DMN2004K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V(BR)DSS
RDS(ON)
20V
0.55Ω @ VGS = 4.5V
0.9Ω @ VGS = 1.8V
ID
TA = +25°C
630mA
410mA
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.

Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected up to 2KV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 
Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Applications



DC-DC Converters

Power Management Functions
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 e3

Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)
SOT23
Drain
D
Gate
ESD PROTECTED TO 2kV
Gate
Protection
Diode
Top View
S
G
Source
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2004K-7
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Shanghai A/T Site
2009
W
Feb
2
DMN2004K
Document number: DS30938 Rev. 9 - 2
NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
YM
NAB
YM
NAB
Mar
3
2010
X
Apr
4
2011
Y
May
5
Jun
6
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2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
July 2013
© Diodes Incorporated
DMN2004K
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +85°C
ID
630
450
mA
Drain Current (Note 5) VGS = 1.8V
Steady
State
TA = +25°C
TA = +85°C
ID
410
300
mA
IDM
1.5
A
Pulsed Drain Current (Note 6)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
Value
Units
PD
350
mW
RθJA
357
°C/W
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
20


V
Test Condition
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS


1
µA
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS


1
µA
VGS = 4.5V, VDS = 0V
VGS(th)
0.5

1.0
V
VDS = VGS, ID = 250µA
RDS(ON)

0.4
0.5
0.7
0.55
0.70
0.9
Ω
VGS = 2.5V, ID = 500mA
|Yfs|
200


ms
VDS =10V, ID = 0.2A
IS


0.5
A
VSD
0.6

1
V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Source Current
Diode Forward Voltage (Note 7)
VGS = 4.5V, ID = 540mA
VGS = 1.8V, ID = 350mA

VGS = 0V, IS = 500mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss


150
pF
Output Capacitance
Coss


25
pF
Reverse Transfer Capacitance
Crss


20
pF
Gate Resistance
Rg

292

Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
Qg

0.9

Gate-Source Charge
Qgs

0.2

nC
VDS = 15V, VGS = 4.5V, ID = 0.5A
ns
VGS = 8V, VDS = 15V,
RG = 6, RL = 30
Gate-Drain Charge
Qgd

0.2

Turn-On Delay Time
tD(on)

5.7

Turn-On Rise Time
tr

8.4

tD(off)

59.4

Turn-Off Delay Time
VDS = 16V, VGS = 0V
f = 1.0MHz
Turn-Off Fall Time
tf

37.6

Body Diode Reverse Recovery Time
trr

5.5

ns
IS = 0.5A, dI/dt = -100A/µs
Body Diode Reverse Recovery Charge
Qrr

0.85

nC
IS = 0.5A, dI/dt = -100A/µs
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Pulse width ≤10µS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2004K
Document number: DS30938 Rev. 9 - 2
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July 2013
© Diodes Incorporated
DMN2004K
0.9
1,000
VGS = 2.2V
VDS = 10V
Pulsed
900
VGS = 2.0V
800
0.6
ID, DRAIN CURRENT (mA)
ID, DRAIN CURRENT (A)
VGS = 1.8V
VGS = 1.6V
VGS = 1.4V
0.3
VGS = 1.2V
0
0
700
600
500
400
200
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.8
1.2
2
1.6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Reverse Drain Current vs. Source-Drain Voltage
1
VGS = 10V
Pulsed
VDS = 10V
0.9
ID = 1mA
Pulsed
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.5
T A = 125° C
TA = 150° C
TA = 25° C
0.1
0.2
-50 -25
0
25 50 75 100 125 150
Tch, CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage
vs. Channel Temperature
1
T A = -25° C
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance
vs. Drain Current
1.0
TA = 25°C
TA = 150° C
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE () (NORMALIZED)
TA = 125° C
TA = 85° C
TA = -55° C
T A = 25 ° C
0.1
0.2
TA = 0° C
1.0
VGS = 5V
Pulsed
0.5
TA = 85° C
TA = -55° C
0.1
0
-75
T A = 25 ° C
TA = -55° C
0
0.4
5
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
VGS(th), GATE THRESHOLD VOLTAGE (V)
TA = 85° C
100
1
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
TA = 150° C
300
TA = 0 °C
TA = -25° C
0.6
1.0
0.8
0.4
ID, DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance
vs. Drain Current
DMN2004K
Document number: DS30938 Rev. 9 - 2
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0.9
0.8
0.7
0.6
0.5
ID = 540mA
0.4
0.3
0.2
0.1
0
0
2
4
6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source, On-Resistance
vs. Gate-Source Voltage
July 2013
© Diodes Incorporated
DMN2004K
0.5
1
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
0.8
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE () (NORMALIZED)
T J = 25°C
0.9
VGS = 1.8V
0.7
0.6
0.5
VGS = 2.5V
0.4
VGS = 4.5V
0.3
0.2
0.2
0.4
0.8
1
1.2
0.6
ID, DRAIN CURRENT (A)
Figure 7 On-Resistance vs. Drain Current and Gate Voltage
VGS = 4.5V,
ID = 540mA
0.3
VGS = 10V,
ID = 280mA
0.2
0.1
0
-50
-25
50
0
25
75 100 125 150
Tj, JUNCTION TEMPERATURE (° C)
Figure 8 Static Drain-Source, On-Resistance vs. Temperature
1
10,000
1,000
IDR, REVERSE DRAIN CURRENT (A)
VGS = 0V
TJ = 150°C
100
TJ = 100°C
10
T A = 150° C
0.1
T A = 125° C
TA = 85° C
T A = 25° C
0.01
1
TJ = 25 °C
TA = 0° C
T A = -25° C
TA = -55° C
0.1
2
18 20
10 12 14 16
6
8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Drain Source Leakage Current vs. Voltage
4
1
0.001
1
0.5
VSD, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Reverse Drain Current vs. Source-Drain Voltage
0
120
VGS = 10V
TA = -55° C
f = 1MHz
VGS = 0V
100
CT, CAPACITANCE (pF)
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
0
0.4
TA = 25° C
TA = 85° C
0.1
TA = 150° C
Ciss
80
60
40
Coss
20
Crss
0.01
1
10
1,000
100
ID, DRAIN CURRENT (mA)
Figure 11 Forward Transfer Admittance vs. Drain Current
DMN2004K
Document number: DS30938 Rev. 9 - 2
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0
0
2
4
8 10 12 14 16 18
6
VDS, DRAIN SOURCE VOLTAGE (V)
Figure 12 Capacitance Variation
20
July 2013
© Diodes Incorporated
DMN2004K
10
0.1
VGS, GATE-SOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
1
TA = 25°C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 13 Diode Forward Voltage vs. Current
8
VDS = 15V
ID = 0.5A
6
4
2
0
0
0.5
1
1.5
2
2.5
Qg, TOTAL GATE CHARGE (nC)
Figure 14 Gate-Charge Characteristics
3
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
M
K1
D
F
J
L
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Y
Z
C
X
DMN2004K
Document number: DS30938 Rev. 9 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2013, Diodes Incorporated
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DMN2004K
Document number: DS30938 Rev. 9 - 2
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