APT80SM120B_S
APT80SM120B
APT80SM120S
1200V, 80A, 40mΩ
Silicon Carbide N-Channel Power MOSFET
TO
-24
7
D 3 PAK
FEATURES
TYPICAL APPLICATIONS
• Fast switching with low EMI/RFI
• PFC and other boost converter
• Low Switching Energy
• Buck converter
• Low RDS(on) Temperature Coefficient For
• Two switch forward (asymmetrical bridge)
• Single switch forward
Improved Efficiency
• Low gate charge
• Flyback
• RoHS compliant
• Inverters
APT80SM120B
APT80SM120S
D
G
S
Maximum Ratings Symbol
VDSS
Parameter
Ratings
Unit
1200
V
Drain Source Voltage
Continuous Drain Current @ TC = 25°C
80
Continuous Drain Current @ TC = 100°C
55
IDM
Pulsed Drain Current
190
VGS
Gate-Source Voltage
ID
PD
1
A
-10 to +25
Total Power Dissipation @ TC = 25°C
625
Linear Derating Factor
4.17
V
W/°C
Thermal and Mechanical Characteristics
RθJC
TJ,TSTG
TL
Torque
Characteristic
Min
Junction to Case Thermal Resistance
Operating and Storage Junction Temperature Range
Unit
0.2
0.24
°C/W
-55
175
260
Mounting Torque (TO-247 Package), 6-32 or M3 screw
°C
10
in·lbf
1.1
N·m
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mA
1200
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance 2
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
Max
Soldering Temperature for 10 Seconds (1.6mm from case)
Static Characteristics
∆VBR(DSS)/∆TJ
Typ
Threshold Voltage Temperature Coefficient
Typ
0.26
VGS = 20V, ID = 40A
40
VDS = 1200V
V/°C
55
V
-4.3
mV/°C
100
TJ = 150°C
250
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
VGS = +20V / -10V
ESR
Equivalent Series Resistance
f = 1MHz, 25mV, Drain Short
Microsemi Website - http://www.microsemi.com
mΩ
2.5
TJ = 25°C
IDSS
VGS = 0V
1.7
Unit
V
Reference to 25°C, ID = 1mA
VGS = VDS, ID = 1mA
Max
±100
0.76
µA
nA
Ω
050-7715 Rev A 11-2014
Symbol
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Eoss
Typical Output Capacitance Stored Energy
Co(er)
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
td(off)
tf
Turn-On Switching Energy
Turn-Off Switching Energy
td(on)
Turn-On Delay Time
tr
td(off)
tf
µJ
266
pF
Eoff
Turn-Off Switching Energy
Source-Drain Diode Characteristics
Parameter
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
19
L = 115 µH
720
Tc = 25°C
ns
µJ
175
11
VDD = 800V
9
VGS = 0/20V
ID = 40A
48
RG = 0.7 Ω 3
22
L = 115 µH
710
Tc = 150°C
ns
µJ
200
TJ = 25°C unless otherwise specified
Test Conditions
ISD = 40A, TJ = 25°C, VGS = 0V
ISD = 40A, VDD = 800V
dI/dt = -100A/µs, TJ = 25°C
2 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
3 RG is total external gate resistance including internal gate driver impedance.
050-7715 Rev A 11-2014
9
RG = 0.7 Ω 3
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
4 Free wheeling diode APT20SCD120B.
13
42
4
nC
50
ID = 40A
Turn-Off Delay Time
Diode Forward Voltage
40
VGS = 0/20V
Current Rise Time
VSD
235
VDD = 800V
Turn-On Switching Energy 4
Symbol
133
f = 1MHz
ID = 40A
Eon2
pF
250
VDD= 800V
Current Fall Time
Unit
VGS = 0V, VDD = 1000V
Turn-Off Delay Time
Eoff
Max
34
VGS = 0/20V
Current Fall Time
Typ
4600
f = 1MHz
Current Rise Time
Eon2
Min
VGS = 0V, VDD = 1000V
Effective Output Capacitance
Qg
tr
APT80SM120B_S
TJ = 25°C unless otherwise specified
Min
Typ
Max
Unit
3.75
V
245
ns
250
nC
2.7
A
TYPICAL PERFORMANCE CURVES
120
= 20V
T = 25°C
GS
TJ= 25°C
TJ= 75°C
80
J
100
TJ= 125°C
TJ= 150°C
60
TJ= 175°C
40
20
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
20V
80
16V
12V
60
40
10V
20
0
0
0
2
4
6
8
10
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
8V
6V
0
120
120
40
10V
20
8V
0
C, CAPACITANCE (F)
20
0
1.4
1.2
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5, RDS(ON) vs Junction Temperature
0
2
4
6
8
10
12
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 4, Output Characteristics
1000
1.0E−9
Coss
1.0E−10
Crss
f = 1MHz
VGS = 0V
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7, Capacitance vs Drain-to-Source Voltage
Qgd
20
800
15
600
Vds
Vgs
10
5
0
200
Ciss
1
6V
4V
25
Vgs, GATE-TO-SOURCE VOLTAGE (V)
1.6
1.0E−11
8V
Qgs
VGS = 20V @ 40A
10V
40
2
4
6
8
10
12
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3, Output Characteristics
1.8
1.0E−8
12V
60
NORMALIZED TO
25
16V
14V
80
6V
2
1
ID, DRAIN CURRENT (A)
12V
100
Qg
400
200
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charge vs Gate-to-Source Voltage
0
VGS = 0V
f = 1MHz
180
Coss STORED ENERGY, Eoss (uJ)
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED TO 25°C)
16V
60
0
14V
18V
80
20V
18V
J
J
20V
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
T = 175°C
T = 150°C
100
14V
18V
160
140
120
100
80
60
40
20
0
0
200
400
600
800 1000 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 8, Typical Output Cpacitance Stored Energy, Eoss
050-7715 Rev A 11-2014
V
Vds, DRAIN-TO-SOURCE VOLTAGE (V)
120
APT80SM120B_S
APT80SM120B_S
TYPICAL PERFORMANCE CURVES
450
400
350
300
250
200
400
600
800
1000
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Effective Output Capacitance, Co(er)
0
IDS, REVERSE DRAIN CURRENT (A)
T = 125°C
-5 VGS
J
−5
-4 VGS
−10
-3 VGS
−15
-2 VGS
−20
-1 VGS
0 VGS
−25
−30
−35
IDS, REVERSE DRAIN CURRENT (A)
0
VGS = 0V
f = 1MHz
(NORMALIZED TO 25°C)
1.01
1
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 13, Breakdown Voltage vs Temperature
ID, DRAIN CURRENT (A)
050-7715 Rev A 11-2014
1000
100
10
RDS(on)
100µs
1ms
1
T = 175°C
J
T = 100°C
C
0.1
10µs
1
10ms
100ms/DC
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 15, Forward Safe Operating Area
-5 VGS
−10
-4 VGS
−15
-3 VGS
-2 VGS
−20
-1 VGS
−25
0 VGS
−30
−35
−10
-3 VGS
−15
-2 VGS
-1 VGS
−20
0 VGS
−25
−30
−35
−4 −3.5 −3 −2.5 −2 −1.5 −1 −0.5 0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 12, Reverse Drain Current vs Drain-to-Source Voltage
Third Quadrant Conduction
1
VGS(th), THRESHOLD VOLTAGE (V)
(NORMALIZED TO 25°C)
VBR(DSS), BREAKDOWN VOLTAGE (V)
−4 −3.5 −3 −2.5 −2 −1.5 −1 −0.5 0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 11, Reverse Drain Current vs Drain-to-Source Voltage
Third Quadrant Conduction
1.04
1.02
J
−40
−40
1.03
T = 25°C
−5
−40
−4 −3.5 −3 −2.5 −2 −1.5 −1 −0.5 0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Reverse Drain Current vs Drain-to-Source Voltage
Third Quadrant Conduction
0
T = 150°C
-5 VGS
J
−5
-4 VGS
IDS, REVERSE DRAIN CURRENT (A)
EFFECTIVE OUTPUT CAPACITANCE, Co(er) (pF)
500
I = 1mA
D
0.9
0.8
0.7
0.6
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 14, Threshold Voltage vs Temperature
APT80SM120B_S
0.25
D = 0.9
0.20
0.7
0.15
0.5
0.10
Note:
t1
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.30
0.3
t2
0.05
0
0.1
t
0.05
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
SINGLE PULSE
10-4
10-5
10-2
10-3
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 16, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
D3PAK (S) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drai n
(Heat Sink)
TO-247 (B) Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
Drai n
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs. }
Gate
Drai n
Source
Source
Drai n
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7715 Rev A 11-2014
3.50 (.138)
3.81 (.150)
APT80SM120B_S
Disclaimer:
050-7715 Rev A 11-2014
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