20 0 -20 Frequency of AC voltage: 20 kHz Pulse Frequency: 25 Hz Applying Time of pulse: 0.4 ms(Duty 1%) -40 -60 -0.02 0.00 0.02 0.04 0.06 0.08 0.10 0.12 Time /s a) Total period (3 groups of pulses) Applied Voltage /kV 15 Frequency of AC voltage: 20 kHz Pulse Frequency: 25 Hz Applying Time of pulse: 0.4 ms(Duty 1%) 10 5 0 -5 -10 Discharge Current /mA -15 60 40 20 0 -20 -40 -60 -0.5 0.0 b) One group pulse 0.5 1.0 1.5 2.0 2.5 Time /ms Fig. 2. Voltage and current waveforms. 2 3.0 2.2. Plasma Treatment Procedure In order to investigate the timing of transfection and effective factors, the samples are treated in seven different protocols as shown in Fig. 3. The Protocol 0 is just a “Control”, that is, without plasma irradiation. The Protocol 1 is the standard treatment. In the Protocol 2, there is no effective factor after plasma treatment (without After Effect) by washing out with PBS. The Protocol 3 is the treatment in which the plasmid is added after plasma irradiation and washing out in Protocol 2. In the Protocols 4 and 5, the plasmid does not exist during plasma irradiation (After Effect Only). The plasmid is added just after the plasma irradiation (Protocol 5) or is added after the plasma irradiation and the washing out (Protocol 4). In the Protocol 6, there is no plasma irradiation on the cells, just like the Control protocol. Instead, the GFP treated by plasma irradiation is poured. The detailed processes in each protocol are as follows. The COS7 cells are incubated at 37°C under 5% carbon dioxide in D-MEM medium in Process (a). Before plasma treatment, the medium is removed in Process (b). Then the sample is washed by PBS (phosphate buffered saline, 0.1 M, pH 7.4) in Process (b). After the Process (b), in the Protocols 0, 1, 2 and 3, GFP plasmid diluted with TE buffer (0.4 µg/µl) is poured into each well in Process (d1). Then in the Protocols 1, 2, 3 and 4, each well is treated by the plasma irradiation in Process (e). After the Process (e), in the Protocol 1 the medium is poured into each well in Process (h). In the Protocols 2 and 3, after the Process (e), GFP plasmid and TE buffer are removed from each well in Process (f), and each well is washed by PBS and the PBS is removed, finally the medium is poured into each well in Process (h). After the Process (c) in the Protocols 4, 5 and 6, 4 µl of TE buffer without plasmid is poured into each well in Process (d2). In the Protocols 4 and 5, plasma treatment is done in Process (e). Following the plasma treatment in the Protocols 4 and 5, the medium is poured with the plasmid into each well in Process (f). In the Protocol 6, after the Process (d2), GFP plasmid treated by the plasma irradiation is poured into the well in Process (g2). The medium is poured into each well in Process (h). In each Protocol, after the Process (f) or (i), the samples are incubated for 24 hours, then they are observed by fluorescence microscope. The effect of plasma treatment is investigated in comparison between Protocols 0 and 1. By washing out with PBS immediately after plasma treatment, the direct effect of a plasma is investigated in comparison between Protocols 1 and 2. The interaction between plasma-treated COS7 and untreated GFP plasmid is investigated in comparison between Protocols 2 and 3. The effect of treated GFP plasmid dropped at the process (d1) is investigated in comparison between Protocols 3 and 4. By washing out with PBS after plasma treatment (e), the indirect effect of the plasma irradiation to untreated GFP plasmid is investigated in comparison between Protocols 4 and 5. The only effect of plasma-treated GFP plasmid is investigated in comparison between Protocols 6 and 1. P-III-10-10 Fig. 3. Detailed procedure of seven Protocols. Fig. 4. Bright field and fluorescent microscope images of the plasma treated COS7 cells with GFP plasmid. 3. Results and Discussion As shown in Fig. 5, the standard plasma irradiation protocol (Protocol 1) shows 12.2% transfection rate, whereas only 0.1% transfection without plasma irradiation (Protocol 0). It is confirmed that the plasma treatment is effective to gene transfection into cell. By washing the plasma irradiated sample out (Protocol 2), the transfection rated drastically dropped to 1.3%. This is only 1/10 of that of Protocol 1. From this result, the direct effect of the plasma irradiation (e.g., electric field, discharge current, etc.) for the gene transfection is estimated to be 1/10 of all the effects induced by plasma irradiation. On the other hand, the indirect effects (after effect) of the plasma irradiation (chemically reactive species, electric charge and bio-chemical reactions) occupies 9/10 of all the effects induced by plasma irradiation. By adding GPF plasmids again after washing out (Protocol 3), the transfection rate increases double (2.3%) compared to that of Protocol 2. One possible reason for this enhancement is that the stress by electric P-III-10-10 charge or chemically reactive species on the cells has an “after effect”, which induces transfection of the GFP plasmids that are dropped after washing out. However, if GFP plasmids are not dropped before plasma irradiation (Protocol 4), the transfection rate increases double again (4.5%) compared to that of Protocol 3. A possible reason of this enhancement is that existence of GFP plasmids decreases the stress to the cells during plasma irradiation. Another possible reason is that residual chemical species exist even after washing out process and their amount is not stable. If the washing out process is omitted (Protocol 5), the transfection rate dropped to 0.6%. Besides the instability of washing out process mentioned above, there is a possibility that washing out process itself by PBS solution has some effect such as endocytosis enhancement. Finally, to pour plasmairradiated GFP plasmids solution to the cell (Protocol 6) does not result in the transfection (0.5%). From the comparison between Protocols 1, 2, 5 and 6, the “after effect” is effective only when both GFP plasmids and 3 cells are irradiated by plasma. Therefore, the “after effect” is caused not only by the residual chemically reactive species, but also by plasma irradiation stress to cells and plasmids (possibly charging effect or oxidation stress). [6] [7] [8] [9] [10] Fig. 5. Transfection Rate Rt2 for each Protocol. [11] 4. Conclusion The authors investigated the factors for plasma gene transfection by changing Protocols and looked at the periods the factors become effective. The conclusion is that nearly 1/10 of transfections occur during plasma irradiation and that the last 9/10 of transfections occur after plasma irradiation is stopped. This second stage transfection is caused not only by the residual chemically reactive species, but also by plasma irradiation stress to cells and plasmids, i.e., possibly charging effect or oxidation stress. As a next step, quantitative investigation of charging effect and assignment of residual chemically reactive species is going on. [12] [13] T. Okihiro, K. Ikeda, J. Matsuda, H. Motomura, M. Jinno, K. Tachibana, S. Satoh and N. Saeki. in: Ext. Abst. 72nd Autumn Meeting of JSPS. 31P-ZD6 (in Japanese) (2011) T. Okihiro, J. Matsuda, K. Ikeda, H. Motomura, M. Jinno, K. Tachibana, S. Satoh and N. Saeki. in: Ext. Abst. 59th Spring Meeting of JSPS. 16P-B8-19 (in Japanese) (2012) H. Motomura, J. Matsuda, K. Ikeda, T. Okihiro, M. Jinno, K. Tachibana, S. Satoh and N. Saeki. in: Proc. 4th Int. Conf. Plasma Medicine. (Orléans, France) 76 (2012) T. Okihiro, J. Matsuda, K. Ikeda, H. Motomura, M. Jinno, K. Tachibana, S. Satoh and N. Saeki. in: Proc. 4th Int. Conf. Plasma Medicine. (Orléans, France) 74 (2012) M. Jinno, T. Okihiro, H. Murakami, T. Yamasaki, S. Shibakawa, H. Motomura, K. Tachibana, S. Satoh and N. Saeki. in: Ext. Abst. 73rd Autumn Meeting of JSPS. 12P-E1-10 (in Japanese) (2012) M. Jinno, H. Motomura, S. Satoh, Y. Kido and K. Tachibana. in: Abst. Int. Workshop on Control of Fluctuation of Plasma Processing. (Fukuoka, Japan) 3B-WS-11 (2014) M. Jinno, H. Motomura, Y. Ikeda, S. Satoh, Y. Kido and K. Tachibana. J. Eur. Phys. Lett. (submitted) (2015) M. Jinno, Y. Ikeda, H. Motomura, Y. Kido, K. Tachibana and S. Satoh. J. Photopolymer Sci. Technol., 27, 399 (2014) 5. Acknowledgements This work was partly supported by the Grant-in-Aid (25108509) from JSPS and a grant from Ehime University. The plasmids are provided by the INCS Shigenobu of Ehime University. 6. References [1] F.L. Graham and A.J. Van Der Eb. Virology, 52, 456 (1973) [2] M. Wigler, A. Pellicer, S. Silverstein and R. Axel. Cell, 14, 725 (1978) [3] P.L. Felgner, T.R. Gadek, M. Holm, R. Roman, H.W. Chan, M. Wenz, J.P. Northrop, G.M. Ringold and M. Danielsen. Proc. Nat. Acad. Sci. USA, 84, 7413 (1987) [4] S. Miyoshi, A. Ohkubo, N. Morikawa, Y. Ogawa, S. Nishimura, M. Fukagawa, H. Arakawa, J. Zenkou and S. Sato. Patent WO/2002/064767 (2002) [5] Y. Ogawa, N. Morikawa, A. Ohkubo-Suzuki, S. Miyoshi, H. Awakawa, Y. Kita and S. Nishimura. Biotechnol. Bioeng., 92, 865 (2005) 4 P-III-10-10
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