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Semiconductor Solutions
CHT-MARS-DATASHEET
Version: 1.8
5-Mar-15
(Last Modification Date)
High-Temperature Small-signal P-channel MOSFET
General description
Features
The CHT-MARS is a high voltage 30V Pchannel small-signal MOSFET designed to
achieve high performance in an extremely
wide temperature range: typical operation
temperature goes from -55°C to 225°C.

Qualified from -55 to +225°C (Tj)

Operational up to +250°C (Tj)

Drain voltage up to 30V

Typ output current 310mA @ 225°C

RDSon = 26@ 225°C

VGS = +0.5V to -5.5V

Validated at 225°C for 1000 hours
(and still on-going)
Available in TO-18 package (other
packages available upon request).
.
Applications
Sensor interfaces, such as piezoelectric
sensor, guard amplifiers, switches of high
and medium impedance loads, levelshifters and high temperature diodes.

Package configurations1
D
S
1
G
TO18 (Top view)
(case connected to source)
Other packages available upon request.
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channel MOSFET - DATASHEET
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Absolute Maximum Ratings
Operating Conditions
Gate-to-Source voltage VGS
Pulsed drain current IDS
(Tpulse ≤ 2µs)
Gate-to-Source voltage VGS
Drain-to-Source voltage VDS
Junction temperature
Junction temperature Tj
ESD Rating
Human Body Model
+0.5V to -5.5V
480mA @ -55°C
420mA @ 25°C
310mA @ 225°C
300°C
0V to -5V
0V to -30V
-55°C to +225°C
.
CLASS1B
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is
not implied. Frequent or extended exposure to absolute maximum rating conditions or above may affect device reliability.
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Electrical characteristics
DC Characteristics
Unless otherwise stated, Tj = 25°C. Bold figures point out values valid over the whole temperature range (T j = -55°C
to +225°C).
Parameter
Symbol
Condition
Min
Typ
Max Unit
-1.3
-0.6
Threshold voltage
VTH
VDS = -50mV
V
VGS = 0V, VDS = -30V,
1
nA
Tj=-55°C
VGS = 0V, VDS = -30V,
Drain cut-off current
IDSS
5
nA
Tj=25°C
VGS = 0V, VDS = -30V,
10
uA
Tj=225°C
VGS = -5V, VDS = -50mV,
33
pA
Tj=-55°C
VGS = -5V, VDS = -50mV,
1
Gate leakage current
IGSS
100
pA
Tj=25°C
VGS = -5V, VDS = -50mV,
0.4
µA
Tj=225°C
VGS = -5V, VDS = -50mV,
12
Ω
Tj=-55°C
VGS = -5V, VDS = -50mV,
Static drain-to-source resistance
RDSon
15
Ω
Tj=25°C
VGS = -5V, VDS = -50mV,
26
Ω
Tj=225°C
-30
Breakdown drain-to-source voltage2
VBRDS
VGS = 0V
V
Dynamic Characteristics
Unless otherwise stated, Tj = 25°C. Bold figures point out values valid over the whole temperature range (T j
to +225°C).
Parameter
Symbol
Condition
Min
Typ
Max
Input capacitance
CISS
VGS = 0VDC, VDS=-25VDC
14
Output capacitance
COSS
VGS = 0VDC, VDS=-25VDC
3.5
Feedback capacitance
CRSS
VGS = 0VDC, VDS=-25VDC
1.5
= -55°C
Unit
pF
pF
pF
Switching Characteristics
Unless otherwise stated, Tj = 25°C. Bold figures
to +225°C).
SymParameter
bol
Turn-on delay time
Td(ON)
Rise time
Tr
Turn-off delay time
Td(OFF)
Fall time
TF
Drain current
ID
point out values valid over the whole temperature range (T j = -55°C
Condition
Min
VDS = -15V, VGS = -5V 1µs pulse
VDS = -15V, VGS = -5V 1µs pulse
VDS = -15V, VGS = -5V 1µs pulse
VDS = -15V, VGS = -5V 1µs pulse
VDS = -30V, VGS = -5V 2µs pulse,
Tj=-55°C
VDS = -30V, VGS = -5V 2µs pulse,
Tj=25°C
VDS = -30V, VGS = -5V 2µs pulse,
Tj=225°C
Typ
Max
Unit
10.1
13.2
10.9
17.2
ns
ns
ns
ns
480
mA
420
mA
310
mA
Thermal Characteristics
Parameter
Thermal resistance
(junction to case, TO-18 package)
1
2
Symbol
Condition
ΘJC
Min
Typ
60
Max
Unit
°C/W
Includes ESD diode leakage current.
Voltage for which the cut-off current evolution versus VDS becomes exponential.
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Typical Performance Characteristics
50
Drain to sourece resistance [Ohms]
5.0
Drain current [mA]
4.5
4.0
-55°C
3.5
25°C
3.0
2.5
125°C
2.0
175°C
1.5
225°C
1.0
0.5
45
40
35
225°C
30
25
175°C
20
125°C
15
25°C
10
-55°C
5
0.0
0
0
-1
-2
-3
-4
-5
0
-1
Drain current vs. gate-source voltage (VD=-50mV).
1.0E-06
1.0E-07
1.0E-08
1.0E-09
1.0E-10
-50
0
50
100
150
-4
-5
200
30.00
25.00
20.00
15.00
10.00
5.00
0.00
250
-100
-50
0
Temperature [°C]
50
100
150
200
250
Temperature [°C]
Cut-off drain current vs. temperature (VG=0V,
VD=-30V).
On-state drain source resistance vs. temperature
(VG=-5V, VD=-50mV).
-1.40
1.0E-05
-1.20
1.0E-06
Gate leakage current [A]
Threshiold voltage [V]
-3
Drain source resistance vs. gate-source voltage
(VD=-50mV).
On-state drain to source resistance [Ohms]
Cut-off drain current [A]
1.0E-05
-100
-2
Gate to source voltage [V]
Gate to source voltage [V]
-1.00
-0.80
-0.60
-0.40
1.0E-07
1.0E-08
1.0E-09
1.0E-10
-0.20
1.0E-11
0.00
-100
-50
0
50
100
150
200
-100
250
Threshold voltage vs. temperature
-50
0
50
100
150
200
250
Temperature [°C]
Temperature [°C]
Gate and ESD diode leakage current vs. temperature (VG=-5V, VD=-50mV).
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600.00
Maximum drain current [mA]
VDS (-30V)
IDS (0 to 480mA)
VGS (0 to -5V)
500.00
400.00
300.00
200.00
100.00
T = -55°C
0.00
-100
-50
0
50
100
150
200
250
Temperature [°C]
Maximum drain current pulse test (T=-55°C).
Peak drain current vs. temperature (VG=-5V, VD=-30V).
VDS (-30V)
VDS
IDS (0 to 420mA)
(a)
RG
VDS
VGS (0 to -5V)
T = 25°C
RD
(b)
(a) IDMAX measurement scheme R=10Ω, C=100µF,
Compliance (VDS=-30V)=100mA (b) Timing measurement scheme RG=0Ω, RD=68Ω, VDS=-15V.
Maximum drain current pulse test (T=25°C).
VDS (-30V)
IDS (0 to 310mA)
VGS (0 to -5V)
T = 225°C
Maximum drain current pulse test (T=225°C).
Timing definition diagram.
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30
1.00
Td(ON)
Tr
Td(OFF)
Tf
25
RDS(on) Limited
area (VGS=-5V)
Drain current [A]
Time [ns]
20
15
10
5
SINGLE PULSE
Tj=225°C
Tc=25°C
0
-100
-50
0
50
100
150
Temperature [°C]
Timing parameters versus temperature.
200
250
Power Limited
(DC)
0.10
0.01
1
10
100
Drain voltage [V]
Forward bias safe operating area
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channel MOSFET - DATASHEET
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Package Dimensions
2.54
Top view
1.27
Ø5.24
45.0°
94
0.
02
1.
5.31-5.84
13.9
18.03
0.44
4.52-4.95
Ø0.49*3
1.48
TO18 (mm+/-10%)
Ordering Information
Ordering Reference
CHT-SPMOS30-TO18-T
Package
TO-18 metal can
Temperature Range
-55°C to +225°C
Marking
CHT-SP3
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Contact & Ordering
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