Innovative PECVD chamber clean

Material Supply Innovations
Safe, sustainable and cost efficient
solutions.
Andreas Weisheit
2011
Agenda
The Linde Group
Innovative gas supply solutions
Innovative PECVD chamber clean
Our References
2011-6-17
2
The World’s Leading Gas and Engineering Company
11.2bn Euro sales. Present in more than 100 countries.
Gases Division
Engineering Division
Engineering &
Contracting Specialist
Leading Global Supplier
of Industrial Gases
GROWTH
Emerging markets
Clean energy
Healthcare
Leveraging Gases & Engineering
business synergies
2011-6-17
3
Linde Offering to the Solar Industry
Turnkey scope
On-site Gas Generation (N2, H2, F2, O2)
Bulk Gas Supply Systems (N2, H2, O2, Ar, He)
Bulk Specialty Gas Systems (NH3, SiH4, NF3)
Specialty Gas Cabinets (NH3, PH3, CH4, TMB, B2H6)
Valve Distribution Boxes, Valve Manifold Boxes
Piping to the tools
Gas Leak Detection, Gas Monitoring
Compressed Dry Air
Value Added Services
Application know-how & Engineering
Process Optimisation
Own Research & Development
Engineering & Hook-up Planning
Permitting
Total Gas & Chemical Management
2011-6-17
4
Agenda
The Linde Group
Innovative gas supply solutions
Innovative PECVD chamber clean
Our References
2011-6-17
5
Global Linde Silane Footprint
HOW do we
deliver Silane ?
 Linde’s supply chains provide maximum security of supply & flexibility
for our customers.
 Dedicated trailer fleet and buffer stocks in place across the continents.
USA (> 1000MT Source)
Europe
USA
KOREA (>1500 MT Source)
Europe
China
Taiwan
Supplies to
2011-6-17
China, Taiwan
Supplies to
WHY use
Global SIlane?
Supplies to
WHERE are
LINDE Sources?
EUROPE (>300 MT Source)
China
Taiwan
Europe
 Linde have access to silane sources in 3 continents with
>2000 MT contracts in place.
 Independent locations provide mitigation of currency and political risk.
6
Lowest Cost of Ownership by on-site dopant blending
Dopant gases are typically delivered as 0.5…5% mixture in H2.
WHAT are
Dopants?
Dopant gases are hydrides from group III (e.g. TMB) or group V (e.g. PH3)
elements that can alter the electrical properties of a semiconductor layer
and make it p(+) or n(-) conductive.
HOW do we
deliver it?
Dynamic Dopant
Blending Systems
use pure hydrides
and H2 available
from the tankfarm
to make the mix
WHY use
DDBS?
2011-6-17

Safety

Cost Reduction Reduced cost of ownership

CO2 Footprint
Less cylinder handling steps
Eliminates cylinder shipping
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On-site Hydrogen Supply
The experience of the world’s leading Hydrogen engineers.
WHICH
Technology for
Hydrogen?
HOW do we
deliver it?
WHY use LINDE?
2011-6-17
Multiple on-site generation technologies: Electrolysis, Steam
Methane Reforming, Methanol cracking.
– High reliability and lowest cost of ownership.
– Quick installation and ease of maintenance.
– Conventional and reliable catalyst systems, proven reactor & PSA technology.
Capacities
from <50 to
>1000 NM3/hr
Proven technology =
The LeadIng on-site
Hydrogen supply
Linde Hydrochem – manufacturers of over
200 Steam Methane Reformers.
Linde Installed record of Electrolysers
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Agenda
The Linde Group
Innovative gas supply solutions
Innovative PECVD chamber clean
Our References
2011-6-17
9
Innovative PECVD chamber clean
Fluorine is the active ingredient in all silicon chamber cleaning.
WHAT is
Fluorine?
Fluorine gas (F2) is a faster and environmentally friendly replacement for
Greenhouse Gases like NF3 used to clean waste silicon from CVD process
chambers
2HF
HOW do we
deliver it?
Generation-F®
On-site Fluorine
Generation
Systems
KF.2HF
90oC
F2 + H2
F2
HF
H2
Anode
Electrolyte
(+ve)
Cathodes
(-ve)
WHY use
Fluorine?
2011-6-17

Productivity

Cost Reduction Direct material cost saving of >15%

Sustainability
Faster chamber cleaning improves PECVD tool
throughput, typically between 4 and 12%
F2 has Zero Global Warming Potential, eliminates risk
of Green House Gas emissions and lowers overall CO2
footprint
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Linde Delivers: F2 Cleaning in European Photovoltaics
Experience in Electronics
Applications
Successful Development
Program in PV
Implementation in
manufacturing
300mm Semiconductor
Full scale demonstration
Clean rate performance
Clean rate depends only on atomic fluorine
flow, regardless of whether NF3 or F2 is used
Remote plasma source unit power usage
2,5
10
2,0
9
RPS unit power (kW)
clean rate (normalized)*
LTPS Displays
Lower dissociation energy of F2 means much higher
flow of cleaning gas possible for same RPS power
clean rate vs. atomic flow rate
1,5
1,0
NF3
F2
0,5
RPS unit power limit
NF3
F2
Practical atomic flow
limit for NF3: 28.5slm
8
7
Practical atomic flow
limit for F2: 120slm
6
5
0,0
0
4
10
20
30
40
50
atomic fluorine flow (slm)
* Reference clean rate 1,0 for 18 slm atomic F, for 6slm NF3 under std conditions
Wider process window for F2 allows choice of
energy-efficient cleaning or high-rate cleaning
0
Clean rate vs. RPS unit power
NF3 standard
usage
1,0
Theoretical maximum NF3
clean rate (for 9.5slm): 1.7
0,5
0,0
4
5
6
7
8
RPS unit power (kW)
* reference clean rate 1.0 for 6 slm NF3
40
50
RPS output temperature variation during cleaning process
NF3
F2
2,0
1,5
20
30
Atomic fluorine flow (slm)
45
Theoretical maximum F2
clean rate (for 60slm): 6.4
9
10
RPS output temperature increase (°C)
clean rate (normalized)*
2,5
RPS unit power limit
3,0
10
A lower temperature increase at the RPS outlet
for F2 vs NF3 is beneficial for tool parts lifetime.
NF3
F2
40
35
High volume manufacture
30
25
20
15
10
5
0
10
20
30
Atomic fluorine flow (slm)
40
50
Large area TFT-LCD
2011-6-17
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Linde Delivers: continuous application improvement
In-situ activated clean
Direct molecular clean
Chamber cleaning: direct molecular clean
In-situ activation clean: influence of RF power
500
400
Argon step
For RPS clean only
300
But faster overal
chamber clean
Slower clean of susceptor and
showerhead with in-situ clean.
200
100
In situ RF 3000W, No RPS, 9slm
In situ RF 5000W, No RPS, 9slm
RPS ON, no RF, 9slm
RPS ON, RF 500W, 9slm
beginning of in-situ clean
no argon step required
0
0
25
50
75
100
Time (sec)
Chamber clean time (norm)
Chamber pressure (mTorr)
1,0
0,8
0,6
0,4
0,2
0,0
Std Clean (RPS activated)
Thermal clean: 9Torr
Process
• High dissociation by RF plasma.
• F2 is reactive with silicon at temperature <200°C.
• Chamber clean shorter than with RPS activation.
• No plasma activation required (no RPS).
 Higher uptime
• 80% clean time reduction achieved.
 lower cleaning costs
• No ion bombardment, ‚gentle‘ clean.
 Lower CAPEX & maintenance
2011-6-17
 Lowest Cost of Ownership
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Safe supply by on-site generation
• Never experienced an F2 leak or fire, in > 10 years.
Fluorine reactivity is well understood and managed safely at low
pressures, low velocities and with proprietary system designs.
Complete surface passivation ensures system durability.
Linde F2 Systems operate at < 1.5 bar.
• On-site systems operated in > 12 electronics customer facilities since 2001
with no F2 incidents.
• Linde’s Intellectual Property – Patents, trade secrets and know-how ensure
long term safe, reliable, high purity operation
2011-6-17
13
Agenda
The Linde Group
Innovative gas supply solutions
Innovative PECVD chamber clean
Our References
2011-6-17
14
In Electronics, in all major sectors, Linde’s strategy is
closely linked to the most dynamic growth leaders.
Semiconductor
First choice for the
top semiconductor
manufacturers.
Linde is currently
executing major gas
supply projects for
each of the top 3
semiconductor
manufacturers with a
combined
investment value of
>Eur200m
 # in logic (USA)
 # in memory (KOR)
 #1 in Foundry (TW)
2011-6-17
Photovoltaic
First choice for thin
film customers the
world over:
• Oerlikon (7/11)
• AMAT (8/11)
• ULVAC (2/4)
• Apollo (4/4)
First choice for the
global #1module
maker in c-Si
(China)
First choice as a
technical partner:
• Thin film JDPs
• c-Si JDPs
First choice for
emerging regions
• India (>75%)
LED
First choice in Asia
TFT-LCD
First choice in China
Taiwan – customers
are #1 and #2 HB
LED makers.
Currently
executing the first
2 Gen 8 TFT fabs in
China with a
combined
investment value
of >Eur45m
China – currently
executing gas
supply projects for
6 major new fabs
China – Just
executed the first
Grade 7.0 domestic
Ammonia plant.
First choice for F2
Europe & USA –
long-term
contracts with #1
in each region.
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Thank you for your attention
Linde Electronics.
The power behind tomorrow’s technologies
2011-6-17
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