STGB30H60DFB,
STGP30H60DFB
Trench gate field-stop IGBT, HB series
600 V, 30 A high speed
Datasheet - production data
Features
7$%
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
7$%
• Minimized tail current
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
'3$.
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
72
• Very fast soft recovery antiparallel diode
Applications
Figure 1. Internal schematic diagram
C (2, TAB)
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
G (1)
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGB30H60DFB
GB30H60DFB
D2PAK
Tape and reel
STGP30H60DFB
GP30H60DFB
TO-220
Tube
October 2015
This is information on a product in full production.
DocID026677 Rev 2
1/21
www.st.com
21
Contents
STGB30H60DFB, STGP30H60DFB
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1
D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2
TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
DocID026677 Rev 2
STGB30H60DFB, STGP30H60DFB
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
60
A
IC
Continuous collector current at TC = 100 °C
30
A
Pulsed collector current
120
A
IF
Continuous forward current at TC = 25 °C
60
A
IF
VCES
ICP(1)
Parameter
Continuous forward current at TC = 100 °C
30
A
IFP(1)
Pulsed forward current
120
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
260
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
TJ
1. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.58
°C/W
RthJC
Thermal resistance junction-case diode
2.08
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID026677 Rev 2
3/21
Electrical characteristics
2
STGB30H60DFB, STGP30H60DFB
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VGE = 15 V, IC = 30 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 30 A
TJ = 175 °C
Forward on-voltage
2
IF = 30 A; TJ = 175 °C
1.6
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
V
1.75
1.7
Gate threshold voltage
2
1.65
IF = 30 A; TJ = 125 °C
VGE(th)
Unit
V
1.55
IF = 30 A
VF
Max.
600
VGE = 15 V, IC = 30 A
VCE(sat)
Typ.
5
6
2.6
V
7
V
VCE = 600 V
25
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/21
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 520 V, IC = 30 A,
VGE = 15 V, see Figure 29
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID026677 Rev 2
Min.
Typ.
Max.
Unit
-
3659
-
pF
-
101
-
pF
-
76
-
pF
-
149
-
nC
-
25
-
nC
-
62
-
nC
STGB30H60DFB, STGP30H60DFB
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
37
-
ns
Current rise time
-
14.6
-
ns
-
1643
-
A/µs
146
-
ns
-
23
-
ns
Turn-on current slope
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
see Figure 28
Turn-off delay time
Current fall time
Eon
Turn-on switching losses
-
383
-
µJ
Eoff(1)
Turn-off switching losses
-
293
-
µJ
Total switching losses
-
676
-
µJ
Turn-on delay time
-
35
-
ns
Current rise time
-
16.1
-
ns
Turn-on current slope
-
1496
-
A/µs
-
158
-
ns
-
65
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
Turn-off delay time
Current fall time
Eon
Turn-on switching losses
-
794
-
µJ
Eoff(1)
Turn-off switching losses
-
572
-
µJ
Total switching losses
-
1366
-
µJ
Ets
1. Turn-off losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
53
-
ns
-
384
-
nC
-
14.5
-
A
-
788
-
A/µs
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
104
-
µJ
trr
Reverse recovery time
-
104
-
ns
Qrr
Reverse recovery charge
-
1352
-
nC
Irrm
Reverse recovery current
-
26
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
310
-
A/µs
Err
Reverse recovery energy
-
407
-
µJ
IF = 30 A, VR = 400 V,
di/dt=1000 A/µs,
VGE = 15 V,
(see Figure 28)
IF = 30 A, VR = 400 V,
di/dt=1000 A/µs,
VGE = 15 V,
TJ = 175 °C, (see Figure 28)
DocID026677 Rev 2
5/21
Electrical characteristics
2.1
STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curve)
Figure 2. Power dissipation vs. case
temperature
GIPG280120141353FSR
Ptot
(W)
Figure 3. Collector current vs. case temperature
GIPG280120141346FSR
IC
(A)
60
250
200
40
150
100
20
50
VGE ≥ 15V, TJ ≤ 175 °C
0
0
25
50
VGE ≥ 15V, TJ ≤ 175 °C
0
0
75 100 125 150 175 TC(°C)
Figure 4. Output characteristics (TJ = 25°C)
GIPG280120141156FSR
IC
(A)
VGE =15 V
80
60
40
40
20
20
2
13V
3
4
0
0
VCE(V)
Figure 6. VCE(sat) vs. junction temperature
GIPG280120141440FSR
VGE= 15V
11V
9V
80
60
VCE(sat)
(V)
GIPG280120141206FSR
IC
(A)
VGE =15 V
9V
TC(°C)
Figure 5. Output characteristics (TJ = 175°C)
100
11V
1
75 100 125 150
50
13V
100
0
0
25
7V
2
1
3
4
VCE(V)
Figure 7. VCE(sat) vs. collector current
VCE(sat)
(V)
GIPG280120141446FSR
VGE= 15V
2.4
2.2
IC= 60A
2.2
2.0
TJ= 175°C
2.0
1.8
1.8
TJ= 25°C
IC= 30A
1.6
1.6
1.4
IC= 15A
1.2
-50
6/21
0
50
100
150 TJ(°C)
TJ= -40°C
1.4
1.2
0
DocID026677 Rev 2
30
45
60
IC(A)
STGB30H60DFB, STGP30H60DFB
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
GIPG280120141713FSR
Ic [A]
Figure 9. Forward bias safe operating area
GIPG090720141330FSR
IC
(A)
Vce(sat) limit
60
Tc=80°C
100
50
Tc=100 °C
40
10 μs
10
100 μs
30
1 ms
20
1
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG= 10 Ω,
VGE = 0/15 V, TJ =175°C)
10
0
1
(single pulse TC = 25°C,
TJ ≤ 175°C; VGE=15V)
f [kHz]
10
Figure 10. Transfer characteristics
IC
(A)
GIPG280120141330FSR
0.1
1
10
100
VCE(V)
Figure 11. Diode VF vs. forward current
GIPG090720141349FSR
VF (V)
Tj= 25 °C
2.8
Tj= 175 °C
100
TJ= -40°C
VCE =10 V
2.4
80
TJ= 25°C
2
60
40
1.6
20
1.2
0
7
9
13
11
0.8
10
VGE(V)
Figure 12. Normalized VGE(th) vs junction
temperature
AM16060v1
VGE(th)
(norm)
TJ= 175°C
20
30
40
50
60
IF(A)
Figure 13. Normalized V(BR)CES vs. junction
temperature
AM16059v2
V(BR)CES
(norm)
VCE= VGE
IC= 1mA
1.1
IC= 2mA
1.0
0.9
1.0
0.8
0.7
0.6
-50
0
50
100
150
TJ(°C)
DocID026677 Rev 2
0.9
-50
0
50
100
150
TJ(°C)
7/21
Electrical characteristics
STGB30H60DFB, STGP30H60DFB
Figure 14. Capacitance variation
Figure 15. Gate charge vs. gate-emitter voltage
GIPG090720141358FSR
C
(pF)
VGE
(V)
16
Cies
GIPG280120141455FSR
VCC= 520V, IC= 30A
IG= 1mA
14
1000
12
10
8
6
100
4
Coes
Cres
10
0.1
1
100
10
0
0
VCE(V)
Figure 16. Switching loss vs collector current
E
(μJ)
2
GIPG090720141414FSR
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C
120
160
Qg(nC)
Figure 17. Switching loss vs gate resistance
GIPG090720141421FSR
E
(μJ)
1420
1600
80
40
VCC = 400 V, VGE = 15 V,
IC = 30 A, TJ = 175 °C
1220
EON
1020
1200
EON
820
800
EOFF
620
EOFF
420
400
220
0
0
10
20
30
50
40
60
Figure 18. Switching loss vs temperature
E
(μJ)
800
20
3
IC(A)
E
(μJ)
VCC= 400V, VGE= 15V,
RG= 10Ω, IC= 30A
24
31
38
RG(Ω)
GIPG090720141440FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 30A
1600
EON
EON
1200
EOFF
400
EOFF
800
200
8/21
17
Figure 19. Switching loss vs collector-emitter
voltage
GIPG090720141431FSR
600
0
20
10
400
60
100
140
TJ(°C)
DocID026677 Rev 2
0
150
250
350
450
VCE(V)
STGB30H60DFB, STGP30H60DFB
Electrical characteristics
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
t
(ns)
GIPG100720141533FSR
t
(ns)
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
GIPG100720141549FSR
TJ= 175°C, VGE= 15V,
IC= 30A, VCC= 400V
tdoff
tdoff
100
tf
tdon
100
tdon
10
tf
tr
tr
1
0
10
20
30
IC(A)
50
40
Figure 22. Reverse recovery current vs. diode
current slope
Irm
(A)
10
0
20
RG(Ω)
40
30
Figure 23. Reverse recovery time vs. diode
current slope
GIPG100720141607FSR
GIPG110720140846FSR
trr
(ns)
IF = 60A, Vr = 400V
IF = 30A, Vr = 400V
200
TJ =175°C
60
10
150
40
TJ =175°C
100
20
0
0
TJ =25°C
500
0
0
1000 1500 2000 2500 di/dt(A/μs)
Figure 24. Reverse recovery charge vs. diode
current slope
Qrr
(nC)
50
Err
(μJ)
IF = 30A, Vr = 400V
2000
1000 1500 2000
di/dt(A/μs)
Figure 25. Reverse recovery energy vs. diode
current slope
GIPG110720140854FSR
TJ =175°C
TJ =25°C
500
GIPG110720140859FSR
IF = 30A, Vr = 400V
1000
TJ =175°C
800
1500
600
TJ =25°C
1000
400
500
0
0
200
500
1000 1500 2000
di/dt(A/μs)
DocID026677 Rev 2
0
0
TJ =25°C
500
1000 1500 2000
di/dt(A/μs)
9/21
Electrical characteristics
STGB30H60DFB, STGP30H60DFB
Figure 26. Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
10/21
-4
10
-3
10
DocID026677 Rev 2
-2
10
-1
10
tp (s)
STGB30H60DFB, STGP30H60DFB
Electrical characteristics
Figure 27. Thermal impedance for diode
DocID026677 Rev 2
11/21
Test circuits
3
STGB30H60DFB, STGP30H60DFB
Test circuits
Figure 28. Test circuit for inductive load
switching
Figure 29. Gate charge test
k
k
k
k
k
k
AM01504v1
Figure 30. Switching waveform
AM01505v1
Figure 31. Diode reverse recovery waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ts
tf
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
VRRM
Tf
Toff
dv/dt
AM01506v1
12/21
DocID026677 Rev 2
AM01507v1
STGB30H60DFB, STGP30H60DFB
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
D2PAK package information
Figure 32. D²PAK (TO-263) type A package outline
DocID026677 Rev 2
13/21
Package information
STGB30H60DFB, STGP30H60DFB
Table 8. D²PAK (TO-263) type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
14/21
Max.
0.4
0°
8°
DocID026677 Rev 2
STGB30H60DFB, STGP30H60DFB
Package information
Figure 33. D²PAK recommended footprint(a)
)RRWSULQW
a. All dimension are in millimeters
DocID026677 Rev 2
15/21
Package information
4.2
STGB30H60DFB, STGP30H60DFB
TO-220 package information
Figure 34. TO-220 type A package outline
BW\SH$B5HYB7
16/21
DocID026677 Rev 2
STGB30H60DFB, STGP30H60DFB
Package information
Table 9. TO-220 type A package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID026677 Rev 2
17/21
Packing information
5
STGB30H60DFB, STGP30H60DFB
Packing information
Figure 35. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
18/21
DocID026677 Rev 2
STGB30H60DFB, STGP30H60DFB
Packing information
Figure 36. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 10. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID026677 Rev 2
Min.
Max.
330
13.2
26.4
30.4
19/21
Revision history
6
STGB30H60DFB, STGP30H60DFB
Revision history
Table 11. Document revision history
20/21
Date
Revision
Changes
07-Aug-2014
1
Initial release.
28-Oct-2015
2
Updated Figure 23 and Section 5.
Minor text changes.
DocID026677 Rev 2
STGB30H60DFB, STGP30H60DFB
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DocID026677 Rev 2
21/21