SUM110N08-07P
Vishay Siliconix
N-Channel 75 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
Qg (Typ.)
75
0.007 at VGS = 10 V
110d
69
• TrenchFET® Power MOSFETS
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous Rectification
TO-263
D
G
D S
G
Top View
S
N-Channel MOSFET
Ordering Information: SUM110N08-07P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
75
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
IDM
Pulsed Drain Current
Avalanche Current
a
L = 0.1 mH
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25 °Cc
Operating Junction and Storage Temperature Range
V
110d
103
180
IAS
50
EAS
125
PD
Unit
208.3b
3.75
A
mJ
W
TJ, Tstg
- 55 to 150
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
40
Junction-to-Case (Drain)
RthJC
0.6
°C/W
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 68637
S12-1616-Rev. B, 09-Jul-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110N08-07P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
75
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
ID(on)
RDS(on)
4.5
± 250
VDS = 75 V, VGS = 0 V
1
VDS = 75 V, VGS = 0 V, TJ = 125 °C
50
VDS = 75 V, VGS = 0 V, TJ = 150 °C
250
VDS 10 V, VGS = 10 V
70
nA
µA
A
VGS = 10 V, ID = 20 A
0.0057
0.0070
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.0092
0.0112
VDS = 15 V, ID = 20 A
43
gfs
V

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
230
Total Gate Chargec
Qg
69
Gate-Source
Chargec
Gate-Drain Chargec
VGS = 0 V, VDS = 30 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 50 A
Qgd
c
td(on)
c
td(off)
Turn-On Delay Time
Rise Timec
tr
Fall Timec
pF
580
105
nC
23
21
Rg
Gate Resistance
Turn-Off Delay Time
Qgs
4250
f = 1 MHz
VDD = 30 V, RL = 0.6 
ID  50 A, VGEN = 10 V, Rg = 1 
tf
Source-Drain Diode Ratings and Characteristics TC = 25 °C
1.2
2.4
17
30
5
10
22
40
6
15
IS
110
ISM
180
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 20 A, VGS = 0 V
trr
IRM(REC)
ns
b
Pulsed Current
Continuous Current

IF = 75 A, dI/dt = 100 A/µs
Qrr
A
0.83
1.5
V
65
100
ns
2.5
5
A
85
150
nC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68637
S12-1616-Rev. B, 09-Jul-12
For technical questions, contact: [email protected]
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110N08-07P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
180
180
VGS = 10 thru 9 V
VGS = 8 V
150
I D - Drain Current (A)
I D - Drain Current (A)
150
120
90
VGS = 7 V
60
120
90
60
TC = 125 °C
30
30
TC = 25 °C
VGS = 6 V
TC = - 55 °C
0
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
5
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
10
Transfer Characteristics
1.5
100
1.2
80
g fs -- Transconductance (S)
I D - Drain Current (A)
TC = - 55 °C
0.9
0.6
TC = 25 °C
60
TC = 25 °C
TC = 125 °C
40
20
0.3
TC = 125 °C
TC = - 55 °C
0.0
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0
10
14
Transfer Characteristics
28
42
ID - Drain Current (A)
56
70
Transconductance
0.05
0.008
R DS(on) - On-Resistance (Ω)
R DS(on) - On-Resistance (Ω)
ID = 20 A
0.007
VGS = 10 V
0.006
0.005
0.04
0.03
0.02
TJ = 150 °C
0.01
TJ = 25 °C
0.00
0.004
0
20
40
60
80
100
120
5
6
7
8
9
10
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
On-Resistance vs. Gate-to-Source Voltage
Document Number: 68637
S12-1616-Rev. B, 09-Jul-12
www.vishay.com
3
SUM110N08-07P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6000
10
Ciss
4500
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
ID = 50 A
3000
1500
Coss
Crss
0
0
VDS = 30 V
VDS = 60 V
6
4
2
0
15
30
45
60
0
75
20
40
60
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Capacitance
80
Gate Charge
2.0
100
ID = 20 A
1.7
10
VGS = 10 V
1.4
1.1
0.8
0.5
- 50
TJ = 25 °C
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
VDS = 15 V
8
TJ = 150 °C
1
0.1
TJ = - 55 °C
0.01
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
92
0.7
0.2
ID = 1 mA
ID = 1 mA
- 0.8
ID = 250 µA
- 1.3
VDS (Normalized)
VGS(th) Variance (V)
88
- 0.3
84
80
- 1.8
- 2.3
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
Document Number: 68637
S12-1616-Rev. B, 09-Jul-12
125
150
76
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
Drain Source Breakdown vs. Junction Temperature
For technical questions, contact: [email protected]
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110N08-07P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
1000
Limited by RDS(on)*
10 µs
100 µs
25 °C
150 °C
I DAV (A)
I D - Drain Current (A)
100
10
1 ms
10
10 ms
100 ms, DC
1
TC = 25 °C
Single Pulse
0.1
1
0.00001
0.0001
0.001
0.01
TAV (s)
0.1
0.01
0.1
1.0
BVDSS
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area, Junction-to-Case
150
I D - Drain Current (A)
120
Package Limited
90
60
30
* The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*, Junction-to-Case
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see /www.vishay.com/ppg?68637.
Document Number: 68637
S12-1616-Rev. B, 09-Jul-12
www.vishay.com
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Revision: 08-Feb-17
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Document Number: 91000