Valved Cracker source for Phosphorus :
KPC SERIES
n Full modularity of the design for simple P charge
n loading, maintenance or further upgrading
n “Zero burst” patented design
n Three-zone temperature concept
n Fast and precise control over phosphorus flux
n 100% leak tight all metal metering valve
n Wide product range from 250cc to 2500 cc
n Low condenser temperature to avoid Pwhite
n instabilities
KPC250
The RIBER multi-zone phosphorus valved cracker source is
The source-zone is connected to a valve that provides me-
dedicated to III-V base semiconductor MBE growth, desi-
chanical means of instantaneously controlling the tetramic
gned to procure loading capacity, beam flux levels, rapid
phosphorus vapor flux over several decades, while offering
flux adjustment/shut-off possibilities and cracking efficiency
complete chamber isolation if reloading the source is requi-
that meets the requirements of the production environ-
red.
ment.
A cracker zone situated at the outlet of the source brings
The cell consists of three main assemblies made of carefully
thermal means to crack the primary vapor to P2 molecules
selected materials which are chemically and heat-treated
independently of the flux level, thus ensuring minimum di-
to provide state of the art flux purity.
rect white phosphorus formation inside the growth chamber
A vapor generator source-zone produces a stable vapor
and bringing an additional level of process control.
of tetrameric molecules through in-situ sequential or simul-
The instrument is fully modular; any of the main assembly
taneous conversion to white phosphorus of part of the red
can be serviced or replaced independently of the others as
phosphorus charge.
simply as disconnecting a Conflat® flange.
W ORK I N G P R I N C I P LES
The evaporator is placed inside the condenser and receives the
justment and complete interruption of the phosphorus flux in the
red phosphorus primary loaded charge. For an easy loading, the
cracker. The valve is fully leak tight in the closed position enabling
evaporator heated crucible is mounted on an independent base
cell reloading without venting. The valve is externally heated by a
flange. After loading, the red phosphorus is heated to an evapo-
heated mantle to prevent white phosphorus condensation on the
ration temperature to produce P4 that will condense into white
valve mechanism.
phosphorus. The condenser surrounds the red phosphorus and is
connected to the flux valve. An isolation valve vents and pumps
The cracker stage is inserted inside the growth chamber and is
down the condenser during re-loading operations. P4 vapor
connected to the valve.
condenses on white phosphorus and the condenser wall and is
re-evaporated at a rate dependant upon the condenser tempe-
A high conductance transit tube allows the transfer of P4 mole-
rature typically 60/100°C.
cules to the cracking zone. The cracker stage design allows an
efficient dissociation of the P4 molecules into the cracking zone.
The condenser is set in a thermostatic enclosure allowing inde-
The cracker stage design allows an efficient association of the P4
pendent temperature control of the condenser between 40 and
molecules to dimmers. The cracker is heated by a flat Ta filament.
120°C.
A wire thermocouple is used to monitor the cracker stage tempe-
The enclosure is heated with a fan assisted force air circulation and
rature.
temperature is monitored by a controller.
An independent and optional water panel can be provided around
An all-metal valve is placed between the condenser and the
the cracker to limit the heat load in the growth chamber.
cracker stage. It is fully independent and can easily be serviced
or replaced. The micrometer driving mechanism enables fine ad-
Evaporation
(T ≈ 300 - 350°C)
P red
Evaporator
Condensation
(T < 100°C)
P4
Condenser
Evaporation
P white
Cracking
(T > 850°C)
P4
Cracking zone
s p e ci f ic a ti o n s
requirements
A valve controller is strongly recommended
Schematic view of the KPC1200
for KPC250 and KPC1200
Evaporator loading flange
Multi-valve controller
Thermal enclosure
NVC6000
Condenser
Cracker power & T/C feedthrough
Valve heating mantel
Single-valve controller
Cracker
Transit tube
AVP504
KPC1200
Flux valve
P2
source model Characteristics
S40 KPC250
S63 KPC1200
Filament
S250 KPC2500
2 Flat foil
Heating filaments
Wire
Al203 / Stainless steel
Crucible / valve material
Usefull capacity (Max load dimensions)
Mounting flange (min)
250 cc
1200 cc
2500 cc
CF 40 ( 2.75")
CF 63 (4.5")
CF 250 (12")
Valve characteristics
Valve
Heater
Single
Double
Heating mantle
Heating panel
Open conductance
0.3 l/s
< 5.10-10 l/s
Close conductance
Valve actuator
< 5.10-8 l/s
Micrometer valve
Micrometer rotating thimble
Stem stroke (thimble revolution)
3.8 mm (6 turns)
Temperature stability
+/- 0.5°c
cracker Characteristics
Max outgassing temperature
1300°C
1150°C
Typical temperature
850°C
950°C
Power consumption
Power supply recommended
500 W max
350 W max
300 W max
2 DC 12.5A-60V
2 DC 19A-40V
2 DC 12.5A-60V
Power output connector
PEEK
Thermocouple connector
Uniplug 3 mm²
C-type
Water flow
N.A
Min flow 0.3 l/min - 5 bars max
Water connection
N.A
2xSwagelok fitting Ø3
Temperature stability
+/- 0.5°c
Reservoir Characteristics
Loading port
CF 63
CF 100
Evaporator max outgassing temperature
550°C
Evaporator typical operating temperature
350°C
Evaporator max power consumption
60 W max
240 W max
Evaporator thermocouple connector
200 W max
C-type
Power supply recommended
2 DC 12.5A-60V
2 DC 19A-40V
2 DC 12.5A-60V
Condenser max temperature
70°C
120°C
130°C
Condenser typical operating temperature
50°C
60°C
80°C to 110°C
Power output connector
Uniplug 3 mm²
Temperature stability
+/- 0.5°c
O P ERA T I N G T HE SOUR C E
Cracker power cable (2)
Cell (1)
Process control system
Cracker T/C cable (6)
Reservoir power cable (2)
Flux valve controller (9)
Motor control cable
Reservoir T/C cable (6)
Reservoir filament PID controller (5)
Power supplies (3)
Cracker filament PID controller (5)
Communication assembly (8)
Reservoir command cable (4)
Cracker command cable (4)
Communication strap
RS 422 (7)
RESUL T S
Outstanding InAsxP1-x Compositional Uniformity
Through the growth of InAsP/InP multi-quantum wells, Riber application laboratory
demonstrates the excellent uniformity profile of the KPC1200. Composition of the InAsP
quantum well is highly dependent on the As/P flux ratio and on the substrate temperature
over the platen.
±4Å for the optimal V/III ratio, corresponding to a As/P composition variation of ± 0.05%
ORDER I N G I N FOR M A T I O N
cell
PRoduct guide
KPC 250
Source gauge
Volume cc
S40
KPC
250
Technology
cell model
p.n.
H2O
flange
S 40 KPC 250
R240 897 4
-
CF 40 (2.75" )
S 40 KPC 250
R240 897 5
-
CF 40 (2.75")
S 63 KPC 1200
R240 869 3
-
CF 63 (4.5")
S 250 KPC 2500
R235 084 4
YES
CF 250 (12")
i.V.L.
O.L.
O.D.
Please contact Riber
SERVICES
The production of phosphorus results in the formation of white phosphorus -
Please contact Riber for more information
a material extremely toxic to humans.
about our service pack offer.
Under standard conditions cracker sources are built to limit any remaining white
phosphorus in the condenser. For operators to feel secure with phosphorus handling, Riber offers a complete service pack including a complete cleaning and
refurbishing of your phosphorus valved cracker cell at Riber plant.
s o u r c e s e l e cti o n g u i d e
Systems
source model
S40 KPC 250
S63 KPC 1200
S250 KPC 2500
MBE 32
Compact 12
Compact 21
RIBER
EPINEAT
MBE 412 (4"/6")
MBE 49
MBE 6000
MBE 7000
GEN II
MOD GEN II
GEN 930
VEECO / VARIAN
GEN 10
GEN 20
GEN 200
GEN 2000
V80
VG
V90
V100
V150
Riber sources are also available for use on systems from Eiko, Anelva, Ulvac,
SVTA and DCA, as well as customs chambers. Contact Riber for details.
OTHER SYSTEMS
RECOMMENDED
CONTACT RIBER
FOR MORE DETAILS
KPC 2500
T e c h n o l o gic a l l e a d e r s h ip
Riber is the world leading supplier of MBE processing equipment
and related services.
In total, 750 of our MBE systems have been installed with at least one system in each
of the 35 countries with which MBE is involved. This represents 75% of the global market.
Capitalizing on its 30 years of experience, the company’s core philosophy is to design systems
in close association with customers. Riber has invented and designed major features which
are now found in all MBE systems.
Riber plays a key role in the development of MBE technology, providing customers with solutions
from equipment to epitaxial growth.
w o r l d wi d e p r e s e nc e
Headquarters
For more infor mation:
Tel: +33 (0)1 39 96 65 00
E m a i l : i n f o @ r i b e r. c o m
Inter net: www.r iber.com
RIBER - 31, rue Casimir Périer, B.P 70083, 95873 Bezons, France
Tel: +33 (0)1 39 96 65 00 - Fax: +33 (0)1 39 47 45 62 - email:[email protected] – Internet: www.riber.com
60830S72–2012- Technical specifications reserved
Representatives