Key Words Index
NOTE - This index is intended to be used in concert with the Table of Contents, which provides general guidance
as to where various topics are presented. Entries in this index identify only locations where there is significant
discussion of the indexed term. Because the vast majority of the papers in the volume relate to silicon or
metrology, these terms are not listed in the index except under special circumstances. Page numbers following the
term are the numbers of the first page of the article in which the term appears.
300 mm metrology 485, 656, 490
3D full-wave electromagnetic simulation
254
A
aberration correction 627
aberrations 619
accuracy 348
acid copper chloride 514
acid diffusion 429
ACT 469
adhesion 455
advanced materials 611
advanced process control 583
AES 176
Al 40, 353
Al2O3 723, 148
ALD 455
alloy junction 40
alloy transistor 3
ammonia/amines 245
angle resolved XPS 154
annealing 176
AOTF 357
APC 592
atomic force microscopy (AFM)
176, 400, 562, 421, 519
Au 40
automated metrology 592
B
back-end metrology 651
backward wave oscillator 190
barrier 660
bevel 309
bevel depth profile 710
beyond CMOS scaling 74
bipolar transistor 672
bleed and feed 504
blocking plate 357
breakdown products 504
buried defects 343
C
678, 685, 223,
calibration 421, 313
capacitance 771, 160
carbon nanotubes 462
carrier illumination 758
carrier profiling 678, 685, 758
CD reference materials 421
CD-SEM 619
chamber cleaning 190, 611
characterization 353, 223
charging 619, 782, 396
chemical analysis 764
chemical constituent analyzer 504
chemical shift 139
chemically amplified resists 429, 448
cleaning 271, 186
CMOS 74, 223
CMOS scaling 74
collision-induced dissociation 205
combinatorial methods 448
composition profile 129
contamination control 309
contamination measurement 289
contrast mechanism 480
corona 782, 160
critical dimension (CD) 81, 381, 97, 396,
434
crystal originated pit (COP) 271
crystal phases 519
Cu 353, 494, 499
Cu contamination 309
Cu interconnects 533, 480, 519
Cu microstructure 485
Cu plating 504
Cu process control 592
C-V (see also “dynamic CV technique”)
CVD 611
796, 160
D
damascene 494, 499
defect 371, 771, 254
defect identification 284
defect localization 462
degradation 551
delamination 343
density 129
depth profile 710, 154, 802, 166
diagnostic 190, 744
dielectric 551
dielectric confinement effects 533
dielectric film 166, 556
dielectric functions 181
dielectric properties 166
differential mobility analyzer (DMA) 313
diffraction limited imaging 254
diffused junction 40
diffused transistor 40, 3
diffusion length 782
digital holography 254
dispersive profilometer 357
doping measurement 802
dose 154
ductility 353
DUV 254
DUV photolithography 294
dynamic CV technique (see also “C-V”) 802
dynamic SIMS depth profiling (see also “secondary
ion mass spectrometry, SIMS”) 695, 705
E
EBSD 469, 494, 499
edge exclusion 309
effective attenuation length 321
effective oxide thickness (EOT) 782, 796, 160
electrical measurements 771, 195
electrochemical deposition (ECD) 504
electromigration 533, 480
electron energy loss spectroscopy 627
electron probe microanalysis 238
electrospray 300
electrospray ion-trap time of flight mass spectrometry
504
electrostatic force microscopy 462
ellipsometry 753, 326, 186, 337, 562
EM-gate 796
EPD 223
EPL 389
EPMA 238
etch processes 611
etch residual 294
etch stop 190
etching 195, 166
extinction coefficient 171
extreme ultraviolet (EUV) 371, 444
extreme ultraviolet lithography (EUVL)
389, 444
F
failure detection 462
fiber optic 764
film thickness 81, 321, 326
FinFET 74, 107
flatband shift 667
flatness 371, 413
fluorescence 660
Fourier transform 764, 205
front-end metrology 284
FTIR 611
G
Ga diffusion 40
gaseous cluster ion beam 710
gas-phase analysis 611
gate dielectric 627, 771, 348, 160, 143, 331
gate oxide 627
grazing incidence X-ray reflectivity 337
grown-junction transistor 3
H
HAADF-STEM 556
hafnium aluminates 181
hafnium silicate 321
haze 271
heterogeneity 238
HF 606
HfAlOx 148
HfO2 148, 321, 176
high angle annular dark field 627
high aspect ratio 254
high resolution X-ray diffraction (see also “X-ray
diffraction, XRD”) 634
high resolution X-ray scattering (see also “X-ray
scattering”) 634
high-κ dielectrics 74, 124, 129, 723, 139, 143,
148, 154, 321, 160, 166, 181, 186
high-density 195
high-pressure sampling 205
homogeneity
HSSQ 540
linewidth 421
liquid chromatography 514
liquid-phase epitaxy (LPE) 40
lithography 63, 365, 97, 413
low thermal expansion material (LTEM) 371
low-κ dielectrics (see also “porous low-κ”) 81, 533,
723, 540, 546, 551, 562, 567,
651, 572, 576, 519
238
I
ICP-MS 606, 715
ILD 455
image processing 556
impurity diffusion 40
inductively coupled plasma 715
infrared 764, 540
inlaid copper interconnects 469
in-line 300
in-process mass spectrometry (IPMS)
in-situ measurements 705
in-situ optical diagnostics 748
in-situ sensing 583
in-situ studies 480
inspection 389
integrated circuit 3
integrated metrology 592
interconnect 97, 562, 494, 499, 514
interface 139
interface trapped charge 667
interfacial oxide 124
interferometry 413, 764
inversion layer 40
ion energy 195
ion implantation 278, 744
ion milling 710
ion traps 205
I-V 796, 143
J
junction delineation 672
junction depth 695, 758
K
Kelvin probe
782
L
laser interferometer 705
laser power 409
laser-produced plasma 444
Leakage 796
LEED 186
LEXES 695
lifetime 782
light scatterometry 434
lightpipe radiometer 200
line edge roughness 429
line profile 381
line shape 434
M
504, 300
mask 81, 371, 389
mask cost 63
mass spectrometry 592, 583, 300, 205
materials characterization 81
mechanical behavior 525
MEIS 695
mesa process 3
metal analysis 606
metallic contamination 289
metal-oxide-semiconductor (MOS) 771
metrology model 400
Michelson interferometer 357
microelectromechanical systems (MEMS)
microelectronics 494, 499
micro-heterogeneity 238
microroughness 271
micro-scratch 271
microstructure 499
microstructure control 490
missing polysilicon line 278
MOCVD sources 583
modeling 326
molecular contamination 294
Moore’s Law 74
MOSFETs 74
multi-gate devices 107
multi-layer film stacks 233
N
nanoelectronics 462
nanoindentation 525
nano-linewidth 400
nanomechanical imaging 343
nanosize 313
nanotechnology 81
native oxide 186
Nd:YAG 271
neutron scattering 567
NEXAFS 439
Ni 176
non-classical CMOS 107
non-contact 802, 160, 744
nondestructive characterization 343
non-destructive metrology 656
462
OIM 469, 494, 499
on-line 764
on-line monitoring 606
open-circuit potential 166
optical 381, 233, 326, 181, 764
organic additives 504
organic analysis 592
organic contaminants 245, 289
organics 300
organosilicate glasses 723
orientation distribution function 469
outgassing 245
overlay 381
oxide masking 40
oxide quality 667
oxide thickness 782
pore size 567, 572, 651
pore size distribution 556
porogen 551, 572
porosimetry 572, 576
porosity 562, 651, 572
porous 546
porous low-κ (see also “low-κ dielectrics”)
power device 672
preamorphization implant 758
precision 326
process characterization 205, 611
process chemical 606
process control 490, 504
process development 672, 490
process metrology 289, 434
process monitoring 195
process qualification 289
process tool cleanliness 289
progress 685
pulsed radiometry 444
PVD deposition 519
P
Q
P diffusion 40
PAG segregation 439
particle 313
particle analysis 289
particle detection 271, 289
partnerships 63
pattern metrology 434
pattern quality 429
phase contrast 480
photo-carrier radiometry 744
photodetector 444
photoemission 139
photomask 389, 396
photoresist scum 294
photoresists 439
photo-thermal radiometry 744
photovoltage 782
physical failure analysis 343
planar process 3
plasma 190, 195
plasma flood gun 278
PMSSQ 551
p-n-p transistor 40
p-n-p-n switch 40
point-contact transistor 40
polarizability 166
pole figure 469
poly-crystalline 228
polyimide 353
polymerization 551
polysilicon 353
polystyrene latex 313
quadrupole
non-intrusive 744
n-p-n transistor 40
O
205
R
R&D cost 63
radicals 190
radio-frequency 195
Raman 223
Raman spectroscopy 748, 213
rapid thermal processing (RTP) 656, 200
Rayleigh’s equation 271
RBS 695
real-time measurement 504
recrystallization kinetics 485
reference standards 238
reflectance 233
reflectivity 371, 660
reflectometry 660
refractive index 171
residual gas analysis 583
revenue growth 63
root cause analysis 228
roughness 371
run-to-run control 583
S
SAXS 546
Sb diffusion 40
SC-1, SC-2 606, 300
scaling 107
556
scanning capacitance microscopy (SCM) 667,
672, 678
scanning electron microscope (SEM) 396, 421
scanning microscopy 619
scanning thermal microscopy 462
scanning thermoelectric microscopy 462
scanning transmission electron microscopy 627,
556
scatterometry 381
SCROD 271
secondary ion mass spectrometry (SIMS) (see also
“dynamic SIMS depth profiling”) 455,
695, 223, 551, 294, 228, 710
semiconductor material analysis 715
sensor 764
shallow implants 695
shallow trench isolation 738
sheet resistance 758
shrinks 63
Si optical constants 723
Si oxide 40
Si technology 40
Si transistor 40
Si1-xGex 233
sidewall roughness 429
SiGe 213, 238
SiGe heterojunction bipolar transistor 738
SiGe:C HBT 228
silane pyrolysis 748
silicon deposition 748
silicon dioxide 331
silicon nano-spring 525
silicon oxynitride 171
silicon-germanium technology 238
silicon-on insulator (SOI) 107, 124, 271
SiO2 optical constants 723
SiOC 540
small angle neutron scattering (SANS) 567,
572
sol-gel method 143
solid analysis 715
speciated isotope dilution mass spectrometry (SIDMS)
504
spectral carrier frequency 357
spectral imaging 753
spectrograph 753
spectrometry 660
spectroscopic ellipsometry (SE) 124, 213, 148,
223, 233, 181, 540
spectroscopy 764, 205
sputtering rate 705
SPV 782
SSRM 678, 685
statistical process control 97, 228
stiffness 343
strained Si 213, 223, 107
strained Si channel 738
strained Si CMOS 213
stress 738, 494
submillimeter-wavelength absorption spectroscopy
190
suppressor 514
surface analysis 289, 294
surface chemistry 455, 439
surface roughness 519
surface voltage 782
synchrotron radiation 139
T
Ta liner 485
tantalum liner/barrier 519
Tauc-Lorentz dispersion 171
TCA 300
TD-GC-MS 245
temperature calibration 200
temperature measurement 200
texture 469, 494
thermal chemical vapor deposition 748
thermal oxidation 667
thickness 129, 753, 154, 228, 337
thickness measurement 348, 186
thickness profile 357
thin film 97, 753, 357, 143, 331, 646,
448, 651
thin-film thermocouples 200
titanium aluminates 181
trace contamination 592, 300
trace metal analysis 309
transistor alpha 40
transmission electron microscopy (TEM)
223, 228, 176, 556
traps (defects) 40
two-dimensional dopant profiling 672
two-dimensional 678, 685
627,
U
ULSI metrology 462
ultrasonic force microscopy (UFM)
ultrathin SiO2 films 337
ultraviolet 409
uniformity 583, 154
USJ 656
UV-Raman 738
343
V
vacuum ultraviolet 148
vacuum ultraviolet spectroscopic ellipsometry
171, 181
723,
W
wafer cleanliness 289
wafer-surface inspection 271
water vapor 190
wet chemical analysis 289
wet oxidation 667
wide gap thin films 738
X
XPS 176, 551
X-ray 660
X-ray diffraction (XRD) (see also “high resolution
X-ray diffraction”) 213, 519
X-ray fluorescence (XRF) 646, 660
X-ray imaging 480
X-ray micro-diffraction 469
X-ray microscopy 480
X-ray photoelectron spectroscopy 321, 337
X-ray reflection 148
X-ray reflectivity (XRR) 634, 223, 567, 651,
572, 576, 646, 660
X-ray scattering (see also “high resolution X-ray
scattering”) 434
X-ray scattering, small angle 562
X-ray topography 284
Y
Young’s modulus
343
Z
Z-contrast 627
zirconium dioxide
zirconium silicate
321
321