APTM10HM19FT3G
Full - Bridge
MOSFET Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13 14
Q3
11
22
7
19
Features
• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
10
23
Q2
8
Q4
26
4
27
3
30
29
32
31
15
16
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
13
32
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
100
70
50
300
±30
21
208
75
30
1500
Unit
V
A
V
mΩ
W
A
July, 2006
18
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTM10HM19FT3G– Rev 1
Q1
VDSS = 100V
RDSon = 19mΩ typ @ Tj = 25°C
ID = 70A @ Tc = 25°C
APTM10HM19FT3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 100V
VGS = 0V,VDS = 80V
Min
VGS = 10V, ID = 35A
VGS = VDS, ID = 1mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
IS
VSD
dv/dt
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
19
2
Min
VGS = 10V
VBus = 100V
ID = 70A
Typ
5100
1900
800
200
Unit
Max
Unit
µA
mΩ
V
nA
pF
nC
92
35
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 70A
R G = 5Ω
70
Test Conditions
ns
95
125
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 70A, R G = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 70A, R G = 5Ω
276
µJ
302
304
µJ
320
Min
Typ
Tj = 25°C
Max
70
50
1.3
5
200
Tj = 125°C
350
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 70A
IS = -70A
VBus = 66V
diS/dt = 100A/µs
Max
250
1000
21
4
±100
40
Source - Drain diode ratings and characteristics
Symbol
Typ
Tj = 25°C
Tj = 125°C
Tj = 25°C
0.5
Tj = 125°C
1
Unit
A
V
V/ns
ns
µC
July, 2006
IDSS
Characteristic
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 70A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
www.microsemi.com
2-6
APTM10HM19FT3G– Rev 1
Symbol
APTM10HM19FT3G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
150
125
100
4.7
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
Min
R 25
Max
0.6
Typ
50
3952
Max
Unit
°C/W
V
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTM10HM19FT3G– Rev 1
28
17
1
July, 2006
SP3 Package outline (dimensions in mm)
APTM10HM19FT3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.7
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
125
VGS=15V, 10V & 9V
250
200
I D, Drain Current (A)
8V
150
7V
100
6V
50
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
0
75
T J=-55°C
50
T J=25°C
25
T J=125°C
T J=-55°C
0
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
8
70
1.6
Normalized to
V GS=10V @ 35A
1.4
VGS=10V
1.2
VGS=20V
1
1
2
3
4
5
6
7
VGS , Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
ID, DC Drain Current (A)
0.8
60
50
40
30
20
10
0
0
50
100
150
200
250
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
www.microsemi.com
July, 2006
RDS(on) Drain to Source ON Resistance
T J=125°C
4-6
APTM10HM19FT3G– Rev 1
ID, Drain Current (A)
300
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
VGS=10V
ID= 35A
2.0
1.5
1.0
0.5
0.0
-50 -25
25
50
75 100 125 150
Maximum Safe Operating Area
1.1
1.0
0.9
0.8
0.7
1ms
limited by
RDSon
100
0.6
10ms
10
Single pulse
TJ=150°C
TC=25°C
100ms
1
-50 -25
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=70A
T J=25°C
14
VDS=20V
12
VDS=50V
10
V DS =80V
8
6
4
2
0
0
40
80
120 160 200 240 280
Gate Charge (nC)
July, 2006
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
www.microsemi.com
5-6
APTM10HM19FT3G– Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM10HM19FT3G
APTM10HM19FT3G
Delay Times vs Current
Rise and Fall times vs Current
160
120
t d(off)
80
VDS=66V
RG=5Ω
T J=125°C
L=100µH
60
40
td(on)
120
100
tr
60
40
20
0
0
0
20
40
60
80
100
I D, Drain Current (A)
120
0
20
40
60
80
100
ID, Drain Current (A)
120
Switching Energy vs Gate Resistance
Switching Energy vs Current
1.5
V DS =66V
RG =5Ω
T J=125°C
L=100µH
0.5
Switching Energy (mJ)
0.75
Eoff
Eon
0.25
Eon
VDS=66V
ID=70A
TJ=125°C
L=100µH
1
Eoff
0.5
0
Eon
0
0
20
40
60
80
100
120
0
10
I D, Drain Current (A)
Operating Frequency vs Drain Current
ZCS
200
150
100
50
VDS=66V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
ZVS
Hard
switching
0
13
25
38
50
30
40
50
60
63
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
250
20
Gate Resistance (Ohms)
300
Frequency (kHz)
tf
80
20
Eon and Eoff (mJ)
V DS=66V
R G=5Ω
T J=125°C
L=100µH
140
t r and tf (ns)
t d(on) and td(off) (ns)
100
1000
TJ=150°C
100
75
I D, Drain Current (A)
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6-6
APTM10HM19FT3G– Rev 1
July, 2006
VSD, Source to Drain Voltage (V)