Thyristor Modules
Thyristor/Diode Modules
ITRMS
ITAVM
VRRM
PSKT 56
PSKH 56
= 2 x 100 A
= 2 x 64 A
= 800-1800 V
Preliminary Data Sheet
TO-240 AA
1
VRSM
VDSM
VRRM
VDRM
V
V
900
1300
1500
1700
1900
800
1200
1400
1600
1800
Version 1
PSKT
PSKT
PSKT
PSKT
PSKT
56/08io1
56/12io1
56/14io1
56/16io1
56/18io1
PSKH 56/08io1
PSKH 56/12io1
-PSKH 56/16io1
--
ITRMS, IFRMS
ITAVM, IFAVM
TVJ = TVJM
TC = 83°C; 180° sine
TC = 85°C; 180° sine
ITSM, IFSM
TVJ = 45°C;
VR = 0
PSKT
PSKT
PSKT
PSKT
PSKT
56/08io8
56/12io8
56/14io8
56/16io8
56/18io8
PSKH 56/08io8
PSKH 56/12io8
PSKH 56/14io8
PSKH 56/16io8
PSKH 56/18io8
7
4
5
100
64
60
A
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1500
1600
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1350
1450
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
11 200
10 750
A 2s
A 2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
9100
8830
A 2s
A 2s
150
A/µs
500
A/µs
1000
V/µs
TVJ = TVJM
repetitive, IT = 150 A
f =50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 0.45 A
non repetitive, IT = ITAVM
diG/dt = 0.45 A/µs
TVJ = TVJM;
VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
PGM
TVJ = TVJM
IT = ITAVM
tP = 30 µs
tP = 300 µs
PGAV
W
W
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
3000
3600
V~
V~
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Mounting torque (M5)
Terminal connection torque (M5)
t = 1 min
t=1s
5 4 2
3
1
5 42
3
6 1
5 2
3
1
5 2
PSKH
Version 1
PSKT
Version 8
PSKH
Version 8
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
●
●
●
●
●
●
90
g
●
●
●
DC motor control
Softstart AC motor controller
Light, heat and temperature control
Advantages
●
●
●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
International standard package,
JEDEC TO-240 AA
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Gate-cathode twin pins for version 1
Applications
●
Typical including screws
6 7 1
Features
10
5
0.5
VISOL
3
PSKT
Version 1
Maximum Ratings
(dv/dt)cr
Weight
6
Version 8
Test Conditions
(di/dt)cr
3
Type
Symbol
∫i2dt
2
Space and weight savings
Simple mounting with two screws
Improved temperature and power
cycling capability
Reduced protection circuits
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
http://store.iiic.cc/
Symbol
Test Conditions
IRRM, IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
VT, VF
IT, IF = 200 A; TVJ = 25°C
1.57
V
VT0
rT
For power-loss calculations only (TVJ = 125°C)
0.85
3.7
V
mΩ
VGT
VD = 6 V;
1.5
1.6
100
200
V
V
mA
mA
IGT
VD = 6 V;
Characteristic Values
TVJ
TVJ
TVJ
TVJ
=
=
=
=
5
25°C
-40°C
25°C
-40°C
TVJ = TVJM;
VD = 2/3 VDRM
0.2
10
V
mA
IL
TVJ = 25°C; tP = 10 µs; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/µs
450
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
200
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.45 A; diG/dt = 0.45 A/µs
2
µs
tq
TVJ = TVJM; IT = 150 A, tP = 200 µs; -di/dt = 10 A/µs
VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM
150
µs
QS
IRM
TVJ = TVJM; IT, IF = 50 A, -di/dt = 3 A/µs
100
24
µC
A
RthJC
per
per
per
per
0.45
0.225
0.65
0.325
K/W
K/W
K/W
K/W
12.7
9.6
50
mm
mm
m/s 2
dS
dA
a
1: IGT, TVJ = 125°C
mA
VGD
IGD
RthJK
10
V
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
2
1
3
1
5
6
4
4: PGAV = 0.5 W
5: PGM =
IGD, TVJ = 125°C
0.1
100
101
5W
6: PGM = 10 W
102
mA 104
103
IG
Fig. 1 Gate trigger characteristics
thyristor/diode; DC current
module
thyristor/diode; DC current
module
other values
see Fig. 8/9
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
typ.
1000
TVJ = 25°C
µs
tgd
100
typ.
Limit
10
1
10
100
mA
IG
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT/PSKH Version 1
PSKT Version 8
PSKH Version 8
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
http://store.iiic.cc/
1000
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 ∫i2dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus onstate current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3 x PSKT 56 or
3 x PSKH 56
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
http://store.iiic.cc/
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Circuit
W3
3 x PSKT 56 or
3 x PSKH 56
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
PSKT 56
PSKH 56
Z thJC(t)
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
180°
120°
60°
30°
0.45
0.47
0.49
0.505
0.52
Constants for ZthJC calculation:
i
1
2
3
Rthi (K/W)
ti (s)
0.014
0.026
0.41
0.015
0.0095
0.175
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
PSKT 56
PSKH 56
ZthJK(t)
RthJK for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJK (K/W)
0.65
0.67
0.69
0.705
0.72
Constants for ZthJK calculation:
i
1
2
3
4
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Rthi (K/W)
ti (s)
0.014
0.026
0.41
0.2
0.015
0.0095
0.175
0.67
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
http://store.iiic.cc/