Publication list
Name: Alexandros GEORGAKILAS
Publications in refereed journals and proceedings of International Conferences:
A. Until 2004
- Papers
1.
“Growth of InxGa1-xAs on silicon by molecular beam epitaxy”, A. GEORGAKILAS, Z. Hatzopoulos,
A.A. Iliadis, and A. Christou, Materials Letters 7, pp. 456-460 (1989).
2.
“Defect structure of InxGa1-xAs/GaAs grown on misoriented (100) silicon by molecular beam
epitaxy”, A. Christou, N. Flevaris, A. GEORGAKILAS, and A.A. Iliadis, Materials Letters 8, pp. 109111 (1989).
3.
“Photoreflectance measurement of strain in epitaxial GaAs on silicon”, A. Dimoulas, P. Tzanetakis,
A. GEORGAKILAS, O.J. Glembocki, and A. Christou, J. Appl. Phys. 67, pp. 4389-4392 (1990).
4.
“Defect microstructure in laser-assisted modulation molecular-beam epitaxy GaAs on (100)
silicon”, A. Christou, J. Stoemenos, N. Flevaris, Ph. Komninou, and A. GEORGAKILAS, J. Appl. Phys.
68, pp. 3298-3302 (1990).
5.
“Photodetectors fabricated on heteroepitaxial GaAs/Si structures grown by molecular beam
epitaxy”, N.A. Papanicolaou, G.E. Anderson, J.A. Modolo, and A. GEORGAKILAS, Superlattices and
Microstructures 8, pp. 273-278 (1990).
6.
“TEM observations of GaAs/AlGaAs heteroepitaxial layers on (100)Si using a GaAs lift off
technique”, A. GEORGAKILAS, K. Tsagaraki, and A. Christou, Material Letters 10, pp. 525-531
(1991).
7.
“Optimization of GaAs-on-silicon MESFET structures”, G. Halkias, A. GEORGAKILAS, J.-Loic
Mourrain, and A. Christou, Solid St. Electron. 34, pp. 1157-1163 (1991).
8.
“Achievements and Limitations in Optimized GaAs Films Grown on Si by Molecular Beam Epitaxy”,
A. GEORGAKILAS, P. Panayotatos, J. Stoemenos, J.-L. Mourrain, and A. Christou, J. Appl. Phys. 71,
pp. 2679-2701 (1992).
9.
“Alloy clustering and defect structure in the molecular beam epitaxy of In0.53Ga0.47As on Silicon”, A.
GEORGAKILAS, A. Dimoulas, A. Christou, and J. Stoemenos, J. Mater. Research 7, pp. 2194-2204
(1992).
10.
“Optical properties of InGaAs films embedded in plasma etched InP wells”, A. GEORGAKILAS, K.
Zekentes, P. Lefebvre, J. Allegre, G. Halkias, and A. Christou, Appl. Phys. Lett. 61, pp. 798-800
(1992).
11.
“Influence of the desorption and growth temperatures on the crystalline quality of MBE InAlAs
layers”, F. Peiro, A. Cornet, A. Herms, J.R. Morante, A. GEORGAKILAS, and G. Halkias, J. Vac. Sci.
Technol. B10, pp. 2148-2152 (1992).
12.
“Asymmetric Fabry-Perot p-i-n multiple quantum well optical modulators grown on GaAs and
Silicon Substrates”, A. Dimoulas, K. Zekentes, E. Aperathitis, A. GEORGAKILAS, J. Leng, P.
Panayotatos, Z. Hatzopoulos, and A. Christou, Superlattices and Microstructures 12, pp. 145-149
(1992)
13.
“Electrical transport study of pseudomorphic heterostructures InGaAs/InAlAs on Si and InP
substrates”, K. Zekentes, A. GEORGAKILAS, M. Lagadas, K. Michelakis, A. Christou, J.M. Mercy, L.
Konczewicz, and J.L. Robert, Sensors and Actuators, A33, pp. 67-70 (1992)
14.
“Observation of metastable effects in pseudomorphic heterostructures InGaAs/InAlAs”, L.
Konczewicz, J.M. Mercy, M. Baj, J.R. Robert, K. Zekentes, A. GEORGAKILAS, G. Halkias, and A.
Christou, High Pressure Research 9, pp. 97-100 (1992)
15.
“Electric field dependence of allowed and forbidden transitions in InxGa1-xAs/In0.52Al0.48As single
quantum wells by room temperature modulation spectroscopy”, A. Dimoulas, J. Leng, K.P. Giapis,
A. GEORGAKILAS, G. Halkias, and A. Christou, Appl. Surf. Sci. 63, pp. 191-196 (1992)
16. “Microwave performance of GaAs-on-Si MESFETs with Si buffer layers”, A. GEORGAKILAS, G.Halkias,
A. Christou, C. Papavassiliou, G. Perantinos, G. Konstantinidis, and P. Panayotatos, IEEE Trans. Elect.
Dev. 40, pp. 507-512 (1993)
17. “A Comprehensive Optimization of InAlAs Molecular Beam Epitaxy for InGaAs/InAlAs HEMT
Technology”, A. GEORGAKILAS, G. Halkias, A. Christou, N. Kornilios, C. Papavassiliou, K. Zekentes, G.
Konstantinidis, F. Peiro, A. Cornet, S. Ababou, A. Tabata, and G. Guillot, J. Electroch. Soc. 140, pp.
1503-1509 (1993)
18. “Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular
beam epitaxy”, A. GEORGAKILAS, J. Stoemenos, K. Tsagaraki, Ph. Komninou, N. Flevaris, P.
Panayotatos, and A. Christou, J. Mater. Res. 8, pp. 1908-1921 (1993)
19. “Interband Transitions in InxGa1-xAs/In0.52Al0.48As Single Quantum Wells by Room Temperature
Modulation Spectroscopy”, A. Dimoulas, J. Leng, K.P. Giapis, A. GEORGAKILAS, C. Michelakis, and A.
Christou, Phys. Rev. B47, pp. 7198-7207 (1993)
20. “Quasi-periodic contrast inhomogeneities induced by clusters in the In0.52Al0.48As interface”, F. Peiro,
A. Cornet, J.R. Morante, A. GEORGAKILAS, and A. Christou, Appl. Phys. Lett. 62, pp. 2265-2267
(1993)
21. “Frequency Resolved Admittance Measurements on InAlAs/InGaAs/InAlAs Single Quantum Wells to
Determine the Conduction Band Offset and the Capture Coefficient”, J.M. Lopez-Villegas, P. Roura, J.
Bosch, J.R. Morante, A. GEORGAKILAS, and K. Zekentes, J. Electrochem. Soc. 140, pp. 1492-1495
(1993)
22. “Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells, S.
Moneger, Y. Baltagi, T. Benyattou, A. Tabata, B. Ragot, G. Guillot, A. GEORGAKILAS, K. Zekentes, and
G. Halkias, J. Appl. Phys. 74, pp. 1437-1439 (1993)
23. “Room temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs
layers grown on InP substrates”, S. Moneger, A. Tabata, C. Bru, G. Guillot, A. GEORGAKILAS, K.
Zekentes, and G. Halkias, Appl. Phys. Lett. 63, pp. 1654-1656 (1993)
24. “Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs
single quantum wells”, Y. Baltagi, S. Moneger, A. Tabata, T. Benyattou, C. Bru, A. GEORGAKILAS, K.
Zekentes, and G. Halkias, Appl. Surf. Sci. 63, pp. 172-176 (1993)
25. “Characterization
of lattice matched and strained GaInAs/AlInAs HEMT structures by
photoluminescence spectroscopy”, A. Tabata, T. Benyattou, G. Guillot, A. GEORGAKILAS, K. Zekentes,
and G. Halkias, Appl. Surf. Sci. 63, pp. 182-186 (1993)
26. “Interface defects and inhomogeneities induced by alloy clustering in InAlAs buffer layers grown on
InP”, F. Peiro, A. Cornet, J.R. Morante, A. GEORGAKILAS K. Zekentes, and G. Halkias, Appl. Surf. Sci.
65/66, pp. 447-454 (1993)
27. “Materials problems for the development of InGaAs/InAlAs HEMTs technology”, K. Zekentes, G.
Halkias, A. Dimoulas, A. Tabata, T. Benyattou, G. Guillot, J.R. Morante, F. Peiro, A. Cornet, A.
GEORGAKILAS, and A. Christou, Mater. Sci. Eng. B20, pp. 21-25 (1993)
28. “Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of
InAlAs layers grown on InP substrates”, S. Moneger, A. Tabata, C. Bru, G. Guillot, A. GEORGAKILAS,
K. Zekentes, and G. Halkias, Mater. Sci. Eng. B21, pp. 177-180 (1993)
29. “Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by
molecular beam epitaxy”, A. Kalboussi, G. Marrakchi, A. Tabata, G. Guillot, G. Halkias, K. Zekentes,
A. GEORGAKILAS, and A. Christou, Mater. Sci. Eng. B22, pp. 93-96 (1993)
30. “Electrical Transport Quantum Effects in the In0.53Ga0.47As/In0.52Al0.48As Heterostructure on Silicon”,
A. GEORGAKILAS, A. Christou, K. Zekentes, J.M. Mercy, L.K. Konczewicz, A. Vila, and A. Cornet, J.
Appl. Phys. 76, pp. 1948-1950 (1994)
31. “Effects of InGaAs/GaAs strained layer superlattices in optimized MBE GaAs-on-Si with Si buffer
layers”, A. GEORGAKILAS, and A. Christou, J. Appl. Phys. 76, pp. 7332-7338 (1994)
32. “Study of Schottky contact formation on CH4/H2 reactive-ion-etched InAlAs”, J. Kuzmik and A.
GEORGAKILAS, Semicond. Sci. Technol. 9, pp. 1226-1229 (1994)
33. “TEM analysis of InGaAs/InAlAs epitaxial layers grown over InP patterned substrates”, F. Peiro, A.
Cornet, J.R. Morante, K. Zekentes and A. GEORGAKILAS, Mater. Lett. 21, pp. 371-375 (1994)
34. “Contrast Modulations in InAlAs/InP”, F. Peiro, A. Cornet, J.R. Morante, A. GEORGAKILAS and A.
Christou, J. Elect. Mater. 23, pp. 969-974 (1994)
35. “Quantum wirelike induced morphology in InGaAs wells grown on InyAl1-yAs tensile buffer layers over
(100) InP vicinal surfaces”, F. Peiro, A. Cornet, J.R. Morante, A. GEORGAKILAS, C. Wood and A.
Christou, Appl. Phys. Lett. 66, pp. 2391-2393 (1995)
36. “Composition Inhomogeneities in the Buffer Layers of In0.52Al0.48As/InxGa1-xAs/InP Multiquantum Well
Structures Driven by In-Segregation”, F. Peiro, A. Cornet, J.R. Morante and A. GEORGAKILAS, J. Vac.
Sci. Techn. B13, pp. 1006-1009 (1995)
37. “Investigation of Si Substrate Preparation for GaAs-on-Si MBE Growth”, M. Kayambaki, R. Callec, G.
Constantinidis, Ch. Papavassiliou, E. Lochtermann, H. Krasny, N. Papadakis, P. Panayotatos and A.
GEORGAKILAS, J. Cryst. Growth 157, pp. 300-303 (1995)
38. “Electron density effects in the modulation spectroscopy of strained and lattice-matched
InGaAs/InAlAs/InP high-electron-mobility transistor structures”, A. Dimoulas, J. Davidow, K.P. Giapis,
A. GEORGAKILAS, G. Halkias and N. Kornelios, J. Appl. Phys. 80, pp.3484-3487 (1996)
39. “Effects of (100) Si Tilting Angle and Prelayer Conditions on GaAs/Si Heterostructures”, A.
GEORGAKILAS, Ch. Papavassiliou, G. Constantinidis, K. Tsagaraki, H. Krasny, E. Lochtermann and P.
Panayotatos, Appl. Surf. Sci 102, pp. 67-72 (1996)
40. “Heterojunction Diodes nGaAs/pSi with Ideal Characteristics”, E. Aperathitis, M. Kayiambaki, V.
Foukaraki, G. Halkias, P. Panayotatos and A. GEORGAKILAS, Appl. Surf. Sci. 102, pp. 208-211 (1996)
41. "Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on
(111)B InP substrates", N. Becourt, F. Peiro, A. Cornet, J.R. Morante, P. Gorostiza, G. Halkias, K.
Michelakis and A. GEORGAKILAS, Appl. Phys. Lett. 71, pp. 2961-2963 (1997)
42. “Silicon Substrate Optimization for Microwave Applications of GaAs/Si MESFETs”, Ch. Papavassiliou,
A. GEORGAKILAS, E. Aperathitis, H. Krasny, E. Lochtermann and P. Panayotatos, Mater. Sci. Eng. B44,
pp. 351-354 (1997)
43. "Investigation of the GaAs/Si Heterojunction Band Lineup with Capacitance and Current Versus
Voltage Measurements", A. GEORGAKILAS, E. Aperathitis, V. Foukaraki, M. Kayambaki and P.
Panayotatos, Mater. Sci. Eng. B44, pp. 383-386 (1997)
44. "Structural characterization of InGaAs/InAlAs quantum wells grown on (111)-InP substrates", A. Vila,
A. Cornet, J.R. Morante, A. GEORGAKILAS, G. Halkias and N. Becourt, Microelectronics Journal 28,
pp. 999-1003 (1997)
45. "Self-organization of quantum wire-like morphology on InxGa1-xAs single quantum wells grown on
(100)InP vicinal surfaces depending on the substrate misorientation, buffer mismatch and growth
temperature", F. Peiro, A. Cornet, J.R. Morante, G. Halkias and A. GEORGAKILAS, Microelectronics
Journal 28, p.p. 865-873 (1997)
46. "Potential use of the tendency of III-V alloys to separate for fabrication of low dimensionality
structures", A. GEORGAKILAS, K. Michelakis, G. Halkias, N. Becourt, F. Peiro and A. Cornet,
Microelectronic Engineering 41/42, pp. 583-587 (1998)
47. "Correlation between the sign of strain and the surface morphology and defect structure of InAlAs
grown on vicinal (111)B InP", A. GEORGAKILAS, K. Tsagaraki, K. Harteros, Z. Hatzopoulos, Anna Vila,
N. Becourt, F. Peiro, A. Cornet, N. Chrysanthakopoulos and M. Calamiotou, Thin Solid Films 336, pp.
218-221 (1998)
48. "TEM Investigation of the Dependence of Structural Defects on Prelayer Formation in GaAs-on-Si
Thin Films", Ch. B. Lioutas, A. Delimitis and A. GEORGAKILAS, Thin Solid Films 336, pp. 96-99 (1998)
49. "Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor
structures", J. Arbiol, F. Peiro, A. Cornet, J.R. Morante, K. Michelakis and A. Georgakilas, J. Vac. Sci.
Technol. B 17, pp. 2540-3544 (1999)
50. "Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates", A.
GEORGAKILAS, K. Michelakis, M. Kayambaki, K. Tsagaraki, E. Makarona, Z. Hatzopoulos, Anna Vila, N.
Becourt, F. Peiro, A. Cornet, N. Chrysanthakopoulos and M. Calamiotou, J. Crystal Growth 201/202,
pp. 248-251 (1999)
51. "Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111)B InP", C.
Michelakis, A. GEORGAKILAS, M. Androulidaki, K. Harteros, G. Deligeorgis, M. Calamiotou, F. Peiro,
N. Becourt, A. Cornet and G. Halkias, Mater. Sci. Eng. B 66, pp.181-184 (1999)
52. "Comparison of homogeneously grown and temperature-graded InAlAs buffers in the range 400-
560C: effects on surface morphology and layer stability", J. Arbiol, F. Peiro, A. Cornet, J.R. Morante,
K. Michelakis and A. GEORGAKILAS, Thin Solid Films 357, pp. 61-65 (1999)
53. "Influence of the MBE growth temperature on the properties of cubic GaN grown directly on GaAs
substrates", A. GEORGAKILAS, M. Androulidaki, K. Tsagaraki, K. Amimer, G. Constantinidis, N.T.
Pelekanos, M. Calamiotou, Zs. Czigany and B. Pecz, Phys. Stat. Sol. (a) 176, pp. 525-528 (1999)
54. "Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters", A.
GEORGAKILAS, K. Tsagaraki, E. Makarona, G. Constantinidis, M. Androulidaki, M. Kayambaki, E.
Aperathitis and N.T. Pelekanos, Materials Science in Semiconductor Processing 3, pp. 511-515
(2000)
55. "Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by
molecular beam epitaxy”, K. Amimer, A. GEORGAKILAS, K. Tsagaraki, M. Androulidaki, D. Cengher, L.
Toth, B. Pecz and M. Calamiotou, Appl. Phys. Lett. 76, pp. 2580-2582 (2000)
56. "Comparison of the signal latency in optical and electrical interconnections for inter-chip links", E.D.
Kyriakis-Bitzaros, N. Haralabidis, Y. Moisiadis, M. Lagadas, A. GEORGAKILAS and G. Halkias, Optical
Engineering 40, pp. 144-146 (2001)
57. "Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs
optoelectronic devices", E. Aperathitis, D. Cengher, M. Kayambaki, M. Androulidaki, G. Deligeorgis, K.
Tsagaraki, Z. Hatzopoulos and A. GEORGAKILAS, Mater. Sci. Eng. B 80, pp. 77-80 (2001)
58. "Evaluation of performance capabilities of emitters and detectors based on a common MQW
structure", D. Cengher, E. Aperathitis, M. Androulidaki, G. Deligeorgis, M. Kayambaki, K. Michelakis,
Z. Hatzopoulos, P. Tzanetakis and A. GEORGAKILAS, Mater. Sci. Eng. B 80, pp. 241-244 (2001)
59. "Study of the correlation between GaN material properties and the growth conditions of radio
frequency plasma-assisted Molecular Beam Epitaxy", K. Amimer, A. GEORGAKILAS, M. Androulidaki,
K. Tsagaraki, M. Pavelescu, S. Mikroulis, G. Constantinidis, J. Arbiol, F. Peiro, A. Cornet, M.
Calamiotou, J. Kuzmik and V. Yu. Davydov, Mater. Sci. Eng. B 80, pp. 304-308 (2001)
60. "MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates", A.
GEORGAKILAS, Zs. Czigany, K. Amimer, V. Yu. Davydov, L. Toth and B. Pecz, Mater. Sci. Eng. B 82,
pp.16-18 (2001)
61. "Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices
on Si using GaAs-Si wafer bonding", Z. Hatzopoulos, D. Cengher, G. Deligeorgis, M. Androulidaki, E.
Aperathitis, G. Halkias and A. GEORGAKILAS, J. Crystal Growth 227-228, pp. 193-196 (2001)
62. "Microstructural differences of the two possible orientations of (100) GaAs on vicinal (100) Si
substrates", M. Calamiotou, N. Chrysanthakopoulos, Ch. Lioutas, K. Tsagaraki and A. GEORGAKILAS,
J. Crystal Growth 227-228, pp. 98-103 (2001)
63. "Correlation of the structural and optical properties of GaN grown on vicinal (100) GaAs substrates
with the plasma-assisted MBE growth conditions", A. GEORGAKILAS, K. Amimer, P. Tzanetakis, Z.
Hatzopoulos, M. Cengher, B. Pecz, Zs Czigany, L. Toth, M.V. Baidakova, A.V. Sakharov and V.Yu.
Davydov, J. Crystal Growth 227-228, pp. 410-414 (2001)
64. "Realistic end-to-end simulation of the inter-chip optoelectronic links and comparison with the
electrical interconnections", E.D. Kyriakis-Bitzaros, N. Haralabidis, M. Lagadas, A. GEORGAKILAS, Y.
Moisiadis, and G. Halkias, IEEE J. Lightwave Technol. 19, pp. 1532-1542 (2001)
65. “The pinch-off behavior, charge distribution and current transport in AlGaN/GaN double
heterojunction HFETs”, M.Zervos, A.Kostopoulos, G.Constantinidis, M.Kayambaki, S.Mikroulis, N.
Flytzanis and A.GEORGAKILAS, Phys. Stat. Solidi (a) 188, pp. 259-262 (2001)
66. “Effects of the sapphire nitridation on the polarity and properties of GaN layers grown by plasma-
assisted MBE”, A. GEORGAKILAS, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, M.
Androulidaki, Ph. Komninou, Th. Kehagias and Th. Karakostas, Phys. Stat. Solidi (a) 188, pp. 567-570
(2001)
67. “Investigation of different Si (111) surface preparation methods for the heteroepitaxy of GaN by
plasma-assisted MBE”, M. Androulidaki, A. GEORGAKILAS, F. Peiro, K. Amimer, M. Zervos, K.
Tsagaraki, M. Dimakis and A. Cornet, Phys. Stat. Solidi (a) 188, pp. 515-518 (2001)
68. “Effect of High Temperature-Pressure on GaAs Layers Grown on Vicinal Si Substrates”, J. Bak-Misiuk,
E. Dynowska, A. Misiuk, M. Calamiotou, A. Kozanecki, J. Domagala, D. Kuristyn, W. Glukhanyuk, A.
GEORGAKILAS, J. Trela, J. Adamczewska, Cryst. Res. Technolol. 36, pp. 997-1003 (2001)
69. “Structural transition of inversion domain boundaries through interactions with stacking faults in
epitaxial GaN”, G. P. Dimitrakopulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, E. Sarigiannidou, A.
GEORGAKILAS, G. Nouet and Th. Karakostas, Phys. Rev. B 64, 245325 (2001)
70. “An investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double
heterostructures by self consistent Poisson-Schrödinger calculations and capacitance-voltage
profiling”, M. Zervos, A. Kostopoulos, G. Constantinidis, M.Kayambaki and A. GEORGAKILAS, J. Appl.
Phys. 91, pp. 4387-4393 (2002)
71. "Control of the polarity of molecular beam epitaxy grown GaN thin films by the surface nitridation of
Al2O3 (0001) substrates", S. Mikroulis, A. GEORGAKILAS, A. Kostopoulos, V. Cimalla, E. Dimakis and
Ph. Komninou, Appl. Phys. Lett. 80, pp. 2886-2888 (2002)
72. "Laser interferometry as a diagnostic tool for the fabrication of reactive ion etching-edge-emitting
lasers”, E. Aperathitis, Z. Hatzopoulos, A. GEORGAKILAS and L. Richeboeuf, J. Vac. Sci. Technol. B20,
pp. 1994-1999 (2002)
73. “Wafer-scale integration of GaAs optoelectronic devices with Si ICs using a low temperature bonding
procedure”, A. GEORGAKILAS, G. Deligeorgis, E. Aperathitis, D. Cengher, Z. Hatzopoulos, M. Alexe , V.
Dragoi, U. Gösele, E. D. Kyriakis-Bitzaros and G. Halkias, Appl. Phys. Lett. 81, pp. 5099-5101 (2002)
74. “Lateral Modulations in InAlAs/InP and InGaAs/InP systems”, F. Peiro, J.C. Ferrer, A. Cornet, M.
Calamiotou and A. GEORGAKILAS, Phys. Stat. Sol. (a) 195, pp. 32-37 (2003)
75. “Plasma-Assisted MBE Growth of Quaternary InAlGaN Quantum Well Heterostructures with Room
Temperature Luminescence”, E. Dimakis, A. GEORGAKILAS, M. Androulidaki, K. Tsagaraki, G. Kittler,
D. Cengher, E. Bellet-Amalric, D. Jalabert, N.T. Pelekanos, J. Cryst. Growth 251, pp. 476 - 480 (2003)
76. “Fabrication of GaAs laser diodes on Si using low temperature bonding of MBE grown GaAs wafers
with Si wafers”, D. Cengher, Z. Hatzopoulos, S. Gallis, G. Deligeorgis, E. Aperathitis, M. Androulidaki,
M. Alexe, V. Dragoi, E. D. Kyriakis-Bitzaros, G. Halkias and A. GEORGAKILAS, J. Cryst. Growth 251, pp.
754 – 759 (2003)
77. “Field-compensated quaternary InAlGaN/GaN quantum wells”, F. Kalaïtzakis, M. Androulidaki, N. T.
Pelekanos, E. Dimakis, E. Bellet-Amalric, D. Jalabert, D. Cengher, K. Tsagaraki, E. Aperathitis, G.
Konstantinidis, and A. GEORGAKILAS, Phys. Stat. Sol. (b) 240, pp. 301-304 (2003)
78. “Gallium Nitride-Based Potentiometric Anion Sensor”, N. A. Chaniotakis, Y. Alifragis, G. Konstantinidis
and A. GEORGAKILAS, Analytical Chemistry 76, pp. 5552-5556 (2004)
79. “ZrO2/(Al)GaN metal-oxide-semiconductor structures: characterization and application”, J. Kuzmík,
G. Constantinidis, S. Harasek, Š. Haščík, E. Bertagnolli, A. GEORGAKILAS and D. Pogany, Semicond.
Sci. Technol. 19, pp. 1364-1368 (2004)
80. “The role of nucleation temperature in In-face InN-on-GaN (0001) growth by plasma-assisted
molecular beam epitaxy”, E. Dimakis, G. Konstantinidis, K. Tsagaraki, A. Adikimenakis, E. Iliopoulos
and A. GEORGAKILAS, Superlatt. Microstruct. 36, pp. 497-507 (2004)
81. “Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE”, Ph. Komninou,
Th. Kehagias, A. Delimitis, G. P. Dimitrakopoulos, J. Kioseoglou, E. Dimakis, A. GEORGAKILAS and Th.
Karakostas, Superlatt. Microstruct. 36, pp. 509-515 (2004)
-
Proceedings
Publications in Journals publishing only special issues from international conferences
1.
“Switching speed enhancement of novel superlattice GaAs pin diodes”, Z. Hatzopoulos, A.
GEORGAKILAS, and A. Christou, J. Phys. Colloques 48, pp. C5-281-C5-284 (1987)
2.
“TEM Study of Inversion Antiphase Domain Boundaries on GaAs/Si interphase grown by MBE”, J.
Stoemenos, Ph. Komninou, Th. Karakostas, A. GEORGAKILAS, and A. Christou, Materials Science
Forum 126-128, 631 (1993)
3.
"Defects analysis in InAlAs/InGaAs heterostructures grown on (111) InP substrates", N. Becourt,
J.C. Ferrer, F. Peiro, A. Cornet, J.R. Morante, P. Gorostiza, G. Halkias, K. Michelakis and A.
GEORGAKILAS, Mater. Sci. Forum 258-263, pp. 1211-1215 (1997)
4.
"Interplay between planar defects and threading dislocations in GaAs-on-Si", A. Delimitis, Ch. B.
Lioutas, K. Michelakis and A. GEORGAKILAS, Material Science Forum 294/296, pp. 317-321
(1999)
5.
“Microstructure of GaN layers grown onto (001) and (111)GaAs substrates by molecular beam
epitaxy”, L. Toth, B. Pecz, Z. Czigany , K. Amimer, A. GEORGAKILAS, Mater. Sci. Forum 433-4, pp.
999-1002 (2002)
6.
“Optical Properties of InAlGaN Heterostructures Grown by RF-MBE”, M. Androulidaki, N. T.
Pelekanos, E. Dimakis, F. Kalaitzakis, E. Aperathitis, F. Bellet-Amalric, D. Jalabert , K. Tsagaraki,
and A. GEORGAKILAS, Phys. Stat. Solidi (c) 0, pp. 504-507 (2002)
7.
“Correlation between strain, optical and electrical properties of InN grown by MBE”, V. Cimalla, Ch.
Förster, G. Kittler, I. Cimalla, R. Kosiba, G. Ecke, O. Ambacher, R. Goldhahn, S. Shokhovets, A.
GEORGAKILAS, H. Lu, W. Schaff, Phys. Stat. Sol. (c), pp. 2818-2821 (2003)
Publications in Proceedings of International Conferences
1.
“Long and rapid thermal annealing of GaAs on Si”, M.N. Charasse, A. GEORGAKILAS, J. Chazelas,
J.P. Hirtz, H. Blanck, H. Heral, A. Rocher, J. Siejka, and C. Ortega, in Proceedings of E-MRS
Meeting, June 1987, Vol. XVI, pp. 343-351 (les Editions de Physique, Paris 1987)
2.
“Observation of GaAs/Si interface by TEM: Effect of annealing on the structure”, H. Heral, A.
Rocher, M.N. Charasse, A. GEORGAKILAS, J. Chazelas, J.P. Hirtz, H. Blanck, and J. Siejka, in “Epitaxy
of Semiconductor Layered Structures”, Mater. Res. Soc. Symp. Proceedings, Vol. 102, pp. 51-56
(MRS, Pittsburgh 1988), eds. R.T. Tung, L.R. Dawson and R.L. Gunshor
3.
“Heterostructures of GaAs and AlAs on silicon: X-ray analysis and excimer laser annealing”, A.
GEORGAKILAS, M. Fatemi, L. Fotiadis, and A. Christou, in “Heteroepitaxy on Silicon:
Fundamentals, Structures, and Devices”, Mat. Res. Soc. Symp. Proc., Vol. 116, pp. 279-282 (MRS,
Pittsburgh 1988), eds. H.K. Choi, R. Hull, H. Ishiwara and R.J. Nemanich
4.
“The influence of arsenic flux in the defect structure of MBE deposited GaAs and Ga1-xAlxAs”, Z.
Hatzopoulos, G. Kiriakidis, A. GEORGAKILAS N. Roditis, and A. Christou, in “Advanced Surface
Processes for Optoelectronics”, Mat. Res. Soc. Symp. Proc., Vol. 126, pp. 23-29 (MRS, Pittsburgh
1988), eds. S.L. Bernasek, T. Venkatesan and H. Temkin
5.
“The microstructure of GaAs/Si films studies as a function of heat treatment”, A. Rocher, H. Heral,
M.N. Charasse, A. GEORGAKILAS, J. Chazelas, J.P. Hirtz, H. Blanc, and J. Siejka, in “Evaluation of
Advanced Semiconductor Materials by Electron Microscopy”. (Proceedings of a NATO Advanced
Research Workshop, Bristol, UK, 12-17 Sept. 1988), NATO ASI Series, B: Physics, Vol. 203, pp. 347354 (Plenum, New York 1989), ed. D. Cherns
6.
“Comprehensive investigation of traps in GaAs/AlGaAs heterostructures and superlattices by
DLTS”, G. Papaioannou, G. Kiriakidis, A. GEORGAKILAS, and A. Christou, in “Advances in Materials,
Processing and Devices in III-V Compound Semiconductors”; Mater. Res. Soc. Symp.
Proceedings, Vol. 144, pp. 151-155 (MRS, Pittsburgh 1989), eds. D.K. Sadana, L.F. Eastman and R.
Dupuis
7.
“High Transconductance Laser Assisted Modulation MBE GaAs/Si Field Effect Transistors”, A.
Christou, N. Papanicolaou, A. GEORGAKILAS, J. Turner, and P. Panayotatos, in “16th Int. Symp. on
Gallium Arsenide and Related Comp., Kurizawa, Japan, Sept. 26-29, 1989” Institute of Phys.
Conf. Series, No. 106, pp. 207-212 (Institute of Physics, Bristol, UK 1989), eds. T. Ikoma and H.
Watanabe
8.
“Laser assisted molecular beam epitaxy (LAMBE) GaAs on silicon photodetectors”, N.A.
Papanicolaou, A. Christou, A. GEORGAKILAS, G.W. Anderson, J.A. Modolo, and F.J. Kub, in “16th
Int. Symp. on Gallium Arsenide and Related Comp., Kurizawa, Japan, Sept. 26-29, 1989” Inst. Phys.
Conf. Ser., No. 106, p. 917 (Institute of Physics, Bristol, UK 1989), eds. T. Ikoma and H. Watanabe
9.
“Photoreflectance measurement of strain in strained III-V semiconductor epitaxial layers”, A.
Dimoulas, P. Tzanetakis, Z. Hatzopoulos, A. GEORGAKILAS, O.J. Glembocki, and A. Christou, in
Proceedings of the “20th Intern. Conf. on the Physics of Semiconductors, Thessaloniki, Greece,
August 6-10, 1990”, Vol. 2, pp. 1069-1072 (World Scientifice, 1990), eds. E.M. Anastassakis and
J.D. Joannopoulos
10.
“Improved GaAs on Si properties using a combined GaAs and Si molecular beam epitaxy system”,
A. GEORGAKILAS, J. Stoemenos, C. Berge, C. Michelakis, C. Cason, M. Lagadas, Z. Hatzopoulos, and
A. Christou, Late News paper in “17th Int. Symp. on Gallium Arsenide and Rel. Comp., Jersey, UK,
Sept. 24-27, 1990”, Institute of Physics Conference Series, N. 112, p. 135 (Institute of Physics,
Bristol, UK1990), ed. K.E. Singer
11.
“MBE GaAs on Si: Material and Devices for Optical Interconnects”, P. Panayotatos, A.
GEORGAKILAS, J.-L. Mourrain, and A. Christou, in “Physical Concepts of Materials for Novel
Optoelectronic Device Applications I”, Proc. SPIE 1361, Part two, pp. 1100-1109 (SPIE,
Bellingham, Washington, 1990), ed. M. Razeghi
12.
“Molecular Beam Epitaxy of InGaAs on Si”, A. GEORGAKILAS, A. Dimoulas, G. Constantinidis, K.
Tsagaraki, J. Stoemenos, A.A. Iliadis, and A. Christou, Crystal Properties and Preparation, Vol. 3638, pp. 407-416 (1991); also in the Proceedings of the “3rd European Conference on Crystal
Growth (ECCG-3), Budapest, Hungary, 5-11 May, 1991”, Vol. 2 (ISBN 0-87849-545-2 - Trans Tech
Publications Inc., Switzerland, 1991), ed. A. Lorinczy
13.
“Confined states in InGaAs/InAlAs single quantum wells studied by room temperature
Phototransmittance and Electrotransmittance at high electric fields”, A. Dimoulas, A.
GEORGAKILAS, G. Halkias, C. Zekentes, C. Michelakis, and A. Christouin “18th Int. Symp. on GaAs
and Rel. Comp., Seattle, Washington, Sept. 9-12, 1991”. Inst. Phys. Conf. Series, No. 120, pp.
263-266 (Institute of Physics, Bristol, UK 1991), ed. G.B. Stringfellow
14.
“Dependence of the defects present in InAlAs/InP on the substrate temperature”, F. Peiro, A.
Cornet, A. Herms, J.R. Morante, A. GEORGAKILAS, and G. Halkias, in “Advanced III-V Compound
Semiconductor Growth, Processing and Devices”, Mater. Res. Soc. Symp. Proc., Vol. 240, pp.
189-194 (MRS, Pittsburgh, 1992), eds. S.J. Pearton, D.K. Sadana and J.M. Zavada
15.
“Optical studies of lattice matched and strained GaInAs/AlInAs single quantum wells”, A. Tabata,
S. Moneger, T. Benyattou, Y. Baltagi, G. Guillot, A. GEORGAKILAS, K. Zekentes, and G. Halkias, in
“Spectroscopic Characterization Techniques for Semiconductor Technology IV”, Proc. SPIE 1678,
pp. 89-95 (SPIE, Bellingham, Washington, 1992), ed. O.J. Glembocki
16.
“Suppression of the kink effect in InGaAs/InAlAs HEMTs grown by MBE by optimizing the InAlAs
buffer layer”, A. GEORGAKILAS, K. Zekentes, N. Kornilios, G. Halkias, A. Dimoulas, A. Christou, F.
Peiro, A. Cornet, T. Benyattou, A. Tabata, and G. Guillot, in the Proceedings of the “4th
International Conference on InP and Related Materials, April 21-24, 1992, Newport, RI, USA”,
pp. 97-100 (IEEE Catalog #92CH3104-7, New York, 1992)
17.
“InGaAs Molecular Beam Epitaxy in InP wells prepared by reactive ion etching”, A. GEORGAKILAS,
K. Zekentes, K. Tsagaraki, P. Lefbvre, J. Allegre, and A. Christou, in the Proceedings of the “4th
International Conference on InP and Related Materials, April 21-24, 1992, Newport, RI, USA”,
pp. 101-104 (IEEE Catalog #92CH3104-7, New York, 1992)
18.
“Optical characterization of latttice matched and strained GaInAs/AlInAs single quantum wells”, A.
Tabata, T. Benyattou, S. Moneger, J. Grange, G. Guillot, A. GEORGAKILAS, K. Zekentes, and G.
Halkias, in the Proceedings of the “4th International Conference on InP and Related Materials,
April 21-24, 1992, Newport, RI, USA”, pp. 129-132 (IEEE Catalog #92CH3104-7, New York, 1992)
19.
“Reliability, Yield and Manufacturing Defect Correlation in Microwave and Optoelectronic Circuits
and Modules”, A. Christou, and A. GEORGAKILAS, in “Advances in Electronic Packaging 1992”
Proceedings of the 1992 Joint ASME/JSME Conference on Electronic Packaging, Vol. 2, pp. 865870 (ASME, New York, 1992), eds. W.T. Chen and H. Abe
20.
“Heterojunction Bipolar Transistor (HBT) Surface Related Failure Mechanisms”, A. Christou, P.
Tang, A. GEORGAKILAS, L. Zhu and B. Marazas, in Proceedings of the “3rd European Symposium
on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 92), Schwäbisch-Gmünd,
Germany, 5-8 October 1992”, pp. 525-528 (vde-verlag, Berlin 1992)
21.
“Growth temperature optimization for InAlAs molecular beam epitaxy”, A. GEORGAKILAS, A.
Christou, G. Halkias, K. Zekentes, N. Kornilios, C. Papavassiliou, A. Dimoulas, F. Peiro, A. Cornet, S.
Ababou, A. Tabata, and G. Guillot, in Proceedings of the “Sixteenth State-Of-The-Art Program On
Compound Semiconductors (SOTAPOCS XVI), and the symposium on Materials And Processing
Issues For Large Scale Integrated Electronic And Photonic Arrays”, pp. 141-150 (The
Electrochemical Society, Pennington, NJ 1992), eds. D.N. Buckley and V. Swaminathan
22.
“Frequency Resolved Admittance Measurements on InAlAs/InGaAs/InAlAs Single Quantum Wells
Applied to Determine the Conduction Band Offset and the Capture Time Constant”, J.M. LopezVillegas, P. Roura, J. Bosch, J.R. Morante, A. GEORGAKILAS, and K. Zekentes, in Proceedings of the
“Sixteenth State-Of-The-Art Program On Compound Semiconductors (SOTAPOCS XVI), and the
symposium on Materials And Processing Issues For Large Scale Integrated Electronic And
Photonic Arrays”, pp. 122-130 (The Electrochemical Society, Pennington, NJ 1992), eds. D.N.
Buckley and V. Swaminathan
23.
“Structural Characterization by TEM of Strained InGaAs/InAlAs Quantum Well Structures”, F. Peiro,
A. Cornet, J.R. Morante, A. GEORGAKILAS, and G. Halkias, in Proceedings of the “Sixteenth StateOf-The-Art Program On Compound Semiconductors (SOTAPOCS XVI), and the symposium on
Materials And Processing Issues For Large Scale Integrated Electronic And Photonic Arrays”, pp.
275-284 (The Electrochemical Society, Pennington, NJ 1992), eds. D.N. Buckley and V. Swaminatha
24.
“Influence of the growth temperature on the presence of composition inhomogeneities in
In0.52Al0.48As layers grown by MBE on InP substrates”, F. Peiro, A. Cornet, A. Herms, J.R. Morante,
A. GEORGAKILAS, and G. Halkias, in “Mechanisms of Heteroepitaxial Growth”, Mater. Res. Soc.
Symp. Proc., Vol. 263, pp. 101-106 (MRS, Pittsburgh, 1992), eds. M.F. Chisholm, R.Hull, L.J.
Schowalter and B.J. Garrison
25.
“HBT Self-Aligned Collector-Base Interface State Related Failure Mechanism”, A. Christou, A.
GEORGAKILAS, P. Tang, and A.A. Iliadis, in “19th Intern. Symp. on Gallium Arsenide and Rel.
Comp., Karuizawa, Japan, September 28 - October 2, 1992” Inst. Phys. Conf. Series, No. 129, pp.
711-716 (Institute of Physics, Bristol, UK, 1993), eds. T. Ikegami, F. Hasegawa and Y. Takeda
26.
“Anisotropic spinodal decomposition in MBE In0.53Ga0.47As films grown on misoriented (001)Si
substrates”, A. GEORGAKILAS, J. Stoemenos, and A. Christou, in “19th Intern. Symp. on Gallium
Arsenide and Rel. Comp., Karuizawa, Japan, September 28 - October 2, 1992” Inst. Phys. Conf.
Series, No. 129, pp. 471-476 (Institute of Physics, Bristol, UK, 1993), eds. T. Ikegami, F. Hasegawa
and Y. Takeda
27.
“The MBE technology for selective area embedded InGaAs layers in InP substrates”, A.
GEORGAKILAS, A. Christou, K. Zekentes, K. Tsagaraki, G. Halkias, P. Lefebvre, and J. Allegre, in
“Processing and Packaging of Semiconductor Laser and Optoelectronic Devices”, Proc. SPIE
1851, pp. 138-148 (1993)
28.
“On the origin of the contrast inhomogeneities found on InAlAs layers grown on InP substrates at
high temperatures”, F. Peiro, A. Cornet, J.R. Morante, and A. GEORGAKILAS, in “Semiconductor
heterostructures for photonic and electronic applications”, Mater. Res. Soc. Symp. Proc., Vol.
281, pp. 133-138, (MRS, Pittsburgh, 1993), eds. C.W. Tu, D.C. Houghton and R.T. Tung
29.
“Study of the main electron scattering mechanisms in InGaAs/InAlAs single quantum wells by
photoreflectance measurements versus temperature”, Y. Baltagi, C. Bru, T. Benyattou, S. Moneger,
G. Guillot, A. GEORGAKILAS, K. Zekentes and G. Halkias, in Proceedings of the “5th Int. Conf. on
InP and Related Materials”, pp. 151-154 (1993)
30.
“Admittance spectroscopy measurements on AlInAs/GaInAs/AlInAs quantum well structures:
evidence of a deep level assisted tunneling”, S. Ababou, G. Guillot, S. Clark, G. Halkias, A.
GEORGAKILAS, K. Zekentes, D. Stievenard, X. Letartre and M. Lanoo, Proceedings of the “5th Int.
Conf. on InP and Related Materials”, pp. 151-154 (1993)
31.
“Characterization of the main electron scattering mechanisms in InGaAs/InAlAs single quantum
wells by optical modulation spectroscopy”, Y. Baltagi, C. Bru, T. Benyattou, S. Moneger, A.
GEORGAKILAS, K. Zekentes, G. Halkias, M. Gendry, V. Drouot and G. Hollinger, in “Physical
Concepts and Materials for Novel Optoelectronic Device Applications II”, Proc. SPIE Vol. 1985,
pp. 433-441 (1993)
32.
“Structural Characterization of InAlAs/InGaAs Layers Grown on InP Patterned Substrates”, F. Peiro,
A. Cornet, J. R. Morante, K. Zekentes, and A. GEORGAKILAS, in “Compound Semiconductor
Epitaxy”, Mater. Res. Soc. Symp. Proc., Vol. 340, pp. 59-64 (MRS, Pittsburgh, 1994), eds. C.W. Tu,
L.A. Kolodzieski and V.R. McCrary
33.
“Effects of Silicon Misorientation Angle on the RF and DC Characteristics of GaAs-on-Si MESFETs”,
Ch. Papavassiliou, G. Constantinidis, N. Kornilios, A. GEORGAKILAS, E. Lochtermann and P.
Panayotatos, “Strained Layer Epitaxy-Materials, Processing and Device Applications”, Mater.
Res. Soc. Symp. Proc., Vol. 379, pp. 345-350 (MRS, Pittsburgh, 1995) eds. J. Bean, E.A. Fitzerald, J.
Hoyt and K.Y. Cheng
34.
“Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates”, F.
Peiro, A. Cornet, J. Ferrer, J.R. Morante, G. Halkias and A. GEORGAKILAS, in “Optoelectronic
Materials-Ordering, Composition Modulation, and Self-Assembled Structures”, Mater. Res. Soc.
Symp. Proc., Vol. 417, pp.265-270 (MRS, Pittsburgh, 1996), eds. E.D. Jones, A. Mascarenhas, P.
Petroff and R. Bhat
35.
“Electron Density Effects in Modulation Spectroscopy of Lattice Matched and Strained
InGaAs/InAlAs/InP HEMTs”, A. Dimoulas, J. Davidow, K.P. Giapis, A. GEORGAKILAS, G. Halkias and
N. Kornilios, in “Diagnostic Techniques for Semiconductor Materials Processing”, Mater. Res.
Soc. Symp. Proc., Vol. 406, (MRS, Pittsburgh, 1996), eds. S.E. Pang, O.J. Glembocki, F.H. Pollak, F.
Celii and C.M.S. Torres
36.
“Structural characterization of InGaAs/InAlAs quantum wells grown on (111)-InP substrates”, A.
Vila, A. Cornet, F. Peiro, J.R. Morante, A. GEORGAKILAS, N. Becourt and G. Halkias, in "23rd Intern.
Symp. on Compound Semiconductors", St. Petersbourg, 1996. Inst. Phys. Conf. Ser. No. 155, pp.
925-928 (1997)
37.
"Single-growth epitaxial structure for optical interconnects applicable in a GaAs-Si wafer bonding
technology", K. Michelakis, D. Cengher, E. Aperathitis, G. Deligeorgis, M. Androulidaki, Z.
Hatzopoulos, P. Tzanetakis and A. GEORGAKILAS, E-MRS 1999 Spring Meeting, June 1-4, 1999,
Strasbourg, France, CD-ROM Proceedings, Symposium K, paper KIII.3
38.
"Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters", A.
GEORGAKILAS, K. Tsagaraki, E. Makarona, G. Constantinidis, M. Androulidaki, M. Kayambaki, E.
Aperathitis and N.T. Pelekanos, E-MRS 1999 Spring Meeting, June 1-4, 1999, Strasbourg, France,
CD-ROM Proceedings, Symposium K, paper K/P02
39.
"A technology for GaAs-based optoelectronic integrated circuits", D. Cengher, E. Aperathitis, M.
Androulidaki, G. Deligeorgis, M. Cengher, K. Amimer, Z. Hatzopoulos and A. GEORGAKILAS, CAS
2000 Proceedings, “2000 Int. Semiconductor Conf., October 10-14, 2000, Sinaia, Romania”, pp.
155-158 (IEEE, Piscataway, NJ, 2000 – IEEE Catalog. No. 00TH8486)
40.
"Photoluminescence study of hexagonal GaN heteroepitaxial layers grown by molecular beam
epitaxy on Al2O3,, Si and GaAs substrates", E.-M. Pavelescu, M. Androulidaki, M. Cengher, A.
GEORGAKILAS and V. Cimpoca, CAS 2000 Proceedings, “2000 Int. Semiconductor Conf., October
10-14, 2000, Sinaia, Romania”, pp. 109-112 (IEEE, Piscataway, NJ, 2000 – IEEE Catalog. No.
00TH8486)
41.
"Material properties of GaN grown by radio frequency plasma-assisted molecular beam epitaxy
on Si (111) substrates", M. Androulidaki, K. Amimer, K. Tsagaraki, M. Kayambaki, G. Constantinidis,
Z. Hatzopoulos and A. GEORGAKILAS, Proceedings of ASDAM 2000, “The Third Int.
EuroConference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 1618 October, 2000”, pp. 9-12 (IEEE, Piscataway, NJ, 2000 – IEEE Catalog. No. 00EX386)
42.
"Atomic force microscopy analysis of Ga-face and N-face GaN grown on Al2O3 (0001) by plasmaassisted molecular beam epitaxy", A. Kostopoulos, S. Mikroulis, E. Dimakis, K. Tsagaraki, G.
Constantinidis and A. GEORGAKILAS, Proceedings of ASDAM 2000, “The Third Int. EuroConference
on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 16-18 October,
2000”, pp. 355-358 (IEEE, Piscataway, NJ, 2000 – IEEE Catalog. No. 00EX386)
43.
“Morphological and structural aspects of GaN films grown on sapphire by MBE”, Th. Kehagias, Ph.
Komninou, J. Kioseoglou, E. Sarigiannidou, G.P. Dimitrakopulos, S. Mikroulis, K. Tsagaraki, A.
GEORGAKILAS, Th. Karakostas, Bulgarian J. Physics 27, pp. 90-93 (2000)
44.
"Microstructure of GaN films grown by RF-plasma assisted molecular beam epitaxy", Ph.
Komninou, Th. Kehagias, Th. Karakostas, G. Nouet, P. Ruterana, K. Amimer, S. Mikroulis and A.
GEORGAKILAS, Proceedings of the 2000 MRS Fall Meeting, Symposium G: GaN and Related Alloys,
Boston, USA, November 27- December 1, 2000, Mat. Res. Soc. Symp. Proc. Vol. 639, G3.47 (2001)
45.
"Interaction between basal stacking faults and prismatic inversion domain boundaries in GaN", Ph.
Komninou, J. Kioseoglou, E. Sarigiannidou, G. Dimitrakopoulos, Th. Kehagias, Th. Karakostas, A.
GEORGAKILAS, G. Nouet and P. Ruterana, Proceedings of the 2000 MRS Fall Meeting, Symposium
G: GaN and Related Alloys, Boston, USA, November 27- December 1, 2000, Mat. Res. Soc. Symp.
Proc. Vol. 639, G3.44 (2001)
46.
“GaN layers grown directly onto GaAs by molecular beam epitaxy”, B Pecz, L. Tσth, Zs. Czigαny, K.
Amimer and A. GEORGAKILAS, in Microscopy of Semiconducting Materials, XII, at University of
Oxford, 25-29 March, 2001, IOP Conf. Proc. Ser. 169, pp. 293-296 (2001)
47.
“III-V material and device aspects for the monolithic integration of GaAs devices on Si using
GaAs/Si low temperature wafer bonding”, A. GEORGAKILAS, M. Alexe, G. Deligeorgis, D. Cengher,
E. Aperathitis, M. Androulidaki, S. Gallis, Z. Hatzopoulos and G. Halkias, invited paper in CAS 2001
Proceedings, “2001 Int. Semiconductor Conf., October 9-13, 2001, Sinaia, Romania”, pp. 239-244
(IEEE, Piscataway, NJ, 2001 – IEEE Catalog. No. 01TH8547)
48.
"Material properties of GaN films with Ga- or N-face polarity grown by MBE on Al2O3 (0001)
substrates under different growth conditions", A. Kostopoulos, S. Mikroulis, E. Dimakis, E.-M.
Pavelescu, K. Tsagaraki, G. Constantinidis, A. GEORGAKILAS, Ph. Komninou, Th. Kehagias and Th.
Karakostas, in Microelectronics, Microsystems and Nanotechnology (MMN 2000), pp. 201-204
(Word Scientific, 2001)
49.
"Investigation of the nitridation of Al2O3 (0001) substrates by a nitrogen radio frequency plasma
source", S. Mikroulis, V. Cimalla, M. Androulidaki, G. Drakakis, M. Zervos, M. Cengher and A.
GEORGAKILAS, in Microelectronics, Microsystems and Nanotechnology (MMN 2000), pp. 135138 (Word Scientific, 2001)
50.
“Investigation of different Si (111) substrate preparation methods for the growth of GaN by radio
frequency plasma-assisted molecular beam epitaxy, M. Androulidaki, K. Amimer, K. Tsagaraki, G.
Constantinidis, Z. Hatzopoulos, A. GEORGAKILAS, F. Peiro and A. Cornet, in Microelectronics,
Microsystems and Nanotechnology (MMN 2000), pp. 197-200 (Word Scientific, 2001)
51.
“High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy”, E.
Dimakis, A. Georgakilas, G. Kittler, M. Androulidaki, K. Tsagaraki, E. Bellet-Amalric, D. Jalabert and
N. T. Pelekanos, in 2002 12th International Conference on Semiconducting & Insulating Materials
(SIMC-XII-2002), pp. 60-63 (IEEE, 2002)
52.
‘Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding
using a spin-on-glass intermediate layer”, G. Deligeorgis, S. Gallis, M. Androulidaki, D. Cengher, Z.
Hatzopoulos, M. Alexe, V. Dragoi, E. D. Kyriakis-Bitzaros, G. Halkias, F. Peiro and A. Georgakilas, in
2002 12th International Conference on Semiconducting & Insulating Materials (SIMC-XII-2002),
pp. 125-128 (IEEE, 2002)
53.
“On the alpha particle induced degradation in n-type GaAs leyers”, N. Arpatzanis, G.
Constantinidis, A. GEORGAKILAS, G. J. Papaioannou, M. Papastamatiou, in 2002 12th International
Conference on Semiconducting & Insulating Materials (SIMC-XII-2002), pp. 159-164 (IEEE, 2002)
54.
“Comparison of the strain and stress in bonded and epitaxial gallium arsenide on silicon by
photoreflectance spectroscopy measuerements”, S. Gallis, G. Deligeorgis, A. GEORGAKILAS,
M.Alexe, in Mat. Res. Soc. Proceedings Vol. 744, M8.5.1 (2003)
55.
“Promising results of plasma assisted MBE for optoelectronic applications”, A. GEORGAKILAS, E.
Dimakis, K. Tsagaraki and M. Androulidaki, in NATO ARW “UV Solid-State Light Emitters and
Detectors”, NATO Science Series II, Vol. 144, pp. 179-188 (Kluwer Academic Publishers,
Dordrecht, 2004)
56.
“ZrO2/GaN metal oxide semiconductor structures characterization and application”, J. Kuzmik, S.
Harasek, G. Konstantinidis, Š. Hašcík, D. Pogany, E. Bertagnolli, and A. Georgakilas, in The 28th
Workshop on Compound Semicond. Devices and Integrated Circuits held in Europe
(WOCSDICE’04), May 17-19, 2004, Smolenice, Slovakia, pp. 35-36
B. 2005-2012
- Papers
1.
“Active nitrogen species dependence on radiofrequency plasma source operating parameters and
their role in GaN growth”, E. Iliopoulos, A. Adikimenakis, E. Dimakis, K. Tsagaraki, G. Konstantinidis
and A. GEORGAKILAS, J. Cryst. Growth 278, pp. 426-430 (2005)
2.
“Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN
(0001)”, E. Dimakis, E. Iliopoulos, K. Tsagaraki, Ph. Komninou, Ph. Kehagias, A. Delimitis, A.
GEORGAKILAS, J. Cryst. Growth 278, pp. 367-372 (2005)
3.
“Interfacial Structure of MBE Grown InN on GaN”, Th. Kehagias, E. Iliopoulos, A. Delimitis, G.
Nouet, E. Dimakis, A. GEORGAKILAS and Ph. Komninou, Phys. Stat. Sol. (a) 202, pp. 777-780 (2005)
4.
“Anion Selective Potentiometric Sensor Based on Gallium Nitride Crystalline Membrane”, Y.
Alifragis, G. Konstantinidis, A. GEORGAKILAS, N. Chaniotakis, Electroanalysis 17, pp. 527-531
(2005)
5.
“Temperature dependence of GaN Schottky diodes I-V characteristics”, J. Osvald, J. Kuzmik, G.
Konstantinidis, P. Lobotka and A. GEORGAKILAS, Microel. Engineering 81, pp. 181-187 (2005)
6.
“GaN-based anion selective sensor: Probing the origin of the induced electrochemical potential”, N.
A. Chaniotakis, Y. Alifragis, A. GEORGAKILAS, and G. Konstantinidis, Appl. Phys. Lett. 86, 164103
(2005)
7.
“Physical model of InN growth on Ga-face GaN (0001) by molecular beam epitaxy”, E. Dimakis, E.
Iliopoulos, K. Tsagaraki, and A. GEORGAKILAS, Appl. Phys. Lett. 86, 133104 (2005)
8.
“Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by
molecular beam epitaxy” Th. Kehagias, A. Delimitis, Ph. Komninou, E. Iliopoulos, E. Dimakis, A.
GEORGAKILAS and G. Nouet, Appl. Phys. Lett. 86, 151905 (2005)
9.
“Heteroepitaxial growth of In-face InN on GaN (0001) by plasma assisted molecular beam
epitaxy”, E. Dimakis, E. Iliopoulos, K. Tsagaraki, Th. Kehagias, Ph. Komninou and A. GEORGAKILAS,
J. Appl. Phys. 97, 113520 (2005)
10.
“Micro-Raman characterization of InGaN/ GaN/ Al2O3 heterostructures”, A. G. Kontos, Y. S. Raptis,
N. T. Pelekanos, A. GEORGAKILAS, E. Bellet-Amalric and D. Jalabert, Phys. Rev. B 72, 155336
(2005)
11.
“Response to anions of AlGaN/GaN high-electron-mobility transistors”, Y. Alifragis, A.
GEORGAKILAS, G. Konstantinidis, E. Iliopoulos, A. Kostopoulos and N. A. Chaniotakis, Appl. Phys.
Lett. 87, 253507 (2005)
12.
“InAlN/GaN HEMTs: A first insight into technological optimization”, J. Kuzmik, A. Kostopoulos, G.
Konstantinidis, J.-F. Carlin, A. GEORGAKILAS and D. Pogany, IEEE Trans. Elect. Dev. 53, pp. 422426 (2006)
13.
“Ultrafast carrier dynamics in InxGa1-xN (0001) epilayers: effects of high fluence excitation”, E.
Lioudakis, A. Othonos, E. Dimakis, E. Iliopoulos and A. GEORGAKILAS, Appl. Phys. Lett. 88, 121128
(2006)
14.
“Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam
epitaxy”, E. Dimakis, E. Iliopoulos, K. Tsagaraki, A. Adikimenakis and A. GEORGAKILAS, Appl. Phys.
Lett. 88, 191918 (2006)
15.
“Femtosecond time-resolved study in InxGa1-xN (0001) ultrathin epilayers: Effects of high indium
mole fraction and thickness of the films”, E. Lioudakis, A. Othonos, E. Iliopoulos and A.
GEORGAKILAS, Appl. Phys. Lett. 89, 241109 (2006)
16.
“Depth profile of the biaxial strain in a 10 μm thick InN (0001) film”, J. Arvanitidis, D. Christofilos,
G. A. Kourouklis, A. Delimitis, M. Katsikini, Ph. Komninou, S. Ves, E. Dimakis and A. GEORGAKILAS,
J. Appl. Phys. 100, 113516 (2006)
17.
“InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam
epitaxy”, E. Iliopoulos, A. GEORGAKILAS, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M.
Androulidaki, and N. T. Pelekanos, Phys. Stat. Sol. (a) 203, pp. 102-105 (2006)
18.
“Structural and optical characterization of thick InN epilayers grown with a single or two step
growth process on GaN (0001)”, A. Delimitis, P. Gladkov, Ph. Komninou, Th. Kehagias, J.
Arvanitidis, S. Ves, M. Katsikini, E. Dimakis and A. GEORGAKILAS, Phys. Stat. Sol. (a) 203, pp. 162166 (2006)
19.
“Self-regulating mechanism of InN growth on GaN (0001) by molecular beam epitaxy; from
nanostructures to films”, E. Dimakis, E. Iliopoulos, K. Tsagaraki and A. GEORGAKILAS, Phys. Stat.
Sol. (a) 203, 1686-1690 (2006)
20.
“Raman and transmission electron microscopy characterization of InN samples grown on
GaN/Al2O3 by molecular beam epitaxy”, J. Arvanitidis, M. Katsikini, S. Ves, A. Delimitis, Th.
Kehagias, Ph. Komninou, E. Dimakis, E. Iliopoulos and A. GEORGAKILAS, Phys. Stat. Sol. (b) 243,
pp. 1588-1593 (2006)
21.
“Resonant Raman characterization of InAlGaN/GaN heterostructures”, A. Cros, A. Cantarero, N. T.
Pelekanos, A. GEORGAKILAS, J. Pomeroy, M. Kuball, Phys. Stat. Sol. (b) 243, pp. 1674-1678 (2006)
22.
“Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE”, G. P.
Dimitrakopulos, J. Kioseoglou, E. Dimakis, A. GEORGAKILAS, G. Nouet and Ph. Komninou, Phys.
Stat. Sol. (a) 203, pp. 2151-2155 (2006)
23.
“Structural properties of 10μm thick InN grown on sapphire (0001)”, E. Dimakis, J. Domagała, A.
Delimitis, Ph. Komninou, A. Adikimenakis, E. Iliopoulos, and A. GEORGAKILAS, Superlattices and
Microstructures 40, pp. 246-252 (2006)
24.
“Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity
Fe-doped GaN”, E. Iliopoulos, M. Zervos, A. Adikimenakis, K. Tsagaraki, A. GEORGAKILAS,
Superlattices and Microstructures 40, pp. 313-319 (2006)
25.
“GaN micromachined FBAR structures for microwave applications”, A. Müller, D. Neculoiu, D.
Vasilache, D. Dascalu, G. Konstantinidis, A. Kostopoulos, A. Adikimenakis, A. GEORGAKILAS, K.
Mutamba, C. Sydlo, H.L. Hartnagel and A. Dadgar, Superlattices and Microstructures 40, pp. 426431 (2006)
26.
“Potassium selective chemically modified field effect transistors based on AlGaN/GaN twodimensional electron gas heterostructures”, Y. Alifragis, A. Volosirakis, N. A. Chaniotakis, G.
Konstantinidis, A. Adikimenakis and A. GEORGAKILAS, Biosensors and Bioelectronics 22, pp.
2796-2801 (2007)
27.
“AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ions”, Y. Alifragis, A.
Volosirakis, N.A. Chaniotakis, G. Konstantinidis, E. Iliopoulos, and A. GEORGAKILAS, Phys. Stat.
Sol. (a) 204, pp. 2059-2063 (2007)
28.
“Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs”, J. Kuzmik, J.-F.
Carlin, M. Gonschorek, A. Kostopoulos, G. Konstantinidis, G. Pozzovivo, S. Golka, A.
GEORGAKILAS, N. Grandjean, G. Strasser, and D. Pogany, Phys. Stat. Sol. (a) 204, pp. 2019-2022
(2007)
29.
“Analysis of biaxial strain in InN (0001) epilayers grown by molecular beam epitaxy”, E. Dimakis, J.
Domagala, E. Iliopoulos, A. Adikimenakis and A. GEORGAKILAS, Phys. Stat. Sol. (a) 204, pp. 19961999 (2007)
30.
“Growth Optimization of Electron Confining InN/GaN Quantum Well Heterostructure”, E. Dimakis,
E. Iliopoulos, M. Kayambaki, K. Tsagaraki, A. Kostopoulos, G. Konstantinidis and A. GEORGAKILAS,
Electronic Materials 36, pp. 373-378 (2007)
31.
“Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures”, K. Cico, J.
Kuzmik, D. Gregusova, R. Stoklas, T. Lalinsky, A. GEORGAKILAS, D. Pogany, H. Frojlich,
Microelectronics Reliability 47, pp. 790-793 (2007)
32.
“Strain non-uniformity in GaAs heteroepitaxial films on Si (001) studied by x-ray diffraction”, A.
Shalimov, J. Bak-Misiuk, V. M. Kaganer, M. Calamiotou and A. GEORGAKILAS, J. Appl. Phys. 101,
013517 (2007)
33.
“Temporal evolution of effects of ultrafast carrier dynamics in In0.33Ga0.67N: above and near the
bandgap”, E. Lioudakis, E. Iliopoulos, A. GEORGAKILAS and A. Othonos, Semicond. Sci. Technolol.
22, pp. 158-162 (2007)
34.
“Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic
pressure”, A. Kaminska, G. Franssen, T. Suski, I. Gorczyca, N. E. Christensen, A. Svane, A. Suchocki,
H. Lu, W. J. Schaff, E. Dimakis and A. GEORGAKILAS, Phys. Rev. B 76, 075203 (2007)
35.
“Femtosecond carrier dynamics of InxGa1-xN thin films grown on GaN (0001); Effect of carrierdefect scattering”, E. Lioudakis, A. Othonos, E. Iliopoulos, K. Tsagaraki, and A. GEORGAKILAS, J.
Appl. Phys. 102, 073104 (2007)
36.
“Bowing of the band gap pressure coefficient in InxGa1-xN alloys”, G. Franssen, I. Gorczyca, T. Suski,
A. Kamińska, J. Pereiro, E. Muñoz, E. Iliopoulos, A. GEORGAKILAS, S. B. Che, Y. Ishitani, A.
Yoshikawa, N. E. Christensen and A. Svane, J. Appl. Phys. 103, 033514 (2008)
37.
“Surface electronic properties of undoped InAlN alloys”, P. D. C. King, T. D. Veal, A. Adikimenakis,
H. Lu, L. R. Bailey, E. Iliopoulos, A. GEORGAKILAS, W. J. Schaff and C. F. McConville, Appl. Phys.
Lett. 92, 172105 (2008)
38.
“Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry”, E. Iliopoulos, A.
Adikimenakis, C. Giesen, M. Heuken and A. GEORGAKILAS, Appl. Phys. Let. 92, 191907 (2008)
39.
“Step-induced misorientation of GaN grown on r-plane sapphire”, J. Smalc-Koziorowska, G. P.
Dimitrakopoulos, S.-L. Sahonta, G. Tsiakatouras, A. GEORGAKILAS and Ph. Komninou, Appl. Phys.
Lett. 93, 021910 (2008)
40.
“Investigation of optical nonlinearities and carrier dynamics in In-rich InGaN alloys”, S. Nargelas, T.
Malinauskas, K. Jarasiunas, E. Dimakis and A. GEORGAKILAS, Acta Physica Polonica A 113, pp.
839-843 (2008)
41.
“Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy”, G. P.
Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.-L. Sahonta, J. Kioseoglou, N. Vouroutzis, I.
Hausler, W. Neumann, E. Iliopoulos, A. GEORGAKILAS and Th. Kehagias, Phys. Stat. Sol. (a) 205,
pp. 2569-2572 (2008)
42.
“Effect of composition on the bonding environment of In in InAlN and InGaN epilayers”, M.
Katsikini, F. Pinakidou, E. C. Paloura, Ph. Komninou, E. Iliopoulos, A. Adikimenakis, A.
GEORGAKILAS, and E. Welter, Phys. Stat. Sol. (a) 205, pp. 2593-2597 (2008)
43.
“Temperature dependent EXAFS of InN”, M. Katsikini, F. Pinakidou, E. C. Paloura, Ph. Komninou, A.
GEORGAKILAS, and E. Welter, Phys. Stat. Sol. (a) 205, pp. 2611-2614 (2008)
44.
“Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE”, A.
Adikimenakis, S.-L. Sahonta, G.P. Dimitrakopulos, J. Domagala, Th. Kehagias, Ph. Komninou, E.
Iliopoulos, and A. GEORGAKILAS, J. Cryst. Growth 311, pp. 2010-2015 (2009)
45.
“InN films and nanostructures grown on Si (111) by RF-MBE”, A. O. Ajagunna, A. Adikimenakis, E.
Iliopoulos, K. Tsagaraki, M. Androulidaki, and A. GEORGAKILAS, J. Cryst. Growth 311, pp. 20582062 (2009)
46.
“Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy”, A. P. Vajpeyi, A.
O. Ajagunna, G. Tsiakatouras, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki, and A.
GEORGAKILAS, Microelectronic Engineering 86, pp. 812-815 (2009)
47.
“High electron mobility transistors based on the AlN/GaN heterojunction”, A. Adikimenakis, K. E.
Aretouli, E. Iliopoulos, A. Kostopoulos, K. Tsagaraki, G. Konstantinidis, and A. GEORGAKILAS,
Microelectronic Engineering 86, pp. 1071-1073 (2009)
48.
“Effect of substrate temperature on spontaneous GaN nanowires growth and optoelectronic
properties”, A. P. Vajpeyi, A. GEORGAKILAS, G. Tsiakatouras, K. Tsagaraki, M. Androulidaki, S. J.
Chua and S. Tripathy, Physica E 41, pp. 427-430 (2009)
49.
“InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy”, A.
P. Vajpeyi, A. O. Ajagunna, K. Tsagaraki, M. Androulidaki and A. GEORGAKILAS, Nanotechnology
20, 325605 (2009)
50.
“Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam
epitaxy”, S.-L. Sahonta, G. P. Dimitrakopulos, Th. Kehagias, J. Kioseoglou, A. Adikimenakis, E.
Iliopoulos, A. GEORGAKILAS, H. Kirmse, W. Neumann and Ph. Komninou, Appl. Phys. Lett. 95,
021913 (2009)
51.
“Indium migration paths in V-defects of MOCVD grown InAlN", Th. Kehagias, G. P. Dimitrakopulos,
J. Kioseoglou, H. Kirmse, C. Giesen, M. Heuken, A. GEORGAKILAS, W. Neumann, Th. Karakostas
and Ph. Komninou, Appl. Phys. Lett. 95, 071905 (2009); and “Erratum: “Indium migration paths in
V-defects of InAlN grown by metal-organic vapor phase epitaxy” [Appl. Phys. Lett. 95, 071905
(2009)]”, Appl. Phys. Lett. 99, 059902 (2011)
52.
“Direct immobilization of enzymes in GaN & InN nanocolumns. The urease case study”, N. Sofikiti,
N. Chaniotakis, J. Grandal, M. Utrera, M. A. Sanchez-Garcia, E. Calleja, E. Iliopoulos and A.
GEORGAKILAS, Appl. Phys. Lett. 95, 113701 (2009)
53.
“Negative differential resistance in GaN nanowire network”, M. Dragoman, G. Konstantinidis, A.
Cismaru, D. Vasilache, A. Dinescu, D. Dragoman, D. Neculoiu, R. Buiculescu, G. Deligeorgies, A. P.
Vajpeyi and A. GEORGAKILAS, Appl. Phys. Lett. 96, 053116 (2010)
54.
“Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire”, A. O.
Ajagunna, E. Iliopoulos, G. Tsiakatouras, K. Tsagaraki, M. Androulidaki and A. GEORGAKILAS, J.
Appl. Phys. 107, 024506 (2010)
55.
“The defect character of GaN growth on r-plane sapphire”, J. Smalc-Koziorowska, G. Tsiakatouras,
A. Lotsari, A. GEORGAKILAS and G. P. Dimitrakopulos, J. Appl. Phys. 107, 073525 (2010)
56.
“Proposal of High-Electron Mobility Transistors with Strained InN Channel”, J. Kuzmik and A.
GEORGAKILAS, IEEE Trans. Elect. Dev. 58, pp. 720-724 (2011)
57.
“Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond”,
J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, C. Gaqiere, G. Tsiakatouras, G.
Deligeorgis and A. GEORGAKILAS, J. Appl. Phys. 109, 086106 (2011)
58.
“Influence of high electron concentration on band gap and effective electron mass of InN”, O.
Domnez, M. Yilmaz, A. Erol, B. Ulug, M. C. Arikan, A. Ulug, A. O. Ajagunna, E. Iliopoulos and A.
GEORGAKILAS, Phys. St. Sol. (b) 248, pp. 1172-1175 (2011)
59.
“Determination of the carrier density dependent electron effective mass in InN using infrared and
Raman spectra”, E. Tiras, M. Tanisli, N. Balkan, S. Ardali, E. Iliopoulos and A. GEORGAKILAS, Phys.
St. Sol. (b) 249, pp. 1235-1240 (2012)
60.
“Anisotropic strain in a-plane GaN and polarization dependence of the Raman peaks”, M. Katsikini,
J. Arvanitidis, D. Christofilos, S. Ves, G. P. Dimitrakopulos, G. Tsiakatouras, K. Tsagaraki and A.
GEORGAKILAS, Phys. St. Sol. (a) 209, pp. 1085-1089 (2012)
-
Proceedings
Publications in Journals publishing only special issues from international conferences
8.
“Recombination kinetics in polarization matched GaN/InAlGaN quantum wells”, M. Zamfirescu, A.
Vinattieri, M. Gurioli, M. Androulidaki, N. T. Pelekanos, E. Dimakis and A. GEORGAKILAS, Phys.
Stat. Sol. (c) 2, pp. 3941-3944 (2005)
9.
“Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys”, M. Androulidaki,
N. T. Pelekanos, K. Tsagaraki, E. Dimakis, E. Iliopoulos, A. Adikimenakis, E. Bellet-Amalric, D.
Jalabert and A. GEORGAKILAS, Phys. Stat. Sol. (c) 3, pp. 1866-1869 (2006)
10.
“InN quantum dots grown on GaN (0001) by molecular beam epitaxy”, E. Dimakis, A.
GEORGAKILAS, E. Iliopoulos, K. Tsagaraki, A. Delimitis, Ph. Komninou, H. Kirmse, W. Neumann,
M. Androulidaki, and N. T. Pelekanos, Phys. Stat. Sol (c) 3, pp. 3983-3987 (2006)
11.
“Conduction band filling in In-rich InGaN and InN under hydrostatic pressure”, G. Franssen, A.
Kaminska, T. Suski, I. Gorczyca, N. E. Christensen, A. Svane, H. Lu, W. J. Schaff, E. Dimakis, A.
GEORGAKILAS, S. B. Che, Y. Ishitani, and A. Yoshikawa, Phys. Stat. Sol. (c) 5, pp. 1488-1490
(2008)
12.
“Electron microscopy investigation of extended defects in a-plane gallium nitride layers grown on
r-plane sapphire by molecular beam epitaxy”, J. Smalc-Koziorowska, Ph. Komninou, S.-L.
Sahonta, J. Kioseoglou, G. Tsiakatouras and A.GEORGAKILAS, Phys. Stat. Sol. (c) 5, pp. 37483751 (2008)
13.
“Raman scattering of InxAl1-xN alloys with 0.2<x<0.9”, M. Katsikini, J. Arvanitidis, D. Christofilos,
S. Ves, A. Adikimenakis and A. Georgakilas, Phys. Stat. Sol. (c) 7, pp. 76-79 (2010)
14.
“LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SIC and
composite SiCopSiC substrates for HEMT device applications”, M.-A. di Forte Poisson, N. Sarazin,
M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. GEORGAKILAS, P. Kominou, M.
Guziewicz, E. Kaminska, A. Piotrowska, C. Gaquière, M. Oualli, E. Chartier, E. Morvan and S.
Delage, Phys. St. Sol. (c) 7, pp. 1317-1324 (2010) (invited article)
15.
“Electron microscopy of InGaN nanopillars spontaneously grown on Si (111) substrates”, Th.
Kehagias, I. Kerasiotis, A. P. Vajpeyi, I. Hausler, W. Neumann, A. GEORGAKILAS, G. P.
Dimitrakopulos and Ph. Komninou, Phys. St. Sol. (c) 7, pp. 1305-1308 (2011)
16.
“Longitudinal polar optical phonons in InN/GaN single and double heterostructures”, S. Ardali, E.
Tiras, M. Gunes, N. Balkan, A. O. Ajagunna, E. Iliopoulos and A. GEORGAKILAS, Phys. St. Sol. (c)
7, pp. 1620-1624 (2011)
17.
“Superconductivity in MBE grown InN”, M. Gunes, N. Balkan, E. Tiras, S. Ardali, A. O. Ajagunna, E.
Iliopoulos and A. GEORGAKILAS, Phys. St. Sol. (c) 7, pp. 1637-1640 (2011)
18.
“Microscopy of nitride layers grown on diamond”, B. Pécz, L. Tóth, Á. Barna, G. Tsiakatoura, A. O.
Ajagunna, A. Kovács and A. GEORGAKILAS, J. Phys. Conf. Ser. 326, 012010 (2011)
19.
“Determination of dislocation densities in InN”, S. Ardali, E. Tiras, M. Gunes, N. Balkan, A. O.
Ajagunna, E. Iliopoulos and A. Georgakilas, Phys. St. Sol. (c) 7, pp. 997-1000 (2012)
20.
“Structural characterization of InN epilayers grown on r-plane sapphire by plasma-assisted MBE”,
A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas and
Ph. Komninou, Phys. St. Sol. (c) 7, pp. 534-537 (2012)
Publications in Proceedings of International Conferences
57.
"Technology, Properties and Limitations of State-of-the-art InAlN/GaN HEMTs", J. Kuzmík, J. -F. Carlin, T.
Kostopoulos, G. Konstantinidis, A. GEORGAKILAS, D. Pogany, in 63rd Device Research Conference
(DRC ’05), Conference digest pp. 57-58, Santa Barbara, June 20-22, 2005
58.
“Micromachined GaN-based FBAR Structures for Microwave Applications”, Kabula Mutamba, Dan
Neculoiu, Alexandru Muller, George Konstantinidis, Dan Vasilache, Cesary Sydlo, A. Kostopoulos, A.
Adikimenakis, A. GEORGAKILAS and Hans Ludwig Hartnagel, Proc of Asia Pacific Microwave
Conference, Yokohama, Dec 2006, pp. 3-1757-1760.
59.
“New developments of GaN membrane based FBAR structures”, D. Neculoiu, A. Muller, D. Vasilache,
D.Dascalu, G. Konstantinidis, A. Kostopoulos, A. Adikimenakis, A. GEORGAKILAS, K. Mutamba, C.
Sydlo, H. L. Hartnagel, Proc of the MEMSWAVE Conference, Orvieto, Italy, 2006, pp. 51-54.
60.
“Rapid thermal annealing and performance of Al2O3/GaN metal-oxide semiconductor structures”, K. Cico,
K. Kuzmik, D. Gregusova, T. Lalinski, A. GEORGAKILAS, D. Pogany and K. Frohlich, in Proc. of the Int.
Conf. on Advanced Semic. Devices and Microsystems (ASDAM ’06), Smolenice, Slovakia, Oct 2006, pp.
197-200
61.
“InAlN/(In)GaN HEMTs for high power applications (Ultragan project)”, J. Kuzmik, J.-F. Carlin, T.
Kostopoulos, G. Konstantinidis, S. Bychikhin, A. GEORGAKILAS, D. Pogany”, MIKON 2006,
Workshop on GaN Devices, May 25, 2006, Krakow, Poland, pp. 110-124 (invited)
62.
“Effects of stress-relieving AlN interlayers in GaN-on-Si grown by plasma-assisted molecular beam
epitaxy” , A. Adikimenakis, S.-L. Sahonta, G. Dimitrakopulos, J. Domagala, Ph. Komninou, A.
Georgakilas, Mater. Res. Soc. Symp. Proc. vol. 1068, 1068-C06-04 (2008)
63.
“High optical quality GaN nanopillars grown on (111) Si using molecular beam epitaxy”, A. P.
Vajpeyi, G. Tsiakatouras, A. Adikimenakis, K. Tsagaraki, M. Androulidaki and A. Georgakilas,
Mater. Res. Soc. Symp. Proc. vol. 1068, 1068-C06-08 (2008)
64.
“InN: The low bandgap III-nitride semiconductor”, A. GEORGAKILAS, CAS 2008 Proceedings, pp.
43-52 (IEEE, 2008) (invited)