Plasma modeling using accurate cross sections for Ar R. Srivastava * , R. K. Gangwar* , L. Sharma * and A. D. Stauffer# *Dept. of Physics, Indian Institute of Technology, Roorkee 247667 India # Dept. of Physics and Astronomy, York University, Toronto, Canada M3J 1P3 Abstract: In the present work we have used reliable electron excitation cross sections in a Collisional-Radiative Model to obtain the population densities for 1s levels of argon for low temperature CCP and ICP discharges. The model includes excitation cross sections from ground as well as excited 3p 5 4s fine structure levels to the various higher lying manifolds. We have recently published the cross section results used in the present paper which were calculated using our fully relativistic distorted wave approximation method. We have also calculated cross sections for the excitation of the 3p 54s resonance levels to higher lying 3p 5 4p manifolds for use in the present work. We have compared our results for 1s level population densit ies to the recent OES measurements and the available other CR model calculations. Keywords: CR Model, Relativistic effects, Distorted wave, Plasma modeling, fine structure levels 1. Introduction Optical emission spectroscopy (OES) is one of the most widely used diagnostic methods for low temperature plasmas [1]. Advanced plasma diagnostics can be performed by the combined use of an appropriate collisional radiative model (CRM) and OES measurements which can yield various plasma parameters like electron temperature, electron density and populations of excited species [1]. In low temperature and pressure plasmas the dominant processes are caused by electron impact. Thus the success of optical-based plasma diagnostic techniques depends on using accurate theoretical and experimental electron impact cross section data [2]. There are several recently published CR models for low temperature Ar discharges [3, 4]. These models have used cross section data either from the few available experimental measurements or theoretical data calculated by empirical formula or simple non-relativistic methods which average over fine structure states. The experimental measurements are very limited and unresolved for transitions which are closely spaced in energy. Thus for reliable plasma modeling there is a real need for accurate theoretical cross section data for various transitions from the ground as well as excited states. Recently our group has reported various finestructure resolved excitation cross sections for inert gases from the ground as well as metastable states to the higher lying fine structure levels using fully relativistic distorted-wave (RDW) theory [5, 6, 7]. The RDW method used for the calculations of the cross sections utilizes the solution of the Dirac equations for the wave functions of both the initial and final channels for the projectile electron [5]. The bound target states are represented as relativistic Dirac-Fock multi-configuration wave functions. We have obtained these wave functions for the ground and the excited states from the relativistic atomic structure GRASP92 code [8]. Recently Zhu et al [3] have reported experimental results from optical emission spectroscopy (OES) for various Ar plasma discharges along with their theoretical calculation using a CR model. In the present work we calculate the population distribution of the 1s levels (in Paschen notation) for low temperature argon capacitively coupled plasmas (CCP) and inductively coupled plasmas (ICP) using a CR model which includes our RDW cross section results for the various transitions. We compare our results with the OES and CRM results of [3]. CR model Our collisional radiative model is similar to recently reported models [3, 4] and incorporates 40 excited fine-structure levels, one ground level and one ion level as listed in table 1. Since we have considered here only low temperature plasmas the dominant processes are due to electron impact. The rate coefficients kij for the electron impact excitation from a lower energy level i to a higher level j can be expressed as 2 k ( E ) E F ( E )dE ij m Eij ij (1) where m is the electron mass and σij is the electronimpact integrated cross section (ICS) at an electron impact energy E. F(E) is the electron energy probability function which is related to the electron energy distribution function (EEDF) f(E) through the relation f(E) = E1/2 F(E) with the property that E F ( E )dE 1 . 0 For the inverse process, i.e. the electron impact deexcitation from level j to level i, the rate coefficients kji follow from the detailed balance principle [9] and are given by k g 2 i ( E ) E F ( E E )dE ji g m Eij ij ij j (2) where g i and gj are the degeneracy of levels i and j, respectively. The rate coefficients for the electron impact ionization process from level i is given as 2 k ( E ) E F ( E )dE i m Ei i level j to i, ( j > i ), A ji eff, are calculated from the relation Aji eff = ji Aji.. Where Aji is the Einstein coefficients and ji is the escape factor. By introducing this escape factor and using an effective radiative decay coefficients in place of the Aji , we can partially account for the self absorption of the emitted radiation. In the present model, assuming a uniform distribution of emitting and absorbing atoms, we used the Mewe approximation to calculate escape factors [10]. In the present model the calculation of escape factor has only been done for transitions involving the five lowest levels. For low temperature and pressure, the population density of the more highly excited levels are usually low enough so that we can neglect the radiation trapping effect. Now the particle balance equation which accounts population and depopulation terms for an excited levels j, having population density n j in steady state is given by, 41 eff kij (Te )ni ne Aij ni ne n ne k j i1 i j i j 41 (3) where σi+ is the electron impact ionization cross section and Ei+ is the ionization energy of the ith level. The reverse of the ionization process, a collision between an ionized atom and two electrons, can cause recombination of the ion and an electron. This process is called three-body recombination and its rate coefficients can also be calculated by using the detailed-balance principle and the direct ionization cross sections [9]. For all the electron impact processes, the electron energy distribution function (EEDF) is assumed to be Maxwellian as used in other CR models [3, 4] so that we can make a direct comparison with their results. Emission and absorption of radiation can also contribute to the production and destruction of level populations. There are three processes involved, viz spontaneous emission, absorption and stimulated emission. In this model the last two processes are neglected and the radiative decay coefficients from k ji (Te )n j ne - Aeff n j - n j ne k j 0 (4) ji i1 i j i1, 2, 4 i j Where n e and Te is electron density and electron temperature of the plasma. In putting the electron density, atom density and electron temperature at which the experimental measurements have been made [3], we solved these linear equations and calculated the 1s level populations following the method described in Mullen et al [9]. We used our recent RDW calculations [5, 6, 7] for the various excitation cross sections from both the ground state as well as the metastable states with configuration 3p 5 4s to the higher lying fine-structure levels as input to equation 1. The electron-impact excitation cross section from the resonance 3p 5 4s levels (1s4 and 1s2 ) to the other excited levels (especially the 2p levels) are also as important as the excitation from the metastables states. Our earlier RDW calculation did not consider these excitations so we have also calculated these in the present work. TABLE 1. Argon energy levels considered in model. The levels are given in paschen notation. Number of level 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Level 1S0 1s5 1s4 1s3 1s2 2p10 2p9 2p8 2p7 2p6 2p5 2p4 2p3 2p2 2p1 3d12 3d11 3d10 3d9 3d8 3d7 3d6 3d5 3d4 3d3 3d2 3d1 2s5 2s4 2s3 2s2 3p10 3p9 3p8 3p7 3p6 3p5 3p4 3p3 3p2 3p1 Ion Excitation Energy (eV) 0 11.548 11.623 11.723 11.828 12.907 13.076 13.095 13.153 13.172 13.273 13.283 13.302 13.328 13.480 13.845 13.863 13.903 13.979 14.012 14.063 14.100 14.153 14.214 14.234 14.236 14.303 14.068 14.090 14.241 14.255 14.464 14.500 14.506 14.525 14.529 14.575 14.680 14.687 14.688 14.738 15.76 Statistical weight 1 5 3 1 3 3 7 5 3 5 1 3 5 3 1 1 3 5 9 7 5 7 3 5 5 7 3 5 3 1 3 3 7 5 3 5 1 3 3 5 1 6 In equation 3 we have included available experimental ionization cross sections from the ground state [11] and theoretical data for ionization of the 3p 5 4s metastable states [12]. The Einstien radiative transition probabilities have been taken from the NIST database [13] and from Wiese et al [14]. 3. Results & Discussion Fig 1 and 2 display the cross section results for the excitation from the resonance 3p5 4s levels to levels of the 3p5 4p manifold. Since these results have not been previously published we show these in detail for use in future plasma modeling calculations Figure 1. The ICS results calculated using RDW theory for the excitation of the 3p 54s resonance level 1s 2 (J=1) to the 3p 54p manifold. Figure 2. The ICS results calculated using RDW theory for the excitation of the 3p 54s resonance level 1s 4 (J=1) to the 3p 54p manifold. In figures 3 and 4 we have shown the comparison of our results with the recent OES measurement and CR model results reported by Zhu et al [3]. Our calculations are overall in better agreement with the experimental OES measurements, especially those for the CCP plasma, than the calculations reported in [3]. We are very thankful to Prof. J A M van der Mullen, Dr. Wouter Graef, Dr. X M Zhu and Prof. Y K Pu for their useful suggestions and discussions. R.K.G. is thankful to CSIR, New Delhi for financial assistance. R.S. would like to acknowledge research grants in support of this work from Council of Scientific and Industrial Research (CSIR), New Delhi and IAEA Vienna. ADS acknowledges a grant from NSERC Canada. References Figure 3. Ratios of population densities of 3p 54s levels to the respective degeneracy for a CCP argon plasma. Figure 4. Ratios of population densities of 3p 54s levels to the respective degeneracy for a ICP argon plasma. 4. Conclusion Results of a CRM using reliable cross section data for argon are presented for low temperature CCP and ICP plasmas. Our modeling results for the population distribution of the 1s levels are in good agreement with the OES measurements of Zhu et al [3]. From the present work we have demonstrated the necessity of using reliable cross sections for the fine-structure transitions in order to obtain accurate plasma population levels. 5. Acknowledgements [1] Xi-M ing Zhu and Y K Pu, J. Phys. D: Appl. Phys. 43 403001(2010). [2] J B Bo ffard, C C Lin and C A DeJoseph, J. Phys. D: Appl. Phys. 37 R143 (2004). [3] Xi-M ing Zhu and Y K Pu, J. Phys. D: Appl. Phys. 43 015204 (2010). [4] A Palmero, E D Hattu m, H Rudolph and F H P M Habraken, J. Phys. D: Appl. Phys. 101 053306 (2007). [5]R K Gangwar, L Sharma, R Srivastava, A D Stauffer Phys. Rev. A 81 052707 ( 2010). [6] M A Khakoo et al, J. Phys. B: At. Mol. Opt. Phys., 37, 247 (2004). [7] R Srivastava, A D Stauffer and L Sharma, Phys. Rev. A, 74, 012715 (2006). [8] F A Parpia, C F Fischer and I P Grant, Comput. Phys. Commun., 94, 249 (1996). [9] A Hartgers, J van Dijk, J Jonkers, J A M van der Mullen, Comput. Phys. Commun. 135 199 (2001). 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