Photodiode
EPD-440-0-0.9
09.02.2017
rev. 08
Wavelength
Type
Technology
Case
UV
Schottky Contact
GaP
TO-18 + UV-glass
Description
+0,1
Ø 5,31
5,1 -0,1
+0,03
+0,025
Cathode
+0,05
-0,05
Ø 4,75 -0,1
Ø 4,22
Ø 5,33
Ø 0,44 -0,03
0,2 -0,025
2,54
Wide bandwidth and high spectral sensitivity in the
UV and visible range (190 nm - 570 nm), mounted
in hermetically sealed TO-18 package with UVglass window
Applications
Anode
Chip Location
+1,6
13,4 -1,6
0,23
+0,075
TO-46
Medical engineering (dermatology), output check
of UV - lamps and oil or gas burner flame,
measurement and control of ecological
parameters, radiation control for a solarium, UV
water purification facilities
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Test сonditions
Parameter
Symbol
Value
Unit
A
0,51
mm²
Temperature coefficient of ID
TC(ID)
7,0
%/K
Operating temperature range
Tamb
-40 to +125
°C
Storage temperature range
Tstg
-40 to +125
°C
2j
50
deg.
Typ
Max
Unit
Active area
Acceptance angle at 50% Sλ
1)
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Breakdown voltage
Dark current
Peak sensitivity wavelength
Responsivity at
P1)
Sensitivity range at 1%
1)
Sensitivity range at 1%
1)
Spectral bandwidth at 50%
Shunt resistance
1)
1)
Noise equivalent power
Specific detectivity
1)
1)
Switching time (RL = 50 Ω)
Photo current at  = 440 nm1,2)
2)
Symbol
Min
IR = 10 µA
VR
5
VR = 5 V
ID
5
VR = 0 V
p
440
nm
VR = 0 V
S
0,13
A/W
VR = 0 V
min
190
nm
VR = 0 V
max
570
nm
VR = 0 V
D0.5
180
nm
VR = 10 mV
RSH
 = 440 nm
1)
Junction capacitance1)
1)
Test conditions
NEP
V
0,10
100
20
125
7.7x10
pA
GW
-15
W/ Hz
 = 440 nm
D*
VR = 0 V
CJ
120
pF
VR = 5 V
tr , tf
1/10
ns
VR = 0 V
Ee
= 1 mW/cm²
IPh
0,65
µA
9.2x10
12
cm  Hz  W 1
for information only
measured with common halogen lamp source and appropriate filter
Note: All measurements carried out with JENOPTIK Polymer Systems equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer.
JENOPTIK Polymer Systems GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Photodiode
EPD-440-0-0.9
09.02.2017
rev. 08
Labeling
Type
Quantity
Lot N°
EPD-440-0-0.9
Responsivity spectrum (typical)
Short-circuit current vs. irradiance (typical)
1
2)
2
10
Short-circuit current (A)
0,01
0
10
-1
10
-2
10
-3
100
200
300
400
500
10
600
-2
-1
10
Wavelength  [nm]
0
10
1
10
2
Irradiance [mW/cm ]
2
10
10
Capacitance vs. reverse bias voltage (typical)
Dark current vs. ambient temperature (typical)
2
10
120
Junction Capacitance (pF)
100
1
Dark current (pA)
10
0
10
80
60
40
-1
10
20
-40
-20
0
20
40
Ambient temperature [°C]
60
0
80
2
4
6
8
10
12
14
16
18
20
Reverse Bias Voltage (V)
Shunt resistance vs. ambient temperature (typical),
relative to RSH @ Tamb = 25 °C and VR = 10 mV
Dark current vs. reverse voltage (typical)
2
10
10
1
Relative shunt resistance (a.u.)
10
Dark current (pA)
Sensivity [normalised]
1
10
0,1
1
0
10
-1
10
-2
10
-3
0.1
10
0.01
0.1
Reverse voltage (V)
1
10
-20
0
20
40
Ambient temperature (°C)
60
80
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer.
JENOPTIK Polymer Systems GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
2 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545