Accelerated Neutral
Atom Beam
(ANAB)
Industrial Applications
Exogenesis Corporation
February 2014
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Presentation Outline
1. Introduction to Exogenesis
2. Introduction to Technology
3. Surface Modifications and Applications
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Corporate Introduction
Platform Technology
•
Privately funded company employing
platform technology enabling new
generation of medical devices,
photonics, solar, and semiconductor
products.
•
Vast experience in ion beam technology.
•
Design, manufacture, and support
automated HVM tool… multiple tools in
operation > 1 year.
•
Commercializing technology with
multiple customers in various industries.
3
Technology Introduction
Intellectual Property
Gas Cluster Ion Beam (GCIB)
•
•
•
•
Tokyo Electron has IP in many semiconductor applications
Tokyo Electron has secondary apparatus IP
Exogenesis has extensive IP in biomedical applications
Exogenesis has secondary apparatus IP for biomedical applications
Accelerated Neutral Atom Beam (ANAB)
• Exogenesis owns all IP for all applications
• U.S. Patent No. 8,629,393: “Method and apparatus for neutral beam
processing based on gas cluster ion beam technology”
• Extensive portfolio of applications
4
Technology Introduction
NanoAccel – 2 Technologies in One Tool
NanoAccel
– Gas Cluster Ion Beam (GCIB)
– Accelerated Neutral Atom Beam (ANAB)
5
gas
Technology Introduction
Accelerated Neutral Atom Beam (ANAB)
nozzle
• Clusters of atoms generated in vacuum.
• Dissociation of the cluster is promoted and a
deflector removes the charge.
+
+
– Low energy particles (10-100+ eV)
– Single atom particles
– Highly collimated (no divergence)
– Non-contact dry process
– High density flux rate (1e17 atoms/sec.)
Gas is Driven Off
after Impact
Accelerated in Vacuum at 30KeV
accelerator
Deflector
• Neutral atoms that collide with surface have
capability to modify 1-3nm of the material surface.
ionizer
• Clusters are accelerated to hypersonic speeds.
+
+
– Self limiting penetration of 1-3nm
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Technology Introduction
TEM Images of bottoms of 100 nm deep trenches in Si produced
by Accelerated Neutral Atom Beam
silicon surface
amorphous layer
2.1 nm
Accelerated Neutral Atom Beam
ANAB
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ANAB Modification and Applications
Nano-Scale Surface Treatment
Commercial Applications
•
Angstrom level smoothing and
removal of nano-scale defects
•
•
Surface texturing
•
Smoothing and removal of nano-defects
- Optics
- EUV mask blanks
- Aluminum mirrors, etc.
Cleaning organics and polishing debris
Increase surface area
- Improve film adhesion
- Surface energy
Normalize surface nano-features
- Create nano-texture
- Normalize surface frequency
- Improve QC yield
•
Surface passivation / reduce corrosion
- LBO crystal
- Copper
Increase hydrophilicity
Production of free-standing ultra-thin
amorphous carbon films
•
•
Free-standing film for TEM grids
EUV mask blank pellicle
Nano-molecular surface change
•
•
Ultra shallow doping
Thin film / barrier creation
•
Surface amorphization
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ANAB Modification
Surface mechanism of ANAB
Unique Lateral sputtering effect
Quartz sputter rate (~ 15-20 Å/sec)
GCIB’s lateral sputtering has
been well documented.
ANAB retains these properties, but
is more sensitive.
Cluster ~ 4nm
50nm Pit
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ANAB Applications
Angstrom Level Smoothing of Sapphire
Control
ANAB
Exogenesis
process
Ra 1.4 nm
Rz 13.9 nm
Ra 0.11 nm
Rz 1.1 nm
Dry Process – no slurries to clean off
No normal forces – no subsurface damage
Cleans surface of polishing compounds and organic material
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ANAB Applications
Angstrom Level Smoothing of Aluminum Mirror
Exogenesis
process
Ra 5.672 nm Rz 47.331 nm
Ra 0.595 nm Rz 5.413 nm
Dry Process – no slurries to clean off
No normal forces – no subsurface damage
Cleans surface of polishing compounds and organic material
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ANAB Applications
Angstrom Level Smoothing of Variety of Materials
Fused Silica
BK7
SiC
Ra=0.122 Rz=1.941
Ra=0.150 Rz=1.260
Ra=0.272 Rz=2.799
CaF2
Polycrystalline Diamond
MgF2
Sapphire
ZnS
OTHERS….
Ra=0.121 Rz=1.355
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ANAB Applications
Removes Surface Damage
Industry Standard Polished Sample of MgF2
NanoAccel Processed MgF2
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ANAB Applications
Removes Surface Damage
EUV Lithography Mask Blank Substrate Pit Defect Removal
Pit dimensions
(~15 total)
2-15nm
0.160nm Rms
0.151nm Rms
FWHM 30-50nm
* GCIB was evaluated and
shown to be ineffective
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ANAB Application
Produces Nano-scale Texturing
Industry Standard Super Polished Sample of Silicon Carbide
NanoAccel Processed Silicon Carbide
Ra = 0.242nm Rz = 4.139nm
Scratches would be visible and lead to rejection
after interferometer QC inspection.
Ra = 0.563nm Rz = 6.109nm
Randomized surface would pass interferometer QC inspection.
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ANAB Applications
Preparing and Activating Surfaces
Epoxy Adheres to NanoAccel Treated PEEK
PEEK
ASTM F1147
Setup for
static
Tension
testing
Green epoxy
Stainless Steel
Control
No epoxy adheres to control PEEK cylinder
NanoAccel Processed Cylinder
Epoxy adheres on PEEK cylinder
processed with NanoAccel
Study Conducted for Orthopedic Implant Customer
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ANAB Applications
Preparing and Activating Surfaces
Adhesion of Drug to Substrate
Rapamycin on Silicon With or Without Exogenesis Processing
Control Silicon Coated with Drug
Tape applied and removed
•
•
•
Exogenesis Processed Silicon Coated with Drug
Tape applied and removed
Rapamycin spray applied under vacuum to Silicon control and NanoAccel treated substrate.
Samples removed from vacuum chamber.
Tape applied to one half of each substrate. Allowed to sit for 1 minute and peeled off.
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ANAB Application
Surface Passivation LBO Crystal Processed with ANAB
< 1 Hour
≈ 100 Hours
≈ 2 weeks
1. Removed from
package.
2. No processing.
3. Exposed to
atmosphere.
Ra=0.296nm Rz=3.357nm
Ra=3.584nm Rz=35.383nm
Ra=5.977nm Rz=75.273nm
Ra=0.230nm Rz=9.158nm
Ra=0.238nm Rz=7.038nm
1. Removed from
package.
2. ANAB processed.
3. Exposed to
atmosphere.
Ra=0.313nm Rz=16.689nm
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ANAB Application
Surface Passivation of Copper with ANAB
ANAB
ANAB
Control
Control
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ANAB Application
Increase Hydrophilicity of Surfaces
Titanium
Control
Teflon
NanoAccel
Increased hydrophilicity of various substrates enhances
adhesion of coatings and additives
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ANAB Application
Production of Thin Carbon Film
ANAB Process
Sacrificial Carbon material
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ANAB Application
Production of Thin Carbon Film
2nm thick densified layer
Sacrificial Carbon material
Self limiting penetration of 1-3nm
After removal of sacrificial layer – thin free standing carbon film remains
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ANAB Application
Production of Thin Carbon Film
• Visualized with 30,000x TEM
• Measured electron transparency = 0.95
•
Graphene measured transparency = 0.93
• ~1-3nm thick
• Uniform/high quality
• Free standing
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ANAB Application
Production of Thin Carbon Film
Proof Of Concept EUV Pellicle
Single hole - 1mm Diameter
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ANAB Application
Providing Ultra-Shallow Surface Doping
Ability to Cluster Various Gasses

O2, N2, CH4

NF3

B2H6, PH3, AsH3

GeH4, SiH4
{ 1-3nm }
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ANAB Application
Infused Thin Films
Ability to Cluster Various Gasses


O2, N2, CH4
NF3
 B2H6, PH3, AsH3
 GeH4, SiH4
 Etc.
1-3nm
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NanoAccelTM Surface Processing
Examples of Business Relationships
Cardiovascular Drug Eluting Stents
Neurovascular Stents and Flow Diverters
Bone Morphogenic Protein Eluting Orthopedic Implants
DNA Sequencing
EUV Mask Blank Substrates
EUV Lithography Pellicle
Optical Materials
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Exogenesis Corporation is seeking partners in research and
commercialization of the NanoAccel technology.
Contact:
For more information on industrial applications:
Sean Kirkpatrick
Director of Applications
[email protected]
Mike Walsh
Director of Product Development
[email protected]
For more information on biomedical applications:
Art Kurz
Chief Commercial Officer
[email protected]
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