Tapered Amplifier
GaAs Semiconductor Laser Diode
Absolute Maximum Ratings
Operational Temperature at case
Forward Current
Reverse Voltage
Symbol
TC
IF
VR
Unit
°C
A
V
min
typ
max
50
3
0
Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the
device. Operation at the Absolute Maximum Rating for extended periods of time can adversely
affect the device reliability and may lead to reduced operational life.
Recommended Operation Conditions
Unit
°C
A
min
0
typ
max
40
2,5
Symbol
λC
Unit
nm
min
770
typ
780
max Measurement Condition
785
∆λ
TCλ
nm
nm / K
10
Temp. Coeff. of Wavelength
20
0,25
Output Power
Popt
mW
1000
PSat
IOp
dB
mW
A
13
50
2,5
lC
µm
2750
µm
µm
3
190
Operational Temperature at case
Forward Current
Symbol
Tcase
IF
Characteristics at Tamb 25°C
Parameter
Center Wavelength
Gain Width (FWHM)
Amplification
Saturation Power
Operational Current
Cavity Length
Input aperture (at rear side)
Output Aperture (at front side)
Divergence parallel (FWHM)
Divergence perpendicular (1/e²)
Θ
Θ⊥
Astigmatism
Polarization
depending on customer setup
°
°
7
10
28
13
µm
325
375
TM
425 depending on customer setup
Package Information
c-Mount 2.75 mm
Part No.
CMT03
others
EYP-TPA-0780-01000-3006-CMT03-0000
available (see image)
on request
26.02.2005
Package Dimensions
CMT03
mm
mm
Emission plane
C-Mount Thickness
7.2 -0.15
2.75
Package Pinout
CMT0n
Cathode (-)
Anode (+)
EYP-TPA-0780-01000-3006-CMT03-0000
Mounting wire
Housing
26.02.2005