Matakuliah Tahun Versi : H0362/Very Large Scale Integrated Circuits : 2005 : versi/01 Pertemuan 2 Karakteristik Kelistrikan Gerbang MOSFET 1 Learning Outcomes Pada Akhir pertemuan ini, diharapkan mahasiswa akan dapat menunjukkan karakteristik kelistrikan gerbang MOSFET. 2 MOS Fisik + VG Gate voltage Bentuk fisik Gate Gate oxide Silicon surface tox + VG > 0 p-type substrate Silicon surface QS surface charge p-type 3 nFET Bentuk fisik 3 dimensi Gate Gate Gate oxide Source n+ n+ n+ L Drain Source n+ Drain p-substrate Tampak samping Tampak atas 4 nFET G Arus dan tegangan VGSn + S - - IDn VDSn + D - VGSn VDSn + IDn Simbol S G n+ D n+ L p-substrate Struktur 5 nFET VGSn VTn n+ VGSn > VTn kanal n+ Source n+ n+ Source Drain Qe = 0 Qe Pengaturan kanal Drain Active CUT off VGSn < VTn - + S G n+ VDSn IDn = 0 D n+ p-substrate Cut off VGSn > VTn - + S G n+ VDSn IDn mengalir D n+ p-substrate Active 6 nFET IDn I-V characteristics + VDSn = VDD + VGSn IDn - Cutoff - Active VGSn 0 VTn I-V fungsi VGSn IDn + IDn + saturation non saturation VDSn VGSn > VTn - I-V fungsi VDSn VDSn 0 Vsat 7 nFET 6 x 10 I-V characteristics -4 VGS= 2.5 V IDn 5 Resistive 3 Saturation VGS= 2.0 V VDS = VGS - VT D I (A) 4 2 VGS= 1.5 V 1 VGS= 1.0 V 0 0 0.5 1 1.5 V DS (V) 2 VDSn 2.5 8 nFET CDB CGS RC model CGD CSB n+ n+ S Gate Physical visualization CGS G G D CD CS Linier model CGD D S CSB Rn CDB Symbol diagram 9 pFET Gate Gate p+ n+ p+ n-well n+ np pn p-substrate p-substrate pFET nFET VSDp G + IDp - VSDp + VSGp G S - D - IDp + p+ S D p+ + VDD n-well n-well p-substrate Simbol Struktur 10 pFET IDp + VSFp I-V characteristics + - VSDp = VDD Cutoff - IDn Active VSGp 0 VTn - VSGp |VTn| IDp = 0 S G p+ IDp VSDp S p+ n-well - + VSGp > |VTn| + VDD n-well S G p+ + VSDp S p+ + VDD n-well n-well p-substrate Cutoff p-substrate Active 11 DC Inverter Vout MP ON, Mn OFF VOH = VDD x Vout = Vin x x x 0 1 1 0 VM Mn ON, Mp OFF VOH = 0 0 VM VIL VDD 1 VDD VIH VDD ON + Vin = 0 - OFF + OFF Vout = VDD - Low input voltage + Vin = VDD - + ON Vout = 0 - High input voltage 12 DC Inverter VDD Switching characteristics Vin t tf VDD tr Vout t VDD t2 t1 Rp VDD CDp Mp + + Vin - + Mn Inverter circuit Vout - CDn Vin - Rn RC switch model + Vout 13 Power Dissipasi VDD IDD Rangkaian CMOS P = VDD IDD P = PDC + Pdyn PDC: daya arus searah Pdyn: daya akibat aktifitas switching 14 RESUME • Bentuk fisik dan karakteristik nFET dan pFET. • Karakteristik DC inverter. • Karakteristik switch inverter. • Power dissipasi 15
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