Gallium Arsenide
Product Information
Freiberger Compound Materials GmbH
Welcome at Freiberger Compound Materials GmbH
About us
Freiberger is one of the world’s leading manufacturers of
gallium arsenide (GaAs) compound semiconductor materials
for the microelectronic and optoelectronic industries.
Freiberger is well known for its use of very efficient and
highly automated techniques – from GaAs synthesis and
mono‑crystal growth to wafer polishing and cleaning – to
produce the highest quality epi-ready wafers.
Freiberger has established an outstanding reputation as the
first supplier to offer both VGF (Vertical Gradient Freeze) and
LEC (Liquid Encapsulated Czochralski) material.
History
Freiberger derives its name from the place where it is located.
Freiberg, a city in Germany, has a mining tradition going back
over 800 years and is home to a university founded in the mid
1700s. The company’s business activities date back to 1957,
and formed the very beginning of the semiconductor industry
in the area. From these roots, a high-tech industrial park has
grown, where besides Freiberger’s GaAs, microelectronic and
solar cell silicon is produced by other major companies.
In 1995, Federmann Enterprises, Ltd. acquired the company,
and established Freiberger Compound Materials as a privately
held company. After investments of over 100 million EUR,
Freiberger currently operates a facility with 4,000 m² of
clean room space, the most extensive analysis and evaluation
laboratory in the industry, and with over 250 employees. GaAs
wafers are supplied to major device manufacturers all over the
world.
Quality
To achieve customer satisfaction we have implemented a
quality and environmental management system that focuses
on continuously improving our products and services.
The system is an important monitoring tool, which aims at
satisfying our customers‘ requirements and improving all
business processes.
All of our employees are focused on our quality and
environmental objectives. Creativity, innovative spirit, quality
and environmental consciousness ensure the regular renewal
of the DIN EN ISO 9001 and 14001 certificates.
Well-functioning organizational structures, streamlined
information flow and efficient training programs secure skills
and motivation for the team.
This is ensuring all stakeholders‘ involvement in the further
enhancement of the quality and environmental management
system.
Quality — Proven by Measurement
Measured parameter
Purity of raw materials
and crystals
Method
Ion-coupled plasma atomic emission spectrometry (ICP-AES)
Ion-coupled plasma mass spectrometry (ICP-MS)
Atomic absorption spectrometry (AAS)
Glow discharge mass spectroscopy (GDMS)
Crystalline perfection
KOH etching, etch pit density (EPD) topography
Rocking curve topography
Electrical parameters
Contactless resistivity topography
(COREMA, eddy current)
Hall/van der Pauw measurement
Contactless mobility measurement (μCOREMA)
EL2 concentration
IR absorption topography
Dopant distribution
IR absorption topography
Photoluminescence topography (PL)
Mappings are for illustration purposes only.
Quality — Proven by Measurement
Measured parameter
Method
Carbon content
F TIR localized vibrational mode spectroscopy
Wafer orientation
X-ray diffraction
Particles
Light scattering topography (SURFSCAN)
Surface roughness
White light interferometry
Atomic force microscopy (AFM)
Profilometry
Surface residual impurities
Total reflection X-ray fluorescence (TXRF)
Time-of-flight secondary ion mass spectrometry (ToF-SIMS)
Wafer flatness
Interferometry (ULTRASORT)
Wafer surface oxide condition
Ellipsometry (CANDELA)
Mappings are for illustration purposes only.
Geometrical Flatness Parameters
Parameter
Definition
TTV Total Thickness Variation
TIR Total Indicated Reading
Warp Bow Global parameters
TTV = |A| + |B|
Difference between the maximum
and minimum values of the wafer
thickness with the wafer clamped.
Sum of the maximum positive
and negative deviations from the
best fit plane with the wafer
clamped.
B
TTV = |A| +A |B|
B
A
TIR = |A| + |B|
A
B
Focal plane
B
Focal plane
A
Warp = |A| + |B|
Sum of the maximum positive
and negative deviations from the
best fit plane with the wafer
unclamped.
A
B
Focal plane
A
B
Focal plane
Warp = |A| + |B|
Distance between the surface
and the best fit plane at the center
of an unclamped wafer.
Local Thickness Variation
LFPD Local Focal Plane Deviation
Focal plane
TIR = |A| + |B|
Best fit plane
Bow
Best fit plane
Bow
Center Point
LTV Focal plane
Center Point
Local parameters
LT V = max (LT V1..n )
Difference between the maximum
and minimum values of the wafer
thickness within a field of specified
size with the wafer clamped.
LT VLTV
=1maxLTV
(LT2 V1..n )
Maximum distance between
the surface and the best fit plane,
either above or below, in a field
of specified size with the wafer
clamped.
LFPD = max (LFPD 1..n )
LTV1
LTV2
LTVn-1
LTVn
LTVn-1
LTVn
Field size
Edge
Field size
exclusion
Edge
exclusion
LFPD=1 max
LFPD
) n-1
LFPD
(LFPD
2
1..n LFPD
LFPD1
LFPD2
LFPDn-1
LFPDn
LFPDn
Field size
Edge
Field size
exclusion
Edge
exclusion
Surface Orientation
Off-orientation by crystallographic directions
Standard off-orientation for V-groove (US) flat option
Standard off-orientation
for notch option
[100] vector normal
to the (100) plane
Vector normal
to the wafer front side
Projection of wafer
front side normal vector
on the (100) plane
Off‑orientation
angle φ
φ
Projection of wafer
front side normal vector
on the (100) plane
Off‑orientation
angle φ
φ
[010] vector
[010] vector
[100] vector normal
to the (100) plane
Vector normal
to the wafer front side
OF
Orthogonal
misorientation
Orthogonal
misorientation
Notch
IF
(100)
(100)
Tilt axis
Tilt axis
Off-orientation by tilt azimuth angle e
As a reference, a line is drawn from the center point of the
wafer front surface to the center of the primary flat or the
apex of the notch.
The tilt azimuth angle, e, is the angle measured clock­wise from
the reference line to the direction of off-orientation.
Vector normal
to the reference plane
Vector normal
to the wafer front surface
The tilt angle, f, is defined by moving the vector normal on
the reference plane towards the wafer surface in the direction
defined by the e angle.
Vector normal
to the reference plane
Vector normal
to the wafer front surface
Off-orientation
angle φ
Off‑orientation
angle φ
φ
φ
Tilt azimut
angle ε
Tilt azimut
angle ε
ε
ε
Notch
Tilt axis
Reference plane
OF
Tilt axis
Reference plane
Notch/Flat Position
Notch option
[010]
‑
[011]
As facet
‑
(111)
‑
[001]
Dove tail
V‑groove
‑
(101)
(110)
Notch
[011]
‑‑
(111)
(111)
‑‑
[011]
Front side (100)
(100)
Ga facet
‑
(110)
(101)
‑
(111)
[001]
‑
[010]
Notch
‑
[011]
Dove tail (Europe/Japan) flat option
-[011]
[001]
-(111)
(101)
[011]
Ga facet
OF
(111)
Dove tail
V‑groove
[010]
(110)
(111)
IF
[011]
Front side (100)
(100)
(111)
[010]
As facet
(101)
(110)
[001]
IF (secondary)
[011]
OF (primary)
V-groove (US) flat option
[010]
(110)
[011]
(111)
‑
[011]
As facet
‑
(111)
‑
[001]
OF
Dove tail
V‑groove
‑
(101)
‑‑
(111)
IF
‑‑
[011]
Front side (100)
(100)
Ga facet
[001]
‑
(110)
(101)
‑
(111)
‑
[011]
‑
[010]
OF (primary)
IF (secondary)
Physical Parameters
Crystal structure
Zinc blende
Lattice constant (300K)
5.654 Å
Atomic density (300K)
4.43 ×1022 cm-3
Melting point
1238 °C
Density (300K)
5.315 g cm-3
Linear thermal expansion coefficient (300K)
6.03 ×10-6 K-1
Thermal lattice conductivity (300K)
Specific heat (300K)
Energy gap (300K)
0.48 W cm-1 K-1
0.325 J g-1 K-1
1.42 eV
Electron mobility (300K)
8800 cm2 V-1 s-1
Hole mobility (300K)
450 cm2 V-1 s-1
Effective electron mass
0.068 m0
Intrinsic electron concentration
1.8 ×106 cm-3
Intrinsic resistivity (300K)
3.8 ×108 Ω cm
Static electric constant (300K)
12.85
Optic electric constant (300K)
10.88
Elastic constants
C11
11.88 ×1010 Pa
C44
5.94 ×1010 Pa
C12
5.38 ×1010 Pa
Mohs hardness
4.5
Knoop hardness
7.35 ×109 Pa
Vickers hardness for (0.05 .. 1) N 6.52 ×109 Pa
Surface energy
{100}
220 ×10-6 J cm-2
{110}
150 ×10-6 J cm-2
{111}
130 ×10-6 J cm-2
Freiberger Compound Materials GmbH
Headquarter
Freiberger Compound Materials GmbH
Am Junger-Löwe-Schacht 5
09599 Freiberg, Germany
Telephone: +49 3731 280-0
Fax: +49 3731 280-106
Email:
[email protected]
North America
Freiberger Compound Materials USA, Inc.
Dr. Russell E. Kremer
7071 Corporate Way, Suite 203
Dayton, OH 45459, USA
Telephone: +1 937 291 2899
Fax: +1 937 291 2898
MP:
+1 937 602 6847
Email:
[email protected]
Nelson von Ebbe
Telephone: +1 415 640 4227
Email:
[email protected]
Western Europe
except Germany, Austria and UK
Azelis France SAS
Dr. Elie Prudhommeaux
23 Rue des Ardennes
75940 Paris Cedex 19, France
Telephone: +33 1447 310-72
Fax: +33 1447 310-53
Email: [email protected]
Japan
Alcan International Network
Masaru Sakamoto
29 F, Shinjuku Mitsui Bldg.,
2-1-1 Nishi Shinjuku,
Shinjuku-ku, Tokyo 163-0429, Japan
Telephone: +81 3334 967-02
Fax: +81 3334 967-78
Email:
[email protected]
Taiwan
Lumi Innovation Tech. Corp.
Joanne Huang
11 F-4, No. 58, Sec. 3, Min chuan E. Rd.
Taipei, Taiwan 104
Telephone: +886 2 2517 7313
Fax: +886 2 2517 0790
MP: +886 938 552 957
Email:
[email protected]
Korea
K1 Solution, Inc.
Jin-Han Jung
Room 1313, A-dong,
Gwangmyeong SK Technopark, 1345,
Soha-1dong, Gwangmyeong-si,
Gyeonggi-do, 423-795, Korea.
Telephone: +82 2838 286-6
Fax: +82 2600 828-67
Email:
[email protected]
China
Topco Scientific (Shanghai) Co., Ltd.
Allen Hung
Rm. 606, No. 333, Zhao Jia Bang Road
Shanghai, China
Telephone:+86 21 6422 0458 ext. 288
Fax:
+86 21 6422 1912
MP: +86 1872 154 0395
Email:
[email protected]
Am Junger-Löwe-Schacht 5
09599 Freiberg, Germany
Telephone:+49 3731 280-0
Fax:
+49 3731 280-106
Email: [email protected]
Web: www.freiberger.com
150 mm SI VGF GaAs
Parameter
Unit
Diameter
mm
Crystal growth method
Resistivity *1
Ωcm
Hall mobility
cm2/ Vs
Carbon content
cm-3
Etch pit density *2
avg. value on wafer
cm-2
EL2 concentration
avg. value on wafer
cm-3
(100)-orientation
on
°
off towards (110) *3
°
Notch
orientation
angle
°
depth
mm
Thickness *3
μm
Total thickness variation (TTV)
μm
Total indicated reading (TIR)
μm
Local focal plane deviation (LFPDmax )
μm
Local thickness variation (LTVmax )
μm
Measurement site size
mm
Warp
μm
Particles
diameter > 0.3 μm
pcs.
Front side treatment
Back side treatment
Laser marking
Packaging
*1
measured @ 22°C
measured according to DIN 50454-1: whole wafer mapping, site size 500 x 500 μm2
number of sites 64525, edge exclusion 3 mm
*3 other values upon request
*2
Freiberger
Values
150.0 ± 0.1
VGF
(0.8 ... 8.0) × 108
(7.5 ... 4.0) × 103
(1.0 ... 10.0) × 1015
≤ 10 000
(1.0 ... 1.5) × 1016
± 0.5
2.0 ± 0.5
[010] ± 2°
90 +5/-1
1.00 +0.25/-0.00
675 ± 25
≤6
≤5
≤ 1.5
≤ 1.8
20 × 20
≤8
≤ 100
polished
polished
acc. SEMI M 12
cassette
150 mm SI LEC GaAs
Parameter
Unit
Diameter
mm
Crystal growth method
Option A
Resistivity *1
Ωcm
Hall mobility
cm2/ Vs
Carbon content
cm-3
Option B
Resistivity *1
Ωcm
Hall mobility
cm2/ Vs
Carbon content
cm-3
Etch pit density *2
avg. value on wafer
cm-2
EL2 concentration
avg. value on wafer
cm-3
(100)-orientation
on
°
off towards (110) *3
°
Notch
orientation
angle
°
depth
mm
μm
Thickness *3
Total thickness variation (TTV)
μm
Total indicated reading (TIR)
μm
Local focal plane deviation (LFPDmax )
μm
Local thickness variation (LTVmax )
μm
Measurement site size
mm
Warp
μm
Particles
diameter > 0.3 μm
pcs.
Front side treatment
Back side treatment
Laser marking
Packaging
*1
measured @ 22°C
measured according to DIN 50454-1: measurement at 9 sites
*3 other values upon request
*2
Freiberger
Values
150.0 ± 0.1
LEC
(1.0 ... 6.0) × 107
(8.5 ... 7.0) × 103
(0.3 ... 4.0) × 1015
(0.6 ... 4.0) × 108
(7.0 ... 4.5) × 103
(2.0 ... 10.0) × 1015
≤ 100 000
(1.2 ... 1.7) × 1016
± 0.5
2.0 ± 0.5
[010] ± 2°
90 +5/-1
1.00 +0.25/-0.00
675 ± 25
≤6
≤5
≤ 1.5
≤ 1.8
20 × 20
≤8
≤ 100
polished
polished
acc. SEMI M 12
cassette
100 mm SI VGF GaAs
Parameter
Unit
Diameter
mm
Crystal growth method
Resistivity *1
Ωcm
Hall mobility
cm2/ Vs
Carbon content
cm-3
Etch pit density *2
avg. value on wafer
cm-2
EL2 concentration
avg. value on wafer
cm-3
(100)-orientation
on
°
off towards (110) *3
°
Orientation (OF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
Identification (IF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
Thickness *3
μm
Total thickness variation (TTV)
μm
Total indicated reading (TIR)
μm
μm
Local focal plane deviation (LFPDmax )
Local thickness variation (LTVmax )
μm
Measurement site size
mm
Warp
μm
Particles
diameter > 0.3 μm
pcs.
Front side treatment
Back side treatment
Laser marking
Packaging
standard
option
*1
measured @ 22°C
measured according to DIN 50454-1: whole wafer mapping, site size 500 x 500 μm2
number of sites 27352, edge exclusion 3 mm
*3 other values upon request
*2
Freiberger
Values
100.0 ± 0.1
VGF
(0.8 ... 8.0) × 108
(7.5 ... 4.0) × 103
(1.0 ... 10.0) × 1015
≤ 5 000
(1.0 ... 1.5) × 1016
± 0.5
2.0 ± 0.5
32.5 ± 2.0
- ± 1°
[011]
- ± 1°
[01-1]
18.0 ± 2.0
[011] ± 5°
- ± 5°
[011]
625 ± 25
≤5
≤4
≤ 1.2
≤ 1.5
15 × 15
≤7
≤ 50
polished
polished
acc. SEMI T 5
cassette
single wafer container
100 mm SI LEC GaAs
Parameter
Unit
Diameter
mm
Crystal growth method
Option A
Resistivity *1
Ωcm
Hall mobility
cm2/ Vs
Carbon content
cm-3
Option B
Resistivity *1
Ωcm
Hall mobility
cm2/ Vs
Carbon content
cm-3
Etch pit density *2
avg. value on wafer
cm-2
EL2 concentration
avg. value on wafer
cm-3
(100)-orientation
on
°
off towards (110) *3
°
Orientation (OF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
Identification (IF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
*3
μm
Thickness Total thickness variation (TTV)
μm
Total indicated reading (TIR)
μm
Local focal plane deviation (LFPDmax )
μm
Local thickness variation (LTVmax )
μm
Measurement site size
mm
Warp
μm
Particles
diameter > 0.3 μm
pcs.
Front side treatment
Back side treatment
Laser marking
Packaging
standard
option
*1
measured @ 22°C
measured according to DIN 50454-1: measurement at 9 sites
*3 other values upon request
*2
Freiberger
Values
100.0 ± 0.1
LEC
(1.0 ... 6.0) × 107
(8.5 ... 7.0) × 103
(0.3 ... 4.0) × 1015
(0.6 ... 4.0) × 108
(7.0 ... 4.5) × 103
(2.0 ... 10.0) × 1015
≤ 100 000
(1.2 ... 1.7) × 1016
± 0.5
2.0 ± 0.5
32.5 ± 2.0
- ± 1°
[011]
- ± 1°
[011]
18.0 ± 2.0
[011] ± 5°
- ± 5°
[011]
625 ± 25
≤5
≤4
≤ 1.2
≤ 1.5
15 × 15
≤7
≤ 50
polished
polished
acc. SEMI T 5
cassette
single wafer container
100 mm SC VGF GaAs Si doped
Parameter
Unit
Diameter
mm
Crystal growth method
Dopant
Conductivity type
LASER grade
*1
-3
Carrier concentration cm Hall mobility *2
cm2/ Vs
LED grade
*1
-3
Carrier concentration cm Hall mobility *2
cm2/ Vs
Etch pit density *3 LASER grade A
avg. value on wafer
cm-2
LASER grade B
avg. value on wafer
cm-2
LASER grade C
avg. value on wafer
cm-2
LED grade
avg. value on wafer
cm-2
(100)-orientation
on
°
off towards (110) *7
°
Orientation (OF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
Identification (IF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
μm
Thickness *7
Total thickness variation (TTV)
μm
Total indicated reading (TIR)
μm
Warp
μm
Particles
diameter > 0.3 μm
pcs.
Front side treatment
Back side treatment
standard
option
Laser marking
Packaging
standard
option
*1
other ranges upon request
depending on doping level or carrier concentration
*3 measured according to DIN 50454-1: whole wafer mapping, site size 500 x 500 μm2
number of sites 27352, edge exclusion 3 mm
*4 corresponds to an EPD of 0 cm-2 on ≥ 85 % of wafer area
*5 corresponds to an EPD of ≤ 400 cm-2 on ≥ 90 % of wafer area
*6 corresponds to an EPD of ≤ 1200 cm-2 on ≥ 95 % of wafer area
*7 other values upon request
*2
Freiberger
Values
100.0 ± 0.1
VGF
Si
n
(0.8 ... 3.0) × 1018
(2.0 ... 1.5) × 103
(0.2 ... 2.5) × 1018
(2.5 ... 1.6) × 103
≤ 100 *4
≤ 250 *5
≤ 500 *6
≤ 3 000
± 0.5
2.0 ± 0.5
32.5 ± 2.0
- ± 1°
[011]
- ± 1°
[01-1]
18.0 ± 2.0
[011] ± 5°
- ± 5°
[011]
625 ± 25
≤ 15
≤ 10
≤ 10
≤ 80
polished
cut/etched
polished
acc. SEMI T 5
cassette
single wafer container
76.2 mm SC VGF GaAs Si doped
Parameter
Unit
Diameter
mm
Crystal growth method
Dopant
Conductivity type
LASER grade
*1
-3
Carrier concentration cm Hall mobility *2
cm2/ Vs
LED grade
*1
-3
Carrier concentration cm Hall mobility *2
cm2/ Vs
Etch pit density *3 LASER grade A
avg. value on wafer
cm-2
LASER grade B
avg. value on wafer
cm-2
LASER grade C
avg. value on wafer
cm-2
LED grade
avg. value on wafer
cm-2
(100)-orientation
on
°
off towards (110) *7
°
Orientation (OF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
Identification (IF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
Thickness *7
μm
Total thickness variation (TTV)
μm
Total indicated reading (TIR)
μm
Warp
μm
Particles
diameter > 0.3 μm
pcs.
Front side treatment
Back side treatment
standard
option
Laser marking
Packaging
standard
option
*1
other ranges upon request
depending on doping level or carrier concentration
*3 measured according to DIN 50454-1: whole wafer mapping, site size 500 x 500 μm2
number of sites 15196, edge exclusion 3 mm
*4 corresponds to an EPD of 0 cm-2 on ≥ 85 % of wafer area
*5 corresponds to an EPD of ≤ 400 cm-2 on ≥ 90 % of wafer area
*6 corresponds to an EPD of ≤ 1200 cm-2 on ≥ 95 % of wafer area
*7 other values upon request
*2
Freiberger
Values
76.2 ± 0.1
VGF
Si
n
(0.8 ... 3.0) × 1018
(2.0 ... 1.5) × 103
(0.2 ... 2.5) × 1018
(2.5 ... 1.6) × 103
≤ 100 *4
≤ 250 *5
≤ 500 *6
≤ 3 000
± 0.5
2.0 ± 0.5
22.2 ± 1.5
- ± 1°
[011]
- ± 1°
[01-1]
11.2 ± 1.5
[011] ± 5°
- ± 5°
[011]
450 ± 25
≤ 12
≤ 10
≤ 15
≤ 50
polished
cut/etched
polished
acc. SEMI T 5
cassette
single wafer container
76.2 mm SC LEC GaAs Te doped
Parameter
Unit
Diameter
mm
Crystal growth method
Dopant
Conductivity type
Carrier concentration *1
cm-3
Hall mobility *2
cm2/ Vs
Etch pit density *3
avg. value on wafer
cm-2
(100)-orientation
on
°
off towards (110) *4
°
Orientation (OF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
Identification (IF) flat
length
mm
SEMI-US
orientation
SEMI-EJ
orientation
Thickness *4
μm
Total thickness variation (TTV)
μm
Total indicated reading (TIR)
μm
Warp
μm
Particles
diameter > 0.3 μm
pcs.
Front side treatment
Back side treatment
standard
option
Laser marking
Packaging
standard
option
*1
other ranges upon request
depending on doping level or carrier concentration
*3 measured according to DIN 50454-1: measurement at 9 sites
*4 other values upon request
*2
Freiberger
Values
76.2 ± 0.1
LEC
Te
n
(0.05 ... 2.5) × 1018
(4.5 ... 2.3) × 103
≤ 70 000
± 0.5
2.0 ± 0.5
22.2 ± 1.5
- ± 1°
[011]
- ± 1°
[01-1]
11.2 ± 1.5
[011] ± 5°
- ± 5°
[011]
450 ± 25
≤ 12
≤ 10
≤ 15
≤ 50
polished
cut/etched
polished
acc. SEMI T 5
cassette
single wafer container