Applied Surface Science 253 (2007) 3154–3159 www.elsevier.com/locate/apsusc Effects of water plasma immersion ion implantation on surface electrochemical behavior of NiTi shape memory alloys in simulated body fluids X.M. Liu a, S.L. Wu a, Paul K. Chu a,*, C.Y. Chung a, C.L. Chu a,c, K.W.K. Yeung b, W.W. Lu b, K.M.C. Cheung b, K.D.K. Luk b b a Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China Division of Spine Surgery, Department of Orthopaedics and Traumatology, The University of Hong Kong, Pokfulam, Hong Kong, China c Department of Materials Science and Engineering, Southeast University, Nanjing 210018, China Received 8 April 2006; accepted 2 July 2006 Available online 2 August 2006 Abstract Water plasma immersion ion implantation (PIII) was conducted on orthopedic NiTi shape memory alloy to enhance the surface electrochemical characteristics. The surface composition of the NiTi alloy before and after H2O-PIII was determined by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) was utilized to determine the roughness and morphology of the NiTi samples. Potentiodynamic polarization tests and electrochemical impedance spectroscopy (EIS) were carried out to investigate the surface electrochemical behavior of the control and H2O-PIII NiTi samples in simulated body fluids (SBF) at 37 8C as well as the mechanism. The H2O-PIII NiTi sample showed a higher breakdown potential (Eb) than the control sample. Based on the AFM results, two different physical models with related equivalent electrical circuits were obtained to fit the EIS data and explain the surface electrochemical behavior of NiTi in SBF. The simulation results demonstrate that the higher resistance of the oxide layer produced by H2O-PIII is primarily responsible for the improvement in the surface corrosion resistance. # 2006 Elsevier B.V. All rights reserved. PACS: 82.47.Wx Keywords: NiTi; Plasma immersion ion implantation; Water plasma immersion ion implantation; Electrochemical impedance spectroscopy 1. Introduction NiTi alloys have become important materials in biomedical applications on account of their outstanding properties such as the shape memory effect and super-elasticity [1,2]. Medical applications of NiTi that have been reported include orthopedics, dentistry, as well as components in medical devices and instruments [3,4]. However, the high nickel content has raised health concerns because nickel release into body fluids can induce toxic and allergic responses [5], especially when fretting is prevalent. In this respect, the proper surface treatment can simultaneously achieve the goal of improved * Corresponding author. Tel.: +852 27887724; fax: +852 27889549. E-mail address: [email protected] (P.K. Chu). 0169-4332/$ – see front matter # 2006 Elsevier B.V. All rights reserved. doi:10.1016/j.apsusc.2006.07.008 biocompatibility and surface corrosion resistance. It has been shown that improvement of the corrosion resistance and biocompatibility of NiTi can be accomplished by the formation of a stable, uniform, and highly adherent oxide film on its surface [6–9]. Many techniques such as chemical passivation, anodic oxidation, electropolishing, thermal oxidation, and laser surface melting have been proposed to modify the NiTi surface [10–14]. In particular, plasma immersion ion implantation (PIII) is an effective surface modification technique that excels for samples and components with an irregular shape like medical implants [15–17]. Water PIII is an efficient technique to implant oxygen species such as H2O+, HO+ and O+ into the materials with minimal energy spread compared to oxygen PIII which introduces both O+ and O2+. Thus, H2O PIII may yield a better surface oxide layer that can offer better enhancement in the surface electrochemical properties. In our previous work, X.M. Liu et al. / Applied Surface Science 253 (2007) 3154–3159 we have conducted H2O-PIII and successfully improved the surface bioactivity of titanium metals and surface corrosion resistance of magnesium alloys [18,19]. In this work, we used water PIII to improve the surface properties of NiTi shape memory alloys. The composition and morphology of the NiTi surface were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. In order to investigate the surface electrochemical characteristics of NiTi before and after PIII, electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization tests were conducted in simulated body fluids (SBF). EIS is an effective tool to assess the surface corrosion process and disclose the mechanism for thin films fabricated on metals or alloys [20–22]. An electrochemical system can be established using EIS and different equivalent electrical circuit models can be adopted to explain the phenomena that occur at the metal/film and film/solution interfaces as well as inside the film [23–25]. 2. Experimental 2.1. Water plasma immersion ion implantation The materials used in this work were Ni–50.8 at.% Ti alloy bars (SE508, Nitinol Device Company, Fremont, USA). The samples were cut to 1 mm thick and 4.8 mm in diameter. Before implantation, the specimens were mechanically polished with 200, 400, 800 and 1200 grit SiC papers sequentially, followed by ultrasonic cleaning in acetone and deionized water and then air dried. Before water plasma implantation, the samples were sputtered for 5 min with argon plasma at 5 kV to remove surface contaminants. Subsequently, water PIII was conducted using the parameters listed in Table 1. After water PIII, the samples showed a blue surface color. 2.2. Surface analysis X-ray photoelectron spectroscopy (XPS, Physical electronics PHI 5802, Minnesota, USA) was used to obtain the indepth distributions of O, Ti and Ni. An aluminum X-ray source with a power of 350 W was used, the vacuum was 2 108 Pa, and the analysis area was approximately 0.8 mm2. Photoelectrons were detected at a take-off angle of 458. Depending on the oxide layer thickness, a sputtering rate of either about 12 nm/ min or 4 nm/min was employed to obtain the depth profiles. Atomic force microscopy (AFM, Auto Probe CP, Park Scientific Instruments) was utilized to characterize the surface Table 1 H2O-PIII instrumental parameters RF power Sample voltage Pulse width Frequency Pulse duration Base pressure Working pressure 1000 W 40 kV 30 ms 100 Hz 240 min 1 105 Torr 3.4 104 Torr 3155 topography and roughness of the surface. It was operated in the contact mode at room temperature. 2.3. Surface electrochemical tests The samples for surface electrochemical tests were mounted in epoxy to expose a surface area of 0.282 cm2. Electrochemical impedance spectroscopy was conducted in simulated body fluids at 37 8C using a three-electrode cell consisting of a pair of graphite rods as the counter electrode and a saturated calomel electrode (SCE) as the reference electrode. The ion concentrations in the SBF are similar to those in human body fluids and they can be found in previous publications [26]. The EIS measurements were performed at open-circuit conditions using an EG&G PAR Model 283 potentiostat/galvanostat and a PAR Model 5210 lock-in-amplifier. The EIS spectra were obtained over the frequency range 100 kHz to 5 MHz at opencircuit potential with amplitude of 10 mV. The experimental results were then fitted with the software, ZSimpWin 3.21. Potentiodynamic measurements were performed on the NiTi samples by a potentiostat (VersaStat II, EG&G, USA) at a pH value of 7.42 in the SBF. A potential between 0.7 and +1.5 V was applied to the samples with a scanning rate of 0.2 mV/s. 3. Results and discussion 3.1. Surface characterization The XPS depth profiles of the H2O-PIII and control (unimplanted) NiTi samples are depicted in Fig. 1. The near surface of the H2O-PIII sample shows graded Ni, Ti and O concentrations. The maximum oxygen content is observed at the surface and it diminishes gradually with depth. Ti is abundant at the surface and varies slightly with the depth. The near surface structure is essentially TiO2 due to the fairly high solubility of O in Ti and previous experiments have shown that H2O-PIII into Ti produces surface TiO2 [18]. In addition, owing to the high affinity on O to Ti compared to Ni, Ni is almost absent in the near surface except in the vicinity of the interface between the oxide and substrate. This is also due to the higher preferential sputtering rate of Ni compared to Ti during H2OPIII [27]. The oxide layer thickness in the H2O-PIII sample (Fig. 1a) is about 40 nm whereas an oxide layer only several nm thick is observed on the control sample (Fig. 1b) arising from natural surface oxidation. The intensity of Ni after H2O-PIII is lower than that of the control sample as shown in the XPS survey scan in Fig. 2. The dominant O 1 s peak on the H2O-PIII sample confirms that there is large quantity TiO2 formed on the H2O-PIII NiTi surface, and it is also confirmed by the shift of the O 1 s peak to a higher energy. After H2O-PIII, Ti on the NiTi surface is oxidized and the Ti 2p peak also shifts towards a higher energy. The morphology and roughness of the surfaces before and after H2O-PIII are determined by atomic force microscopy. As shown in Fig. 3(a), the surface of the control sample is composed of flat regions, shallow scratches, and some protrusions. After H2O-PIII, many fine and evenly distributed 3156 X.M. Liu et al. / Applied Surface Science 253 (2007) 3154–3159 Fig. 3. AFM images: (a) control sample; (b) H2O PIII sample. protrusions (Fig. 3b) are observed on the surface, and they can be attributed to energetic bombardment by the ions in the water plasma, namely O+, OH+ and OH2+. Moreover, no obvious pores can be observed on the surface. The root mean square (RMS) surface roughness value of the control sample measured over an area of 5 mm 5 mm is 7.04 nm which is slightly higher than that of the H2O-PIII sample of 6.05 nm. 3.2. Potentiodynamic tests Fig. 1. XPS depth profiles: (a) H2O-PIII sample; (b) control sample. Fig. 2. XPS surface survey scans: (a) H2O-PIII sample; (b) control sample. In the potentiodynamic tests, the breakdown potential (Eb) is a measure of the stability and corrosion resistance of the surface layer. A higher or more positive value of Eb indicates a larger corrosion resistance [28]. As shown in Fig. 4, a significant improvement in the corrosion resistance is evidenced by a large shift of the breakdown potential Eb from 250 mV for the control Fig. 4. Potentiodynamic polarization curves. X.M. Liu et al. / Applied Surface Science 253 (2007) 3154–3159 NiTi to 1000 mV for the H2O-PIII sample. Moreover, the passive current density measured from the H2O-PIII is smaller by about a factor of 10 compared to the control. The results show that the H2O-PIII sample has significantly better corrosion resistance. 3157 The corrosion resistance of the H2O-PIII sample is closely related to the properties of the surface oxide barrier. The electrical resistance of the oxide layer is conventionally studied by electrochemical impedance spectroscopy using AC voltage. The Bode plot (magnitude and phase of impedance Z versus log of frequency) is usually used to represent the result [29]. Fig. 5(a) shows the Bode plot obtained from the control NiTi sample and the related simulated plot. From the Bode plot, the phase angle is about zero at high frequencies, indicating that the impedance is dominated by solution resistance in this frequency range. The phase angle remains close to 808 over an intermediate range of frequencies implying a near capacitive response of the native oxide. Besides, at the low frequency region, the phase angle shifts to a lower value due to polarization resistance of the oxide layer [30]. The Bode magnitude plot is characterized by two distinctive regions. In the higher frequency region (1–100 kHz), the Bode magnitude plot exhibits constant log jZj versus log( f) at high frequencies. This is due to the response of the electrolyte resistance Rs. In the low and mid frequency regions, the spectra display a linear slope of about 1, which is indicative of the capacitive behavior of the native oxide layer [31]. The electrochemical response of the control sample is best simulated employing the equivalent electrical circuit, Rs(Q1R1), as shown in Fig. 5(b). The Randle’s model is usually used to simulate the oxide film [29]. In this model, Rs, corresponds to the solution resistance in the SBF between the working electrode and reference electrode. The resistance R1 represents the electrical resistance of the native oxide layer. The element Q1 is a constant phase element (CPE) that is defined by ZQ = [C(jv)n]1, where C is the capacitance of an ideal capacitor for n = 1 [32]. 0 < n < 1 represents the deviation from an ideal capacitor, which is related to the surface roughness [33]. The physical model (Fig. 5b) for this equivalent circuit assumes that the oxide layer naturally formed on the NiTi possesses resistance and capacitance [34]. The surface can be envisaged as a parallel circuit of resistance R due to ionic conduction through the oxide layer and capacitance C due to the dielectric property [30] in order to assess the electrical resistance of the native oxide layer on the NiTi surface. As shown in Fig. 5, the single oxide layer model is adequate in explaining the electrochemical behavior of the control NiTi alloy exposed to SBF. Fig. 6(a) exhibits the equivalent electric circuit, Rs(Q1(R1(Q2R2))), used to simulate the impedance spectra of the H2O-PIII sample. This model takes into account the surface that is composed of an inner oxide layer (oxide layer shown in the XPS profile in Fig. 1) and an outer oxide layer with protrusions (observed in the AFM image) [33]. Q2 and R2 are the inner oxide layer capacitance and resistance or the charge transfer resistance, respectively while Q1 and R1 correspond to the outer oxide layer capacitance and resistance (or the electrolyte resistance between the protrusions), respectively. Fig. 6(b) compares the experimental and simulated impedance results of the H2O-PIII sample in SBF at 37 8C. The simulation is conducted using the model Fig. 5. (a) Bode plot of control NiTi sample in SBF; (b) physical model and equivalent circuit Rs(Q1R1). Fig. 6. (a) Physical model and equivalent circuit Rs(Q1(R1(Q2R2))); (b) Bode plot of water implanted NiTi sample in SBF. 3.3. Electrochemical impedance spectroscopy 3158 X.M. Liu et al. / Applied Surface Science 253 (2007) 3154–3159 Table 2 Result of electrochemical impedance spectroscopy measurements Specimen Control H2O-PIII Rs (V cm2) 42.5 43.02 R1 (V cm2) 7 1.7 10 1.1 106 Q1 (F cm2) 6 3.0 10 1.0 107 shown in Fig. 6(a). After water implantation, the NiTi alloy has a two-time constant response [35]. In the high frequency range, Q1 and R1 are the capacitance of the oxide layer and resistance of the protrusions in the outer oxide layer. The low frequency region of the impedance is related to the capacitance Q2 and resistance R2 at the interface of the inner oxide and electrolyte (SBF). The results presented in Fig. 6 indicate that the physical model of a double oxide layer can explain the electrochemical behavior of the NiTi alloy H2O-PIII. The information about the intrinsic characteristics of the surface of the control and H2O-PIII samples can be obtained by the aforementioned analysis. When the control sample is placed in SBF, its impedance spectrum reveals a passive process with a phase angle of about 808 over a wide range of frequencies. The SBF penetrates the native oxide layer by diffusion and attacks the substrate. However, the spectrum of the H2O-PIII is quite different. The existence of the two-time constant response is related to the difference in the surface structure which can be seen from the physical model. The outer oxide layer with many protrusions interacts with the surrounding SBF. Some SBF can penetrate the outer oxide layer through defects produced during the implantation process. Usually in this process, some pitting can be produced at the interface between the oxide layer and substrate. In our previous work, the surface of the control sample was totally destroyed after potentiodynamic tests whereas only some pitting occurred on the surface of the oxygen plasma implanted sample [36]. Table 2 summarizes the simulation results obtained using the relative equivalent electrical circuits. The simulation error is smaller than 10%. It can be seen that the values of n1 are very close to unity for the two types of samples. This indicates a near capacitive behavior of the native oxide layer on the control as well as the oxidized layer produced by H2O-PIII. A little higher value of n1 for the H2O-PIII sample demonstrates a lower roughness than the control as confirmed by the AFM results. The oxide layer resistance of the H2O-PIII sample is composed of R1 and R2, especially R2 (charge transfer resistance). Moreover, the value of n2 is comparatively lower. This indicates a dominant resistive behavior of the oxide inner layer on the H2O-PIII sample. The resistance of the control is only composed of R1 (passive oxide layer resistance) which is lower than the resistance R2 of the H2O-PIII sample. The resistance of the oxide layer in the H2O-PIII sample is found to be higher by a factor of 4 compared to the control. A similar tendency can be observed in the potentiodynamic curve (Fig. 4). The breakdown potential increases from 250 mV for the control to 1000 mV for the H2O-PIII sample while the passive current density decreases by a factor of 10. n1 R2 (V cm2) Q2 (F cm2) n2 0.88 0.91 8.0 107 1.1 107 0.80 4. Conclusion The H2O-PIII technique can create an effective titanium oxide layer on the surface of NiTi alloy. The surface roughness of the control sample is higher than that of the H2O-PIII sample. Two different physical models with related equivalent electrical circuits are devised to simulate the EIS results. The impedance of the surface of the H2O-PIII sample is four times that of the control sample which has only a native oxide. A similar tendency is observed in the potentiodynamic corrosion tests. Due to the high resistance of the oxide layer produced by water PIII, the breakdown potential increases from 250 mV for the control to 1000 mV for the H2O-PIII sample and the passive current density decreases 10 times. 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