STGFW40V60DF, STGW40V60DF,
STGWT40V60DF
Trench gate field-stop IGBT, V series
600 V, 40 A very high speed
Datasheet - production data
Features
• Maximum junction temperature: TJ = 175 °C
1
• Tail-less switching off
• VCE(sat) = 1.8 V (typ.) @ IC = 40 A
3
2
• Tight parameters distribution
1
TO-3PF
TAB
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
2
3
3
2
1
1
TO-3P
TO-247
Applications
• Photovoltaic inverters
Figure 1. Internal schematic diagram
• Uninterruptible power supply
• Welding
C (2, TAB)
• Power factor correction
• Very high frequency converters
Description
G (1)
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGFW40V60DF
GFW40V60DF
TO-3PF
Tube
STGW40V60DF
GW40V60DF
TO-247
Tube
STGWT40V60DF
GWT40V60DF
TO-3P
Tube
April 2014
This is information on a product in full production.
DocID024402 Rev 8
1/21
www.st.com
21
Contents
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
.......................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
2/21
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1
TO-3PF, STGFW40V60DF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.2
TO-247, STGW40V60DF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.3
TO-3P, STGWT40V60DF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DocID024402 Rev 8
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-247
TO-3PF
TO-3P
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
80
A
IC
Continuous collector current at TC = 100 °C
40
A
ICP
Pulsed collector current
160
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
80
A
IF
Continuous forward current at TC = 100 °C
40
A
Pulsed forward current
160
A
VCES
(1)
IFP
(1)
PTOT
Total dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C)
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
TJ
283
62.5
W
3.5
kV
1. Pulse width limited by maximum junction temperature
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-247
TO-3PF
TO-3P
RthJC
Thermal resistance junction-case IGBT
RthJC
Thermal resistance junction-case diode
RthJA
Thermal resistance junction-ambient
DocID024402 Rev 8
0.53
2.4
°C/W
1.14
°C/W
50
°C/W
3/21
Electrical characteristics
2
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
Unit
V
1.8
VGE = 15 V, IC = 40 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 40 A
TJ = 175 °C
Forward on-voltage
Max.
600
VGE = 15 V, IC = 40 A
VCE(sat)
Typ.
2.3
2.15
V
2.35
IF = 40 A
1.7
IF = 40 A, TJ = 125 °C
1.4
V
IF = 40 A, TJ = 175 °C
1.3
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
5
6
2.45
V
7
V
VCE = 600 V
25
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/21
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 480 V, IC = 40 A,
VGE = 15 V, see Figure 34
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID024402 Rev 8
Min.
Typ.
Max.
Unit
-
5400
-
pF
-
220
-
pF
-
180
-
pF
-
226
-
nC
-
38
-
nC
-
95
-
nC
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
52
-
ns
Current rise time
-
17
-
ns
-
1850
-
A/µs
-
208
-
ns
-
20
-
ns
Turn-on current slope
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
see Figure 33
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
456
-
µJ
Eoff(2)
Turn-off switching losses
-
411
-
µJ
Total switching losses
-
867
-
µJ
Turn-on delay time
-
52
-
ns
Current rise time
-
21
-
ns
Turn-on current slope
-
1538
-
A/µs
-
220
-
ns
-
21
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 33
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
1330
-
µJ
Eoff(2)
Turn-off switching losses
-
560
-
µJ
Total switching losses
-
1890
-
µJ
Ets
1.
Parameter
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 40 A, VR = 400 V,
VGE = 15 V, di/dt=1000 A/µs
see Figure 33
Min.
Typ.
Max.
Unit
-
41
-
ns
-
440
-
nC
-
21.6
-
A
-
1363
-
A/µs
Irrm
Reverse recovery current
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
151
-
µJ
trr
Reverse recovery time
-
109
-
ns
Qrr
Reverse recovery charge
-
2400
-
nC
-
44.4
-
A
-
670
-
A/µs
-
718
-
µJ
Irrm
Reverse recovery current
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 40 A, VR = 400 V,
VGE = 15 V, di/dt=1000 A/µs
TJ = 175 °C, see Figure 33
DocID024402 Rev 8
5/21
Electrical characteristics
2.1
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature for TO-247 and TO-3P
AM17385v1
Ptot
(W)
Figure 3. Collector current vs. case temperature
for TO-247 and TO-3P
AM17386v1
IC (A)
VGE= 15 V, TJ= 175 °C
VGE= 15 V, TJ= 175 °C
80
250
70
60
200
50
150
40
30
100
20
50
0
0
10
25
50
0
0
75 100 125 150 175 TC(°C)
Figure 4. Power dissipation vs. case
temperature for TO-3PF
AM17385v4
Ptot
(W)
50
25
40
20
30
15
20
10
10
5
75
100
125
150
AM17387v1
VGE=15V
0
0
TC(°C)
Figure 6. Output characteristics (TJ=25°C)
IC
(A)
TC(°C)
AM17386v5
VGE= 15 V, TJ= 175 °C
30
50
75 100 125 150 175
IC (A)
VGE= 15 V, TJ= 175 °C
25
50
Figure 5. Collector current vs. case temperature
for TO-3PF
60
0
0
25
50
25
75 100 125 150 175
Figure 7. Output characteristics (TJ=175°C)
AM17388v1
IC
(A)
VGE=15V
13V
140
TC(°C)
140
11V
13V
120
120
9V
100
11V
100
9V
80
80
60
60
40
40
20
20
0
0
6/21
1
2
3
4
VCE(V)
DocID024402 Rev 8
0
0
7V
1
2
3
4
VCE(V)
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Figure 8. VCE(sat) vs. junction temperature
Electrical characteristics
Figure 9. VCE(sat) vs. collector current
AM17389v1
VCE(sat)
(V)
IC=80A
VGE=15V
AM17390v1
VCE(sat)
(V)
2.8
3.0
2.6
2.8
IC=40A
Tj=175°C
VGE=15V
Tj=25°C
2.6
2.4
2.4
2.2
2.2
2.0
IC=20A
1.8
2.0
1.8
1.6
Tj=-40°C
1.6
1.4
1.2
-50
0
100
50
150
TJ(°C)
Figure 10. Collector current vs. switching
frequency for TO-247 and TO-3P
1.4
1.2
10
20
40
30
50
60
AM17391v3
IC (A)
90
45
TC=80°C
80
70
35
TC=100°C
30
50
25
40
20
30
15
10
0
1
TC=80°C
40
60
20
80 IC(A)
Figure 11. Collector current vs. switching
frequency for TO-3PF
AM17391v1
IC (A)
70
10
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
Vge=0/15V, Tj=175 °C)
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
Vge=0/15V, Tj=175 °C)
5
0
f(kHz)
10
TC=100°C
f(kHz)
10
1
Figure 12. Forward bias safe operating area for Figure 13. Forward bias safe operating area for
TO-247 and TO-3P
TO-3PF
AM17392v1
IC (A)
AM17392v6
IC (A)
100
100
10μs
10
100μs
1ms
10
10μs
1
0.1
0.01
1
100μs
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
10
100
1
VCE(V)
0.1
1
DocID024402 Rev 8
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
10
100
1ms
VCE(V)
7/21
Electrical characteristics
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Figure 14. Transfer characteristics
Figure 15. Diode VF vs. forward current
AM17393v1
IC (A)
160
Tj=-40°C
AM17394v1
VF(V)
Tj=-40°C
2.4
Tj=175°C
140
Tj=25°C
Tj=25°C
120
2.0
100
Tj=175°C
80
1.6
VCE= 5V
60
40
1.2
20
0
6
VGE(V)
10
8
Figure 16. Normalized VGE(th) vs junction
temperature
AM17395v1
VGE(th)
(norm)
VCE=VGE
IC=1mA
0.8
10
30
20
40
50
60
70
80
IF(A)
Figure 17. Normalized V(BR)CES vs. junction
temperature
AM17396v1
V(BR)CES
(norm)
IC=2mA
1.1
1.0
1.05
0.9
1.0
0.8
0.95
0.7
0.6
-50
50
0
100
150
TJ(°C)
Figure 18. Capacitance variations
10000
0
100
50
150
TJ(°C)
Figure 19. Gate charge vs. gate-emitter voltage
AM17397v1
C(pF)
0.9
-50
16
Cies
AM17398v1
VGE(V)
VCC= 480 V
IC= 40 A
14
12
1000
10
8
Cres
Coes
6
100
4
2
10
0.1
8/21
1
10
VCE(V)
DocID024402 Rev 8
0
0
50
100
150
200
250
Qg(nC)
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Figure 20. Switching losses vs. collector
current
AM17399v1
E(μJ)
Eon
VCC=400V, VGE=15V
Rg=10Ω, Tj=175°C
2800
2400
Electrical characteristics
Figure 21. Switching losses vs. gate resistance
AM17400v1
E(μJ)
VCC=400V, VGE=15V
IC=40A, Tj=175°C
2300
Eon
1900
2000
1500
1600
Eoff
1200
Eoff
1100
800
700
400
300
0
0
40
20
60
IC(A)
80
Figure 22. Switching losses vs. junction
temperature
AM17401v1
E(μJ)
Eon
VCC=400V, VGE=15V
IC=40A, Rg=10Ω
1300
10
0
20
30
40
Rg(Ω)
Figure 23. Switching losses vs. collector
emitter voltage
AM17402v1
E(μJ)
1600
Eon
VGE=15V, Tj=175°C
IC=40A, Rg=10Ω
1400
1100
1200
900
1000
800
700
Eoff
600
Eoff
500
400
300
25
50
75
100
125
150
TJ(°C)
Figure 24. Switching times vs. collector current
AM17403v1
t(ns)
VCC=400V,VGE=15V
200
150
250 300
350 400
450 VCE(V)
Figure 25. Switching times vs. gate resistance
AM17404v1
t(ns)
Tj=175°C, Rg=10Ω
tdoff
200
1000
100
VCC=400V VGE=15V
Tj=175°C IC=40A
tdoff
tdon
tdon
100
tf
tr
tf
10
0
20
40
60
80 IC(A)
10
0
DocID024402 Rev 8
tr
10
20
30
40
Rg(Ω)
9/21
Electrical characteristics
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Figure 26. Reverse recovery current vs. diode
current slope
AM17405v1
Irm(A)
Vr=400V
IF=40A
90
Tj=175°C
Figure 27. Reverse recovery time vs. diode
current slope
AM17406v1
trr(μs)
Vr=400V
IF=40A
250
80
70
200
60
Tj=25°C
150
50
40
Tj=175°C
100
30
20
50
Tj=25°C
10
0
0
500
1000
Figure 28. Reverse recovery charge vs. diode
current slope
AM17407v1
Qrr(nC)
Vr=400V
IF=40A
3000
0
0
1500 2000 2500 di/dt (A/μs)
Tj=175°C
500
1000
1500 2000 2500 di/dt (A/μs)
Figure 29. Reverse recovery energy vs. diode
current slope
AM17408v1
Err(μJ)
Vr=400V
IF=40A
1600
Tj=175°C
1400
2500
1200
2000
1000
1500
800
Tj=25°C
600
Tj=25°C
1000
400
500
0
0
10/21
200
500
1000
1500 2000 2500 di/dt (A/μs)
DocID024402 Rev 8
0
0
500
1000
1500 2000 2500 di/dt (A/μs)
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Electrical characteristics
Figure 30. Thermal data for IGBT in TO-247 and TO-3P
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
-4
-2
-3
10
-1
10
10
tp (s)
10
Figure 31. Thermal data for IGBT in TO-3PF
ZthTOF3T_A
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10
-5
10
-4
10
-3
10
-2
10
DocID024402 Rev 8
-1
10
0
10
tp (s)
11/21
Electrical characteristics
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Figure 32. Thermal data for diode
12/21
DocID024402 Rev 8
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
3
Test circuits
Test circuits
Figure 33. Test circuit for inductive load
switching
Figure 34. Gate charge test circuit
AM01504v1
Figure 35. Switching waveform
AM01505v1
Figure 36. Diode recovery time waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ta
tb
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
VF
dv/dt
AM01506v1
DocID024402 Rev 8
AM01507v1
13/21
Package mechanical data
4
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
TO-3PF, STGFW40V60DF
Figure 37. TO-3PF drawing
7627132_D
14/21
DocID024402 Rev 8
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Package mechanical data
Table 8. TO-3PF mechanical data
mm
Dim.
Min.
Typ.
Max.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
5.45
H
15.30
15.70
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
10
DocID024402 Rev 8
10.20
15/21
Package mechanical data
4.2
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
TO-247, STGW40V60DF
Figure 38. TO-247 drawing
0075325_G
16/21
DocID024402 Rev 8
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Package mechanical data
Table 9. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID024402 Rev 8
5.70
17/21
Package mechanical data
4.3
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
TO-3P, STGWT40V60DF
Figure 39. TO-3P drawing
8045950_A
18/21
DocID024402 Rev 8
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Package mechanical data
Table 10. TO-3P mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.60
5
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1
1.20
b1
1.80
2.20
b2
2.80
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
E
13.90
15.40
15.80
E1
13.60
E2
9.60
e
5.15
5.45
5.75
L
19.50
20
20.50
L1
3.50
L2
18.20
øP
3.10
18.40
18.60
3.30
Q
5
Q1
3.80
DocID024402 Rev 8
19/21
Revision history
5
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Revision history
Table 11. Document revision history
Date
Revision
20-Mar-2013
1
Initial release.
17-Apr-2013
2
Document status promoted from preliminary data to production data.
Added: Section 2.1: Electrical characteristics (curves)
04-Jun-2013
3
Added minimum and maximum values for VGE(th) in Table 4: Static
characteristics.
11-Sep-2013
4
Updated VF value in Table 4: Static characteristics.
08-Oct-2013
5
Updated title, features and description in cover page.
10-Jan-2014
6
Updated Figure 8: VCE(sat) vs. junction temperature, Figure 15: Diode
VF vs. forward current and Figure 16: Normalized VGE(th) vs junction
temperature.
03-Mar-2014
7
Updated test conditions in Table 7: Diode switching characteristics
(inductive load).
8
Added new device in TO-3PF.
Updated Table 1: Device summary, Table 2: Absolute maximum
ratings Table 3: Thermal data and Section 4: Package mechanical
data.
Added Figure 4: Power dissipation vs. case temperature for TO-3PF,
Figure 5: Collector current vs. case temperature for TO-3PF,
Figure 11: Collector current vs. switching frequency for TO-3PF and
Figure 12: Forward bias safe operating area for TO-247 and TO-3P.
Minor text changes.
23-Apr-2014
20/21
Changes
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STGFW40V60DF, STGW40V60DF, STGWT40V60DF
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