WBSC (250 µm) / WLSC (100 µm) 10 GHz Wire Bondable vertical

WBSC (250 µm) / WLSC (100 µm)
10 GHz Wire Bondable vertical Silicon Capacitors
Rev 5.0
Key Features
Key Applications
 Wire bondable vertical capacitors
 Electrical parameters:
 Large capacitance range: few pF to several 10’s nF
 Ultra high stability of capacitance value over:
 Any demanding applications such as radar,
wireless infrastructure communication, data
broadcasting…
 Standard wire bonding approach (top & bottom
gold metallization)
 Decoupling / DC noise and harmonic filtering /
Matching networks (ex: GaN power amplifier,
LDMOS)
 High reliability applications
 Downsizing. Low profile applications (250 µm
or 100µm)
 Fully compatible with single layer ceramic
Temp. 50 ppm/°C (-55 °C to +150 °C),
voltage < 0.02 %/V, ageing < 0.001%/1000 hours
 Ultra low ESR and ESL
 High reliability (FIT < 0.017 parts/billion hours)
 No memory effect, ultra low dielectric abs. (< 0.05%)
 Physical parameters:
 Various sizes: from 0101 to 0805 formats
 Substrate: Silicon with gold backing
 Dielectric: Silicon dioxide / Silicon nitride
 Compatible with standard wire bonding assembly
(ball and wedge)*
* Please refer to our Assembly Application Note for more details
The WBSC (250 µm thick) and WLSC (100 µm
thick) capacitors target RF High Power
applications for wireless communication, radar
and data broadcasting systems. The WBSC/
WLSC capacitors are suitable for DC decoupling,
matching network, and harmonic / noise
filtering functions. The unique technology of
integrated passive devices in silicon developed by
IPDiA, can solve most of the problems
encountered in demanding applications. These
Si capacitors in ultra–deep trenches have been
developed with a semiconductor process which
enables the integration of high capacitance
density from 1.3 nF/mm² to 250 nF/mm² (with a
breakdown voltage of respectively 450 V to 11 V).
Our SiCap technology features high reliability up to 10 times better than alternative capacitors
technologies - thanks to a full control of the
production process with high temperature curing
(above 900°C) generating a highly pure oxide.
This technology provides industry-leading
performance particularly in terms of capacitor
stability over the full operating DC voltage &
temperature range from –55°C to +150°C. In
addition, intrinsic properties of the silicon show a
low dielectric absorption and a low piezo electric
effect resulting in no memory effect. This Silicon
based technology is ROHS compliant.
IPDiA Capacitors – WBSC/WLSC Series
Electrical Specifications
Part number
WBSC.xxx
WLSC.xxx
935 142 624 522
935 142 620 510
935 142 821 510
935 142 521 410
935 142 622 410
935 142 822 410
935 142 521 310
935 142 522 310
935 142 528 247
935 146 620 510
935 146 821 510
935 146 521 410
935 146 622 410
935 146 822 410
935 146 521 310
935 146 522 310
935 146 528 247
Product description
Wire Bondable vertical Silicon Capacitor,
from -55 to 150°C, 10 GHz with Gold termination
Case Size
0504
0303
0202
0202
0101
0101
0202
0101
0201
0303
0202
0202
0101
0101
0202
0101
0201
WBSC, 22 nF/0504/BV 50 250 µm
WBSC, 10 nF/0303/BV 50 250 µm
WBSC, 10 nF/0202/BV 30 250 µm
WBSC, 1 nF/0202/BV 150 250 µm
WBSC, 1 nF/0101/BV 50 250 µm
WBSC, 1 nF/0101/BV 30 250 µm
WBSC, 100 pF/0202/BV 150 250 µm
WBSC, 100 pF/0101/BV 150 250 µm
WBSC, 47 pF/0201/BV 150 250 µm
WLSC, 10 nF/0303/BV 50 100 µm
WLSC, 10 nF/0202/BV 30 100 µm
WLSC, 1 nF/0202/BV 150 100 µm
WLSC, 1 nF/0101/BV 50 100 µm
WLSC, 1 nF/0101/BV 30 100 µm
WLSC, 100 pF/0202/BV 150 100 µm
WLSC, 100 pF/0101/BV 150 100 µm
WLSC, 47 pF/0201/BV 150 100 µm
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature
Thickness
250 µm
250 µm
250 µm
250 µm
250 µm
250 µm
250 µm
250 µm
250 µm
100 µm
100 µm
100 µm
100 µm
100 µm
100 µm
100 µm
100 µm
Temperature coefficient
Breakdown voltage (BV)
Capacitance variation
versus RVDC
Equivalent Series Inductance
(ESL)
Equivalent Series Resistance
(ESR)
Insulation resistance
Aging
Reliability
Capacitor height
Value
10 pF to 220 nF
± 15 %(**)
-55 °C to 150 °C
- 70 °C to 165 °C
50 ppm/°C
from -55 °C to +150 °C
11, 30, 50, 150, 450 V
0.02 %/V (from 0 V to RVDC)
typ 10 pH @ SRF
typ. 10 m
100 G min @ RVDC & +25°C
Negligible, < 0.001 % / 1000 h
FIT<0.017 parts / billion hours,
Max 250 µm or 100 µm
(**) Other values on request
25°C
Fig.1: Capacitance variation vs temperature
(for WBSC/WLSC and MLCC technologies)
Fig.2: Capacitance variation vs DC biasing
voltage (for WBSC/WLSC and MLCC
technologies)
Fig.3: Various WBSC/WLSC measurement
results (Impedance in shunt mode)
WBSC/WLSC Capacitance Range
Available parts – see table above. For other values, contact your IPDiA sales representative.
Termination and Outline
Termination
Can be directly mounted on the PCB using
die bonding and wire bonding.
Bottom electrode in Ti/Ni/Au and top
electrode in Gold. Other top finishings
available on request. Compatible with
standard wire bonding assembly (ball and
wedge).
Package Outline
(mm)
0101
0201
0202
0303
0404
0504
Pad dimension
a
b
>0.15
>0.15
>0.40
>0.15
>0.40
>0.40
>0.70
>0.70
>0.94
>0.94
>1.28
>0.92
Packaging
Tape and reel, waffle pack, film frame carrier or raw wafer delivery.
Case size (typ. ± 0.01 mm)
L
W
T
0.25(***) 0.25(***)
0.25
0.50
0.25
(standard
0.50
0.50
profile) or
0.80
0.80
0.10 (low
profile)
1.04
1.04
1.38
1.02
W
L
T
a
b
(***): except 1nF/BV 50 0101
(0.294x0.294 mm)
IPDiA Capacitors – Assembly by Wirebonding
Assembly by Wirebonding
The attachment techniques recommended by IPDiA for the WBSC/WLSC capacitors on the customers
substrates are fully detailed in specific documents available on our website. To assure the correct use and
proper functioning of IPDiA capacitors please download the assembly instructions on
www.ipdia.com/assembly and read them carefully.
For WBSC assembly instructions,
please go to:
ww w. i p d i a .c om /as s em b l y a n d
download the pdf file called ‘WBSC
Capacitors - Assembly by
Wirebonding’
Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner. The information
presented in this document does not form part of any
quotation or contract, is believed to be accurate and reliable
and may be changed without notice. No liability will be
accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
For WLSC assembly instructions,
please go to:
ww w. i p d i a .c om /as s em b l y a n d
download the pdf file called ‘WLSC
Capacitors - Assembly by
Wirebonding’
For more information, please visit: http://www.ipdia.com
To contact us, email to: [email protected]
Date of release: 5th July 2016
Document identifier: CL