www.advmat.de www.MaterialsViews.com Song Bai, Jing Ge, Lili Wang, Ming Gong, Mingsen Deng, Qiao Kong, Li Song, Jun Jiang,* Qun Zhang,* Yi Luo, Yi Xie, and Yujie Xiong* Photoexcited electrons need to be efficiently separated from the holes in a semiconductor, allowing their delivery to specific sites for various applications including photovoltaics and photocatalysis.[1,2] For photocatalysis, reaction molecules receive the charges (i.e., electrons and holes) from the surface sites for further redox reactions. In competition with this charge-transfer process is electron–hole (e–h) recombination, which is a key factor that limits the quantum efficiency of semiconductors in related applications.[3] In order to suppress e–h recombination, a widely used approach is to decorate metal nanoparticles on an n-type semiconductor,[1,4] whereby the photoexcited electrons migrate to the metal across a junction and become trapped due to the Schottky barrier whereas the holes freely diffuse to the semiconductor surface (Figure 1a). In comparison, when a p-type semiconductor is used to form an interface with the metal particles, the carriers will flow in the opposite direction, whereby the holes transfer to the metal (also driven by the Schottky barrier) and the photoexcited electrons are left on the semiconductor (Figure 1b).[3] In both cases, the efficacy of such a strategy for reducing e–h recombination is often subjected to two factors: 1) the emergence of defects through the formation of an interface in the hybrid structures, as recombination tends to occur in bulk defects or on surface defects;[1,5–8] 2) the lack of bulk-to-surface channels for the electrons and/or holes, as the formed interface reduces the exposed surfaces of the metal and the semiconductor and thus makes it difficult for the reaction molecules to pick up the photogenerated charges for redox reactions on the surface.[9] In this communication, we demonstrate a novel semiconductor–metal–graphene stack design, which can perfectly overcome these two limitations and allows the harnessing of the photo-induced charge flow for efficient e–h separation. Our proof-of-concept demonstration is based on the use of cuprous S. Bai,[+] J. Ge,[+] L. Wang, Prof. M. Gong, Dr. M. Deng, Q. Kong, Prof. L. Song, Prof. J. Jiang, Prof. Q. Zhang, Prof. Y. Luo, Prof. Y. Xie, Prof. Y. Xiong Hefei National Laboratory for Physical Sciences at the Microscale Collaborative Innovation Center of Chemistry for Energy Materials School of Chemistry and Materials Science Laboratory of Engineering and Material Science National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei, Anhui 230026, P.R. China E-mail: [email protected]; [email protected]; [email protected] [+]These authors contributed equally to this work. DOI: 10.1002/adma.201401817 Adv. Mater. 2014, 26, 5689–5695 COMMUNICATION A Unique Semiconductor–Metal–Graphene Stack Design to Harness Charge Flow for Photocatalysis oxide (Cu2O) as a semiconductor in the stack structure. In the literature, a study of a Au–Cu2O core–shell system has shown that Cu2O is present in its single-crystal form in the hybrid structure.[10,11] We thus employed Cu2O as the semiconductor in our stack design, as the single-crystal nature of Cu2O would reduce the number of interfacial defects. In addition, Cu2O, a p-type semiconductor with a direct bandgap of around 2 eV, is known to be capable of harvesting solar energy in a very broad visible spectral region and has been widely employed as a prototypical photocatalyst in various reaction systems.[12–16] With such a p-type semiconductor implemented in the metal–semiconductor hybrid structures the holes are efficiently extracted by the Schottky barrier (see the difference in Figure 1a and 1b). In fact, the low mobility of hole carriers in bare semiconductors constitutes one of the bottlenecks for their efficiency in photocatalysis.[1,17] The charge flow in the p-type semiconductor– metal hybrid structures may expedite the migration of holes from the semiconductor to the metal, thus better balancing the rates of photogenerated electrons and holes that reach the surface so that more efficient redox reactions can be accomplished. We first examined the charge behavior in Cu2O nanocubes decorated with Pd, a widely used semiconductor–metal hybrid configuration. Pd has been demonstrated as a metal with a perfect work function for forming a Schottky junction with the {100} facets of the Cu2O nanocubes.[18] Figure 1c and 1d show the morphologies of the bare and Pd-decorated Cu2O nanocubes used in our study, respectively (also see Figure S1, Supporting Information). The Pd nanoparticles have irregular shapes and facets that normally cause tremendous interfacial defects in the hybrid structures. To examine the charge-separation behavior, we employed photocurrent measurements to characterize the samples under illumination of <550 nm (which corresponds to the bandgap of Cu2O) (Figure 1e). The photocurrents for photoelectrodes made of the Pd-decorated Cu2O are roughly twice as high as those of the bare Cu2O nanocubes. Given that the samples have a comparable capability for light absorption below 550 nm (Figure S2, Supporting Information), the photocurrent measurements are believed to offer an informative evaluation for the efficiency of e–h separation. With this acquired information, the question remained why our metal-decorated semiconductor structure did not induce a significant improvement in the charge separation.In order to reveal this we employed ultrafast transient absorption (TA) spectroscopy, a robust tool for real-time tracking of the carrier dynamics that are involved in nanostructured systems,[19–21] to characterize the samples. Using a time-resolved, visible pump/ white-light continuum (WLC) probe scheme spanning several © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim wileyonlinelibrary.com 5689 www.advmat.de COMMUNICATION www.MaterialsViews.com Figure 1. a,b) Schematic band diagrams showing the migration of photoexcited carriers to the metal driven by the Schottky junction between metal and a) n-type semiconductor or b) p-type semiconductor. c,d) TEM images of the synthesized c) bare Cu2O nanocubes and d) Pd-decorated Cu2O nanocubes. e) Photocurrent vs. potential responses of photoelectrodes made of bare Cu2O nanocubes and Pd-decorated Cu2O nanocubes at the same Cu2O loading weight, measured in a 0.5 M Na2SO4 electrolyte under chopped irradiation (λ < 550 nm). f) Ultrafast transient absorption signal (probed at 600 nm) as a function of probe delay for bare Cu2O nanocubes and Pd-decorated Cu2O nanocubes, recorded with a 480-nm pump. The inset of (f) shows the PL spectra of the corresponding samples excited at 275 nm. nanoseconds with femtosecond resolution, we investigated the bare Cu2O nanocubes and the Cu2O nanocubes decorated with Pd nanoparticles to evaluate their performance for e–h separation. The 500–700 nm WLC probe yielded essentially the same TA features when pumped with a center wavelength at 480 nm, and a set of representative data taken at 600 nm is represented in Figure 1f. From the temporally resolved TA spectra shown in Figure 1f, one can see that bare Cu2O exhibits a decay profile 5690 wileyonlinelibrary.com of the positively valued excited-state absorption (ESA) transients within the initial time window of around 100 ps after photoexcitation, followed by the negatively valued TA transients. The negatively valued transients can be assigned to ground-state bleaching (GSB) and stimulated-emission (SE). Basically, the carrier dynamics of interest can be retrieved from the ESA, GSB, and SE transients: 1) the ESA tracks the evolution of energized electrons in their excited states; 2) the GSB reflects © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Adv. Mater. 2014, 26, 5689–5695 www.advmat.de www.MaterialsViews.com COMMUNICATION Figure 2. a) TEM image of the synthesized Pd−Cu2O core−shell structures. b) Schematic illustration for the limitation in metal–semiconductor core– shell structures. c) Ultrafast transient absorption signal (probed at 600 nm) as a function of probe delay for Pd−Cu2O core−shell structures in reference to bare Cu2O nanocubes, recorded with a 480-nm pump. The inset of (c) shows the PL spectra of the corresponding samples excited at 275 nm. d) Photocurrent vs. potential responses of photoelectrodes made of Pd−Cu2O core−shell structures in reference to bare Cu2O nanocubes at the same Cu2O loading weight, measured in a 0.5 M Na2SO4 electrolyte under chopped irradiation (λ < 550 nm). the population of holes in the ground state or electrons around the conduction band edge; 3) the SE results from radiative recombination of energized electrons with holes. It is expected that for a well-designed photocatalyst structure, the TA signals arising from SE and GSB can be greatly suppressed. Evidently, the TA spectra of bare Cu2O show distinct SE and GSB signals indicating a low efficiency of charge separation. To verify this finding, we collected the photoluminescence (PL) emission spectra of both samples (inset of Figure 1f; see also the excitation spectrum in Figure S3, Supporting Information) which may provide insight into the e–h recombination. The welldefined PL peaks suggest remarkable charge recombination in the bare Cu2O. In comparison, this situation is not significantly improved when the Cu2O nanocubes are decorated with Pd nanoparticles, as observed from both the TA and PL spectra. Specifically, the PL spectrum of the Pd-decorated Cu2O sample shows an enhancement of photon emission at >600 nm (where the energy is lower than the Cu2O energy gap), which can be ascribed to the e–h recombination of the shallow surface states coming from interfacial defects.[21] Given that the Schottky junction aids in facilitating the charge separation, this finding suggests that certain amounts of defects serving as recombination centers may be involved in the Cu2O–Pd interface in the decorated configuration. Intuitively, the metal–semiconductor core–shell structures could be candidates to reduce the number of interfacial defects, as long as the interface is built based on single-crystal cores and shells. In this hybrid structure the charge transfer occurring Adv. Mater. 2014, 26, 5689–5695 at the metal–semiconductor interface can also benefit from a larger interfacial area. Moreover, the metal–semiconductor interface could be protected against corrosion in the reaction medium. For this reason, we synthesized Pd–Cu2O core–shell structures as shown in Figure 2a. Unfortunately, the core–shell structure bears an intrinsic drawback: it is hard for the holes created in the cores to be transferred beyond the shells,[9] as illustrated in Figure 2b. The holes accumulated at the metal– semiconductor interface should be regularly depleted; if not, they can recombine with the photoexcited electrons in the semiconductor shells. Electron-donating molecules in photocatalysis are known to consume holes but they require a charge-transfer “vehicle” with high mobility that obviously cannot be offered by the core–shell structure. This feature has been evidenced by the ultrafast TA spectra recorded for the core–shell structures. Predominant SE and GSB transients were observed in the Pd–Cu2O core–shell sample (Figure 2c), which is consistent with the PL observations (inset of Figure 2c). Nevertheless, the unchanged photon emissions of the shallow surface states (>600 nm) imply the success in reducing the number of interfacial defects.[22] These observations suggest that the inevitable trapping of holes in the cores still causes a high recombination rate with the energized electrons in the shells across the interface. Consequently, similarly to the decorated configuration the core–shell system does not exhibit a significant improvement of the charge separation, as verified by the photocurrent tests (Figure 2d). We then decided to adopt a different approach to circumvent this undesirable situation. As illustrated in Figure 3a, this new © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim wileyonlinelibrary.com 5691 www.advmat.de COMMUNICATION www.MaterialsViews.com Figure 3. a) Schematic illustration for the charge flow in semiconductor–metal–graphene stack design. b) Schematic illustration of the synthetic approach. c) TEM and d) HRTEM images of the synthesized Cu2O–Pd–rGO stack structures. e) Ultrafast transient absorption signal (probed at 600 nm) as a function of probe delay for Cu2O–Pd–rGO stack structures in reference to bare Cu2O nanocubes, recorded with a 480-nm pump. The inset of (e) shows the PL spectra of the corresponding samples excited at 275 nm. f) Photocurrent vs. potential responses of photoelectrodes made of Cu2O–Pd–rGO stack structures in reference to bare Cu2O nanocubes at the same Cu2O loading weight, measured in a 0.5 M Na2SO4 electrolyte under chopped irradiation (λ < 550 nm). design perfectly integrates a graphene sheet, which is a wellknown two-dimensional material with high in-plane conductivity,[23] into our metal–p-type semiconductor core–shell structure. As the graphene sheet is in intimate contact with the metal component in our design, we expect that the holes accumulated 5692 wileyonlinelibrary.com on the metal can migrate to the graphene through a metal-tographene pathway and be consumed by oxidized molecules in due course, whereas the energized electrons stay on the semiconductor for reduction reactions. Graphene-based materials have been extensively used in solar-conversion applications © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Adv. Mater. 2014, 26, 5689–5695 www.advmat.de www.MaterialsViews.com Adv. Mater. 2014, 26, 5689–5695 This ternary stack was proven to substantially suppress undesired e–h recombination, which is readily identified from its ultrafast TA spectra (Figure 3e). The SE and GSB transients associated with charge recombination are shown to nearly vanish in the TA spectrum of our ternary stack, which also conforms well with the PL measurements (inset of Figure 3e). These observations indicate that the holes in the ground state have been substantially dispersed throughout the graphene sheet, and at the same time the defect density on the metal–semiconductor interface remained low. Markedly, such improvement has led to a roughly 7-fold photocurrent enhancement as compared to the bare Cu2O at –0.5 V (Figure 3f). Moreover, the stack structure shows much smaller radii of the semicircular Nyquist plots as compared to the other samples in electrochemical impedance spectroscopy (EIS) (Figure S11, Supporting Information), indicating a lower charge-transfer resistance. These data clearly demonstrate that the harmful e–h recombination has been greatly suppressed by the fast chargetransfer processes in the ternary stack. To better understand the interfaces involved, we analyzed the electronic structures of the Cu2O–Pd and Pd–graphene interfaces by first-principles simulations.[34] It was found that the partial projected density of states (PDOS) of Pd(100) were significantly altered upon interfacing with Cu2O(100) or graphene (Figure S12, Supporting Information), suggesting a strong hybridization of their electronic states. This is indicative of the high probability of charge transfer at the interfaces of Cu2O–Pd and Pd–graphene. In comparison, the hybridization of a direct Cu2O–graphene interface was relatively weak, not favoring the charge transfer between Cu2O and graphene. This feature was experimentally confirmed by the distinct PL and improved photocurrents for the Cu2O–rGO structure (Figure S13, Supporting Information). It has been shown that this deficiency limits the applications of reported semiconductor–graphene hybrid structures decorated with metal nanoparticles.[25–28] The PL and photocurrent measurements for our Pd-decorated Cu2O–rGO structures also confirmed this (Figure S14, Supporting Information). In addition, the potential line-up diagrams show that the interfacial barrier of the Cu2O–Pd junction is 0.414 eV (Figure S15, Supporting Information), indicating the formation of a Schottky junction in our p-type semiconductor–metal hybrid structure.[3] Such a Schottky junction ensures the electron flow from Pd to Cu2O. On the other hand, Pd is known to have a relatively high work function and can easily wet the carbon surface,[35,36] which is favorable to the formation of an intimate interface with the graphene sheet. As there is no barrier at the Pd–graphene interface, the holes accumulated on the Pd can freely migrate to the graphene. The information of charge flow gleaned above validated our concept. We were in a position to further implement our designed materials for photocatalysis, using hydrogen production from water as a model reaction.[37] In this reaction, methanol was used as a sacrificial agent to consume the holes, and the light source was confined to λ < 550 nm which corresponds to the bandgap of Cu2O. It was anticipated that the improved e–h separation by our stack design (whereby its light-absorption capability at λ < 550 nm was retained) should result in a better photocatalysis performance. In a proof-of-concept demonstration, the hydrogen production rates (per catalyst weight) were © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim wileyonlinelibrary.com COMMUNICATION as it is a good material for charge transport (including electrons and holes).[24] Note that our stacked structure is clearly different from the hybrid structures composed of a semiconductor, graphene, and metal that have been reported in the literature. The reported structures are semiconductor–graphene hybrids decorated with metal nanoparticles, in which the metal is randomly deposited on the surface of either graphene or semiconductor.[25–28] Our stack structure was fabricated by embedding {100}-faceted Pd nanocrystals between a single-crystal Cu2O semiconductor and a reduced graphene oxide (rGO), a system termed Cu2O–Pd–rGO for short, as illustrated in Figure 3b. In this synthesis, the Pd nanocrystals are firstly formed on the rGO sheets by reducing K2PdCl4 with ascorbic acid on the graphene oxide (GO). From the transmission electron microscopy (TEM) images (Figure S4a, Supporting Information) it can be seen that the Pd nanocrystals deposited on the rGO sheets have a well-defined cubic profile with an edge length of around 10 nm. The high-resolution TEM (HRTEM) images (Figure S4b, Supporting Information) further confirmed that the cubic nanocrystals are single crystals enclosed by Pd {100} facets. In the next step, we conformally coated Cu2O single-crystal shells on the Pd nanocrystals. This step remained the biggest challenge because of the large (ca. 9.8%) lattice mismatch between Cu2O and Pd [refer to the lattice constants: 4.27 Å for Cu2O (JCPDS No. 78-2076) versus 3.89 Å for Pd (JCPDS No. 65-6174)]. Previous research has indicated that to attain a single-crystal heterostructure via conventional epitaxial growth only a moderate lattice mismatch (<2%) between the two materials is allowed.[29] To accomplish the single-crystal growth of our Cu2O shells, we developed a non-epitaxial growth approach to circumvent the large lattice mismatch between Pd and Cu2O. In this approach, the Pd–rGO samples are coated with Cu2O shells by reducing CuSO4 with sodium ascorbate, during which hydroxyl intermediates Cu(OH)42− appear,[30] followed by a three-stage nucleation and crystallinization process (Figure S5– S7, Supporting Information). Electron-microscopy characterization demonstrates that it is possible to grow a single-crystal Cu2O shell on the Pd core via this method. As shown in Figure 3c, the Pd nanocubes on the rGO sheets are conformally coated with a 15-nm thick layer of Cu2O. The HRTEM image (Figure 3d) identifies that the core is the original Pd nanocube and the shell is a piece of {100} facetenclosed Cu2O single crystal. As the core–shell structure is wellsustained on the rGO sheets, the components form an intimate interface. The single-crystal nature of both Pd and Cu2O in our stack structure ensures a high efficiency of the charge transport in each component as compared to that of their polycrystalline counterparts.[31] Inherited from the Pd–rGO precursors, the Pd cores remain in direct contact with the rGO sheets in the ternary stack. Energy-dispersive spectroscopy (EDS) mapping analyses, together with corresponding scanning TEM (STEM) images (Figure S8, Supporting Information), further confirmed the compositions of the Pd cores and the Cu2O shells. It is worth noting that most O-containing functional groups were removed from the rGO sheets during their reduction by ascorbic acid and ascorbate (Figure S9, S10, Supporting Information),[32,33] enabling the rGO sheets to transport the charges with a relatively high mobility. 5693 www.advmat.de COMMUNICATION www.MaterialsViews.com Acknowledgements This work was financially supported by the 973 Program (No. 2014CB848900, 2010CB923300), the NSFC (No. 21101145, 91127042, 21173205, 91221104, 20925311), the Recruitment Program of Global Experts, the CAS Hundred Talent Program, the CAS Strategic Priority Research Program B (No. XDB01020000), the Fundamental Research Funds for the Central Universities (No. WK2060190025, WK2310000035), and the Construction Project for Guizhou Provincial Key Laboratories (ZJ[2011]4007). Received: April 22, 2014 Revised: May 21, 2014 Published online: June 11, 2014 Figure 4. Photocatalytic average rates of hydrogen production under irradiation (λ < 550 nm). 25 mg of Cu2O-based photocatalysts were added to water with 25 vol % methanol for the measurements. found to be in the order of Cu2O–Pd–rGO stack > Pd–Cu2O core–shell ≅ Pd-decorated Cu2O > bare Cu2O (Figure 4), where the ternary stack came out as the best as was expected (the performance of our stack was also superior to that of Cu2O–rGO, see Figure S13d, Supporting Information). The stack structures turned out to have an excellent photocatalytic stability, as the morphology and composition of the stack sample was well maintained after photocatalysis (Figure S16, Supporting Information). Note that the Pd–rGO sample did not show any photocatalytic activity in the absence of the Cu2O semiconductor. In summary, the improved photocatalytic performance demonstrates a niche solution from our designed stack structure for efficient charge transfer and e–h separation. As a matter of fact, the separation of e–h pairs is a critical step to nearly all applications involving semiconductor materials. The interfacial defect density and charge-transfer channels represent two critical factors to these processes, both of which were well modulated by designing our stack structure. Apparently, this strategy is not only limited to the case of p-type semiconductors but may also be applicable to hybrid structures of metal and n-type semiconductors, as all the limitations and solutions presented in this work are universal; thus this work represents an important advancement towards designing semiconductorbased hybrid materials. We envision that it will open new windows to rationally designing hybrid materials for photoinduced applications. Experimental Section See the Supporting Information for materials synthesis, sample characterizations, ultrafast spectroscopy characterizations, photocurrent and photocatalytic measurements, and computational methods. 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