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Research and Development of
Silicon Solar Cells in SANYO
October 20, 2010
Makoto TANAKA
Solar Energy Research Center
SANYO Electric Co., Ltd.
Copyright(C) SANYO Electric Co., Ltd. 2010
1
Outline
1.
1. History
History of
of Sanyo’s
Sanyo’s PV
PV business
business
2.
2. HIT
HIT Solar
Solar Cells
Cells
3.
3. Thin
Thin Film
Film Silicon
Silicon Solar
Solar Cells
Cells
4.
4. Future
Future Prospect
Prospect
Copyright(C) SANYO Electric Co., Ltd. 2010
2
History of photovoltaic technology in SANYO
2nd Gen.
23.0% (100cm2)
HITTM cell (R&D)
HITTM Solar Cells
HIT ; Heterojunction with Intrinsic Thinlayer
2009
Mass production 1997
Stable 10.0%
( >8,000 cm2)
a-Si/a-SiGe
2001
1990
1980
NEDO 1975
Sunshine
Project
Mass production
a-Si solar cell
AMORTON
1st Gen.
a-Si Solar Cells
Copyright(C) SANYO Electric Co., Ltd. 2010
3
1st Generation in SANYO - Amorton TCO
Electrode
Electrode
a-Si
Glass
a-Si
Glass
TCO
Original structure
Residential use
Pocket
See-through
Flexible
calculator
solar cell
solar cell
Solar plane
Copyright(C) SANYO Electric Co., Ltd. 2010
4
Outline
1.
1. History
History of
of Sanyo’s
Sanyo’s PV
PV business
business
2.
2. HIT
HIT Solar
Solar Cells
Cells
a)
a) Conversion
Conversion efficiency
efficiency
b)
b) Thin
Thin wafer
wafer HIT
HIT
3.
3. Thin
Thin Film
Film Silicon
Silicon Solar
Solar Cells
Cells
4.
4. Future
Future Prospect
Prospect
Copyright(C) SANYO Electric Co., Ltd. 2010
5
SANYO’s Approaches to the PV Business
1.
1. SANYO
SANYO carries
carries on
on aa PV
PV business
business by
by HIT
HIT solar
solar cell,
cell,
which
which is
is superior
superior to
to solar
solar cells
cells of
of other
other companies.
companies.
2.
2. All
All process
process including
including production
production of
of wafer,
wafer, system
system and
and
house
house building
building can
can be
be done
done in
in SANYO
SANYO Group
Group
companies.
companies.
3.
3. New
New technologies
technologies have
have been
been continuously
continuously created
created
through
through research
research and
and development
development by
by members
members of
of
world
world highest
highest and
and maximum
maximum level.
level.
Copyright(C) SANYO Electric Co., Ltd. 2010
6
Structure of HIT Solar Cell
HIT
HIT solar
solar cell
cell isis composed
composed of
of thin
thin single
single crystalline
crystalline
silicon
-thin aa-Si
-Si layers
silicon wafer
wafer sandwiched
sandwiched by
by ultra
ultra-thin
layers
*HIT:Heterojunction
*HIT:Heterojunctionwith
withIntrinsic
IntrinsicThin-layer
Thin-layer
The world highest
solar cell conversion efficiency
(production level)
amorphous Si(0.01µm)
21%
Electrode
Top electrode
Bottom electrode
Crystalline Si (n-type)
amorphous Si(0.01µm)
HIT
HIT solar
solar cell
cell
Crystalline Si (p-type)
Conventional
Conventional c-Si
c-Si solar
solar cell
cell
Copyright(C) SANYO Electric Co., Ltd. 2010
7
2nd Generation in SANYO - HIT -
Synergy of crystalline and amorphous technologies
Electrode
n-type
p/i
∼0.01micron
Amorphous Si
Electrode
AR film
n
p
Electrode
Back
electrode
i/n ∼0.02micron
Amorphous Si
Crystalline silicon
solar cells
Features
HIT solar cell
(1) Highest conversion efficiency
(2) High performance even in Summer
(3) Thin crystalline silicon
Copyright(C) SANYO Electric Co., Ltd. 2010
8
World’s Highest Cell Conversion Efficiency and
Excellent Temperature Tolerance
World's highest conversion efficiency achieved
for practical use size
®
Higher
Efficiency
2
（ＨＩＴ R&D Level:100ｃｍ ）
★
23.0
Cell Conversion Efficiency (%)
22.0
Conversion
Conversion efficiency
efficiency
dependant
dependant on
on temperature
temperature
®
HIT : Higher power output even
at higher temperatures
★
20.0
®
ＨＩＴ Mass
production level
1.1
Normalized conversion
efficiency
18.0
2
（100cm ）
16.0
14.0
96 98 00 02 04 06 08 09
Year
1.0
HIT®
HIT
0.9
0.8
c-Si
Polycrystalline
0.7
20 30 40 50 60 70
(℃)
* HIT® is a registered trademark and an original technology of SANYO Electric Co., Ltd.
Copyright(C) SANYO Electric Co., Ltd. 2010
9
Outline
1.
1. History
History of
of Sanyo’s
Sanyo’s PV
PV business
business
2.
2. HIT
HIT Solar
Solar Cells
Cells
a)
a) Conversion
Conversion efficiency
efficiency
b)
b) Thin
Thin wafer
wafer HIT
HIT
3.
3. Thin
Thin Film
Film Silicon
Silicon Solar
Solar Cells
Cells
4.
4. Future
Future Prospect
Prospect
Copyright(C) SANYO Electric Co., Ltd. 2010
10
HIT Solar Cell has Advantage for Thinner Cell
Conventional c-Si Cell
HIT Solar Cell
p/i a-Si
n-type
P-type c-Si
0.0415×10-4/K
Insulator
Al Electrode
0.237×10-4/K
Bending
N-type c-Si
TCO
i/n a-Si
No Bending
Copyright(C) SANYO Electric Co., Ltd. 2010
11
Manufacturing Base
Expand Production in view of Mega Japan-Europe-U.S. Market
Shimane SANYO
Electric Co., Ltd.
Cell Production
Hungary Factory
Japan
Japan
City, Hungary)
Europe
Europe (Dorog
Module Production
USA
USA
Shiga Plant
Module Production
SANYO Solar of Oregon
(Salem, Oregon, USA)
Ingot/Wafer Production
Nishikinohama
Factory
Cell/Module
Production
SANYO Solar (USA)
(Carson, CA)
Ingot/Wafer Production
Monterrey Factory
(Mexico)
Module Production
Copyright(C) SANYO Electric Co., Ltd. 2010
12
History of photovoltaic technology in SANYO
2nd Gen.
23.0% (100cm2)
HITTM cell (R&D)
HITTM Solar Cells
HIT ; Heterojunction with Intrinsic Thinlayer
Next Generation
HIT Solar Cells
2009
Mass production 1997
Stable 10.0%
( >8,000 cm2)
a-Si/a-SiGe
2001
1990
1980
NEDO 1975
Sunshine
Project
Mass production
a-Si solar cell
AMORTON
1st Gen.
a-Si Solar Cells
Copyright(C) SANYO Electric Co., Ltd. 2010
13
Loss in HIT Solar Cell
Light
Output
①∼⑧ Energy Loss
Ag
①Reflection loss
TCO
②Resistive loss at TCO
p/i
a-Si
③Optical Loss at p layer
Light
Light
④Recombination at interface
⑤Recombination at i layer
nc-Si
Electricity
B：Energy loss
⑥
Photovoltaics
⑥Energy loss （hν-Eg）
i/n
a-Si
TCO
A：Optical loss
①，③，⑦，⑧
C：Electrical loss
⑦Long-wavelength light
C1: Recombination loss
④，⑤
⑧Absorption at back
surface
C2: joule loss
②
Copyright(C) SANYO Electric Co., Ltd. 2010
14
Key Technologies for High Efficiency
Light
Electricity
A：Optical loss
①∼⑧ Energy loss
Ag
①Reflection loss
TCO
p/i
a-Si
②Resistive loss
B：Energy loss
C：Electrical loss
C1: Recombination
C2: Resistive loss
③Absorption loss in TCO/a-Si
④Recombination @interface
⑤Recombination @c-Si
nc-Si
Photovoltaics
⑥Energy loss （hν- Eg）
⑦Loss in long-wavelength
i/n
a-Si
TCO
⑧Absorption loss in TCO/a-Si
C1. Improvement in HIT Junction
■Improvement in a-Si Quality
■Low Damage Fabrication of a-Si
A. Reduction in Absorption Loss
i/p a-Si
i/n a-Si
■ Low Optical Absorption Materials
(a-Si and TCO)
n type
c-Si
(textured)
C2. Reduction in Resistive Loss
■Low Resistive Ag Grid Electrode
Copyright(C) SANYO Electric Co., Ltd. 2010
15
Striving for Even Higher Efficiency
D
R&
24%
Solve Challenges
Toward Mass Production
23%
n
a
l
P
w
Ne
22%
n
a
l
P
us
o
i
v
e
Pr
21%
20%
Expand Business with
Next-generation Solar Cell
FY 2010
~
~
FY 2009
FY2012
Projected progress in cell conversion efficiency
Copyright(C) SANYO Electric Co., Ltd. 2010
16
Next Generation Solar Cell
Development Concept
Design that reduces the efficiency loss to nearly the theoretical limits
Conversion Efficiency： Over 23%
Period: Commercialization starting in FY 2014
(Accelerate schedule as soon as possible)
®
Structure: HIT structure
Technology: Applying the performance of thin substrate technology
®
Thickness: Thinner than current HIT
Cost: Lower costs
Location: Currently under investigation with Panasonic s Amagasaki plant
as the primary candidate
* HIT® is a registered trademark and an original technology of SANYO Electric Co., Ltd.
Copyright(C) SANYO Electric Co., Ltd. 2010
17
Progress of Conversion Efficiency in HIT Solar Cell
24
Conversion efficiency (%)
23.0%
23
22.8%(d=98μm)
>200μm
22
21
20
<100μm
R&D
00
02
04
06
Year
08
10
Copyright(C) SANYO Electric Co., Ltd. 2010
18
Outline
1.
1. History
History of
of Sanyo’s
Sanyo’s PV
PV business
business
2.
2. HIT
HIT Solar
Solar Cells
Cells
3.
3. Thin
Thin Film
Film Silicon
Silicon Solar
Solar Cells
Cells
a)
a) New
New Research
Research Center
Center
b)
b) New
New p-CVD
p-CVD
4.
4. Future
Future Prospect
Prospect
Copyright(C) SANYO Electric Co., Ltd. 2010
19
History of photovoltaic technology in SANYO
2nd Gen.
23.0% (100cm2)
HITTM cell (R&D)
HITTM Solar Cells
HIT ; Heterojunction with Intrinsic Thinlayer
2009
Mass production 1997
2001
1990
Next Generation
HIT Solar Cells
Thin-film Silicon
Solar Cells
Stable 10.0%
( >8,000 cm2)
a-Si/a-SiGe
1980
NEDO 1975
Sunshine
Project
Mass production
a-Si solar cell
AMORTON
1st Gen.
a-Si Solar Cells
Copyright(C) SANYO Electric Co., Ltd. 2010
20
G 5.5 Glass Substrate for Mass Production
1,100
mm
1,400
mm
Tandem Panel
Tandem module
(InterSolar 2008, Munich)
Copyright(C) SANYO Electric Co., Ltd. 2010
21
Output performance of Gen5.5 module
Output
performance
Substrate size :Gen5.5
:11.1%
Initial Eff.
(Stabilized Eff.):10.0%
:161.7V
Voc
:1.46A
Isc
:72.4%
F.F.
:171W
Pmax
Depo. Rate of :2.4nm/
μc-Si:H i-layers
I-V characteristics of an a-Si:H/ μc-Si:H
solar panel (1,100mm × 1,400mm)
Copyright(C) SANYO Electric Co., Ltd. 2010
22
Outline
1.
1. History
History of
of Sanyo’s
Sanyo’s PV
PV business
business
2.
2. HIT
HIT Solar
Solar Cells
Cells
3.
3. Thin
Thin Film
Film Silicon
Silicon Solar
Solar Cells
Cells
a)
a) New
New Research
Research Center
Center
b)
b) New
New p-CVD
p-CVD
4.
4. Future
Future Prospect
Prospect
Copyright(C) SANYO Electric Co., Ltd. 2010
23
For Higher Conversion Efficiency
Deposition rate (nm/s)
High Pressure Plasma is Necessary for High Rate Deposition
5.0
New plasma CVD
LPC- CVD
Conventional
Plasma CVD
4.0
a-Si, µc-Si
3.0
µc-Si
2.0
1.0
a-Si
0.0
0
500
1000
1500
Pressure (Pa)
2000
LPC : Localized Plasma Confinement
Copyright(C) SANYO Electric Co., Ltd. 2010
24
New plasma CVD ‘LPC-CVD’
Quick gas
exhausting
Pyramidal nozzles
Gas
supply
Substrate
High density
plasma generation
Plasma
1. Pyramidal nozzles : Origin of holding plasma
Stable and uniform plasma > 1,000 Pa
2. Localized supply and exhaust on shower plate :
Uniform gas residence time
High rate and uniform deposition on large substrates
Copyright(C) SANYO Electric Co., Ltd. 2010
25
Progress in the Performance
Balance among High Efficiency, Large Panel Size
and High Deposition Rate is the most important
Deposition rate of
μc-Si:1.5nm/s
Deposition rate of
μc-Si＞1.8nm/s
Tandem
Tandem
Tandem
Single
Substrate size
0.20m x 0.20m
Eff.=11.1%
D.R.=2.4nm/s
Single
Substrate size
0.55m x 0.65m 1.1m x 1.4m
Copyright(C) SANYO Electric Co., Ltd. 2010
26
New original technologies under development
Original technologies have been under development.
ex) Very high thoughput deposition technology, Localised Plasma
Confinment (LPC) CVD method
Original technologies have been
developed in NEDO R&D
１. Higher throughput
（10 times higher）
“Localized Plasma”
electrode
２. Higher performance
from 10% to >14%
（same level with multi-Si）
Technology of new thin Si
gas flow
Plasama
substrate
anode
∼
VHF
Localized Plasma Confinement CVD
Accelerate in “Advanced Photovoltaics Development Center”
Copyright(C) SANYO Electric Co., Ltd. 2010
27
Outline
1.
1. History
History of
of Sanyo’s
Sanyo’s PV
PV business
business
2.
2. HIT
HIT Solar
Solar Cells
Cells
3.
3. Thin
Thin Film
Film Silicon
Silicon Solar
Solar Cells
Cells
4.
4. Future
Future Prospect
Prospect
Copyright(C) SANYO Electric Co., Ltd. 2010
28
Fusion ; technologies of HIT and Thin-film Solar Cells
Technologies for thin-film Si solar cells are similar to those of HITsolar cells.
Therefore, the highest level technologies for HIT can be easilyapplied to
thin-film Si solar cells.
HIT
HIT solar
solar cells
cells
Molten Si
∼1500℃
Slice
Ingot
wafer
Thin-film Silicon
electrode
grid
Thin
-film solar
Thin-film
solar cells
cells
Transparent
electrode
Thin-film Silicon
electrode
Copyright(C) SANYO Electric Co., Ltd. 2010
29
Striving for Even Higher Efficiency
D
R&
24%
Solve Challenges
Toward Mass Production
23%
n
a
l
P
w
Ne
22%
n
a
l
P
us
o
i
v
e
Pr
21%
20%
Expand Business with
Next-generation Solar Cell
FY 2010
~
~
FY 2009
FY2012
Projected progress in cell conversion efficiency
Copyright(C) SANYO Electric Co., Ltd. 2010
30
Sharing the Use of Assets to Become one of the Global Top 3
®
Panasonic Group expertise
and techniques for design,
development, production
and cost reduction
HIT solar cell device
technology and production
technology
Panasonic’s global network
Sanyo’s global network
Human resources
Human resources
Sharing use of resources, and acceleration of
efforts to become one of the global top 3 by 2015
Copyright(C) SANYO Electric Co., Ltd. 2010
31
Copyright(C) SANYO Electric Co., Ltd. 2010