HT-4502
PRELIMINARY
HIGH-TEMPERATURE SiC FULL H-BRIDGE POWER MODULE
N-Channel MOSFET
1200 V / 92 mΩ
FEATURES






High Temperature: TC(max) = 225 C / TJ(max) = 225 C
AS9100:Rev. C-Certified Manufacturing,
Traceable Throughout Value Chain
Ultra-Fast Switching (<15 Ns), Low Inductance
Enables High System Efficiency
Low Profile, Small Form Factor
Full-Bridge Reconfigurable as Half-Bridge
APPLICATIONS




Aerospace & Defense Systems
Downhole Tools
High-Efficiency Converters / Inverters
Smart Grid / Grid-Tie Distributed Generation
Power Module Absolute Maximum Ratings
Symbol
VDSS
VGSS
Parameter
Drain-Source Voltage
Gate-Source Voltage1
Condition(s)
ID
Continuous Drain Current
PD
Maximum Power Dissipated
TJ(max)
Maximum Junction Temperature
Value
1200
-10 to 25
44
17
220
225
Tstg
Storage Temperature Range
-55 to 225
TC = 25 C, TJ = 200 C
TC = 175 C, TJ = 200 C
TJ = 225 C
Units
V
A
W
°C
TC = 25 °C / TJ = 25 °C, unless otherwise specified.
1
Obtained from ST-Micro SCT30N120D2 Rev. 1 datasheet.
5/15/15 Rev. 1.0
AN ISO 9001:2008 & AS9100:REV. C - CERTIFIED MANUFACTURING COMPANY
1
HT-4502
PRELIMINARY
SiC MOSFET Electrical Characteristics
Symbol
V(BR)DSS
VGS(th)
IDSS
Parameter
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Drain-Source Leakage
Current
Condition(s)
VGS = 0 V, ID = 100 μA
VDS = 10 V, ID = 10 mA
VDS = 10 V, ID = 10 mA, TJ = 200 C
VGS = 0 V, VDS = 1200 V
Includes anti-parallel diode
VGS = 0 V, VDS = 1200 V, TJ = 200 C
Includes anti-parallel diode
IGSS
Gate-Source Leakage
Current
VGS = 20 V, VDS = 0 V
RDS(on)
Drain-Source Turn-On
Resistance
VGS = 20 V, ID = 20 A
VGS = 20 V, ID = 20 A,
TJ = 200 C
Ciss
Input Capacitance1
Coss
1
Qgs
Output Capacitance
Reverse Transfer
Capacitance1
Gate to Source Charge1
Qgd
Gate to Drain Charge1
Qg
Total Gate Charge1
Crss
VGS = 0 V, VDS = 400 V
f = 1 MHz
MOSFETs only
Min
Typical Max
Units
1200
V
5.2
3.5
15
µA
190
100
nA
92
mΩ
102
1700
130
pF
25
16
VGS = 0 – 20 V, VDS = 800 V
ID = 20 A
40
nC
105
Diode Position Electrical Characteristics
Symbol
Parameter
VFM
Forward Voltage
QC2
Capacitive Charge
Condition(s)
IF = 20 A
IF = 20 A, TJ = 200 C
VR = 800 V, IF = 20 A
di/dt = 200 A/μs
Typical
1.6
2.4
Units
V
nC
99
Thermal Characteristics
Symbol
Rθ(j-c)
2
Parameter
FET Thermal Resistance Junction-Case
Condition(s)
Per Position
Typical
0.91
Units
°C/W
Obtained from Cree CPW4-1200-S020B Rev.A datasheet
5/15/15 Rev. 1.0
AN ISO 9001:2008 & AS9100:REV. C - CERTIFIED MANUFACTURING COMPANY
2
HT-4502
PRELIMINARY
Mechanical Characteristics
Symbol
w
M
Parameter
Condition(s)
Weight
Mounting Torque
Value
41
3.6
M4 bolts
Units
g
N·m
Typical Performance Curves
40
35
40
tp < 100 μs
VGS = 20 V
30
tp < 100 μs
VGS = 20 V
35
VGS = 16 V
30
VGS = 16 V
VGS = 12 V
ID (A)
25
ID (A)
25
20
20
15
15
VGS = 12 V
10
10
VGS = 8 V
5
5
VGS = 8 V
VGS = 4 V
0
VGS = 4 V
0
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
VDS (V)
10
12
14
16
18
20
VDS (V)
Fig. 1. Output characteristics at TJ = 25 °C.
40
Fig. 2. Output characteristics at TJ = 175 °C.
40
tp < 100 μs
35
tp < 100 μs
35
30
30
VGS = 20 V
VGS = 16 V
VGS = 12 V
20
VGS = 20 V
VGS = 16 V
VGS = 12 V
25
ID (A)
ID (A)
25
20
15
15
10
VGS = 8 V
10
VGS = 8 V
5
5
VGS = 4 V
0
0
2
4
6
8
10
12
14
18
VDS (V)
Fig. 3. Output characteristics at TJ = 200 °C.
5/15/15 Rev. 1.0
VGS = 4 V
0
16
20
0
2
4
6
8
10
12
14
16
18
20
VDS (V)
Fig. 4. Output characteristics at TJ = 225 °C.
AN ISO 9001:2008 & AS9100:REV. C - CERTIFIED MANUFACTURING COMPANY
3
HT-4502
PRELIMINARY
0.150
30
tp < 100 μs
VGS = 20 V
25
25 °C
20
0.100
225 °C
200 °C
175 °C
25 °C
0.075
IA (A)
On-resistance (Ω)
0.125
tp < 100 μs
15
0.050
10
0.025
5
175 °C
200 °C
225 °C
0
0.000
0
5
10
15
20
25
ID (A)
Fig. 5. On-resistance over temperature.
30
0
0.5
1
1.5
2
2.5
3
3.5
4
VAK (V)
Fig. 6. Diode characteristics over temperature.
Dimensions
All dimensions are listed in millimeters [inches]. CAD models available upon request.
5/15/15 Rev. 1.0
AN ISO 9001:2008 & AS9100:REV. C - CERTIFIED MANUFACTURING COMPANY
4
HT-4502
PRELIMINARY
Disclaimer
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FUNCTION, DESIGN OR OTHERWISE.
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disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
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Phone: 479.443.5759 | Fax: 866.515.6604
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All rights reserved.
5/15/15 Rev. 1.0
AN ISO 9001:2008 & AS9100:REV. C - CERTIFIED MANUFACTURING COMPANY
5