RAPPORTO FINALE SUI RISULTATI DEL PROGETTO COMUNE DI RICERCA
FINAL REPORT ON RESULTS OF JOINT RESEARCH PROJECT
1. Accordo /Agreement
CNR IMEM/ ..SAV.IEE..
anni/ years …2013-2015……..
2. Titolo del progetto
Cristalli per ottica e per ingrandimento di immagini di raggi x e per rivelatori di raggi x e gamma
2. Title of the project
Crystals for high energy x-ray optics and imaging and x-ray and gamma ray detectors
Parole chiave (massimo 3)
Ottica a raggi x, diffrazione da superficie, preparazioni superfici cristalline
Key words (max. 3)
x-ray optics, surface diffraction, crystal polishing
(solo per parte italiana)
Area scientifica / Scientific area (tabella 1/ table1)
DIITET, Dip. Information Technology, Energy and Transportation
3. Responsabili del progetto
Project leaders
Responsabile italiano
Claudio Ferrari
Slovak project leader
Frantisek Dubesky
istituto di appartenenza
Istituto IMEM
Consiglio Nazionale delle Ricerche
Affiliation
Institute of Electrical Engineering
Slovak Academy of Sciences
indirizzo
Parco Area delle Scienze 37/A
43124 Parma,
Italia
address
Dubravska cesta 9
841 04 Bratislava,
Slovak Republic
4. Obiettivi del progetto
1) Metrologia per raggi x e preparazione di superfici cristalline per imaging per raggi x
2) Collimazione di raggi x alta alta energia per applicazioni mediche
3) Rivelatori di raggi gamma e di raggi x
4. Aims of the project
1
1) X-ray metrology and crystals surfaces for x-ray imaging
2) Focusing of high energy x-rays for medical application
3) X and Gamma ray detectors
5. Risultati ottenuti per obiettivo (1 pagina)
5. Achieved results (one page)
1)
X-ray metrology and crystals surfaces for x-ray imaging
We have developed new methods for the surface characterization based on Atomic Force
Microscopy (AFM), Transmission Electron Microscopy (TEM), Reciprocal Lattice Maps
measurements by using high resolution x-ray diffraction. Crystal surfaces of silicon and germanium
were prepared by Single Point Diamond Turning (SPDT) technique at IEE Institute.
The main results are:
-Smooth surfaces are obtained in Ge crystals even for relatively fast duration of the surface
preparation: 1.5; 0.4 and 0.7 nm rms roughness of Ge surface prepared at 2 mm/min, 1 mm/min and
3mm/min feed rate respectively.
- Much rough surfaces were obtained at the same conditions for Si crystals
- A simple 5 minutes etch by HNO3-H2O2 removes almost completely the residual damage
(004) Reciprocal lattice maps of Si (left) and Ge (right) crystals prepared by SPDT techniques showing the track
periodicity. The much larger diffuse intensity in Si map demonstrates a larger roughness.
2)
Focusing of high energy x-rays for medical application
Focusing of high energy x rays must be perfomed by x-ray diffraction. A lens is made by many
single crystals oriented to follow the lens curvature. In the frame of the cooperation it has been
found that even relatively light crystals such as Si, Ge and GaAs can be more efficient than
previously used heavy materials such as Cu, Au if a proper curvature is induced, simulating a perfect
mosaic crystals. A new method based on surface local damage was proposed.
The obtained crystals were able to focus a wide gamma beam several cm2 wide at a distance of 20
m.
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3)
X and Gamma ray detectors
Schottky barrier large area (up to 4 mm2) photon detectors were fabricated on high purity epitaxial
layers of n-type (nitrogen doped) 4H-SiC grown by LPE on SiC substrates using Au-Ni
metallization and characterized by using X-ray diffraction, I-V, photoresponse and 241Am pulse
height spectra measurements. The obtained results indicate a high purity and an excellent
crystallographic quality of the grown epitaxial layer.
Low free carrier concentration ~1×1014 cm-3 and dislocation density lower than 2×103 cm-2 were
observed in the epilayer. The fabricated 4H-SiC detectors exhibited at RT a current density one
order of magnitude lower than Si detectors, excellent rectifier characteristics, high sensitivity in UV
region with a maximum at 4.3 eV with blindness in vis-nir region and a promising X-ray
spectrometry limited by the noise of the employed spectrometric preamplifier.
These detectors can be used for detection also UV and EUV photons, beside soft X and gamma rays.
Detectors demonstrate high operation stability in strong neutron and gamma ray flux.
Novel electrodes in semi-insulating GaAs based detectors using peculiar metals with low work
function (Gd, Mg, Nd,…) were developed and investigated. Extremely low initial current was
explained by formation of quasi-degenerate region caused by a dipole at the interface due to creation
of M-i-SI GaAs structure during metal evaporation. Such system opens novel development and
application possibilities of different physical sensors, particularly photodetectors.
6. Prodotti del progetto / Results obtained
Pubblicaz. scient. su riviste internaz./ scientific publications on international reviews
con IF-----------8--------senza IF
Pubblicaz. in atti congressi internaz./ publications in international congress proceedings
Pubblicazioni in atti congressi nazionali / publications in national congress proceedings
Pubblicazione libri nazionali / Publication of national books
Pubblicazione libri internazionali / Publication of international books
Altre pubblicazioni / other publications
Brevetti / Patents
Prototipi / Prototypes
Strumentazione / Equipment and /or Devices
Programmi software / Software
Banche dati / Data bases
Protocolli / Protocols
Nuovi Materiali / New Materials
Nuovi processi / New processes
Cataloghi/inventari/repertori / Catalogues/Inventories
Atlanti/Carte/Mappe / Atlases/Charts/Maps
Progetti di ricerca / Reserch project
Trasferimento innovazioni / Knowledge transfer
Laboratori congiunti / Joint laboratories
Alta formazione / Training (seminars)
Altro / Other (rapporti)
n./no.
18
8
2
2
6
6
7. Informazioni dettagliate sui risultati indicati sub 6
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7. Detailed information on results indicated under point 6
Paper published on international journals
1)Zdenko Zápražný ; Dušan Korytár ; Matej Jergel ; Peter Šiffalovič ; Edmund Dobročka ; Patrik
Vagovič ; Claudio Ferrari ; Petr Mikulík ; Maksym Demydenko ; Marek Mikloška; "Calculations
and surface quality measurements of high-asymmetry angle x-ray crystal monochromators for
advanced x-ray imaging and metrological applications," Opt. Eng., 54(3), 035101 (2015).
doi:10.1117/1.OE.54.3.035101.
2) Zápražný, Z., Korytár, D., Šiffalovič, P., Jergel, M., Demydenko, M., Mikulík, P., Dobročka, E.,
Ferrari, C., Vagovič, P., Mikloška, M.: Simulations and surface quality testing of high asymetry
angle x-ray crystal monochromators for advanced x-ray imaging applications. Proc. SPIE 9207
(2014) 92070Y.
3)Simulations and surface quality testing of high asymmetry angle x-ray crystal monochromators for
advanced x-ray imaging applications
Z Zápražný, D Korytár, P Šiffalovič, M Jergel, M Demydenko, P Mikulík, ...
SPIE Optical Engineering+ Applications, 92070Y-92070Y-14
4)Process-induced inhomogeneities in higher asymmetry angle x-ray monochromators
D Korytár, P Vagovič, C Ferrari, P Šiffalovič, M Jergel, E Dobročka, ...
SPIE Optical Engineering+ Applications, 88480U-88480U-8
5) Potential use of V-channel Ge(220) monochromators in X-ray metrology and imaging
D. Korytár, P. Vagovic, K. Végsö, P. Siffalovic, E. Dobrocka, W. Jark, V. Ác, Z. Záprazný, C.
Ferrari, A. Cecilia, E. Hamann, P. Mikulík, T. Baumbach, M. Fiederle and M. Jergel
J. Appl. Cryst. (2013). 46 945-952 [ doi:10.1107/S0021889813006122 ]
6)4H-SiC and novel SI GaAs-based MSM radiation hard photodetectors applicable in UV, EUV,
and soft x-ray detection: design, technology, and performance testing
F Dubecký, J Kováč, B Zaťko, J Oswald, P Hubík, D Kindl, G Vanko, ...
SPIE Optics+ Optoelectronics, 8777B (2013) 8777-56.
7)C. Ferrari, E. Buffagni, E. Bonnini, and D. Korytar, Curved Focusing Crystals for Hard X_Ray
Astronomy, Crystallography Reports, 2013, Vol. 58, No. 7, pp. 1058–1062
8) F. Dubecky, M. Dubecky, P. Hubık, D. Kindl, E. Gombia, M. Baldini, and V. Necas
“Unexpected Current Lowering by a Low Work-Function Metal Contact: Mg/SI-GaAs”
Solid State Electronics 82, 72 (2013)
9) Jiří Oswald; Dobroslav Kindl; Pavel Hubík; Matúš Dubecký; Enos Gombia; Andrea Šagátová;
Pavol Boháček; Mária Sekáčová; Vladimír Nečas
Photocurrent spectra of semi-insulating GaAs M-S-M diodes: Role of the contacts
Submitted to: Solid State Electronics (August 2015)
10) Dubecký, F., Zaťko, B., Vanko, G., Hubík, P., Oswald, J., Kindl, D., Gombia, E., Kováč, J.,
Šagátová, A., Nečas, V.: M/SI-GaAs/M diode: role of the metal contact in electrical transport, ɑparticle and photon detection In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-47995474-2. P. 49-52
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11) Dubecký, F., Osvald, J., Kindl, D., Hubík, P., Gombia, E., Šagátová, A., Boháček, P., Sekáčová,
M., Nečas, V., Mudroň, J.: Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with
a new contact metallization. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM
2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 214-218.
12) Vagovič, P., Švéda, L., Cecilia, A., Hammann, E., Pelliccia, D., Gimenez, E., Korytár, D.,
Pavlov, K., Zápražný, Z., Zuber, M., Koenig, T., Olbinado, M., Yashiro, W., Momose, A., Fiederle,
M., Baumbach, T.: X-ray Bragg magnifier microscope as a linear shift invariant imaging system:
image formation and phase retrieval,. Optics Express 22 (2014) 21508-21520.
13) Dubecký, F., Kováč, J., Kováč, J., Zaťko, B., Osvald, J., Hubík, P., Kindl, D., Vanko, G.,
Gombia, E., Ferrari, C., Boháček, P., Šagátová, A., Nečas, V., Sekáčová, M.: 4H-SiC and novel SI
GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection:
design, technology and performance testing, Proc. SPIE 8777B (2013) 8777-56.
14) Dubecký, F., Dubecký, M., Hubík, P., Kindl, D., Gombia, E., Baldini, M., Nečas, V.:
Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs,. Solid-State
Electr. 82 (2013) 72-76.
15) Korytár, D., Vagovič, P., Végsö, K., Šiffalovič, P., Dobročka, E., Jark, W., Áč, V., Zápražný, Z.,
Ferrari, C., Cecilia, A., Hamann, E., Mikulík, P., Baumbach, T., Fiederle, M., Jergel, M.: Potential
use of V-channel Ge(220) monochromators in X-ray metrology and imaging. J. Applied Crystall. 46
(2013) 945-952.
16) Korytár, D., Vagovič, P., Ferrari, C., Šiffalovič, P.: X-ray crystal optics based on Germanium
single crystals In: Germanium: Characteristics, Sources and Applications. Ed. E.E. Feuerstein. New
York: Nova Sci Publ. 2013. ISBN 978-1-62948-181-4. P. 105-140.
17) Korytár, D., Vagovič, P., Ferrari, C., Šiffalovič, P., Jergel, M., Dobročka, E., Zápražný, Z., Áč,
V., Mikulík, P.: Process-induced inhomogeneities in higher asymmetry angle x-ray
monochromators. Proc. SPIE 8848 (2013) 8848-28.
18) High diffraction efficiency in crystals curved by surface damage
Claudio Ferrari, Elisa Buffagni, Elisa Bonninia, and Dusan Korytar, J. Appl. Cryst. (2013). 46
Proceedings of international conferences, poster or oral presentations
1)Study of residual crystal damage in nanomachined Si and Ge crystals for x-ray optics applications
Francesca ROSSI, Dusan KORYTAR, Claudio FERRARI,
Presented at XTOP 2014 international conference, 14-19 Sept 2014
2)Nano-machining for advanced X-ray crystal optics
Z. Zápražný, D. Korytár, M. Jergel, P. Šiffalovič, Y. Halahovets, J. Keckes, I. Maťko, C. Ferrari,
P.Vagovič, M. Mikloška
23rd International Congress on X-ray Optics and Microanalysis – ICXOM23
Brookhaven National Laboratory, Upton, NY 11973 USA , September 14–18, 2015
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3)F. Dubecký, B. Zaťko, E. Gombia, A. Šagátová, V., Nečas.
“Detection performance study of SI-GaAs detectors with novel electrode metallization”
Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I.
Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 186-190. (VEGA 2/0167/13).
(APVV 0321-11). (EURATOM/CU).
4)Dubecký, F., Zaťko, B., Vanko, G., Hubík, P., Oswald, J., Kindl, D., Gombia, E., Kováč, J.,
Šagátová, A., Nečas, V.
“ M/SI-GaAs/M diode: role of the metal contact in electrical transport, ɑ-particle and photon
detection” Proceedings of the Ninth International Conference on Advanced Semiconductor Devices
and Microsystems ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. p. 4952. (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11). (EURATOM FU-CT-2007-00051).
5)Dubecký, F., Osvald, J., Kindl, D., Hubík, P., Gombia, E., Šagátová, A., Boháček, P., Sekáčová,
M., Nečas, V., Mudroň, J
“ Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with a new contact
metallization”
Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I.
Jamnický. Bratislava: FEI STU 2014. p. 214-218. (VEGA 2/0175/13). (VEGA 2/0167/13).
(EURATOM/CU). (APVV 0321-11).
6) Dubecký, F., Kindl, D., Hubík, P., Oswald, J., Mičušík, M., Gombia, E., Boháček, P., Sekáčová,
M., Zaťko, B., Šagátová, A.: Peculiarities of metal contacts on semi-insulating GaAs: electrical,
photoelectronic and XPS characterization In: Proc. 21th Inter. Conf. on Applied Phys. of Cond.
Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80227-4373-0. P. 216-220.
7) Dubecký, F., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M.: Role of the metal
contact in electrical transport through M/S-GaAs/M structures In: Proc. ADEPT. 3st Inter. Conf. on
Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN
978-80-554-1033-3. P. 112-115.
8) Dubecký, F., Zaťko, B., Gombia, E., Šagátová, A., Nečas, V.: Detection performance study of SIGaAs detectors with novel electrode metallization. In: Proc. 19th Inter. Conf. on Applied Phys. of
Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 97880-227-3956-6. P. 186-190.
Projects proposals
European project “Bent-crystal Laue lens for an In Vivo Imaging Tool”, acronym “B-livit” Call
identifier H2020-PHC-2015-two-stage. The project was presented in October 2014. Despite it
ranked in the first quarter evaluation list of the 300 projects proposed it could not be selected for the
second step.
Claudio Ferrari and Dusan Korytar participated to the European COST action MP1203 “Advanced
X-ray spatial and temporal metrology”
8. Formazione di giovani ricercatori
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