O/O3 source for Oxide growth at low pressure Miaomiao Zhang, Xiaoxi Duan and Jiting Ouyang* School of Science, Beijing Institute of Technology, Beijing 100081, China Abstract: The active O atoms and O3 molecules are very helpful to improve the growth rate of oxide film in deposition system which operates at typical pressures of 0.01 to 1 Torr. We designed a plasma reactor based on dielectric barrier discharge. The configuration consists of a cylindrical tube and a pair of electrodes. The driving power is a sinusoidal voltage at audio-frequency and the system can operate in coplanar discharge mode. Experiments were performed in pure oxygen at low pressures. The dielectric barrier discharge shows a typical glow discharge with a single pulse on the current waveform. The chemistry species reach their equilibrium concentration at given discharge conditions. Keywords: dielectric barrier discharge, glow discharge, O/O3 source, low pressure * Corresponding author; Email: [email protected] 1. Introduction ZnO has become one of the most important oxides attract researchers’ eyes in recent years. A popular measure to prepare the different kinds of oxide structures is by using a plasma-assisted deposition system with oxygen as one of the feeding sources, to deposit or sputter the ZnO films or layers [1-4] on various substrates. The growth rate of the film is a key parameter for any deposition or sputtering system. The oxygen radicals such as O atoms (O3P, O1D) and O3 molecules will be helpful to improve the growth rate due to the high activity comparing with the original O2 molecules. For this purpose, one can supply O/O3-riched gas environment for the growth of oxides in the plasma-assisted system. An available way is to dissociate the O2 molecules by discharge before it being injected into the deposition system. To control the species concentration, it is better to run the discharge system after the oxygen injected inside the deposition system. In most cases, the deposition system operates at low pressures. This requires the discharge system can work at low pressure in the gas-inlet. The dielectric barrier discharge (DBD) is very suitable for O/O3 generation at any pressures, which has been used in many industrial applications [5]. In this paper, we designed a DBD reactor to produce O/O3 at low pressure. 2. Experimental set-up The experimental set-up is shown in Fig.1. Spectroscope Glass tube 1.5 cm electrode 2 cm 10 cm Power R oscilloscope Figure 1. Experimental arrangement. The DBD reactor consists of a 20 cm-long glass tube with 2 cm in inner diameter. The thickness of the tube is 1 mm. The filling gas is pure O2 at 0.1, 0.5 and 1 Torr. The ring-shaped electrodes are outside the tube with length of 1.5 cm and a long distance of 10 cm. A sinusoidal voltage is applied between the two electrodes. The applied voltage is measured by a high-voltage probe (Tektronik P6015A, 1000× 3pF, 100 MΩ) and monitored with a Tektronik oscilloscope (TDS 3054B). The discharge current is sampled by the voltage VR dropped on a non- inductive resistance R, or I = VR/R. An optical emission spectroscopy (OES, Zolix Omni λ-5008) is used to record the light emission and the spectral lines from the discharge plasma. A digital camera (Canon A950) is used to record the plasma image of the discharge. 3. Results and Discussions The DBD under this condition is glow discharge, with one current pulse in each half period. The typical current-voltage waveforms are shown in figure 2 at pressure of p = 0.5 Torr and peak-to-peak voltage of VS = 1600 V and frequency of f = 35 kHz. The discharge current has a long rising time of 2 μs and duration of 10 μs. U I VS (V) 1000 6 4 500 2 0 0 -2 -500 I (mA) -4 -1000 -6 0 10 20 30 40 50 t (μs) Figure 2. Typical current and voltage waveform at 1600 V/ 35 kHz, the gas pressure is 0.5 Torr. the voltage increasing, as shown in figure 3. The stratified structure of the discharge channel is very clear at lower voltage, but will tend to become homogenous without obvious striations at very high voltages. The discharge current and the plasma image at other pressures (i.e., at p = 0.1 and 1 Torr) are similar to the above one. In the present coplanar configuration, the gas pressure can be as low as less than 0.01 Torr to sustain a stable DBD in our experiments. This can satisfy the pressure condition for the some plasmaassisted oxide deposition system which operates at very low pressures. We also tested the facing electrode configuration in experiments. In this case, the two electrodes are in arc-shape. The gap is near the diameter of the glass tube. The discharge in this condition is just similar to the traditional planar DBD. But the gas pressure should not too low to operate. When we reduced the pressure below 0.05 Torr, it is difficult to turn on the discharge. The discharge power deposited into the coplanar DBD reactor increases almost linearly as the voltage increasing, as shown in figure 4. The power is calculated by integrating the production of the current and the voltage in each half period. 1.6 The time-integrated light emission from sideview is shown in figure 3. 1.4 P (W) 1.2 0.1Torr 0.5Torr 1Torr 1.0 0.8 0.6 0.4 0.2 1400 1600 1800 2000 2200 2400 2600 2800 Figure 3. DBD plasma images at voltage of 1600 V (upper) and 2600 V (bottom), the exposure time is 1 s. It is seen that the images of the DBD light emission show typical glow discharge, with bright negative glow regions near the electrodes and the weak positive column in the center. It is noticed that the stationary striations appear in the long positive column. The striation spacing becomes shorter when VS (V) Figure 4. Discharge power changing with applied voltage at different pressures. From figure 4, the power consumption is generally low in this DBD system, with value being less than 1.5 W. The discharge power depends on the gas pressure in this long-gap coplanar DBD. At the same voltage supply, a larger energy deposition will be obtained power value at higher pressures. This is different from the conversional DBD whose energy deposition is generally determined by the electrode area and the applied voltage. We measured the emission intensity of O*(777.4 nm) and O*(844.6 nm) at various applied voltage in the negative glow and the positive column, as shown in figure 6. The emission spectrums of the O2 plasma from negative glow and positive column measured by OES are shown in figure 5. Intensity (a.u.) 700 1200 (a) Intensity (a.u.) 1000 800 0.1Torr 0.5Torr 500 400 300 1Torr 200 0 O 0.1Torr 0.5Torr 1Torr 1400 1600 1800 2000 2200 2400 2600 2800 400 0 VS (V) O 300 400 500 600 700 Wavelength (nm) 250 7 800 -Solid 777.4nm -Opened 844.6nm (b) 0.5Torr 6 300 Intensity (a.u.) (a) 600 600 200 -Solid 777.4nm -Opened 844.6nm 100 Intensity (a.u.) 800 (b) 200 5 1Torr 4 0.1Torr 3 2 0.1Torr 0.5Torr 1Torr 150 1 100 0 1400 1600 1800 2000 2200 2400 2600 2800 VS (V) O 50 O 0 300 400 500 600 700 Figure 6. O atoms emission intensity in (a) the negative glow and (b) the positive column at different voltages. 800 Wavelength (nm) Figure 5. Emission spectrum from (a) the negative glow and (b) (b) the positive column under conditions of figure 2. The characteristic spectral lines include the typical oxygen radiation of O*(777.4 nm, 3p5P Æ 3s5S transition) and O*(844.6 mn, 3p3P Æ 3s3S transition). This confirms that the O atoms are produced in the O2 plasma. The emission spectral lines from the negative glow are not the same as the positive column. For the O atoms radiations (O*(777.4 nm) and O*(844.6 nm)), the emission intensity is generally much stronger in the negative glow than in the positive column. Both the O*(777.4 nm) and O*(844.6 nm) increase their intensity with the applied voltage in the negative glow (see figure 6(a)). This is reasonable that at higher voltage, the discharge becomes stronger, and more O atoms will be dissociated in the channel. However, the intensity keeps almost constant as the applied voltage increasing at a given pressure (see figure 6(b)). Since the oxygen plasma will be injected slowly into the deposition region which is the downstream of the discharge area and has only a weak field there, the chemistry process of the species is expected to be similar to that in the positive column. Then, the density of the active species in the positive column might be approximately equal to that of the equilibrium density in the downstream area. Although the radical concentration is hard to be determined in experiments, this result suggests that a lower voltage might help to achieve higher energy efficiency. 4. Conclusions We have designed a long-gap coplanar DBD reactor to produce oxygen radicals (O and O3 etc) for the plasma-assisted oxide deposition system. The system can operate in the large range of low pressures in pure oxygen to satisfy the pressure condition of the deposition system. The coplanar DBD is a typical glow discharge. The deposited power into the DBD reactor is linear to the applied voltage, and also relates to the gas pressures. It is suggested that this coplanar DBD might achieve a higher energy efficiency of O/O3 generation at a lower voltage. Acknowledgement This work was supported in part by the National Science Foundation of China under Grant No. 10875010. References [1] M. Liu, C. Y. Ma, Q. Y. Zhang, Physica Status Solid A 205, 961 (2008). [2] H. Ono, S. Iizuka, Thin Solid Films 518, 1016 (2009). [3] J. Jin, A. Morita, H. Shirai, J. Appl. Phys. 108, 033521 (2010). [4] B. Zhang, B. Yao, S. Wang, Y. Li, C. Shan, J. Zhang, B. Li, Z. Zhang, and D. Shen, J. Alloys Compounds 503, 155 (2010). [5] U. Kogelschatz, Plasma Chem. Plasma Proc. 23, 1 (2003).
© Copyright 2026 Paperzz