Patent Monitoring
Report
Patent Information Specialist: Åsa Fohlin
Your ref: KRef231
Your guide through the patents of the world.
P.O. Box 5055, SE-102 42 Stockholm, Sweden
Phone +46 8 782 28 85, Fax +46 8 783 01 63
E-mail: [email protected], www.prv.se/ip
Monitoring result
On the following pages the result of Your monitoring request with our ref. 520016 is presented.
The result is valid for Mars, 2017.
The report is compiled by the patent information specialist in service (see above).
The Evaluation is produced by patent examiner: Patrik Erixon.
About Patent Monitoring
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patent databases available, with comprehensive international coverage and with all abstracts translated
into English.
Report
The report contains references to the latest period’s newly published patent documents retrieved with Your
search profile, with bibliographic data, abstracts and figures. Access to patent documents is provided as
links to the database Espacenet, where You can find information about geographical coverage and legal
status, as well as EPO’s translation tool.
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we need information from You in order to update changes in company data, such as a new company
name or company mergers.
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
Trend analysis – we present the result graphically with tables and diagrams.

Evaluation – a patent examiner evaluates the result according to Your criteria and categorizes the
documents with the relevance codes 1 (document of particular importance) and 2 (document
mentioning the state of the art).
2(27)
References – Overview
Follow the links in the patent numbers to Espacenet, where original documents, legal status and patent family information (INPADOC) are available. If You have
requested our Evaluation service, relevance codes 1 (Document of particular relevance) and 2 (Document showing the state of the art) are used in the categorization.
Ref
Publication Numbers
Figure
Title
Relevance
1/10
US7999747B1 [+0]
Radio frequency phasing system for use with alternative
current or direct current plasma microdischarge antenna
device, has control circuitry dynamically varying size of
ionized cell
1
IMAGING SYSTEMS TECHNOLOGY
2/10
US2010327927A1
[+16]
Method for controlling pulsed power such as radio
frequency (RF) power involves correlating second signal
to data to minimize amplitude difference between peak of
second pulse and stable portion of second pulse
1
MKS INSTR INC
3(27)
Applicant Name
Ref
Publication Numbers
Figure
Title
Relevance
3/10
US2008066369A1 [+3]
Float to position fishing line with tackle gear like baited
hook for use in e.g. casting and trolling equipment, has
ogive-shaped body with several fluted ribs for providing
additional stability to float in water
1
IFISH INC
4/10
US2005023697A1 [+2]
Integrated-memory-circuit assembly includes two copper-,
silver-, or gold-based wiring levels, each has portion
coupled to respective transistor regions and the first
wiring level and diffusion-barrier lining and defining plane
1
MICRON TECHNOLOGY INC
4(27)
Applicant Name
Ref
Publication Numbers
Figure
Title
Relevance
5/10
US2004219773A1
[+15]
Forming conductive line for semiconductor device, e.g.
dynamic random access memory and metal oxide
semiconductor field effect transistor device, involves
feeding carbon-containing gas on electrode via contact
hole
1
SAMSUNG ELECTRONICS CO LTD
6/10
US6316360B1 [+0]
Contact interface formation in semiconductor device
manufacture, involves depositing conductive material in
bottom corner of contact opening so that material covers
portion of side wall and bottom surface adjacent corner
1
MICRON TECHNOLOGY INC
5(27)
Applicant Name
Ref
Publication Numbers
Figure
Title
Relevance
7/10
US5296292A [+5]
Fly-fishing line having lower frictional coefft. - comprises
tensile strength filamentary core surrounded by extruded
porous PTFE
1
GORE & ASSOC INC W L
8/10
US4993395A [+5]
High-voltage opto-electronic switching circuit - including
stack of disk semiconductor chips assembled in array
serially connected whereby only single LED controls
number chips
1
BOSCH GMBH ROBERT
6(27)
Applicant Name
Ref
Publication Numbers
9/10
GB2013846A [+1]
10/10
US3996019A [+6]
Figure
Title
Relevance
Applicant Name
Domestic hot water boiler heat exchanger - has coil and
end plate unit to increase contact area of heating coil to
heated water
1
COSYBUG LTD
Metal parts of complex shape, esp titanium alloys - where
sheets are shaped in a die by high pressure gas, then
diffusion bonded
1
GENERAL ELECTRIC CO
7(27)
References – Details
Follow the links in the patent numbers to Espacenet, where original documents, legal status and patent
family information (INPADOC) are available. If You have requested our Evaluation service, relevance
codes 1 (Document of particular relevance) and 2 (Document showing the state of the art) are used in the
categorization.
All rights reserved. No part of this database may be reproduced or transmitted, in
any form or by any means, or stored in any retrieval system of any nature, without
the prior written permission of Clarivate Analytics, (C) 2017.
1/10
(C) WPI / Clarivate Analytics
Relevance 1
Comment by If You have ordered our Evaluation service, the patent examiner will categorize the document with
Examiner relevance code and when appropriate write a comment in this field.
Accession Number 2011-K44029
Application Data US20080120742 20080515; [Provisional] US20070938037P 20070515
Priority Data US20080120742 20080515; US20070938037P 20070515
Title Radio frequency phasing system for use with alternative current or direct current plasma
microdischarge antenna device, has control circuitry dynamically varying size of ionized cell
Inventor Name PAVLISCAK T J; PETERS E F; WEDDING C A
Applicant Name (IMAG-N) IMAGING SYSTEMS TECHNOLOGY
Publication US7999747 B1 20110816 DW201155
Numbers
IPC - Advanced H01Q1/26; H01Q15/02
level - Invention
Abstract NOVELTY : The system has a reflective unit for reflecting energy of an incident radio frequency
beam within a frequency range. A phasing arrangement of a microdischarge structure is coupled
to the reflective unit, where the microdischarge structure comprises a microcavity plasma cell
containing ionizable gas (720). A control circuitry dynamically varies size of an ionized cell such
that phase shift imparted on the reflected radio frequency beam dynamically varies, so that the
reflected radio frequency beam is electronically scanned. USE : Radio frequency phasing
system for use with an alternative current or direct current plasma microdischarge antenna device
for electromagnetically emulating a desired reflective surface i.e. parabolic reflector (claimed), of
selected geometry over operating frequency range. ADVANTAGE : The system ensures that a
plasma microdischarge antenna device can accommodate a flexible back plane structure as the
device cells allow simple interconnect. DESCRIPTION OF DRAWINGS : The drawing shows a
sectional view of an open cell structure microdischarge antenna device built on a silicon substrate
containing an active backplane. 720 : Microcavity plasma cell containing ionizable gas 722 :
Silicon cathode 723 : Conductive anode 724 : Electrically isolating silicon 725 : Dielectric layer
8(27)
9(27)
2/10
(C) WPI / Clarivate Analytics
Relevance 1
Comment by If You have ordered our Evaluation service, the patent examiner will categorize the document with
Examiner relevance code and when appropriate write a comment in this field.
Accession Number 2011-A11832
Application Data US20090491538 20090625; TW20100119323 20100614; CN20108037077 20100616;
DE201011002708 20100616; WO2010US38790 20100616; [PCT Application]
WO2010US38790 20100616; SG20110009583 20100616; JP20120517580 20100616;
KR20127001954 20100616; GB20120001091 20120124; [PCT Nat. Entry] KR20127001954
20120125; [Previous Publ JP2012531880 A 20121210]; [Previous Publ KR20140022335 A
20140224]; [Based on WO2010151466 A 20101229]
Priority Data US20090491538 20090625
Title Method for controlling pulsed power such as radio frequency (RF) power involves correlating
second signal to data to minimize amplitude difference between peak of second pulse and stable
portion of second pulse
Inventor Name AMBROSINA J E; BENZERROUK S; BYSTRYAK I; BYSTRYAK I M D; LAM D; MENZER D;
NAGARKATTI S; NAGARKATTI S P; RASHID A; SCHUSS J J; TIAN F
Applicant Name (MKSI ) MKS INSTR INC
Publication US2010327927 A1 20101230 DW201106
Numbers WO2010151466 A2 20101229 DW201106
TW201110827 A 20110316 DW201153
WO2010151466 A3 20111117 DW201175
CN102484396 A 20120530 DW201243
DE112010002708T T5 20120705 DW201248
GB2487829 A 20120808 DW201252
JP2012531880 A 20121210 DW201281
SG176979 A1 20120228 DW201406
US8659335 B2 20140225 DW201415
KR20140022335 A 20140224 DW201417
CN102484396B B 20150211 DW201524
SG176979 B 20140912 DW201532
JP5726183B B2 20150527 DW201535
KR101571433B B1 20151124 DW201611
TWI507092B B 20151101 DW201615
GB2487829 B 20160615 DW201640
IPC - Advanced G05F1/66; H02J17/00; H02M3/00; H02M7/48; H03K3/00; H03K3/84; H05H1/18
level - Invention
Designated States AE AG AL AM AO AT AU AZ BA BB BG BH BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK
(National) DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IS JP KE KG KM KN KP
KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM
PE PG PH PL PT RO RS RU SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA
UG US UZ VC VN ZA ZM ZW
Abstract NOVELTY : The method for controlling pulsed power involves measuring a first pulse of delivered
power from a power amplifier to obtain data. A first signal for adjusting a second pulse of
delivered power and a second signal for adjusting the second pulse of delivered power are
generated. The first signal is correlated to the data to minimize a power difference between a
power set point and a stable portion of the second pulse. The second signal is correlated to the
data to minimize an amplitude difference between a peak of the second pulse and the stable
portion of the second pulse. DETAILED DESCRIPTION : INDEPENDENT CLAIMS are also
10(27)
included for the following: (1) Power delivery method; and (2) System for delivering pulsed or
continuous-wave RF power to a load. USE : Method for controlling pulsed power such as RF
power for industrial and commercial applications, such as but not limited to, in semiconductor
manufacturing, solar cell manufacturing, or other plasma etch industrial applications.
ADVANTAGE : Increases process throughput e.g. lower cost per workpiece and improved
process control e.g. higher yield in industrial and commercial applications by achieving plasma
processing capability. Allows reduction of electron bombardment, charging, and damage such as
notching, micro-trenching, or etch pits to devices on substrates such as workpieces, without
reducing throughput in plasma processing. Provides higher thin film deposition rate and improved
film materials properties in plasma enhanced chemical vapor deposition (PECVD) and ionized
PVD (iPVD) processes by independent control of electron energy and temperature, average ion
energy, ion energy distribution (lED), total ion flux, and reduced heat flux to the substrate.
Enables independent, simultaneous optimization of the conflicting plasma process requirements.
DESCRIPTION OF DRAWINGS : The drawing shows the schematic block diagram of the RF
power delivery system. 104 : Voltage source 112 : Power amplifier 120 : Matching network 124
: Load 152 : Mixer
11(27)
3/10
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Relevance 1
Comment by If You have ordered our Evaluation service, the patent examiner will categorize the document with
Examiner relevance code and when appropriate write a comment in this field.
Accession Number 2008-C36562
Application Data WO2007US14062 20070615; [Provisional] US20060814035P 20060615; TW20070121893
20070615; US20070763582 20070615
Priority Data US20060814035P 20060615; US20070763582 20070615
Title Float to position fishing line with tackle gear like baited hook for use in e.g. casting and trolling
equipment, has ogive-shaped body with several fluted ribs for providing additional stability to float
in water
Inventor Name WALTER R
Applicant Name (IFIS-N) IFISH INC (WALT-I) WALTER R
Publication WO2007146419 A2 20071221 DW200817
Numbers WO2007146419 A3 20080228 DW200817
US2008066369 A1 20080320 DW200822
TW200824559 A 20080616 DW200923
IPC - Advanced A01K91/08; A01K93/00; A01K93/02; A01K97/04
level - Invention
Designated States AT BE BG BW CH CY CZ DE DK EA EE ES FI FR GB GH GM GR HU IE IS IT KE LS LT LU LV
(Regional) MC MT MW MZ NA NL OA PL PT RO SD SE SI SK SL SZ TR TZ UG ZM ZW
Designated States AE AG AL AM AT AU AZ BA BB BG BH BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM
(National) DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IS JP KE KG KM KN KP KR
KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM
PG PH PL PT RO RS RU SC SD SE SG SK SL SM SV SY TJ TM TN TR TT TZ UA UG US UZ
VC VN ZA ZM ZW
Abstract NOVELTY : The float (100) has an ogive-shaped body made of e.g. an elastomer, with two ends
(102,104) and a bore (105) through which a length of fishing line is passed. On the lateral surface
of the body are provided several fluted ribs (106-1-106-5) and channels (108-1-108-3) to add
stability to the float in water. Micro-holes (112-1-112-5) are provided at several places on the float
for the purpose of e.g. releasing gas pressure, venting out scents to attract fish, or holding LEDs,
etc. USE : Casting and trolling equipment for positioning fishing line and placement of tackle
gear e.g. baited hooks and lures at desired water depth. ADVANTAGE : The ribs add stability to
the float, reduce the tendency to spin and improve the tracking, particularly in fast moving water
e.g. during trolling. The grooves between the ribs provide locations for holding the bait and allow
slow release of the bait scent to attract game fish. The fluted ribs also increase the volume of the
float per specific mass, so that the natural drifting of the float is improved to match the current
speed of the surrounding water, mimicking the natural bait. The increased volume-weight ratio of
the fluted ribs enables reduced splash and improved softness for presentation when the float is
cast into rocks, etc. The micro-holes on the body serve several purposes e.g. enabling release of
gas pressure during molding, holding light sources such as LEDs or fluorescent/luminescent gels
and liquids, carrying scent materials such as releasable fishing oils and scents e.g. of molasses,
etc. that attract fish. DESCRIPTION OF DRAWINGS : The figure shows a perspective view of
the float device. 100 : Float 102,104 : Ends of float 105 : Bore 106-1-106-2 : Fluted ribs
108-1-108-3 : Channels 112-1-112-5 : Micro-holes
12(27)
13(27)
4/10
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Relevance 1
Comment by If You have ordered our Evaluation service, the patent examiner will categorize the document with
Examiner relevance code and when appropriate write a comment in this field.
Accession Number 2005-150914
Application Data [Div Ex] US20000484303 20000118; US20040931541 20040831; [Cont of] US20000484303
20000118; US20060457099 20060712; [Cont of US7262130 B 00000000]
Priority Data US20040931541 20040831; US20000484303 20000118; US20040931541 20040831;
US20060457099 20060712
Title Integrated-memory-circuit assembly includes two copper-, silver-, or gold-based wiring levels,
each has portion coupled to respective transistor regions and the first wiring level and diffusionbarrier lining and defining plane
Inventor Name AHN K Y; FORBES L
Applicant Name (MICR-N) MICRON TECHNOLOGY INC
Publication US2005023697 A1 20050203 DW200516
Numbers US7253521 B2 20070807 DW200753
US7402516 B2 20080722 DW200850
IPC - Advanced H01L21/285; H01L21/441; H01L21/4763; H01L21/768
level - Invention
Abstract NOVELTY : Integrated-memory-circuit assembly includes a first copper-, silver-, or gold-based
wiring level having first portion(s) coupled to transistor regions. A second copper-, silver-, or goldbased wiring level has second portion(s) coupled and attached to the first wiring level. The first
and the second portions have a first and a second diffusion-barrier (226) lining and defining a
horizontal first and second plane, respectively. DETAILED DESCRIPTION : Integrated-memorycircuit assembly comprises a surface having transistor region(s). A first copper-, silver-, or goldbased wiring level has first portion(s) coupled to the transistor regions. A second copper-, silver-,
or gold-based wiring level has second portion(s) coupled and attached to the first wiring level. The
first and the second portions have a first and a second diffusion-barrier lining and defining a
horizontal first and second plane, respectively. The first plane and the surface bound a portion of
a first insulative region. The first and second planes bound a portion of a second insulative region
that is continuously formed with the first insulative region. USE : As integrated-memory-circuit
assembly. ADVANTAGE : The inventive assembly has a low-resistance diffusion barrier on the
wiring levels in a single formation process and fills insulative material around and between the
wiring levels in a single fill process. It can be fabricated in simple fabrication process.
DESCRIPTION OF DRAWINGS : The figure is a cross-sectional view of an integrated-circuit
assembly. 218, 222 : Conductive structure 224<'> : Space 226 : Diffusion barrier
ELECTRONICS : Preferred Assembly: Each insulative region comprises aerogel or xerogel. The
second wiring level is coupled to the first wiring level via a vertical conductor. The diffusion barrier
provides continuous multi-level coverage of the first wiring level, the vertical conductor, and the
second wiring level. A continuously formed insulation surrounds the first and second wiring levels
and the vertical conductor. The diffusion barrier has a first continuous portion completely
encircling the first wiring level, a second continuous portion completely encircling the second
wiring level, a third continuous portion completely encircling a first vertical conductor, and a fourth
continuous portion completely encircling a second vertical conductor. INORGANIC CHEMISTRY :
Preferred Component: The diffusion-barrier lining comprises nitrided and graded composition of
tungsten silicide (WSix, where x is 2-2.5). The first and second wiring levels and the vertical
conductor comprises copper-, silver-, or gold-based material. ORGANIC CHEMISTRY :
Preferred Component: The diffusion-barrier lining comprises nitrided and graded composition of
tungsten silicide (WSix, where x is 2-2.5). The first and second wiring levels and the vertical
14(27)
conductor comprises copper-, silver-, or gold-based material.
15(27)
5/10
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Relevance 1
Comment by If You have ordered our Evaluation service, the patent examiner will categorize the document with
Examiner relevance code and when appropriate write a comment in this field.
Accession Number 2004-768372
Application Data EP20040252117 20040408; KR20030028000 20030501; [Div Ex] KR20030028000 20030501;
CN20041034828 20040415; US20040835044 20040430; [Div Ex] US20040835044 20040430;
JP20040137261 20040506; [Div Ex] JP20040137261 20040506; US20050258037 20051026;
JP20090233559 20091007; KR20100006502 20100125; [Previous Publ JP2004336054 A
20041125]; [Previous Publ JP2010004087 A 20100107]; [Previous Publ KR20040094065 A
20041109]; [Previous Publ KR20100012894 A 20100208]; [Div ex US7060543 B 20060613]
Priority Data KR20030028000 20030501; KR20100006502 20100125
Title Forming conductive line for semiconductor device, e.g. dynamic random access memory and
metal oxide semiconductor field effect transistor device, involves feeding carbon-containing gas
on electrode via contact hole
Inventor Name BAE E; BAE E J; CHOI W; CHOI W B; HORII H; HORIIHIDEKI
Applicant Name (SMSU ) SAMSUNG ELECTRONICS CO LTD (BAEE-I) BAE E (CHOI-I) CHOI W (HORI-I)
HORII H
Publication EP1473767 A2 20041103 DW200476
Numbers US2004219773 A1 20041104 DW200476
JP2004336054 A 20041125 DW200477
CN1542920 A 20041103 DW200514
KR20040094065 A 20041109 DW200519
US2006046445 A1 20060302 DW200617
US7060543 B2 20060613 DW200639
US7247897 B2 20070724 DW200749
CN100369205C C 20080213 DW200833
JP2010004087 A 20100107 DW201003
KR20100012894 A 20100208 DW201015
KR100982419B B1 20100915 DW201064
KR100015507B B1 20110222 DW201117
JP4777619B B2 20110921 DW201161
EP1473767 B1 20120509 DW201231
JP5264672B B2 20130814 DW201354
IPC - Advanced B82Y10/00; B82Y40/00; C01B31/02; G11C13/02; H01L21/00; H01L21/26; H01L21/28;
level - Invention H01L21/285; H01L21/302; H01L21/3205; H01L21/336; H01L21/44; H01L21/461;
H01L21/479; H01L21/768; H01L21/8239; H01L21/84; H01L23/52; H01L23/522; H01L23/532;
H01L27/105; H01L27/24; H01L29/76; H01L29/78; H01L29/84; H01L31/062; H01L31/113;
H01L31/119
IPC - Advanced H01L23/485
level - Additional
Designated States AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IT LI LT LU LV MC MK NL PL
(Regional) PT RO SE SI SK TR
Abstract NOVELTY : Forming conductive line for semiconductor device comprises: (a) forming active
electrode surface; (b) forming insulating layer on the surface of the electrode; (c) forming
contact hole in the insulating layer in a way that part of the active surface of the electrode is
exposed outside; and (d) feeding carbon-containing gas on the active surface of the electrode
via the contact hole to grow a carbon nanotube on active surface of electrode. DETAILED
16(27)
DESCRIPTION : Forming conductive line for semiconductor device comprises: (a) forming
active electrode surface; (b) forming insulating layer (130) on the surface of the electrode (120);
(c) forming contact hole (132) in the insulating layer in a way that part of the active surface of the
electrode is exposed outside; and (d) feeding carbon-containing gas on the active surface of the
electrode via the contact hole to grow a carbon nanotube (140) on active surface of electrode.
The carbon nanotube forms the conductive line. The forming of active electrode surface is carried
out by activating surface of or by forming a catalytic layer on electrode of semiconductor device
using surface pre-treatment. An INDEPENDENT CLAIM is included for semiconductor device
comprising substrate (110), electrode on substrate, porous active layer (122) or catalytic metal
layer on surface of electrode, insulating layer with contact hole formed on the active layer to
expose part of the active layer, carbon nanotube grown on the active layer in the contact hole and
forms conductive line as pathway for electron migration, and memory thin film on the insulating
layer and electrically connected to the carbon nanotube. USE : Forming conductive line for
semiconductor device e.g. dynamic random access memory (DRAM) device, static RAM,
magnetic RAM, phase change RAM and metal oxide semiconductor field effect transistor.
ADVANTAGE : Provides high current density even at width smaller than those of the metal
conductive lines. DESCRIPTION OF DRAWINGS : The figure shows a section of the method
using carbon nanotube.
110 : Substrate
120 : Electrode
122 : Active
layer
130 : Insulating layer
132 : Contact hole
140 : Carbon nanotube
ELECTRONICS : Preferred Methods: The active electrode surface is made by activating
surface of the electrode. The surface of the electrode is activated in porous state by feeding pretreatment gas on electrode surface at 300-700[deg]C or by colliding ionized argon or nitrogen gas
with electrode surface. The first step is carried out at room temperature. The active electrode
surface is made by forming catalytic layer on the surface of the electrode. The catalytic metal
layer is made by depositing catalytic metal in a thickness on the electrode surface using radio
frequency magnetron sputter or e-beam evaporator. The catalytic metal can also be formed by
spraying a catalytic metal powder in a thickness on the electrode surface. The insulating layer is
anisotropic-etched using patterned photoresist as an etching mask to form contact hole. The third
step is carried out at 500-900[deg]C. The third step is carried out by thermal chemical vapor
deposition or plasma enhanced chemical vapor deposition. Preferred Components: The pretreatment gas is nitrogen, argon or ammonia gas. The activated surface of the electrode is formed
with a thickness of several nm to several tens nm. The catalytic metal is made of transition metal.
The transition metal is tungsten, nickel, iron, cobalt, yttrium, palladium, platinum or gold. The
insulating layer is made of oxide. The contact hole is made with the size several nm to several
tens nm in diameter. The carbon-containing gas is methane, ethylene, ethane, ethyl, carbon
monoxide or carbon dioxide. The carbon-containing gas is fed together with hydrogen, nitrogen or
argon. The semiconductor has porous active layer on the surface of electrode and catalytic metal
layer on a surface of electrode. The substrate is made of silicon or oxide. The electrode is source
electrode of metal oxide semiconductor field effect transistor. The memory thin film is made of
phase-change material.
17(27)
18(27)
6/10
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Examiner relevance code and when appropriate write a comment in this field.
Accession Number 2002-054591
Application Data [Div Ex] US19980063516 19980421; US19980150445 19980909
Priority Data US19980150445 19980909; US19980063516 19980421
Title Contact interface formation in semiconductor device manufacture, involves depositing conductive
material in bottom corner of contact opening so that material covers portion of side wall and
bottom surface adjacent corner
Inventor Name BURTON R D; GIVENS J H
Applicant Name (MICR-N) MICRON TECHNOLOGY INC
Publication US6316360 B1 20011113 DW200207
Numbers
IPC - Advanced H01L21/285; H01L21/8242
level - Invention
IPC - Advanced H01L23/485
level - Additional
Abstract NOVELTY : Contact opening (108) is created such that it extends through dielectric layer (106)
and a continuous bottom corner is formed where the side wall and the bottom surface intersect.
Conductive material is deposited along bottom corner by high pedestal bias power ionized metal
plasma (IMP) process, such that the material covers only a portion of side wall and a bottom
surface adjacent to the corner. DETAILED DESCRIPTION : INDEPENDENT CLAIMS are also
included for the following: (a) contact formation method; and (b) dynamic random access
memory (DRAM) chip formation method. USE : The method is used in manufacturing of
semiconductor integrated circuit e.g. DRAM chip (claimed). ADVANTAGE : The conductive
material is deposited such that it forms effective contact of silicide with the active device region
with no penetration of layer downward past the active device region, thereby assisting in reducing
or eliminating junction leakage of current into underlying substrate. DESCRIPTION OF
DRAWINGS : The figure shows a cross-sectional view of semiconductor device with contact
opening. 106 : Dielectric layer 108 : Contact opening
19(27)
20(27)
7/10
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Examiner relevance code and when appropriate write a comment in this field.
Accession Number 1992-113966
Application Data WO1991US06305 19910830; US19900576867 19900904; DE19910612066 19910830;
EP19910916374 19910830; JP19910515674 19910830; [Based on EP0547131 A 19930623];
[Based on WO9203922 A 19920319]
Priority Data US19900576867 19900904
Title Fly-fishing line having lower frictional coefft. - comprises tensile strength filamentary core
surrounded by extruded porous PTFE
Inventor Name BUTTERS L C
Applicant Name (GORE ) GORE & ASSOC INC W L
Publication WO9203922 A 19920319 DW199214
Numbers EP0547131 A1 19930623 DW199325
US5296292 A 19940322 DW199411
JPH06501749 A 19940224 DW199413
EP0547131 B1 19950809 DW199536
DE69112066E E 19950914 DW199542
IPC - Advanced A01K91/00; A01K91/12; B29C47/00; B29C47/02; D01F8/10; D02G3/36; D02G3/44;
level - Invention D06M15/256
IPC - Advanced D06M101/00; D06M101/16; D06M101/18; D06M101/30; D06M101/34
level - Additional
Designated States AT CH DE DK ES GB GR LU NL SE FR
(Regional)
Designated States JP
(National)
Abstract Elongated cylindrical tensile article has tensile strength core comprising one or more strands of
monfilament which is surrounded by a porous polytetrafluoroethylene layer. Pref the porous
PTFE has a microstructure of nodes interconnected by fibrils and it is extruded onto the core. It is
covered with a denser abrasion resistant layer. The PTFE may contain colour pigment. The
strands of monfilament are twisted, woven, or braided together and at least one strand is coated
with adhesive which is able to withstand and effectively function at temps. used in mfg. the line,
the adhesive being thermoplastic, esp. perfluoroalkoxy tetrafluoroethylene. The strands are esp.
surrounded as a unit by the adhesive. The strands of the core are esp. PTFE, carbon, glass
polycarbonate, polysulphone, polyphenol, polyamide, polyimide, or polyamide imide polymer.
USE/ADVANTAGE : The article is esp. a fly fishing line which can be cast a longer distance by a
fly rod because of its very low coefficient of friction. It can be high floating, made in various
colours, is supple so that it doesn't sag or droop between fly rod guides, and is hydrophobic so
that it can be lifted from the water with less splash and with little water pick-up.
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8/10
(C) WPI / Clarivate Analytics
Relevance 1
Comment by If You have ordered our Evaluation service, the patent examiner will categorize the document with
Examiner relevance code and when appropriate write a comment in this field.
Accession Number 1991-072409
Application Data US19900557207 19900724; DE19893935379 19891024; WO1990DE00696 19900912;
JP19900284516 19901024
Priority Data DE19893935379 19891024
Title High-voltage opto-electronic switching circuit - including stack of disk semiconductor chips
assembled in array serially connected whereby only single LED controls number chips
Inventor Name HERDEN W; VOGEL M
Applicant Name (BOSC ) BOSCH GMBH ROBERT
Publication US4993395 A 19910219 DW199110
Numbers DE3935379 A 19910425 DW199118
WO9107014 A 19910516 DW199122
FR2653499 A 19910426 DW199129
AU6347090 A 19910531 DW199135
JPH03171920 A 19910725 DW199136
IPC - Advanced F02P15/00; F02P7/03; H03K17/10; H03K17/78
level - Invention
Designated States AT BE CH DE DK ES FR GB IT LU NL SE
(Regional)
Designated States AU BR KR SU
(National)
Abstract In the appts. a stack of disc or plate-shaped semiconductor chips (9) is formed with the major
surfaces of the chips placed against each other and light responsive regions of the chips at the
outer surface to form an array of chips with a control surface (14). The light responsive regions
(13) are large enough so that, at any position of the respective chips in the array, the can receive
sufficient switching energy from a point source, such as a light emitting diode (17) (LED). Thus, a
single LED can control all the semiconductor switching elements. Energy for operation of the LED
can be obtained, directly, by connecting the LED across a capacitor (C) in series between the
ignition coil (4) and the high-voltage semiconductor switch (2), with an additional opto-electronic
switch (20, TH), controlled by a control circuit (16) which, when rnrd COnduCtiVe by the COntrOl
CirCuit, Will Cau e the LD (17) to fire. USE/ADVANTAGE : Reduced size of high-voltage
semiconductor optically responsive switch, for example suitable to control flow of ignition energy
from ignition ciol (4) to spark plug. Immune to external conditions.
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24(27)
9/10
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Relevance 1
Comment by If You have ordered our Evaluation service, the patent examiner will categorize the document with
Examiner relevance code and when appropriate write a comment in this field.
Accession Number 1979-H0220B
Application Data GB19780001218 19780112; GB19790000350 19790105
Priority Data GB19790000350 19790105; GB19780001218 19780112
Title Domestic hot water boiler heat exchanger - has coil and end plate unit to increase contact area of
heating coil to heated water
Inventor Name HARVEY J B
Applicant Name (COSY-N) COSYBUG LTD
Publication GB2013846 A 19790815 DW197933
Numbers GB2013846 B 19820603 DW198222
IPC - Advanced F24D3/08
level - Invention
Abstract Heat exchanger has a coil (6) in a housing (5) and an end plate (7) dividing inlet part (5A) of
housing from part (5B) containing coil. The end plate has apertures (8) adjacent a turn of the coil
at one end of the coil and apertures (9, 10) to allow water to pass inside and outside the coil. The
apertures (8) are arranged on a circle of the same diameter as the adjacent ciol turn while the
other apertures efficiently circulate hot water through the non-coil areas of the housing. The coil is
surrounded by cylindrical baffles (11, 12). Several heat exchangers may be connected in series.
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10/10
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Relevance 1
Comment by If You have ordered our Evaluation service, the patent examiner will categorize the document with
Examiner relevance code and when appropriate write a comment in this field.
Accession Number 1976-79414X
Application Data US19750569183 19750418; US19760653591 19760129; DE19762616448 19760414
Priority Data US19750569183 19750418; US19750569183 19750418; US19760653591 19760129
Title Metal parts of complex shape, esp titanium alloys - where sheets are shaped in a die by high
pressure gas, then diffusion bonded
Inventor Name COGAN R M
Applicant Name (GENE ) GENERAL ELECTRIC CO
Publication BE840684 A 19761013 DW197643
Numbers DE2616448 A 19761028 DW197645
US3996019 A 19761206 DW197651
FR2307614 A 19761216 DW197707
US4071183 A 19780131 DW197807
GB1540256 A 19790207 DW197906
IT1058915 B 19820510 DW198242
IPC - Advanced B21D26/02; B23K20/00; B23P13/00; B23P17/00
level - Invention
Abstract Process for mfg. an object part of which has a cross section with non-uniform thickness, starting
from several elements. The novelty is the use of the successive operations: (a) prepn. of several
mating elements of wheet metal and >=1 intermediate spacer; (b) each element has the shape
and dimensions to suit the object, and an assembly surface; (c) the elements are joined together
using the assembly surfaces and clamping the spacer(s); (d) diffusion in the solid state is used to
weld the elements together on their mating assembly surfaces. The elements are pref. deepdraqn. esp. from Ti or its alloys, and operation (d) is undertaken at 1-138 bars. Mfr. of metal parts
of complex shape, e.g. a gas rubine compressor casing in a Ti alloy, where the conventional
method starts with a forged blank of 400 kg to make a finished part with wt. 50 kg. i.e. very
wasteful in material and labour.
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