APTGF50H60T3G
Full - Bridge
NPT IGBT Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13 14
19
Q2
22
7
23
8
CR2
26
Q3
11
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
10
Q4
CR4
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
• RoHS compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
65
50
230
±20
250
Tj = 125°C
100A @ 500V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
July, 2006
CR3
CR1
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGF50H60T3G – Rev 2
Q1
18
VCES = 600V
IC = 50A @ Tc = 80°C
APTGF50H60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off)
Tf
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
Min
Tj = 25°C
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 50A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
VGE = 0V
VCE = 600V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
1.7
VGE = 15V
VBus = 300V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
R G = 2.7Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
R G = 2.7Ω
VGE = 15V
Tj = 125°C
VBus = 400V
IC = 50A
Tj = 125°C
R G = 2.7Ω
Test Conditions
2.0
2.2
4
Min
Typ
2200
323
200
166
20
100
40
9
Max
250
500
2.45
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 400V
di/dt =200A/µs
Unit
pF
nC
ns
ns
130
21
0.5
mJ
1
Typ
Max
Unit
V
250
500
Tj = 125°C
30
1.6
1.9
1.4
Tj = 25°C
85
Tj = 125°C
Tj = 25°C
160
130
Tj = 125°C
700
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V
Max
12
42
10
Tj = 25°C
Tj = 125°C
Tc = 70°C
µA
V
nA
600
VR=600V
Unit
6
400
120
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
µA
A
1.8
V
July, 2006
ICES
Test Conditions
ns
nC
2-6
APTGF50H60T3G – Rev 2
Symbol Characteristic
APTGF50H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.5
1.2
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTGF50H60T3G – Rev 2
28
17
1
July, 2006
SP3 Package outline (dimensions in mm)
APTGF50H60T3G
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
150
TJ=-55°C
250µs Pulse Test
< 0.5% Duty cycle
Ic, Collector Current (A)
TJ=25°C
100
TJ=125°C
50
0
250µs Pulse Test
< 0.5% Duty cycle
100
TJ=25°C
50
TJ=125°C
0
0
1
2
3
4
0
1
2
3
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
125
100
75
50
TJ=125°C
25
TJ=-55°C
TJ=25°C
0
1
2
3
4
5
6 7
8
9
VGE, Gate to Emitter Voltage (V)
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=100A
5
4
3
Ic=50A
2
1
Ic=25A
0
6
8
10
12
14
14
VCE=300V
12
VCE =480V
10
8
6
4
2
0
0
25
50
75
100
125 150 175 200
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
8
VCE=120V
IC = 50A
TJ = 25°C
16
10
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
0
4
Gate Charge
18
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
150
On state Voltage vs Junction Temperature
4
3.5
Ic=100A
3
2.5
Ic=50A
2
1.5
Ic=25A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
16
-50
VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
80
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
125
70
60
50
40
July, 2006
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
TJ=-55°C
30
20
10
0
-50
TJ, Junction Temperature (°C)
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
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4-6
APTGF50H60T3G – Rev 2
Ic, Collector Current (A)
150
APTGF50H60T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VGE = 15V
50
40
Tj = 125°C
VCE = 400V
RG = 2.7Ω
30
20
0
25
50
75
100
125
200
175
150
VGE=15V,
TJ=125°C
125
100
75
50
150
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 400V
R G = 2.7Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VGE=15V,
T J=125°C
125
150
40
T J = 125°C
30
20
TJ = 25°C
0
0
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
0
150
1.5
Eoff, Turn-off Energy Loss (mJ)
TJ=125°C,
VGE=15V
VCE = 400V
R G = 2.7Ω
1
0.5
0
0
25
50
75
100
125
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
2
E on, Turn-On Energy Loss (mJ)
100
10
10
2.5
VCE = 400V
VG E = 15V
RG = 2.7Ω
2
TJ = 125°C
1.5
1
0.5
0
150
0
ICE, Collector to Emitter Current (A)
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
3
120
V CE = 400V
V GE = 15V
TJ= 125°C
Eon, 50A
2
1.5
Eoff, 50A
1
0.5
100
80
60
July, 2006
2.5
IC , Collector Current (A)
Switching Energy Losses (mJ)
75
VCE = 400V, VGE = 15V, RG = 2.7Ω
50
40
20
50
Current Fall Time vs Collector Current
60
30
25
ICE, Collector to Emitter Current (A)
60
50
VGE=15V,
TJ =25°C
VCE = 400V
RG = 2.7Ω
40
20
Eon, 50A
0
0
0
5
10
15
20
Gate Resistance (Ohms)
25
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0
200
400
600
VCE , Collector to Emitter Voltage (V)
5-6
APTGF50H60T3G – Rev 2
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
60
APTGF50H60T3G
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
240
VCE = 400V
D = 50%
RG = 2.7Ω
TJ = 125°C
TC= 75°C
200
160
120
80
ZCS
ZVS
hard
switching
40
0
50
0
VCE, Collector to Emitter Voltage (V)
20
40
60
80
100
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
July, 2006
0.1
0.05
0
0.00001
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTGF50H60T3G – Rev 2
Thermal Impedance (°C/W)
0.6