Biennial Report 2002/03 - Solid-State Electronics Department 4.4.5 171 Microelectronic Patterning Technics for K2SO4/Au NanoCrystals Student: Supervisor: M. Barth Q. T. Do Introduction The nanoparticle coated crystal (NCC) is a very promising candidate for the self-assembled fabrication of electronic devices at the nanoscale (cf. chapter 4.4.4 and 4.4.6). In this work the compatibility of NCC to standard technological processes is investigated. In practical the thermal budget of NCC is given and their compatibility to a complete optical lithography procedure is shown. Finally, the conductivity of Au-K2SO4 NCC bridging a metal-finger structure is given. Nanoparticle coated micro-crystals (NCC) with a K2SO4 core and Au nanoparticles were provided by the University of Strathclyde, Glasgow, in a suspension diluted in propanol at the ratio 7:1. The process of NCC deposition onto a wafer is described in chapter 4.4.4. For the ease of identifying specific NCC the wafers were patterned with a numbered Pt test grid. The topology of the NCCs was measured using an atomic force microscope DI 3000 in tapping mode. The size of the investigated NCC is a few hundred nanometres long and wide (700-2000 nm) and the height is about 50-250 nm. Compatibility to Optical lithography Au-K2SO4 NCC were deposited on GaAs substrates. In order to identify a specific NCC a numbering grid on the substrates were fabricated before deposition. The shape and surface of identical NCC was investigated using scanning force microscope using a DI 3000 in tapping mode. The following standard lithography procedure was applied: (1) Spinning-on of photo resist at 7000 rpm, annealing on a hot plate at 95°C; (2) Exposure of a pattern using UV light, (3) Development in one-to-one solution of sodium hydroxide (alkaline) and pure water, and (4) Stripping of the photo resist using hot Aceton (b) (a) (c) 1 µm Fig. 1 AFM micro scans of a selected NCC (a) before lithography steps, (b) after the first lithography step, (c) after the second lithography step 172 Biennial Report 2002/03 - Solid-State Electronics Department The steps 1-4 were repeated twice. The adhesion of the NCC on the wafer is so high that there is neither a loss of NCC nor a change of position regardless of any treatment tested. A more detailed analysis of the NCC surface shows even no surface integrity modification or a change of the height and shape of the NCC. This investigation shows that the NCC withstands all chemical treatments of a full lithography technology. The NCCs of investigation were covered with photo resist and not exposed to water or developer which may solve the salt core of the NCC. Annealing treatment A set of samples based on Au-K2SO4 NCC on Si-substrates was prepared in order to study the surface after annealing. The heat treatment was carried-out in a rapid thermal annealer (RTA) at temperatures ranging from 300°C to 560°C. The roughness is analysed using the AFM in a scan field of approximately 1 x 1 µm² in the central part of the NCC surface. The roughness data are plotted in Fig. 2 vs. annealing temperature. Up to temperatures of 500°C almost no modification is observed and the surface roughness remains at about 1 nm. At temperatures above 500°C the surface roughness increases rapidly attributed to a clustering of the Au nanoparticles. The AuK2SO4-NCC surface after the annealing experiment is shown in Figure 2a, b. After annealing at 560°C a steeper increase of surface roughness and a significant clustering (fig. 2a,b) indicate that this is the critical temperature. (a) 300 °C 0 nm 0 nm 500 nm 500 nm (b) 560 °C s u rfa c e ro u g h n e s s [n m ] 0 nm Fig. 2 0 nm 500 nm 2 .0 NCC B NCC A 1 .5 1 .0 0 .5 0 .0 (c) 500 nm as d e p o s ite d 300 400 500 600 a n n e a lin g te m p e ra tu re [° C ] Surface of Au-K2SO4 NCC measured with AFM: topology scan of the NCC (a) after 300°C treatment, (b) after560 °C treatment, and (c) development of surface roughness vs. annealing temperature for two NCC samples A, B. Biennial Report 2002/03 - Solid-State Electronics Department 173 The mean radius of the Au nanoparticles used for NCC fabrication has been determined to 1.025 by high-resolution AFM without tiopronin coating after deposition on a Si wafer. Using the model from Borel and Buffat [1] the melting-point of a gold nanoparticles at this size can be calculated to 619°C. This analysis indicates that the change of the surface roughness beyond 500 °C is driven by initial melting of the Au nanoparticles as indicated in dark islands in Fig. 2b. Au-K2SO4-NCC Current-Transport In the final part of the work the conductivity of a single Au-K2SO4 NCC was measured. The test structure consists of 1 µm fingers of 100 nm Au separated by 1 µm spacing. In order to suppress the leakage current to below 10 pA the structure was realized on a SiO2-coated Si-wafer by optical contact printing. The Au-K2SO4 NCC was deposited onto the pattern such that it forms a bridge between two neighbouring contacts (cf Fig. 3a). Finally, the same metallisation was defined and evaporated such that the NCC is sandwiched between two metallisation layers. The I-V characteristic (cf. Figure 3b) exhibit a symmetric but somewhat non-linear behaviour with a current of typically 100 nA at 1 V. It was measured three times over the same NCC giving reproducible results. This also indicates that the NCC must be photo resist resistant. 0.3 0.2 current [µA] NCC 0.1 0.0 -0.1 -0.2 -0.3 b a Fig. 3 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 voltage [V] Conductivity test of a Au-K2SO4 NCC: (a) metal finger pattern on with a NCC bridging the contact and (b) I-V characteristic of a single NCC at room-temperature Conclusions The Au-K2SO4-NCC sticks on the wafer surface and is resistant against the tested resists. It is fully compatible to an optical lithography process. The thermal budget of the NCC exceeds 500 °C which opens-up various process technologies. The conductivity of a single NCC is high enough aim at electronic devices. References [1] K. Schaber; “Thermodynamik disperser Systeme”, Skriptum, Karlsruhe 2003
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