Journal of Non-Crystalline Solids 270 (2000) 265±268 www.elsevier.com/locate/jnoncrysol Letter to the Editor Wavelength selective materials modi®cation of bulk As2S3 and As2Se3 by free electron laser irradiation q P. Hari a,*, C. Cheney a, G. Luepke a, S. Singh a, N. Tolk a, J.S. Sanghera b, I.D. Aggarwal b a Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA b Naval Research Laboratory, Code 5606, Washington, DC 20375, USA Received 18 January 2000 Abstract In this study we report ®rst measurements of wavelength-selective infrared-induced materials modi®cation of bulk As2 S3 and As2 Se3 . These materials are currently being considered as candidate materials for infrared optical ®ber transmission in the range of 1±10 lm. Our study is aimed at modifying oxygen, hydrogen and carbon impurities bound to chalcogenide constituent elements in the materials to reduce absorption. Tunable infrared radiation from the W.M. Keck Free Electron Laser (FEL) at Vanderbilt was used to excite speci®c vibrational modes, S±O±H and CHx modes in bulk As2 S3 and Se±H, CHx and S±H2 modes in bulk As2 Se3 . Changes in vibrational mode amplitudes are monitored by measuring the intensity of the Fourier transform infrared (FTIR) spectra before and after irradiation at appropriate wavelengths. By tuning wavelengths to hydrogen vibrational modes, we ®nd evidence that hydrogen is released and/or redistributed athermally. In particular, following irradiation at speci®c resonant wavelengths, vibrational mode amplitudes as monitored by FTIR associated with CHx are signi®cantly reduced in bulk As2 S3 and As2 Se3 samples. In As2 S3 , the changes in CHx modes are reversed by heat treatment at 115°C for 35 min in nitrogen atmosphere. Ó 2000 Elsevier Science B.V. All rights reserved. 1. Introduction Chalcogenide compounds of some elements belonging to groups 4B and 5B in the Periodic Table are excellent glass formers [1]. Fibers of q This paper was presented at the 18th International Conference on Amorphous and Microcrystalline Semiconductors ± Science and Technology (ICAMS 18), Snowbird, UT, USA, Aug. 1999. * Corresponding author. Present address: Department of Physics, California State University, Fresno, CA 93740, USA. Tel.: +1-559 278 7096; fax: +1-559 278 7741. E-mail address: [email protected] (P. Hari). chalcogenide glass core and cladding are being developed presently by the Naval Research Laboratory (NRL) for chemical sensing purposes, and for CO and CO2 laser power delivery [2]. In particular, As2 S3 and As2 Se3 ®bers are transparent at infrared wavelengths (1±10 lm), and have excellent chemical durability and glass stability [2,3]. This capability has been enhanced by the recent possibility that the elements As, S and Se have been produced commercially with 99.9999% of the elements for ®ber production [4]. However, the surface of each element becomes oxidized or hydrated during handling [3]. These impurities will contribute to transmission loss when bulk As2 S3 0022-3093/00/$ - see front matter Ó 2000 Elsevier Science B.V. All rights reserved. PII: S 0 0 2 2 - 3 0 9 3 ( 0 0 ) 0 0 0 7 2 - 7 266 P. Hari et al. / Journal of Non-Crystalline Solids 270 (2000) 265±268 and As2 Se3 are formed and utilized to fabricate ®bers. Our motivation in this work is to investigate the possibility of non-thermally altering the material in such a way as to reduce impurity complex concentrations and consequently to reduce losses due to absorption. Our approach is to irradiate As2 S3 and As2 Se3 samples with infrared laser light tuned to oxygen, hydrogen and carbon vibrational modes which may stimulate impurity release and/ or redistribution due to localized, athermal wavelength-selective absorption processes. 2. Experimental Samples of As2 S3 and As2 Se3 used in these experiments were produced by standard melt quenching techniques (produced at the Naval Research Laboratory (NRL), Washington, DC). Details of sample preparation are well documented [1] and will not be reproduced here. The samples used in the measurements were cut into discs of 0.5 cm approximate thickness. The typical diameter of discs used in the study was 1 cm. Samples were cleaned using de-ionized water and polished prior to irradiation. For irradiation and Fourier transform infrared (FTIR) measurements, the samples were mounted on an aluminum platform. To ensure that the same area of the sample exposed to irradiation was measured by FTIR techniques, a circular aperture of 4 mm diameter was made on the aluminum frame. All irradiation was limited to the portion of the sample within the aperture. The free electron laser (FEL) provides light up to 10 MW, tunable from 1.2 to 0.12 eV. This laser delivers a 30 Hz train of 2.5±5 ls macro pulses, each of which is composed of a train of less than 1 ps micro pulses separated by 350 ps. In our studies, the typical FEL power was of the order of 0.7 W. For all the measurements reported in this work, the typical exposure to irradiation was 45 min. For bulk As2 S3 and As2 Se3 samples, wavelengths in the range of 2±6 lm were used for irradiation. To monitor changes in FEL power during irradiation, a re¯ected beam was monitored continuously during operation using an optical pyrometer. To measure the heating due to the FEL beam, a thermocouple was attached to the surface of a bulk sample. During measurements, the FEL beam line was purged by a steady ¯ow of dry nitrogen gas which was necessary to ensure that infrared absorption due to water vapor did not occur during beam delivery. All FTIR measurements reported here were performed using a commercial high resolution spectrometer. 3. Results Our major results are summarized in Figs. 1±3. In As2 S3 , irradiation at 2.88 lm resulted in an increase of the amplitudes of the O±H and C±Hx vibrational modes. A subsequent irradiation at 3.4 lm decreased the C±Hx modes and no changes in the O±H modes was detected (Fig. 1). We have also studied irradiation eects at 4 and 6 lm on the amplitudes of impurity vibrational modes. After an hour of irradiation no changes in the FTIR Fig. 1. FTIR spectra of As2 S3 at selected irradiation are shown. The arrow indicates the speci®c wavelength of irradiation: (a) before irradiation; (b) after irradiation at 2.88 lm; (c) after irradiation at 3.4 lm. P. Hari et al. / Journal of Non-Crystalline Solids 270 (2000) 265±268 Fig. 2. FTIR spectra of As2 Se3 at selected irradiation are shown. The arrow indicates the speci®c wavelength of irradiation: (a) before irradiation; (b) after irradiation at 2.88 lm; (c) after irradiation at 3.4 lm. spectrum was detected at these wavelengths. Based on these measurements we conclude that the changes observed are wavelength-selective. The changes in amplitudes of the vibrational modes were also dependent on FEL power. We observed no changes upon irradiation for output FEL power levels less than 0.4 W. We increased the FEL exposure time at such intensities to 110 min. Measurements after this exposure did not produce any detectable changes in the FTIR spectrum. We monitored the temperature changes upon irradiation and, in every case studied, the temperature changes were of the order of 1°C. We also investigated the changes in CHx impurity vibrational modes in As2 Se3 at 2.88 lm. In bulk As2 Se3 , irradiation at 2.88 lm increased the C±Hx mode amplitude. Further irradiation at 3.4 lm resulted in a ®vefold increase in the C±Hx vibrational mode amplitude (Fig. 2). The eects of annealing on As2 S3 after these irradiations were also investigated. For As2 S3 , irradiation at 3.5 lm resulted in the reduction of C±Hx vibrational mode 267 Fig. 3. FTIR spectra of the eects of irradiation and annealing on As2 S3 are shown. The arrow indicates the speci®c wavelength of irradiation: (a) before irradiation; (b) after irradiation at 3.5 lm; (c) after annealing at 100°C for 35 min. amplitudes (Fig. 3) at 3.52 and 3.4 lm. After annealing at 100°C for 35 min these modes were restored to their original amplitudes. We increased the time of heat treatment to 45 and 65 min. FTIR spectra of the bulk samples after such heat treatments did not yield any measurable change. 4. Discussion The results presented here are the ®rst report, to our knowledge, of wavelength-selective infrared radiation induced materials alterations in chalcogenide glasses. Previous reports on FTIR studies of chalcogenide glasses dealt only with characterizing the various vibrational modes associated with hydrogen, oxygen and carbon impurities [5±8]. The initial measurements reported here on bulk As2 S3 and As2 Se3 indicate that changes in the materials are indeed wavelength dependent. This result along with the observation that no temperature increase 268 P. Hari et al. / Journal of Non-Crystalline Solids 270 (2000) 265±268 is measured by the thermocouple on the sample upon irradiation is evidence that the changes observed are achieved athermally. Even after illumination at an intensity less than 0.4 W, there was no observable change in absorption intensity. Recently a systematic increase in Si±H vibrational modes upon illumination with light has been observed in hydrogenated amorphous silicon by Yiping et al. [9]. These observations performed on various amorphous materials indicate that the underlying disordered structure may be responsible for these large changes in the absorption amplitudes of these vibrational modes. One interesting aspect of these changes is that the intensity of CHx modes is more strongly aected than other modes. Our preliminary study shows that such changes are quite consistent with the changes we observed with short time irradiation. The preliminary work described here provides motivation to undertake a more detailed systematic study of changes in vibrational mode amplitudes associated with impurity absorption in chalcogenide glasses. 5. Conclusions We have demonstrated that materials alterations in chalcogenide glasses can be achieved by irradiating at FEL wavelengths corresponding to the wavelength of vibrational modes due to impurities. The changes observed in vibrational mode amplitudes at particular wavelengths and upon heat treatment we attribute to changes in the metastable disordered structure. These studies represent a novel and unique approach to altering impurity complexes and consequently reducing absorption in a non-thermal manner. References [1] R. Zallen, The Physics of Amorphous Semiconductors, Wiley, New York, 1983. [2] J. Nishii, T. Yamashita, in: J.S. Sanghera, I.D. Aggarwal (Eds.), Infrared Optical Fibers, CRC, Guelph, Ont., 1998, p. 143. [3] M. Dury, in: J.S. Sanghera, I.D. Aggarwal (Eds.), Infrared Optical Fibers, CRC, Guelph, Ont., 1998, p. 305. [4] L.E. Busse, J.A. Moon, J.S. Sanghera, I.D. Aggarwal, Laser Focus World (1996) 143. [5] T. Kanamori, Y. Terunuma, S. Takahashi, T. Miyashita, J. Non-Cryst. Solids 69 (1985) 231. [6] C.T. Moynihan, P.B. Macedo, M.S. Maklad, R.K. Mohr, R.E. Howard, J. Non-Cryst. Solids 17 (1975) 369. [7] P.A. Young, J. Phys. C4 (1971) 93. [8] J.A. Savage, S. Nielsen, Infrared Phys. 5 (1965) 195. [9] Z. Yiping, Z. Dianlin, K. Gauglin, P. Gaugquin, L. Xiabo, Phys. Rev. Lett. 74 (1995) 558.
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