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The articles on pp. 97-104,181-185,195-199,200-204, 238-242, 313-317, 326-330, 331-336, 348-352, 353-356,
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authored by U. S. Government employees and are not covered by the below mentioned copyright.
Cover: Detector image from transmission Small Angle X-ray Scattering from a dense array of via-pads etched into silicon
dioxide on a SEMI-standard silicon wafer. The via-pad structure is rectangular, resulting in diffraction peaks along two
axes. The spacing of diffraction peaks yields information on the average distance between pads, while the peak intensities
provide the average pad dimensions. The image was recorded by Ronald L. Jones, Tengjiao Hu, Wen-li Wu, and Eric K.
Lin as part of the ongoing program in electronic materials characterization in the Polymers Division of the Materials Science
and Engineering Laboratory at the National Institute of Standards and Technology. Image data were collected at the
ID-9 Beamline of the Advanced Photon Source, part of Argonne National Laboratory (Argonne, IL).
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ISBN 0-7354-0152-7
ISSN 0094-243X
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