Detailed Specifications of Dual Ion-Beam Sputter Deposition
(DIBSD) System for the Development of Optical Thin Film
Multilayer Coatings and Devices
I. HIGHLIGHTS OF THE EQUIPMENT
(i)
The system will be used for fabricating low loss optical multilayer thin film devices
of various materials (viz. dielectric, semiconductor, composites, ceramic, metal) on
polished substrates (glass, metal, semiconductor etc.) of diameter 150 mm (04 nos.
simultaneously) with absolute thickness uniformity* of ≤ 1% grown at a minimum
deposition rate of 2Å/s in each planet. Thickness uniformity ≤ 0.6% between two
adjacent planets.
(ii)
The system should have two independent ion sources, (i) one ion source for
sputtering (IBS) the material from the target and (ii) another ion source will be used
for pre-cleaning of the substrate and ion-assisted deposition (IAD). The two ion
sources, target, and substrate may be such that both the ion sources can be used at
the same time continuously for typically 12 hrs.
(iii) The target holder should be capable of holding at least four targets for sequential
deposition from each target. Appropriate shielding to avoid cross contamination of
targets from each other. During deposition, the target may swing by ± 5o for better
thickness uniformity and uniform target utilization.
(iv) The base pressure of the vacuum system should be 5x10-8 mbar and leak tightness
of < 10-9 mbar lit s-1.
(v)
The deposition process should be carried at ~ 5x10-4 – 5x10-5 mbar pressure at
argon, xenon, nitrogen and /or oxygen atmosphere.
(vi) The system should have facility for in situ measurement of rate of deposition and
thickness of the films by both quartz crystal monitor and optical thickness monitor.
(vii) The pressure of the gas being used in the system should be controlled and
maintained constant during deposition using suitable mass flow controllers,
capacitance gauge and suitable conductance controller.
(viii) The operation of the system (including pump-down process and film deposition)
should be fully automated and computer controlled with complete manual
operation.
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(ix) The process control software should have all the adequate provisions to control,
monitor and display all the coating processes parameters including (a) vacuum
cycle, (b) deposition source power supplies for multilayer deposition, (c) mass flow
controls, (d) ion gun parameters, (e) optical and crystal monitor/controllers, (f)
substrate rotation and manipulations, (g) interlocks, (h) chamber heating, cooling,
(i) substrate heating, (j) venting, (k) residual gas analysis and (l) error logging and
diagnosis, etc.
(x)
The multilayer deposition process recipe and control software should have all the
requisite capabilities to deposit customized multilayers as per given design.
(xi) Entire system should be clean-room (class 10000 / ISO-7) compatible.
(xii) Provision for Load Lock Chamber with manual substrate transfer (max. 250 mm
dia., one at a time) in the substrate holder.
* Thickness uniformity is defined as (∆
∆λ/λ
λ) x 100%, where ∆λ is the change in
centre wavelength across a 150 mm diameter glass substrate (exclude 2.5 mm from
edges) and λ is the average centre wavelength.
II. SPECIFICATION OF MODULES, COMPONENTS AND SUBSYSTEMS:
The modules and sub-modules of the thin film deposition system proposed to be
procured in this tender are listed below. The quantity and specifications of the modules
and sub-modules are the minimum and must be included in the scope of delivery. The
modules and sub-modules should be of reputed make with high reliability factor. The
supplier may indicate separately other modules or upgrade the specifications of modules
in the tender for the reliable operation of the complete system.
1. Vacuum Chamber: Vacuum chamber is the process chamber in which all film
deposition processes will be done. It should have provision to mount the ion source for
sputtering, ion-source for IAD, neutralizers for both the ion sources, substrate holders,
thickness monitors, vacuum gauges, pumping system, valves, substrate heater, target
assembly, interlocks, etc., the details of which is listed below. CF flanges to be used in
maximum places. Double Viton ‘O’-ring with differential pumping may be used in rest of
the flanges. walls, top and base plates reinforced by strong welded shoulders. Special care
shall be taken for the optical thickness monitor flange to avoid sagging and tilting during
pumping. UHV compatible fabrication techniques shall be used throughout with
continuous internal welds and 100% root penetration on all joints, seams and flanges. All
the internal vacuum surfaces shall be finished to highest established standards of vacuum
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workmanship and shall be carefully machined (surface finish ~ 1 µm) to eliminate virtual
vacuum leaks. Interior of the chamber shall be buffed, electro-polished and chemically
ultra-cleaned.
I. Deposition process chamber - Stainless steel, type AISI-304L
• Semi-cylindrical/box type chamber (~ inner dimension 1000 mm X 1000 mm
X 1000 mm)
• Multiple water channels / double walled, for chamber cooling during deposition
and heating upto ~ 70°C during venting.
• Thermocouples for chamber inner wall temperature and substrate temperature
(room temperature-350°C) measurement with necessary CF flanges
• Wide access hinged front door with viewports and safe lock with double
Viton ‘O’-ring for differential pumping. Adequate access for all system
components including the ion guns from front door for maintenance purpose.
• Loading of samples through front door and also through the load lock chamber
• Base plate with flanges for various accessories
• DN350CF flange / suitable flange, with double Viton O-ring for differential
pumping on top of chamber to accommodate substrate holder.
• Adequate cooling for substrate holder flange
• DN500 ISO/ suitable flange on rear wall / suitable location for cryogenic pump
• Suitable CF flange for conductance control
• DN63CF flange for roughing port
• DN63CF / suitable flanges as feed-through for substrate heating
• CF 16.5” flange / or suitable size for IBS for sputtering (preferably CF flange
mounted)
• DN300CF / suitable CF flange for assist ion beam source
• 2 DN100CF / suitable flange for neutralizers
• DN200CF flange or suitable size or rectangular flange for load lock
• Three zero length (DN100CF) viewports with manual shutters, rotating sector
mask for viewing sources and substrates
• Two additional zero length (DN63CF / DN40CF) viewports (quartz) at suitable
locations for optical emission spectroscopy, etc.
• 2 DN40CF flange for high vacuum gauges with protection during deposition
• Single combined flange with double Viton O-ring for optical thickness monitor
and rotary 6 crystal quartz sensor, adequate cooling for this flange
• Additional flanges (DN40CF), e.g. for high pressure RGA etc. – position to be
decided at design review stage.
• 2 DN40CF flange for additional quartz crystal monitors
• Optical windows for source and detector modules of optical thickness monitor
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Spare ports for future up gradations - to be decided at the design review stage
Helium leak tested <1x10-9 mbar l/s. Suitable port for He leak testing of the entire
system
2 sets of SS / AlMg3 chamber liners (ultra cleaned), suitable sizes for easy
removal and re-fitting
Ultimate chamber pressure ≤ 5x10-8 mbar after suitable baking procedure.
Provision to accommodate a turbo-molecular pump (DN200CF / suitable) –
position to be decided at design review stage.
A sketch / diagram of the vacuum system showing all major and important
dimensions to be submitted along with the technical bid.
II. Pumping stack (Cryo + Rotary):
The pumping stack should consist of cryo-pump backed by dry pump. The pumping
speed and other specifications listed below are the desired specification. The pumping
system should have completely automatic pumping cycle through the process control
software. All pumps should be of standard international make. All pump line should be
304 SS or better. Appropriate de-contamination shields should be provided with the gate
valves.
A. Dry rotary backing pump for process chamber & cryo-pump
• Pumping speed approximately ~ 80 - 90 m3/hr @ 50Hz.
• Type: Multi stage roots / Screw / Scroll
• Purge gas inlet for operation with reactive gases (O2, N2) with metering valve and
flow switch.
• Pump air/water cooled, flow meter interlocked.
• Soft pump function during pumping of the chamber to avoid particulate
generation.
• Crossover from soft pump to hard pump programmable.
• Pump down time from 1x10+3 to 1x10-1mbar to be specified.
• Spares, seals, noise isolation cover, N2 purging flow control, exhaust silencer, tool
box, etc to be provided.
• Primary pumping of space between double Viton ‘O’-rings.
B. Cryopump for process chamber
• High vacuum flange DN 500 ISO-F / ISO-K for process chamber, 25KF /
40KF foreline vacuum
• Pumping speed: ~ 10000 l/s for N2 , ~ 8400 l/s for Ar,
• ~ 15000l/s for H2, ≤ 30000 l/s for H2O
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Mounting in any orientation,
Optically blind baffle between gate valve and process chamber
Ar throughput max. about 1500 scc/min
Capacity: Argon 5700 std. lit., hydrogen 45 std. lit @ 3.75x10-6 mbar.
Crossover : ≥ 400 mbar lit., Cool-down time: ~ 2.5 hr.
Temperature sensor, safety valve,
Program for automatic regeneration procedure
Fast regeneration facility, full regeneration ~ 3 hrs.
Accessories for He refill of compressor, He connecting lines to cryopump.
• Protection against contamination in He line,
• UPS (user supplied) to maintain temperature for ~30 min during power
failure.
• Provision for cryo-pump operation through UPS during power failure.
• Water cooled compressor with flow meter (5 – 15 lpm) interlocked
• Compressor: Silent with low vibration.
• Operation of compressors, replaceable cartridge,
• Interfaces: 24 V DC and/or RS 232 C
• Essential spares and tool box for cryo-pump and compressor to be
provided
• Entire cryo-pump operation integrated with the main control software
• Pump: CTI20HP / COOLVAC10000iCL/ or equivalent
* Position of the cryo-pump may be changed at the design review stage
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C. Pump down requirements:
This pumping stack should strictly match the following pump down
requirements:
i. The pressure of 5x10-8 mbar can be achieved in process chamber at
room temperature in about 12 hours after venting with dry N2 at
atmospheric pressure using an appropriate pumping and baking
procedure.
ii. The pressure of 5x10-7 mbar can be achieved in process chamber at
150°C temperature in about 3 hours after venting with dry N2 at
atmospheric pressure using an appropriate pumping and baking
procedure.
iii. Ultimate vacuum: 5x10-8 mbar
iv. Working Pressure: 5x10-4 – 5x10-5 mbar at gas load as required for 2Å/s
deposition rate.
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* Documentary evidence for arriving at the pumping speed and pumpdown times for all
the above conditions are necessary to qualify for the technical bid. During factory
acceptance test, these results to be demonstrated.
* A clear and labelled vacuum process flow diagram indicating exact position and type of
all pumps, valves, gauges, etc. to be provided along with technical bid.
*Maintenance contract for three years after the expiry of warranty for cryo- and dry
pumps. Rates for maintenance contract shall be quoted separately in the price bid.
2. Frame:
The process chamber along with pumping system must be mounted on a rigid frame.
i) Frame for the vacuum system may either a welded structure of 2” square members
mounted on a base fabricated of square members OR made up of metal sections
of suitable size. Adjustable leveling pads shall be provided on the base of the
support structure. Support frame shall be enclosed in removable panels that are
interlocked where appropriate to prevent exposure to high voltage. Oven baked
powder coating in all panels. The system may be designed for through-the–wall
use with band of panels around the sides and top. Electrical cabinets should be
preferably with caster wheels.
ii) It must have removable side panel with safety switches for maintenance and
interlocks.
3. Valving:
The system should have electro-pneumatic valves for isolating various modules. The
system must have minimum of
(i)
Gate valve for isolation between main process chamber and cryo-pump (DN500
ISO-F/K), VAT / equivalent, Preferably double O-ring flange with primary
pumping port, Three position pneumatic actuator, middle position manually
adjustable, seal: Viton, Leak rate:<1x10-9mbar l/s, Feed-through : SS bellows
(SS316L/304L), Pressure range < 1x10-8 mbar, drawing to be provided during
design review stage, 20000 cycles before first service
OR Pendulum valve (DN500F/K), VAT / equivalent, stepper motor control,
pressure controller, minimum controllable conductance ≤ 250l/s, Pressure range
< 1x10-8mbar, Preferably double O-ring flange with primary pumping port,
drawing to be provided during design review stage, 100000 cycles before first
service.
(ii) Valve for isolation between dry & cryo pump, VAT/ equivalent, Body: SS304,
Plate/ bellows: SS316L, single acting cylinder with closing spring, sealing
material: Viton, Leak rate: <1x10-9mbar l/s, feed-through: SS bellows, operating
temp:≤1500C, Flange: ISO-KF.
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(iii)
(iv)
(v)
(vi)
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Valve for roughing line (DN63CF) with soft pump function, VAT/ equivalent,
Body : SS316L, Plate/bellows: SS316L, single acting cylinder with closing
spring, Seal: bonnet/plate :Metal/Viton, Leak rate:<1x10-9mbar l/s, Feed-through :
SS bellows, operating temp: ≤1500C, 1,00,000 cycles before first service.
Electro-pneumatic valve for venting with soft vent function and particulate filter,
VCR fittings, Leak rate:<1x10-9mbar l/s.
Valve for He leak testing, valve leak rate : <1x10-9mbar l/s.
Valve for pumping of space between double Viton ‘O’-rings if required.
Valves must seal to atmosphere in both directions and mounting in any direction.
All valves larger than 1” (inch) must have position indication.
Spare seal kit and other spares for all the valves.
4. Automatic Pressure Controller and Vacuum Gauge Heads:
A. Automatic Pressure Controller
Connections for transmitter: 6 nos. (3 Pirani, 1 full range, 1 full range BA & 1
capacitance)
Error signal: Switching current max. 3 A, Switching voltage max. 60 V DC
Error signal: Working contact, potential-free 1 piece
Filter time constant: 2.1/0.32/0.1 s
Interface: RS-232 C, RS-422
Mains requirement: voltage (range) 90-250 V, 50Hz
Measurement range: max.- 55,000 mbar, min. - 5 x 10-11 mbar
Measurement rate: 100 1/s, Display rate: 4 1/s
Set point: Changeover contact, potential-free 6 pieces
Set point: Current max. 3 A,
Set point: Voltage max. 60 V DC
Analog output: 6 (1 per gauge)
Signal output: Measuring value, analog 0 to - /+10 V DC,
Output resistance 660Ω
Switching voltage 240 V with RI 256
Temperature: Operating 5-40 °C,
Gauge supply: Voltage +24 VDC ± 5%
Current: Sensor 1 to 3: 200 mA per gauge, Sensor 4 to 6: 600 mA per gauge
Interface: All vacuum controllers should have integration to the system control.
Controller and gauges: Pfeiffer/ equivalent.
B. Gauge Heads: All gauges should be of standard international make.
The quantity and the specifications of gauge heads are listed below.
i) Pirani gauge head: Three Nos. (1 DNCF16, 2 KF16)
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The gauge heads should have following specifications
Temperature compensation in the range of 5 °C ... 55 °C : all types
Bake out : up to 250 °C (DN16CF), up to 80 °C (DN16KF)
Accuracy: 10-3 - 102 mbar ± 15 %
Feature: Stainless steel, metal sealed, feed-through: Glass, Seal Metal
Filament: Tungsten, Flange: Stainless steel (DNCF16, KF16)
Measurement range: max. 1,000 mbar, min. 5 x 10-4 mbar
Output signal: Minimum load 10 k, Pressure range 2.2 - 8.5 V, Sensor error < 0.5 V
Repeatability: 10-3 - 102 mbar ± 2 %, Resolution: 1 % of reading
Response time: 80 ms, Supply: Voltage 14-30 V DC,
Set points for vacuum cycle control
ii) Capacitance manometer: One No. (1 VCR8 / 1 DN16CF)
Pressure measurement independent of type of gas
Excellent temperature compensation and excellent zero stability
Corrosion-resistant ceramic technology
Measurement range: max. 0.11mbar & min. 10-5 mbar, temperature controlled,
Accuracy : 0.5% of reading, bakeout temperature max. at the flange: 110 °C
Membrane and measuring chamber: Ceramics (Al2O3 <= 99,5 %)
Output signal: Pressure range 0-10 V,
Pipe and flange: Stainless steel
Resolution 0.003 % F.S.,
Response time: 130 ms
Supply: Voltage 14-30 V DC,
Temperature: Operating 5-50 °C
Temperature effect: on span 0.03 % of reading/°C, on zero 0.02 % F.S./°C
Automatic pressure controller to control deposition pressure using capacitance
manometer, mass flow controller and a suitable conductance controller.
Provision to control partial pressure of process gas using RGA, MFC and
suitable conductance controller.
iii) High vacuum gauge head: 2nos. (each DN40CF)
Gauges should be placed at a) near cry-pump and gate valve & b) near the substrate
a)
Full range gauge head with magnetic shielding
Flange: DN40CF stainless steel (1.4306/AISI 304L)
Measurement range (air, N2): 5×10-9 … 1000 mbar
Accuracy: ≈ ±30% in the range 1×10-8 … 100 mbar
Reproducibility: ≈ ±5% in the range 1×10-8 … 100 mbar
Operation: + 5 °C to +55 °C
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Bake out : +150 °C (without electronics unit and magnetic shielding)
Pirani measurement circuit, HV trimmer potentiometer at <1×10-4 mbar,
Trimmer potentiometer at atmospheric pressure
Operating voltage (in the measuring chamber): ≤ 3.3 kV,
Operating current : ≤ 500 µA
Output signal (measuring signal): Voltage range : ≈ 0 V to +10.5 V
Relationship: voltage-pressure logarithmic, increase 0.6 V / decade
Error signals: < 0.5 V (no supply) > 9.5 V (measurement element defective)
Output impedance: 2×10 Ω, Minimum load: 10 kΩ, short-circuit proof
Response time (pressure dependent) : p >10-6 mbar ≈10 ms, p = 10-8 mbar ≈1 s
Measuring chamber: stainless steel (1.4104),
Feed-through isolation: ceramic (Al2O3), glass
Internal seals: FPM75, Anode: Mo, Pirani filament: W, Pirani measuring tube:
Ni, Au, Ignition aid: stainless steel (1.4310/AISI 301)
b) Full range Pirani/ Bayard-Alpert
Flange size: DN 40CF, Stainless steel (1.4306/AISI 304L)
Measurement range from 5 x 10-10 to 1000 mbar
Accuracy: 10-8 - 10-2 hPa: 15 % reading
Temperature: Bakeout: 150 °C, Operating: 0-50 °C, Storage: 20-70 °C
Filament : Tungsten, and iridium yttriated
Materials in contact with media: Cu, W, glass, NiFe, Mo, stainless steel, NiCr
Output signal: Minimum load: 10 kΩ
Output signal: Pressure range
0.774 - 10 V
Pressure max.: 2,000 mbar, Repeatability: 10-8 - 10-2 hPa : 5 % reading
Sensor cable of suitable length, Supply: Voltage: 20-28 V DC
5. Process Gas Handling:
Process gas handling will consists of (a) mass flow controller and (b) a residual gas
analyzer (user supplied) to control, monitor and analyze the gas input to vacuum
chamber. The specifications and quantities of mass flow controllers are listed below.
A. Mass flow controller (MFC): Upstream pressure control must have following
sets of MFC for O2, Ar / Xe and N2 flow as specified below.
i) Operating pressure range 5x10-4 to 5x10-5 mbar.
ii) Independent controller with digital display, PID loop of MFC must have
integration to system controller, flow increment 0.1sccm, MKS / equivalent.
iii) Flow range: 0-50 sccm or as required to achieve low optical loss films
deposited at the rate of 0.2 nm/s. Each MFC calibrated to a particular gas.
iv) MFC response time < 1s, accuracy within ±1% of setpoint.
v) Only metal sealed MFC with positive shutoff valve to be used.
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vi) A clear and labelled gas flow diagram indicating mass flow controllers,
valves, etc. should be provided along with technical bid.
a) 2 MFC’s for inert gas (Ar/Xe) flow control VCR 1/4” connections into
IBS’s. Provision to connect Xe gas through electro-pneumatic shutoff
valve.
b) 2 MFC’s for inert gas (Ar/Xe) flow control VCR 1/4” connections into
neutralizers. Provision to connect Xe gas through electro-pneumatic
shutoff valve.
c) 2 MFC’s for reactive gas (O2, N2) flow control VCR 1/4” connections
into IBS’s.
d) 1 MFC for reactive gas (O2/N2) flow control VCR 1/4” connection into
chamber for gas shower inlet near substrate holder. Provision to connect N2
gas through electro-pneumatic shutoff valve.
e) Separate electro-pneumatic shutoff valves for each gas line and gas inlet
into sputter ion source, assist ion source and chamber.
f) Electro-pneumatic actuators 24V DC/suitable.
*Gas bottle and connection upto electro-pneumatic shutoff valves will be user
supplied.
6.
Substrate Heating:
The substrate heating system including PID temperature controller and power supply
and must meet following requirements:
(i) Heating range: Room temperature (RT) to 350oC continuous with +/- 2oC
accuracy. Smooth temperature control.
(ii) Infrared quartz lamps. Substrate temperature should reach 350oC in ~ 35 minutes.
(iii) Substrate temperature sensor: Thermocouple “K” type.
(iv) Programmable PID temperature controller with integration to the control system.
(v) Auto tune feature in the controller. Variable heating and cooling rate.
(vi) Temperature calibration between substrate, test glass and thermocouple are
required in the entire temperature range.
(vii) Heating configuration must have appropriate shield to avoid coating on heating
lamps.
(viii) Inclusive of power supply and fuses.
7. Substrate Holder (SH) / Sample Manipulator (SM):
Planetary rotating system: The rotating substrate holder/manipulator should be
configured in the following ways *
(i) Gear driven with speed control motor for soft starts and stops to reduce vibration
and noise.
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(ii)
A flat planetary / suitable mechanism holding up to 4 nos., 150mm dia. substrates
and should withstand continuous substrate heating up to 350oC during rotation at
maximum speed.
(iii) Substrate holder should be able to accommodate circular substrates upto 250 mm
dia. and 50mm thickness. Adapter for smaller substrates 200, 100, 75, 50 &
25mm dia.
(iv) Adapter for rectangular substrates; 200x100, 180x140, 180x90, 100x75, 100x50
mm.
(v) The substrate holder should have easy mounting facility for substrate loading and
removing either manually from front door or through the load lock.
(vi) Substrate holder stage/sample manipulator should have the facility for continuous
rotation (max. planet speed ~ 75 rpm, central axis speed ~ 10 rpm).
(vii) Thickness monitors at the same horizontal plane as that of substrate.
(viii) Proper protection cover of rear side of all the substrates from scratch and coating.
(ix) Suitable substrate mask for achieving thickness uniformity if required.
(x) Motor suitably located and coupled to minimize vibration.
(xi) A clear layout drawing (side and top view) of the substrate holder fixture
(accommodating substrates of various sizes) including OTM, QTM and shutter
showing important dimensions to be provided along with technical bid.
* Manufacturer is free to design substrate rotation, substrate holding and substrate
masking arrangement subject to the condition that absolute thickness uniformity of
≤1% grown at a minimum deposition rate of 2Å/sec in each planet i.e. over 150mm
diameter substrate while maintaining planet-to-planet thickness uniformity ≤ 0.6%.
* Documentary evidence in support of these to be provided in the technical bid.
8. Sputter Ion Source, Neutralizer, power supply and controller (1 set):
I. Ion Source
(i)
The ion source should use filament less ionization for long operation; high
density plasma generated through RF / MW ECR.
(ii)
Ion source must be capable of sputtering metal, dielectrics and semiconductor.
(iii) Operating gas (1 – 50 sccm) for generation of ions must be inert viz., Ar, Xe
etc. However, the ion source should also be capable of operation in reactive
ambient using O2, N2. Separate MFC and gas lines for Ar/Xe. Gas flow 1-50
sccm, step 0.1sccm.
(iv) Sputtering layout geometry must be capable of depositing dense and smooth
films on 150 mm dia. substrate with absolute thickness uniformity ≤ 1%.
(v)
It should be capable of depositing multilayers of more than 100 layers; each
layer thickness 1 – 250 nm.
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(vi)
(vii)
(viii)
(ix)
(x)
(xi)
(xii)
Ion beam must be adequately focused on target, suitably distanced from target
so that impurities are not sputtered.
It should have three grid dished focussed grid system made of Mo / Ti. Either
no grid alignment or very easy grid alignment steps, for repeatable process
runs and longer grid lifetime.
* At least one grid refurbishment during warranty period.
Capacity of varying beam energy from 100 eV to 1500 eV and beam current
up to 700 mA, ≥ 650 mA at 1500 eV for 12 hours continuous operation. Ion
current profile at 650 mA @ ≥1200 eV to be provided in the technical bid.
* This has to be demonstrated during factory acceptance test
Beam diameter: 14-16 cm / suitable size for target (14” dia./ rectangular /
suitable)
Parameters of power supply of ion beam source
a. Dedicated high power RF (preferably 1kW) or MW (preferably 800W)
generator. RF/MW from reputed international manufacturer.
b. Beam power supply: 1.5 kV, ≥1 A
c. Accelerator power supply: 1.5 kV, > 50mA
d. Active stabilization of ion current and ion energy using a feedback loop,
arc counting facility and identification of increased forward and reflected
power levels (e.g. for identifying necessary grid, discharge vessel or
chamber cleaning).
e. Automatic matching network
The ion gun should have all modular and dedicated power supplies. The
parameter readings should be always available on display. Complete sputter
source integration to system control. All necessary safety interlocks.
Plasma chamber should be made of quartz / aluminium oxide ceramic or
similar material. Source housing must be of SS and/or Al. Modular assemblies for
easy serviceability.
(xiii) Water / air cooling of ion source during deposition. Ion source to be heated up
to ~70oC during venting using hot water flow. Safety interlocks.
(xiv) Direct flange mount on CF flange, RF/MW & DC electrical feed-throughs,
gas tubing feed-through, water feed-throughs, ion source supports, in vacuum
cables, etc.
(xv) Steady deposition rate control using a suitable feedback from thickness
monitor.
II. Neutralizer
(i)
The ion source should have a proper neutralizer for neutralization of the ion
beam based on RF or plasma bridge neutralization technique.
(ii)
Neutralizer mounted together with ion source in a non-immersed position
allowing operation for extended periods before maintenance.
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(iii)
Electron emission measured and controlled to assure charge neutrality on
substrate.
(iv)
Separate gas line and MFC for Neutraliser. Step 0.1sccm.
(v)
Neutraliser should operate with inert gases like Ar and Xe.
(vi)
Neutraliser housing made of SS and/or Al, long life electron emitter, angular
mounting bracket, modular neutralizer body construction, plug & unplug
neutralizer assembly.
(vii) Emission current: ≥ 900 mA.
(viii) The Neutraliser should have a power supply having manual, automatic and
remote operation mode. The parameter readings should be always available
on display.
(ix)
Electron emission controller: ≥ 2A, ≥ 120V DC, regulated emission current,
automatic controller integrated.
(x)
Remote angular mount with single CF flange feed-through, electrical feedthroughs & SS gas tubing feed-through, in-vacuum cables, electrical cables
etc.
III. Faraday Cup: Bakeable, Faraday cup with linear motion feed-through (~ 6”
travel) / angular movement feed-through and shielded UHV compatible cable /
feed-through assembly for ion and electron beam current measurements.
9.
Assist cum clean Ion source, neutralizer, power supply and controller (1 set):
The ion gun should be gridded, broad beam type suitable for ion assisted deposition for
optical coating. The broad specification of the ion gun is listed below. Ion beam properly
positioned and directed towards substrate and OTM test glass as required to grow 99.8%
dense film.
I. Ion source:
(i) The ion gun will be used for pre-cleaning of the substrate upto 250mm dia. before
deposition and ion assisted deposition for long duration.
(ii) Ion generation technology : Filamentless ionization using RF / MW ECR
(iii) Ion source must be capable of etching glass, dielectrics, semiconductor and metal
(iv) Beam Energy
: Variable in the range 100 eV to 1500 eV
(v) Gas compatibility
: O2, N2, Ar/Xe
(vi) Beam diameter
:12-14cm/suitable size for substrate (max.250mm
dia.)
(vii) Grid
: 3 grid, dished defocussed Mo / Ti.
* At least one grid refurbishment during warranty period
(viii) Beam current
: 50 – 500mA or more,
≥ 500mA for 12 hrs continuous operation.
* This has to be demonstrated during factory acceptance test
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(ix) Parameters of power supply of ion assist/etch source
a.
Dedicated high power RF (~ 1kW) or MW (~ 800W) generator. RF/MW from
reputed international manufacturer.
b.
Beam power supply: 1.5 kV, ≥1 A
c.
Accelerator power supply: 1.5 kV, ≥ 50 mA
d.
Active stabilization of ion current and ion energy, arc counting facility and
identification of increased forward and reflected power levels (e.g. for
identifying necessary grid, discharge vessel or chamber cleaning)
e. Automatic matching network
(x) Cooling : Radiative or water cooled during deposition. Ion source to be heated up
to ~70oC during venting using hot water flow. Safety interlocks.
(xi) Separate MFC and gas lines for O2, N2, Ar/Xe, gas flow 1-50 sccm, step 0.1sccm.
(xii) The ion gun should have all modular and dedicated power supply. The parameter
readings should be always available on display. Complete assist source
integration to system control. All necessary safety interlocks.
(xiii) Active stabilization of ion current and ion energy, arc counting circuit and
identification of increased forward and reflected power levels (e.g. for identifying
necessary grid, discharge vessel or chamber cleaning).
(xiv) Plasma chamber should be made of quartz / aluminium oxide ceramic or similar
material. Source housing must be of SS and/or Al. Modular assemblies for easy
serviceability.
(xv) Internal mount / flange mount through CF flange, MW/RF & DC electrical feedthroughs, gas tubing feed-through with VCR fitting, Ion source supports, in
vacuum cables, etc.
(xvi) Electro-pneumatic shutter for assist ion source.
II. Neutralizer
(i) The ion source should have a proper neutralizer for neutralization of the ion beam
based on RF / plasma bridge neutralization technique
(ii) Neutralizer mounted together with ion source in a non-immersed position
allowing operation for extended periods before maintenance.
(iii) Electron emission measured and controlled to assure charge neutrality on
substrate.
(iv) Separate gas line and MFC for the neutralizer. step 0.1sccm.
(v) Neutralizer should operate with inert gases like Ar and Xe.
(vi) Neutralizer housing made of and/or Al, long life electron emitter, angular
mounting bracket, modular neutralizer body construction, plug & unplug
neutralizer assembly.
(vii) Emission current : ≥ 900 mA.
(viii) The neutralizer should have a modular and dedicated power supply. The
parameter readings should be always available on display.
14
(ix) Electron emission controller: ≥ 2A, ≥ 120V DC, regulated emission current,
automatic controller integrated.
(x) Remote angular mount with single CF flange feed-through, electrical feedthroughs & SS gas tubing feed-through, in-vacuum cables, electrical cables etc.
10. Rotating target holder & Indexer (1 complete set)
(i)
Target holders having capacity of holding maximum 4 targets of size 14” dia /
suitable size as required to achieve required deposition rate and thickness
uniformity.
(ii)
Computer controlled 360o rotary motion drive via a suitable CF /suitable feedthrough for selecting targets and adjustment of ion incidence angle (average
incidence angle 45-50o)
(iii) Continuous oscillation by ±5o of angle while under vacuum during deposition
(iv) Target holder must have appropriate indexer.
(v)
Target rotation and indexing must be controlled by computer.
(vi) Two bonding plates for the targets should be provided with the equipment.
(x) Water cooling should be provided for bonding plates during sputtering, water
flow interlocked. Target holder to be heated up to ~70oC during venting using
hot water flow.
(vii) Contamination shields specifically for targets which are not in use.
Contamination shield to be made from very low sputter yield material. Ion
beam to be adequately focused to avoid any impurity sputtering. Suitable
design for easy cleaning.
11. Substrate shutter
Substrate holder should be provided with appropriate fast electro-pneumatic shutter.
(i) Mechanical shutters to protect the deposition on the substrate during conditioning
of the target and for the termination of deposition on the substrate.
(ii) Shutter must be electro-pneumatically operated and very fast operating.
(iii) Open & close position of the shutter must be visible in the software & control
panel.
(iv) Shape, size, speed and operation of the shutter shall prevent any deposition on the
substrates before it opens and after it closes.
(v) Shutter made from SS / Mo.
(vi) Strong, stable and smooth operation of shutter. Necessary spares.
(vii) Minimum vibration during opening and closing of substrate shutter.
(viii) All shutters shall be integrated to the main control system.
(ix) Adequate protection of components responsible for smooth and fast operation of
shutter from coating.
15
12. Crystal Thickness Controller (1No.) and quartz crystal sensor head (3 Nos.):
The crystal thickness controller should be of standard international make. Offer should
include one quartz crystal thickness controllers (IC/6). The controller will be used to
control the single and multi-layer deposition of thin films of metal, dielectric and
semiconductor and should have minimum of these features.
1. One rotary sensor head (RSH600 / BS-04) with 6 quartz crystals; complete with
water cooling lines, feed-throughs, fitted along with OTM test glass holder in a
single flange. Rotary sensor head and OTM test glass in same horizontal plane.
2. Two additional standard front load crystal sensor
heads complete of
perpendicular water cooling SS lines with all joints (water, air, vacuum) welded
from manufacturer, Leak tightness better than 1x10-9 mbar l/s. CF feed-throughs.
Positions may change in the design review stage.
3. Oscillators – 3 nos.
4. 100 nos. 6 MHz, alloy coated, AT-cut plano-convex quartz crystals and various
accessories.
Specifications:
a. Crystal monitor should be fully compatible to ion beam sputtering environment
involving DC, RF/MW fields with appropriate RF/EMI shielding and control
mechanisms.
b. Thickness and rate resolution
: better than 0.1Å.
c. Thickness accuracy
: better than 0.5%.
2
d. Mass resolution: 0.042 ng/cm .
e. Deposition rate accuracy: better than 0.0426 Å/s.
f. Deposition source control function : rate, thickness and rate derivatives.
g. Recording output display should give rate, thickness and rate deviation.
h. Source control voltage
: 0 to 10 V.
i. Fully programmable for automatic deposition of multilayers.
j. Interfaced to sputtering ion beam power supply for feedback control of deposition
rate at 2 +/- 0.02 Å/s.
k. Digital display of deposition rate, rate deviation, thickness, crystal life etc.
l. Automatic operation of deposition cycle with on/off IBS control.
m. Possibility of manual override of automatic cycle.
n. Programmable up to 50 processes with up to 200 layers each.
o. Memory for 32 complete material deposition parameters.
p. Frequency resolution +/ - 0.0035 Hz over 100 ms.
q. All quartz crystal thickness controllers must be integrated with the system
computer/ controller.
r. Thickness controller (IC/6) shall directly accept layer parameters from the
deposition process recipe menu and front panel.
16
s. PID control with automatic source controls: The controller should have
programming features as well as capabilities to act as an independent real-time
feedback process/deposition controller with multilayer programming options.
t. Leak tightness of complete crystal sensors better than 1x10-9mbar lit/s.
13. Optical thickness controller with test glass changer and indexer:
Optical thickness monitor (OTM) will be used for thickness monitoring and layer
termination of the thin film growth by monitoring the changes in transmission /
reflection spectra of the test sample / real sample in real time. OTM based on either
single wavelength monitoring or broadband monitoring shall be quoted. The optical
thickness controller should be standard module manufactured by a reputed company.
The optical thickness controller shall be integrated to the control system. Detailed
specifications of each type of OTM are given below.
Single wavelength monitoring:
a. Useful wavelength range: 230 nm to 1650 nm, operates in single wavelength
monitoring
b. Dual beam automated in situ optical monitoring system.
c. Sample beam in free space and reference beam through fibers for UV, VIS and IR
wavelengths. Separate fibers for UV-VIS and VIS-IR ranges.
d. Source Module: 4 phase chopped broadband source module including
collimation optics and mounting assembly. Must incorporate a deuterium lamp
and a halogen lamp. 12 mm dia. Beam, beam divergence ± 2 mrad, Spare bulbs (1
each).
e. UV Detector Module: Includes PMT detector for 230 to 800 nm selectable under
software control, Quartz collection optics, automated 6 position order sorting
filter wheel, wavelength calibration filter, A/D conversion and chamber mounting
assembly. pk-pk noise < 0.1%.
f. VIS-NIR Detector Module: Includes Peltier cooled Si/InGaAs detector for 550
to 1650 nm, selectable under software control, collection optics, automated 6
position order sorting filter wheel, wavelength calibration filter, A/D conversion
and chamber mounting assembly. Signal/noise ratio <0.1%, bandwidth 4.3nm, 0.5
nm step. 0.25 nm accuracy.
g. Switchable Mirror Block: Capable of mounting two detector modules at once on
a single feed-through port. Includes a switchable mirror system to allow
movement of the optical beam from one detector module to the other. Includes
vacuum feed-through, UV-VIS-IR cover glasses and UV-VIS-IR vacuum
windows.
h. Test Glass Changer: Carousel based system with 16 position test glass holder (~
150 mm) fitted on a single flange with double O-ring inserted from the top of the
17
i.
j.
k.
l.
m.
n.
o.
p.
q.
r.
s.
t.
u.
v.
w.
chamber, including UV-VIS-IR vacuum windows, dowels, fixtures for the
switchable mirror block and a six-position quartz crystal rotary sensor at the
centre of the substrate holder. Angle of incidence at test glass ≤ 8o w.r.t. normal.
System should be fully automated and integrated into the optical monitor via the
software.
Test glasses: Visible and UV test glasses: Both sides polished, 60-40S/D, 4-6
lambda/ 25 mm, parallelism 1arc min, qty. 100 each.
Interfaced to quartz crystal controller with thickness termination signal for
thickness control.
Quarter wave and non-quarter wave monitoring shall be possible in real
deposition runs.
Long term signal stability; typical +/- 0.25% in 12 hrs.
Wavelength scan after deposition of each layer shall be retrofitted in the main
deposition monitoring software. This shall be utilized for cut point error
compensation. User can analyze the layers that have been deposited so far to get a
better measurement of the exact refractive index and film thickness of each layer
that actually get deposited. Automatic redesign of the multilayer (live during the
run) for the subsequent layers so that the design can automatically adjust itself to
meet the target spectral performance that gets defined at the beginning. This shall
happen live during the actual run.
Thickness monitor should control optical thickness (quarter and non-quarter
wave) in transmission mode. Provision for reflection mode.
Layer termination should be based on quarter-wave or non-quarter-wave optical
thickness criterion and need to be decided by the user during multilayer recipe
preparation in programming.
Interfacing data entry with keypad and mouse.
Synchronisation Cables, Interface by USB or RS 232 C or equivalent.
Integration of OTM into PLC for deposition control and auto layer termination.
Dedicated PC: Industrial 19 inch Rack Mount Controller Module with Integrated
I/O Controller & Data Acquisition Electronics, detector selection, display monitor
screen, etc. License OS and other license software in media.
Pre-installed coating design, coating simulator, coating reviewer, deposition
monitoring and layer termination software and licenses. All in same Win7/latest
platform, free software update during warranty period.
Vacuum feed-throughs, vacuum windows, cover glass for both source and
detector modules. 1 set of spare vacuum window and cover glasses.
Position of optical vacuum feed-throughs will be finalized at the design review
stage.
18
Additional arrangements for Single wavelength monitor :
1. Additional flange : Including O-ring groove, mounting holes, UV-VIS-IR
window, dowel holes, mounting fixtures, and switchable mirror block for future
reflection / transmission measurement.
2. Arrangement to tap either transmitted and / or reflected beam to connect to a fiber
spectrophotometer.
Broadband Optical monitoring (BBOM)
a. Real online broadband optical monitoring and not a scanning device. Specially
configured spectrometers, to enable observation of the deposited thin film
spectrum in the selected wavelength range in real time.
b. Measurement performance shall allow superior thickness control as compared to
scanning monochromator based single wavelength monitor.
c. In situ transmission measurement in 230-1650 nm total wavelength range
d. Spectral halogen & D2 lamp 12 V/50 W, Integrated adjusting lamp, two spare
lamps to be supplied additionally, Beam spot size on the witness glass ~ 5 mm.
e. System for spectrally broad-band, triggered transmission measurement for
thickness control using rotating / fixed monitoring substrates.
f. VIS-NIR module: CCD 2048 pixels, Wavelength range: 380-1050 nm
Wavelength resolution: < 2 nm, Measurement error offset: <0.2%, Measurement
error noise: <1% peak-peak (for 100% curve at 650 nm), Integration time: 3 ms
(typical), SMA fiber connection, Digital I/O 16 each, Analog I/O 4 each.
g. DUV-extension of broadband optical monitor with D2-lamp: Wavelength range:
230-380 nm Wavelength resolution: 2 nm, Measurement error offset: <2%,
Measurement error noise: <1% peak-peak (for 100% curve at 350nm), Integration
time: 10 ms (typical).
h. IR-extension of broadband optical monitor, adapted optical beam path for
simultaneous DUV/VIS and IR measurements: CCD 512 pixels, Wavelength
range: 900-1700 nm, Wavelength resolution: ≤5 nm, Measurement error offset:
<2%, Measurement error noise: <1% peak-peak (for 100% curve at 1200 nm),
Integration time: 12 ms (typical).
i. Test glass changer: Interchanging of at least 6 substrates for optical monitoring to
deposit very thick coating stacks without venting process chamber in between,
changing mechanism located on the substrate palette, implementation of the
monitor glass changer in the system control and in the broadband optical
monitoring system, quartz crystal monitoring system CrystalSix sensor, other two
single quartz sensors in a conjugated location to the substrate palette.
j. Implementation of the broadband optical monitor in the PLC control for
automated coating fabrication, Transmittance vs. time plot at selectable
19
k.
l.
m.
n.
o.
p.
q.
r.
wavelength, re-optimization of residual layer stack based on saved spectra
available (optional).
BBOM Interfaced to quartz crystal controller with thickness termination signal for
thickness control.
Optical feed-through windows: 40 mm diameter / suitable.
Dedicated PC: Industrial 19 inch rack mount, controller module with integrated
I/O controller & data acquisition electronics, detector selection, display monitor
screen, etc. License OS and other license software in media.
Pre-installed multi-spectrum thin film software, coating design, coating simulator,
coating reviewer, deposition monitoring and layer termination software and
Licenses. All in same Win7/latest platform, free software update during warranty
period.
Wavelength scan facility with very low noise after deposition of each layer.
Transmission w/o test glass to be 100 +/- 0.2% noise and quartz (suprasil
3002/corning 7978) test glass shall be 93 +/- 0.2%.
Wavelength scanned and displayed continuously in real time, information
refreshment rate; Each revolution up to 120 rpm.
Long term signal stability to be specified (typical +/- 0.25% 12hrs.)
Test glasses: Visible and UV test glasses: Both sides polished, 60-40S/D, 4-6
lambda/ 25 mm, parallelism 1arc min, qty. 100 each.
Additional arrangements for broad band monitor:
1. Additional flange: Including O-ring groove, mounting holes, UV-VIS-IR window
and mounting fixtures for future broad band reflection measurement.
2. Arrangement to add single wavelength optical monitor, either in transmission or
reflection mode.
14. Venting and purging:
The systems must have the following:
a) The chamber must use dry nitrogen or argon for venting and purging. Particle and
moisture filter integrated. Soft venting option to be provided.
b) All purging must use a solenoid operated Swagelok ¼” VCR or equivalent shut off
valve for control.
c) The main nitrogen line must have a pressure regulator and a pressure switch to
indicate whether the pressure is below the system’s required set point or not.
15. Electrical power distribution requirements:
Power distribution panel shall distribute ~ 75A, 400 ± 5% volts AC, 3 phase, 50 Hz
power to all the system components, pumps, utility systems etc. Circuit breakers for
the system and all the sub-modules with additional fuses shall be provided.
20
a. Main Power must be configured as follows:
i) 400 ± 5% volts AC, 3 phase, 50 Hz, ~75A as the primary power.
ii) Max. power requirement during deposition and min. power during overnight
pumping shall be clearly specified.
iii) An on-line uninterruptible power supply [~ 3 kVA] (user supplied) for the PLC,
vacuum gauge controller, thickness controller, process computer and monitors for
at least 30 minutes, preferable 19” rack mountable and 2 V sealed maintenance
free batteries.
iv) An on-line UPS [~ 10 kVA] (user supplied) for the cryo-pump operation for at
least 30 minutes, 19” rack mountable.
b.The supplier shall provide necessary components for overload protection, fusing,
power components, power and control wiring, wire ways, transformers and enclosures.
c. System level digital I/O : +24 V DC and +5 V DC.
d. System level analog I/O: 0 - 10 V DC / 0 – 5 V DC.
e. Distribution board with separate fusing shall be provided for easy distribution of
power.
f. Emergency shutoff provision shall be available.
g. Body and/or earth point of each modules and sub-modules shall be directly connected
to a thick Cu block, which will be directly connected to a earth point. No ground loop.
h. The detailed circuit diagram of the entire system must be supplied at the design review
stage.
16. Control and automation:
A. Process control:
The control of entire system must be through PC. It may be either pure PC control
using industrial computer or PC interfaced PLC based system. All interfaces hardware
and software should interact on Win 7/ latest platform for automatic control of all
components with the possibility of manual override for operations essential for safety.
The system should have three operating level. Necessary software license for PLC.
Long life battery bank for PLC. All necessary cables.
i) Operator mode, ii) Manual mode & iii) Service mode
The process controller must allow the following operations:
Automatic pumping cycles to start up the system, switching the pumps, opening
the relative valves after subject to appropriate interlocks. Automatic system
shutdown, automatic valve control, automatic pressure control
Vacuum coating chamber pressure measurement and control using vacuum
instruments, gauges and MFCs
21
Temperature measurement and control in the vacuum chamber by using
thermocouples and heater.
Control of water flow channels, chamber heating during venting and cooling, etc.
Thin film deposition rate control by controlling ion-beam power supplies, MFCs
& gauges
Automatic procedure for plasma ignition and shutdown sequence for IBS and
IAD
Setting and control of IBS and IAD controller parameters
Control of thicknesses and deposition rate by quartz crystal and optical thickness
monitor
Control of substrate, target and test glass rotation
Programming of deposition processes (multilayer) with real time display of
process parameters. Recipe building tools.
Display of problems and alarms and management of alarms according to safe
procedures. All the safety interlocks shall be pre-programmed for operation
safety.
The access of setting and operating the parameters must be through key board,
mouse or touch-screen.
Status monitoring of various systems components
Graphical display of various parameters e.g. pressure and temperature during
pumpdown, pressure, temperature, deposition rate, thickness, gas flow, ion source
parameters etc during deposition.
Complete data saving of multilayer deposition run for future tracking
Custom system maintenance schedule- advanced warning of all needed
maintenance and service.
Error monitoring, logging and trend tracking.
Remote operation, servicing capability, etc.
Computer: Workstation computer, Win7/ latest professional operating software license,
latest processor, 8 GB RAM, 1 TB storage, display and network card, DVD/RW, flat
panel LED/LCD monitor / touch screen, keyboard, mouse. Separate PC & console for
OTM if required. Redundant storage in the same PC with complete automation software
installed.
B. Multilayer deposition control
The multilayer deposition and control software should have all the requisite capabilities
to develop customized multilayers as follows:
a) Input of multilayer recipe with a provision for programming 100 layers or more as
per the customized design.
22
b)
c)
Each individual layer in the recipe should be associated with user defined
parameters such as material (single or mixed), rate of deposition, layer thickness,
option of optical / physical thickness, layer termination using either turning point
or broadband transmission of layers, gas flow, ion-gun parameters, substrate
rotation, substrate heating, chamber pressure programming, etc.
The software should have option to alter the layer and process/deposition
parameters of the current layer or any of the subsequent layers without interrupting
the deposition.
17. Water distribution system:
A close cycle compact automatic water supply to the chamber body and door, IBS ionsource, IAD ion-source, pump & compressor, sputter targets, crystal monitors, flanges
with Viton ‘O’-rings and other Sub-Systems shall be provided. Flow switches at both
inlet & outlet shall be provided for above channels. Flow meter on the output side of each
channel to monitor flow rate and set alarm limits. Flow meter shall be programmable
with digital display. The maximum limit of each channel shall be as per the requirement
of that channel. All water flow channels shall be integrated to the main system control.
One spare channel with flow switches. Manual valves to control flow in each channel.
Manual valve in main inlet and main outlet. Corrosion stable materials shall be selected
for all closed water circuits. Quality of the required water shall be clearly specified.
Chiller shall be interfaced to the main control system.
18. Water based heating system for chamber walls:
A close cycle compact channel to flow warm ( ~ 70oC) water to the i) chamber body and
door, ii) target assembly and iii) ion sources during venting. Flow switches, manual valve
in main inlet and main outlet, manual valves to control flow in each channel, warm water
loop may use cooling water loop with appropriate automated switch over system, should
be integrated to the control system, warm water temperature control, chamber wall
temperature monitoring, interlock for chamber venting, corrosion resistant water lines
shall be provided, adequate provision for expansion/contraction channels and joints.
Corrosion stable materials shall be selected for all closed water circuits. Hot water shall
be interfaced to the main control system.
19. Supply of Sputtering Targets (Essential Requirement):*
For a smooth installation process and subsequent R&D programs, the following types
of ultra pure (99.99%) sputtering targets with appropriate bonding to withstand max.
ion energy & max. ion current for 12hrs continuous shall be provided.
Quantity: 1 each.
i. Tantalum (Ta) target, 99.99% pure, 14” dia. x 0.250” thick /suitable size,
bonded to copper backing plate 0.250” thick.
23
ii.
iii.
iv.
v.
vi.
vii.
Titanium (Ti) target, 99.99% pure, 14” dia. x 0.250” thick /suitable size, bonded
to copper backing plate 0.250” thick
Silicon (Si) target, 99.99% pure, 14” dia. x 0.250” thick /suitable size, bonded to
copper backing plate 0.250” thick
Silicon dioxide (SiO2) target, 99.99% pure, 14” dia. x 0.250” thick /suitable
size, bonded to copper backing plate 0.250” thick
Titanium oxide (TiO2) target, 99.99% pure, 14” dia. x 0.250” thick /suitable
size, bonded to copper backing plate 0.250” thick
Hafnium oxide (HfO2) target, 99.99% pure, 14” dia. x 0.250” thick /suitable
size, bonded to copper backing plate 0.250” thick
Tantalum pentoxide (Ta2O5) target, 99.99% pure, 14” dia. x 0.250” thick
/suitable size, bonded to copper backing plate 0.250” thick
* Manufacturer is free to decide target size and shape subject to the condition that absolute
thickness uniformity of ≤ 1% grown at a minimum deposition rate of 2Å/Sec in each planet
i.e. over 150 mm diameter substrate while maintaining planet-to-planet thickness
uniformity ≤ 0.6% can be achieved. Documentary evidence in support of these to be
provided in the technical bid.
20. Documentation along with supply of instrument:
The contractor must provide two copies of each of the following in English Language
i) Process and Instrument Diagram (P&ID) and chamber drawings (also loaded on the
personal computer (PC)).
ii) Prints on AutoCAD
iii) Electrical; (also loaded on the PC)
a) Total power required.
b) Voltages and power by type.
c) Point to point Schematics.
iv) Operating instructions (also loaded on the PC)
v) Nitrogen, Water, Air, & Vacuum schematics.
* Complete drawings of the system’s mechanical and electrical layout should be provided
while supplying the unit. Besides service manuals and complete circuit diagrams of the
individual sub-systems should also be provided at the time of the actual delivery.
21. List of spares
The contractor should provide all spares (including 3rd party units) for two years of
smooth operation of the plant. Following spares must be included in the supply.
(i)
Full range gauge 1 No. and Pirani gauge: 1 No.
(ii) One set of all metal gaskets and Viton ‘O’-rings / gaskets.
24
(iii)
(iv)
(v)
(vi)
(vii)
(viii)
(ix)
(x)
(xi)
(xii)
(xiii)
(xiv)
(xv)
One set of heating lamps, shield for lamps.
Spare parts kit for dry pump, cryo pump, cryo-compressor and He refilling line.
Spare motor for rotary drive and other necessary spares.
Spare MFC – 1no.
Spare backing plate for target – 2 nos.
Set of spare fuses for electrical distribution panel, all instruments etc.
Set of various types of relays and set of spares for PLC.
Mechanical toolkit for the complete system including special tools required.
One set of shutter plate, shutter actuator etc.
One set of electro-pneumatic valves and actuators.
One set of water flow switch & flow meter.
Set of selected vacuum and electrical components.
One set of spare grid for IBS and IAD each (accelerator, screen, decelerator,
insulators, etc.).
(xvi) One set of spares for IBS and IAD each (discharge chamber, RF antenna, antenna
insulator, gas isolator, other insulators, balls, nuts and bolts, connectors, water
break, fuses etc.).
(xvii) Two set of spares for neutralizers (refurbish kit, collectors, insulators, nuts and
bolts, connectors, etc.).
(xviii) OTM lamps and spares for OTM, spares for quartz thickness monitor.
* It is mandatory to quote all spare items as mentioned above. The rate for Spare
items to be quoted separately in the price bid and will be considered for cost
comparison.
22. Optional items
i) Turbo-molecular pump (~ 1000l/s), DN200CF, electro-pneumatic gate
valve, water cooling, splinter shield, power supply, operation mainly
during cryo-regeneration cycle, safety interlock.
ii) Chiller and hot water facility suitable for the entire system. Accurately
monitors and controls the temperature within 10C of set point. Total outlet
flow and pressure adequate to sufficiently provide cooling to all
subsystems, safety interlocks.
iii) Chilled water plant for IBS’s - DI water main outlet for
instrumentation, de-ionized and mechanically pure, filtered, chilled,
plastic tubing, safety interlocks, Conductivity meter for water circuit.
iv) High pressure RGA (1 – 100 amu) to actively control partial pressure
of reactive gases.
* It is mandatory to quote all optional items as mentioned above. The rate for
Optional items to be quoted separately in the price bid and will not be considered
for cost comparison.
25
III Terms and conditions:
1. SCOPE
This specification describes minimum technical requirements and minimum acceptable
performance standards for a very high vacuum Dual Ion-beam Sputter Deposition
system. The quantity of modules and sub-modules indicated in the tender are the
minimum. The offer should include all the modules and sub-modules of reputed make
and of high reliability factor. Hence, the make and model no. of each module and submodule must be mentioned in the technical as well as commercial offer. The multilayer
deposition system is a dual ion beam sputtering deposition system and is needed for
multilayer interference coatings of various materials (dielectric, metal, semiconductor,
etc.) in high vacuum on user specific insulating, semiconducting, and conducting
substrates such as glass, silicon, polymer, metals etc. The system is to be installed in a
clean room. The entire system must be fully automated with computer controls via menudriven software and should be highly user friendly.
2. PRE-QUALIFICATION CRITERIA OF THE BIDDER
Only manufacturers or authorized representatives who have earlier build both Ion Beam
sputtering and optical coating systems and who have the capability to design,
manufacture and test DIBSD optical coating systems are eligible to bid. The bidder
should meet the following criteria to qualify for the bid.
2.1. System shall conform with the essential EC or equivalent safety requirements.
2.2. The bidder should have experience and capacity in the field of DIBSD system
design, manufacturing, testing, installation and commissioning suitable for precise optics
and low loss optical coatings manufacturing.
2.3. The bidder should have made and commercially supplied at least two ion-beam
sputtering systems and two optical coating systems involving optical thickness
monitoring of similar design and capacity as in the tender specifications and must submit
documents in support of each of the above criterion. Copies of performance certificate
from customer for such systems to be submitted. Feedback from users of the previously
supplied systems may be used to evaluate the suitability of the bids.
2.4. The bidder shall confirm their capability to provide spares, maintenance, and after
sales service of the DIBSD system including all third party items after erection &
commissioning, during and after the warranty period, either directly or through
authorized service representatives in India. Copies of maintenance certificate from
customer for such systems to be submitted.
2.5. The bidders shall confirm that they have / shall arrange necessary characterization
facilities to carry out all the tests (surface roughness, ellipsometry, thickness uniformity
and spectrophotometer) as mentioned in factory acceptance criteria at no extra cost.
26
2.6. The bidders shall confirm their capability to manufacture Class 10000 / ISO7
cleanroom compatible system.
3. SPECIFICATIONS:
(A) Offers must be strictly as per our specifications. Merely copying tender specifications
in the technical bid shall not qualify the parties for price bid. A quotation has to be
supported with the printed technical leaflet/ literature of the quoted model of the item by
the quoting party/manufacturer and the specifications mentioned in the quotation must be
reflected/supported by the printed technical leaflet/literature. Therefore the model quoted
invariably be highlighted in the leaflet/literature enclosed with the quotation. Noncompliance of the above shall be treated as incomplete/ambiguous and the offer can be
ignored without giving an opportunity for clarification/negotiation etc. to the quoting
party. Make/ models of all sub components including pumps, gate valves, gauges, ion
sources and process control gadgets (mass flow controllers, thickness monitors,
capacitance gauges, etc.) shall be mentioned.
(B) The technical bid shall be evaluated for acceptability by the technical committee and
may call the bidders for discussion.
(C) Technical quotation from the possible suppliers should contain a sufficiently detailed
schematic layout of the proposed coating system along with dimensions. Actual
specifications should also be mentioned for all the utility system required.
(D) It is mandatory to quote all optional items as mentioned in section II – 22. Optional
items to be quoted separately and will not be considered for cost comparison.
4. COMPLIANCE STATEMENTS:
(A) Bidders must furnish a Compliance Statement for each and every required
specification of the tender in the format attached. The deviations, if any, from the
tendered specifications should be clearly brought out in the statement. Technical
literature/leaflet showing the compliance of the specification shall also be attached
with the quotation.
(B) Similarly, the Compliance Statement for Terms & Conditions of the tender shall be
furnished, as per the enclosed format.
(C) It is mandatory to submit the compliance statement signed in original ink along with
their technical specifications, failing which their offer may not be considered.
5. VALIDITY OF OFFER : The prices must be valid at least for a period of 120 days
from the date of opening of the Tender. No changes in prices will be acceptable in any
condition after opening of tender.
6. PAGE NUMBERING & SIGNATURES: Your offer should be a page numbered and
signed by an authorized signatory giving his/her name and designation below the
signatures. Only original offers signed in ink will be accepted. No scanned / electronic
copy will be accepted.
27
7. PRE-DISPATCH FACTORY ACCEPTANCE TRIALS: Pre-dispatch inspection will
be performed by purchaser’s representatives at the manufacturer’s site and final
acceptance will be at purchaser’s site after the system has been assembled and tested. The
following tests will be performed at manufacturer facilities and will constitute the first
acceptance test; same tests also to be performed at the customer’s facilities after
installation and will constitute the final acceptance test and the completion of the
acceptance test.
1) Helium leak testing of the entire vacuum system to <1x10-9 mbar l/s and also for cryo
pump He line.
2) The process chamber will be demonstrated to pump down to an ultimate pressure of
5x10-8 mbar at room temperature in about 12 hours using an appropriate pumping and
baking procedure after venting with dry N2 at atmospheric pressure.
3) The process chamber will be demonstrated to pump down to an ultimate pressure of
5x10-7 mbar at 150°C in about 3 hours using an appropriate pumping and baking
procedure after venting with dry N2 at atmospheric pressure.
4) The temperature of the substrate will be demonstrated to reach 350oC ± 2oC at max.
substrate rotation.
5) Operation of the vacuum and deposition cycles of the system will be demonstrated with
the deposition of several multilayer coatings.
* Process: The demonstration samples shall be loaded such that both across each planet
planet to planet distribution can be measured.
* Multilayer deposition: Deposition at the rate of 2Å/s and absolute thickness
uniformity of 1% over 150 mm dia. substrates for the following designs:
1.
{[0.9H1.1L]^10 H}, where, H- one quarter-wave layer of Ta2O5, L-SiO2 @
1064nm.
2.
{1.04[(HL)^2H]8.32L 1.04[(HL)^2H]L 0.96[(HL)^2]3.84H 0.96[(HL)^2]},
where, H-Ta2O5 and L-SiO2 @ 633 nm.
6) Absolute thickness uniformity of deposited layers will be ≤ 1% over 150 mm diameter
substrate and planet to planet thickness uniformity ≤ 0.6% while maintaining deposition
rates ≥ 2 Å/s for all materials.
* Reliability test: A reliability test shall be performed in a single run with alternating
layers from the above without interruption involving maximum no. of instruments.
* Characterizations: i) Surface roughness and ellipsometry measurement on single layer
Ta2O5, and SiO2 films, ii) thickness uniformity measurement and iii) vacuum to
atmosphere moisture shift ≤ 0.2% utilizing in-situ optical thickness monitor and ex-situ
spectrophotometer.
* Manufacturer shall arrange all the above characterization and clearly state the no. of
working days required to complete all the acceptance tests. All these characterization
facilities will be made available at RRCAT during the final acceptance test.
28
8. PACKAGING: The system should be packed in suitable, dust and water proof,
“Shipment-ready” box pallet with shock sensors of suitable rating attached external and
internal to the box. All heavy and tall components shall be bolted on thick base. All
components with wheels/rollers shall be immobilized. All third party items in OEM pack
only. No gap shall be left within any container/wooden box. For any damage due to
improper packing, supplier shall be responsible. Details of the package such as
approximate size, weight, rating of shock sensors etc. should be mentioned in the bill of
lading. Package should be such that it can be loaded into a standard shipping container.
Max. Instrument height during shipment should be < 1.95 m and max. Instrument
width preferably < 2 m.
9. ON-SITE (RRCAT) INSTALLATION AND COMMISSIONING: The supplier
should install, test & commission the DIBSD system at RRCAT site immediately but in
any case within one month after receipt of the item. The site preparation will be done by
RRCAT as per requirements in the site preparation & utilities document provided by the
supplier. The inspection of complete system as per specifications shall be conducted at
RRCAT after installation & commissioning of the machine to the satisfaction of our
technical expert/Scientific Officer who will test the performance of the equipment. All
the above tests as mentioned in point no. 7 (T & C) shall be repeated. All the
characterization facilities required will be made available at RRCAT during the final
acceptance test.
10. TRIALS AND TRAINING AT SITE (RRCAT): After installation & commissioning
of the system at site, the supplier shall provide training at site to RRCAT personnel for a
week, in automated operation of the system, manual operation of the system, optics
loading, deposition recipe creation, automatic deposition, optics unloading etc. Training
shall include preventive maintenance, calibration on a day-to-day basis, replacement of
wear parts and general trouble shooting. Travelling expenses, local hospitality of
manufacturer’s personnel including lodging & boarding shall be borne by the
manufacturer.
11. COMMENCEMENT OF WARRANTY PERIOD: The warranty period of each and
every item shall commence from the date of receipt of the item in good working
condition and satisfactory installation/commissioning/demonstration at the site in
RRCAT, Indore. The warranty period and validity of Performance Bank Guarantee shall
be extended for the period of delay in satisfactory installation and delay in warranty
services.
12. WARANTEE: The entire machine inclusive of all systems, accessories, third party items
must be guaranteed / warranted for a period of at least two years, from the date of its
satisfactory installation/commissioning against all design, material and manufacturing
defects. If the equipment is found defective during this period the whole equipment or
part thereof will have to be replaced / repaired by the supplier free of cost at RRCAT.
However, if the items are guaranteed for a period of more than two years, it shall be
29
specifically mentioned in the quotation. Any malfunctions or breakdowns shall be
attended to by qualified engineer within 7 days. If the total period of time for which the
machine was not operational exceeds 30 days in a single stretch the warranty period shall
be extended by the same period of time. Manufacturer should guarantee post sale
technical service & spares for smooth operation of the machine for 5 years duration from
the date of final acceptance of the machine at RRCAT site.
13. AFTER SALES SERVICES: It should be clearly mentioned in the quotation whether
the after sales services during and after the completion of warranty shall be provided
directly by the supplier or their authorized agent/representative. Terms of the after sales
services, if any, may be mentioned in the offer. However, in both the cases the original
supplier shall be responsible for poor performance/services.
14. SPARE PARTS: Availability of spare parts of the equipment/instrument must be
guaranteed for a period of at least 5 years from the date of supply.
15. EVALUATION PROCESS: The offers will be evaluated based on the following;
a. Detailed technical specifications submitted by the vendor against tender specs and
terms & conditions.
b. Prompt and clear response to the technical queries raised by the user. In case response
is not received / not clear against technical enquiry the offer will be treated as rejected on
technical ground.
d. The purchaser reserves the right to obtain feedback from customers, to whom similar
systems were supplied earlier, prior to finalization of the order.
e. The purchaser reserves the right to visit the supplier’s site for evaluation prior to
finalization of the order. A team of RRCAT representative may inspect the facilities of
manufacturers. The inspection report of the above team would be considered for final
technical screening of the offers.
16. ANNUAL MAINTENANCE CHARGES: The party must mention in the quotation
(price bid), the rate/amount of annual maintenance charges, after expiry of the warranty
period of two years. The supplier should mention the cost of service contract on parts
and labor. This is mandatory to mention.
17. AUTHORIZATION OF INDIAN AGENTS & INDIAN REPRESENTATIVE:
a) In case there is involvement of an /Indian agent/representative in any form as
mentioned at (b) below, an authority letter / copy of agreement from the principal
manufacturer must be submitted along with the quotation (technical bid).
b) Where quoting party/Indian representative claims to be the subsidiary or branch
office or an authorized representative of the principal foreign manufacturer/supplier
in India, then a copy of approval from competent authority for operating business in
India as Subsidiary/Branch/Liaison office or Joint-Venture may be submitted along
with offer.
30
18. DESIGN REVIEW:
On subsequent of acceptance of purchase order, the contractor shall provide
1) All technical details, design basis report and detailed drawing of the proposed system.
Complete drawings of the system’s mechanical and electrical layout should be
provided.
2) Tentative schedule of fabrication, testing of subsystems, integration and acceptance
tests.
3) Supplier should provide above details within six weeks after the receipt of the
purchase order.
4) The design will be reviewed by an expert committee of the purchases and approval
for fabrication will be given within three weeks.
5) Contractor shall begin the fabrication of the proposed system only after the approval
of design by the purchaser’s expert committee. Regular communication and
coordination has to be made with the purchases during the manufacturing stage.
6) The detailed features of the automation software should be made available to the
purchaser well before the 1st acceptance test stage, so that expert committee can study
and suggest some additional features if required.
7) The supplier shall commit maintenance and service support of all 3rd party items
incorporated in the system for three years after the warranty is over.
19. The site preparation details e.g. floor plan of the whole system, electrical distribution
lines, water and gas lines should be sent along with the above details so that necessary
arrangements can be made in the clean room.
20. RELIABILITY AND EASE OF MAINTENANCE:
Components vendor selection has to be made with the priority given to reliability of the
components and responsive field service. Prompt field service of the vacuum pumps, ion
guns and OTM has to be arranged. Attempts should be made to place purchaser features
in static, no maintenance situations or to design very rapid replacement. Non standard
components when a maintenance item, should be included in the spares kit and are
priority items in factory inventory so that rapid response is assured. A full tool kit has to
be supplied with the system. The contractor should provide all spares (including 3rd party
units) for two years of smooth operation of the plant. If any hardware/software becomes
obsolete or is not available for the system operation the contractor has to provide free
support / source code for the smooth operation of the system.
31
IV- Compliance chart
S.
N.
Name of specifications/
part/Accessories of tender enquiry
1
I. Highlights of the equipment
(i)
(ii)
(iii)
(iv)
(v)
(vi)
(vii)
(viii)
(ix)
(x)
(xi)
(xii)
II. Specification of Modules
1. Vacuum chamber.
I. Deposition process chamber
II. Pumping stack
A.
B.
C. i., ii., iii., iv.
* Documentary evidence for arriving at
the pumping speed.
* A clear and labeled vacuum process
flow diagram.
*Maintenance contract for three years
2
quoted Compliance Deviation, if any, to
Whether
be
indicated
in
“YES”
or unambiguous terms
“NO”
Specifications of
Model/Item
32
Whether the
compliance/deviation
is clearly mentioned
in technical leaflet/
literature
after the expiry of warranty for cryoand dry pumps.
2. Frame
(i)
(ii)
3. Valving
(i)
(ii)
(iii)
(iv)
(v)
(vi)
4. Automatic Pressure controller and
vacuum gauge heads
A. Automatic Process controller
B. Gauge heads
i) Pirani
ii) Capacitance manometer
iii) High vacuum gauge head
a) Full gauge control with
magnetic shielding
b) Full range pirani/BayardAlpert
5. Process Gas handling
A. Mass Flow controller
(i)
(ii)
(iii)
(iv)
(v)
(vi) gas flow diagram of MFC’s
(a), (b), (c), (d), (e), (f)
33
6. Substrate heating
(i)
(ii)
(iii)
(iv)
(v)
(vi)
(vii)
(viii)
7. Substrate holder /sample
manipulator
(i)
(ii)
(iii)
(iv)
(v)
(vi)
(vii)
(viii)
(ix)
(x)
(xi)
* Documentary evidence in support of
absolute thickness uniformity of ≤1%
grown at a minimum deposition rate of
2Å/sec in each planet i.e. over 150mm
diameter substrate while maintaining
planet-to-planet thickness uniformity ≤
0.6%.
34
8. Sputter ion source
I. Ion source
(i)
(ii)
(iii)
(iv)
(v)
(vi)
(vii)
(viii)
* This has to be demonstrated during
factory acceptance test
(ix)
(x) a., b., c., d., e.
(xi)
(xii)
(xiii)
(xiv)
(xv)
II. Neutralizer
(i)
(ii)
(iii)
(iv)
(v)
(vi)
(vii)
(viii)
(ix)
(x)
III. Faraday Cup
9. Assist cum clean ion source
I. ion source
35
(i)
(ii)
(iii)
(iv)
(v)
(vi)
(vii)
(viii)
* This has to be demonstrated during
factory acceptance test
(ix) a., b., c., d., e.
(x)
(xi)
(xii)
(xiii)
(xiv)
(xv)
(xvi)
II. Neutralizer
(i)
(ii)
(iii)
(iv)
(v)
(vi)
(vii)
(viii)
(ix)
(x)
10. Rotating target holder & indexer
(i)
(ii)
(iii)
36
(iv)
(v)
(vi)
(vii)
11. Substrate shutter
(i)
(ii)
(iii)
(iv)
(v)
(vi)
(vii)
(viii)
(ix)
12. Crystal thickness controller &
quartz crystal sensor head
1.
2.
3.
4.
Specifications
a., b, c, ….. t
13. Optical thickness controller with
test glass changer and indexer
Single wavelength monitoring
a., b., c., ….. w.
Additional arrangement : 1., 2.
OR
Broad band optical thickness
monitor
a., b., c.,….. r.
Additional arrangement : 1., 2.
37
14. Venting and purging
a.
b.
c.
15. Electrical power distribution
a. Main Power
i)
ii)
iii)
iv)
b.
c.
d.
e.
f.
g.
h.
16. Control and automation
a. Process control: i), ii), iii)
Computer:
b. Multilayer deposition control
a), b), c)
17. Water distribution system
18. Water based heating system
19. Supply of sputtering targets
(i)
(ii)
(iii)
(iv)
(v)
(vi)
(vii)
38
* Manufacturer is free to decide target
size and shape subject to the condition
that absolute thickness uniformity of ≤
1% grown at a minimum deposition rate
of 2Å/Sec in each planet i.e. over 150
mm
diameter
substrate
while
maintaining planet-to-planet thickness
uniformity ≤ 0.6% can be achieved.
Documentary evidence in support of
these to be provided in the technical
bid.
20. Documentation
i)
ii)
iii) a, b, c
iv)
v)
21. List of spares
(i) , (ii), (iii), ………. (xviii)
22. Optional items
(i), (ii), (iii), (iv)
III Terms and Conditions
1. Scope
2. Pre-qualification criteria of the
bidder
2.1
2.2
2.3
2.4
2.5
2.6
39
3. Specifications
(A)
(B)
(C)
(D)
4. Compliance statement
(A)
(B)
(C)
5. Validity of offer
6. Page numbering and signature
7.Pre-despatch factory acceptance
trials
1, 2, 3, 4, 5, 6
8. Packaging
9.
On-site
installation
&
commissioning
10. Trials & training at site (RRCAT)
11. Commencement of warranty
period
12. Warranty
13. After sales service
14. Spare parts
16. Annual maintenance
17. Authorization of Indian agents
20. Reliability & maintenance
40
41