Meeting the design challenges posed
by systems and components for:
• Metallization
• Dielectrics
• Lithography
• Encapsulation & Die Attach Adhesives
• OLEDs, LEDs, PLEDs, Phosphorescents, Electrochromics
© 2013 Gelest, Inc.
Microelectronics & Optoelectronics
Enabling Molecular
Advances in
Microelectronics & Optoelectronics
Organosilicon
and
Metal-Organic Precursors
Microelectronics
METALLIZATION
Gelest offers precursor materials for metallization applications
derived from Group III & IV elements (Si, Al, Ti, Ta, W, In, Sb, Ge) used to create
conductive coatings on silicon, germanium, silicon carbide, sapphire and plastic substrates.
These precursors are suitable for various deposition techniques such as ALD, CVD, MOCVD
and PECVD.
OC2H5
(CH3)3C
C2H5O
C O
OC2H5
W
OC2H5
C2H5O
Cu
2
HC
C O
(CH3)3C
AKT890
AKC252.8
AKC262
(CH3)2N
N(CH 3)2
As
AlH3 . (CH3)2NCH 2CH3
AlH3 . (CH3)3N
OMAL005
OMAL008
N(CH 3)22
OMRU027
OMAS080
Strained Silicon – Silicon sources such as monochlorosilane, dichlorosilane, 1MS, 2MS, 3MS,
4MS and Germanium sources such as germane, t-butylgermane, germanium tetrachloride
and other analogs are used in production of strained silicon using metal organic vapor phase
epitaxy (MOVPE) to improve chip performance and lower energy consumption.
SiGe Precursors
Ge
Ge
CH3
GEG5001
H
H
C2H5
CH3
CH3
CH3
C2H5
H
GET7550
H Ge
GED3410
Ge H
CH3CH2
Ge
CH3 Cl
H
CH3 Ge
H
H
GED3450
Si Cl
CH3 Cl
GEE4695
GET8561
H
H
CH3CH2CH2CH2
H
H
H
(CH3)3C
Ge H
Ge H
GeTe
GeSe 2
GEG5480
GEG5350
H
H
GEB1969.5
GEB1970
Barrier Layers – Group IV material are used to reduce electromigration and other effects that
Cu and Al have on Si and SiO2 insulator properties and adhesion, while reducing metal
corrosion.Typical deposition methods include PVD, CVD and MOCVD.
Tantalum
Cobalt
Titanium
O
O N Co C O
(CH3CH2)2N
C
Ta
Ti
NC(CH 3)3
(CH3CH2)2N
O
(CH3)3C
HC
C O
AKC240
Co
3
(CH3)2N
(CH3)2N
Ta
N(CH 3)2
N(CH 3)2
OMTA075
N(CH 3)2
(CH3)2N
Si
CH3
Br
Br
Ta
OMTI088
CH3CH2
Br
Br
Br
INTA070
CH3
N
H3C
CH3CH2
Ti N(CH 3)2
N(CH 3)2
4
SIT8008.0
N(CH 3)2
C O
CH3
Si
N
CH3
OMTA082
INCO032
(CH3)3C
CH3
(CH3CH2)2N
C
CH2CH3
N Ti N
N
H3C
CH3
CH2CH3
OMTI083
DIELECTRICS
Gelest has developed patented “chloride-free” chemical process technology to commercially produce Group
IV materials for use as gate dielectrics and ILD (inter-layer dielectrics). Typical Group IV materials for gate
dielectrics are compounds of Hf, Zr, and rare earths such as Ce, La, Pr. Typical ILD precursors are Si based.
In addition, Si based materials will play a critical role in future generations of porous dielectric materials that
will require improved adhesion, mechanical and thermal properties.
Gate Dielectrics (High-K)
Porous ULK dielectrics will require the use of CAPS.
Zirconium
Hafnium
CH3
O
CH2
CH3
H3C
C
O
H3C
H3C O H2C
C O Hf
H3C
O
CH3
CH2
O
CH3
N(CH 2CH3)2
AKH326
H3C
Hf N(CH 2CH3)2
Hf
(CH3 ) 2N
C O
OiC3H7
Zr
2 OiC3H7
AKZ948
N(CH 3)2
(CH3)2N
C2H5
N
C2H5
Zr N(CH 3)2
N(CH 3)2
CH3
TDMAZ OMZR080
OMHF083
OMHF080
OMHF075
(CH3)3C
CH3
N Hf N
H3C
N(CH 3 ) 2
OtC4H9
C2H5
N
C2H5
N(CH 3 ) 2
C O
HC
AKZ946
AKH333
(CH3 ) 2N
N(CH 2CH3)2
tC4H9O
OtC4H9
tC4H9O
(CH3)3C
OtC4H9
Zr
Hf
C CH2 O CH3
CH3
C
tC4H9O
OtC4H9
CH3
O
H3C
(CH3CH2)2N
tC4H9O
Inter-Layer Dielectrics (Low-K)
Thin Film
Pore Sealing & CAPS
CH3 H
CH3
H Si CH3
H Si
CH3
1MS
SIM6515.0
3MS
SIT8570.0
N
CH3
CH3
Si H
CH3
CH3
CH3
TSP
SIT8709.8
TMDZ
SIT7542.0
Porous Films & Porogens
(MeO) 3SiCH2CH2
CH2CH2Si(OMe) 3
CH3
O
CH3COCH 2CH2Si
O
Cl
N Si
CH3
CH3
SID3605.0
SID4125.0
OEt
OCH 3
CH3COCH 2CH2Si
EtO
OCH 3
SIA0010.0
SIA0030.0
OEt
SiCH2Si OEt
OEt
OCH 3
CH3
SIB1831.0
SIT8185.0
CH3
OEt
SIB1821.0
SIB1817.0
Etch-Stop Layers
CH3
CH3
H Si CH3
CH3
SID4595.0
SID4593.0
1MS SIM6515.0
2MS SID4230.0
CH3
3MS SIT8570.0
SiO2 Source
H3C
CH3
C
H3C
O
Si
H3C
O
C
H3C
SIM6560.0
CH3
O
O C CH3
C2H5O
O C
C2H5O
OC2H5
Si
CH3
OC2H5
O
DABS SID2790.0
SIP6822.0
CH3 Si CH3
TEOS SIT7110.2
4MS SIT7555.0
MEMS, NEMS, SAMs
SAMs (Self-Assembled Monolayers) – Group IV materials can be applied neat or
in solution via conventional lithography techniques to form SAMs. SAM is a layer of amphiphilic
molecules created by the chemisorption onto a metal oxide, precious metal surface, plastic or
nanoparticle substrates, followed by the 2-dimensional alignment of hydrophobic groups to form
a structures single monolayer. The surface can be selectively modified to achieve the desired antisticktion, mechanical and chemical properties for microelectromechanical systems (MEMS) and
nanoelectromechanical systems (NEMS).
Metal Oxides
SiCl 3
Cl
CF3(CF2)7CH2CH2
Si
Cl
SIA0200.0
SIA0540.0
SIB0991.0
SIA0591.0
Cl
CH3
CH3 O (CH2 CH2 O)
6-9
CF3CF2CF2CF2CF2CF2CH2CH2SiCl
(CH2 )3 Si OCH3
Cl
CH3
SIM6476.0
SIH5841.0
O
HCCH 2CH2CH2Si(OC2H5)3
SIT8185.3
SIT8174.0
SIM6492.7
Gold, Silicon, Titanium Surfaces
CH3(CH2)16CH2 Si H
H
CH3(CH2)10CH2Si
H
H
EPITAXY
H
H
H
CF3CF2CF2CF2CF2CF2CH 2CH 2Si
SIO6635.0
SIT8173.0
SID4629.6
H
Volatile Carbosilanes and Higher Polysilanes – the preeminent precursors for:
• Amorphous Silicon
• SiCO:H films for low-k, barrier layers and etch-stop
• Silicon Carbide films and buffer layers
• ALD promoted patterning and seed layers
• Carbon-doped (Tensile-Strained) Silicon • Silicon Carbonitride passivation
Carbosilanes
SIM6515.0
1MS
SID4593.0
SID4230.0
SID4595.0
SIT8709.3
SIT8709.8
SID4592.0
SIT8715.9
Volatile Higher Silanes
SII6463.4
SIN6597.07
SIT7880.0
SIT8709.6
H
Cl
Optoelectronics
LEDs (Organic, Polymer, Phosphorescent)
Group IV materials are utilized to modify a variety of surfaces that include glass, metal oxides,
plastics and nano-crystals. Plastic substrates are critical in the manufacture of
flexible electronic displays. Gelest offers a multitude of materials for metallization via low
temperature vapor deposition techniques such as CVD and ALD to yield conductive coatings
and dielectric coatings for light emitting diodes to include OLEDs, PLEDs and Phosphorescent
OLEDs. The ability to customize the refractive index of Group IV materials makes them ideal
candidates for cladding fiber optic cables and planar wave-guides. Gelest offers an
extensive range of materials for antireflective and refractive index coatings.
Conductive Coatings
Dielectric Coatings
CH3
H3C
CH3
SNB2000
H3C
C
O
CH3
CH3
H3C
O Sn O C CH3
CH3
SNT7560
CH3
O
H3C
OLED Triplet Emitters
Si(OC 2H 5)3
C CH3
CH3
SIT8088.0
SNT7064
O
CH2
CH3
CH3
SIO6640.0
O
C O Si OH
CH3CH2
H3C C CH3
C CH3
H3C
CH3
C O Si OH
Cl
H3C C CH3
O
CH3
CH3
O
CH3(CH2)16CH2 Si Cl
CH2
H3C C CH3
C CH3
Cl
CH3
CH3
SIB0992.0
SIT8627.0
Optical Dopants
Cl
O
CH3CH2
N
N
O
3
-
N
N
O
+3
Al
2
-
Zn
AKA067
O
+2
3
-
H3 C
+3
AKA036
Ge
CH3
C2H5O
O
OC2 H5
CH2CH3
GET7100
OMRU018
O CH2CH3
B
OC2 H5
Cl
Al
AKZ933.8
N
Ru 3
C2 H5O
AKB156.2
Chromophoric and Phosphorescent Materials
N
N
N
CH3
N
Cu
N
N
N
N
N
O
3
-
O
+2
H3C C O Cd
2
O
+3
Si
N
CH3
H3 C
Si
CH3
Ce
N
3
-
Ga
Al
H3 C
+3
CH3
AKC261
AKA067
CXCD010
SIB1871.0
AKG308
(CH3 ) 3 C
S
N
O
Er
+3
AKE276
Eu
HC
3
-
C O
CF3
AKE286.5
C O
AKE297
3
(CH3 ) 3 C
(CH3 ) 3 C
C O
HC
C O
AKT840.5
SIC2264.6
Tm
3
C O
HC
(CH3 ) 3 C
C O
AKY932
Y
3
3
Gelest, Inc.
Provides technical expertise in silicon and metal-organic materials for
applications in Microelectronics & Optoelectronics. The core manufacturing
technology of Gelest is silanes, silicones and metal-organics with the
capability to handle flammable, corrosive and air sensitive liquids, gases
and solids. Headquartered in Morrisville, PA, Gelest is recognized worldwide
as an innovator, manufacturer and supplier of commercial and research quantities serving advanced technology markets through a materials science driven
approach. The company provides focused technical development and application support for: semiconductors, optical materials, pharmaceutical synthesis,
diagnostics and seperation science, and specialty polymeric materials.
For additional information on Gelest’s Silicon and Metal-Organic
based products or to inquire how we may assist in Enabling Your
Technology, please contact:
www.gelest.com
11 East Steel Rd.
Morrisville, PA 19067
Phone: 215-547-1015
Fax: 215-547-2484
[email protected]