1403 Datasheet (1)
Model 1403 TOF-SIMS / Bulk Etch Ion Source
Design Features
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High brightness electron impact source for maximum bulk material removal
Emission regulated bombardment provides stable ion current with front panel
adjustable dynamic range x300
Adjustable spot size from 20 μm to > 1 mm for spatially defined sputtering
Continuously variable beam energy up to 5keV
Neutral species suppression using beam bending optics
Beam blanking capability for TOF SIMS
Integral beam current monitoring capability
Replaceable beam trimming aperture with typical life-time of > 500 hours
Dual filaments provide operational backup with typical filament life-time > 500 hours
Internal source pressure sensor permits monitoring of ion source pressure
All UHV compatible and etch resistant materials used in fabrication
Pre-objective lens deflection for reduced spot size
Differential pumping to minimize main chamber gas loading
Operates over the range of inert gas species
Nonsequitur Technologies 20664 Carmen Loop #3 Bend, OR
97702 Ph: 541-312-2410 Fax: 541-312-2412
1403 Datasheet (2)
Guaranteed Performance @ 5.0 keV Ar Ions
Mode
Spot size
(μms)
250
20
Large Spot
Small Spot
Beam Current
Current Density
(mA/cm2)
30
95
15μΑ
300nA
Model 1403 Ion Gun Schematic
Engineering Specification
Working Distance:
Neutral Species Suppression:
Beam energy:
Raster Size:
Mounting Flange:
Differential Pumping:
Supply Gas Inlet:
Source gases:
Bake-out Temperature:
35 mm see note 1 below
3° Electrostatic bend optics
≤ 5keV continuously variable
4 x 4 mm (minimum)
70 mm (2.75in) O.D. CF
70 mm (2.75 in) O.D. CF
34 mm (1.33 in) O.D. CF
He, Ne, Ar, Kr, Xe
150 °C maximum
Note 1: Figure 1 shows typical focus conditions at other working distances
System Integration Details
70 mm (2.75 in) O.D. CF
MOUNTING FLANGE
GAS INLET, 33mm (1.33in)
O.D. CF FLANGE
9.842 in. (250 mm)
70 mm (2.75 in) O.D. CF
DIFFERENTIAL PUMP PORT
Nonsequitur Technologies 20664 Carmen Loop #3 Bend, OR
97702 Ph: 541-312-2410 Fax: 541-312-2412
1403 Datasheet (3)
1403A Controller Features
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Precise and stable lens voltages
Emission regulated electron impact supply
Front panel raster controls with external programmability
Power interlocks for safety and equipment protection
Remote On/Off control for automated operation from external equipment
Raster compensation electronics to correct for changes in sample geometry and working distance
Comprehensive front panel system parameter monitoring
Controller Specification
Input Power:
Beam Energy:
Dual Condenser Focus:
Objective Focus:
Filament Power:
Electron Bombardment
Ion Extraction:
Bend Deflection
Deflection:
Interlocks:
Front Panel Monitoring:
Chassis Dimensions:
115/230VAC 50/60Hz auto-select operation. Fused at 3.3/1.8A.
0 - 5000V, 1mA switch mode supply continuously variable.
Output capacitance: 0.0047μF.
150 - 5000V, 1mA switch mode supplies independently and continuously variable
through front panel three position rotary switches and trim-pots. Output voltages
scale with energy. Output capacitance: 0.0047μF
0 - 5000V, 1mA switch mode supply continuously variable. Output voltage scales
with energy. Output capacitance: 0.0047μF
Emission regulated supply with front panel selectable filaments providing 5V@
5A max.
Electron accelerating voltage internally adjustable to 150V.
Seven settings of electron emission current selectable from front panel rotary switch.
Internally adjustable to 1500V.
Adjustable output nominally set at 180 volts via front panel momentary switch set in
its normal state. Switch is momentarily activated for beam current measurement using
Faraday collector.
Variable bi-polar 350VDC supply for +X, -X, +Y and -Y deflection. Remaining
octupole elements are supplied from a resistive divider network.
HV cable disconnection turns off HV supplies.
Adjustable high pressure interlock switches off HV supplies in the event of system
overpressure.
System and Auxiliary interlocks provide total shutdown in the event of system or
auxiliary equipment failure.
Digital panel meters provide precision monitoring of all critical parameters including;
lens voltages (41/2 digits), ion source pressure and beam current (31/2 digits), filament
current and voltage (31/2 digits), emission current (3 1/2 digits).
483(W)x132.5(H)x435.4(D) mm. 19 inch rack-mountable desktop case 3U high.
Nonsequitur Technologies 20664 Carmen Loop #3 Bend, OR
97702 Ph: 541-312-2410 Fax: 541-312-2412
1403 Datasheet (4)
Typical Performance Data
Objective Focus Voltage vs. Working Distance
4400
4000
3600
3200
2800
2400
2000
0
20
40
60
80
100
120
Wo rk ing D is t a nc e ( m m )
2 0 uA , 5 k V
Figure 1.
3 0 0 nA , 5 k V
Variation of front panel focus potentiometer to produce optimum beam focus for
different working distances. The two curves represent the large spot (high current)
and small spot (low current) modes of operation.
Beam Current Intensity Profile
300 na Beam current
18
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
D is t a nc e ( μ m )
Figure 2.
Beam intensity profile in small spot mode at 300nA, 5keV Ar ions. The Faraday cup
used for these measurements had pinhole diameter ≈ 10μm.
Beam current Intensity Profile
35
30
25
20
15
10
5
0
0
50
100
150
200
250
300
350
400
450
500
D is t a nc e ( μ m )
Figure 3.
Beam intensity profile in large spot mode at 16μA, 5keV Ar ions. Faraday cup
pinhole diameter ≈ 10μm.
Nonsequitur Technologies 20664 Carmen Loop #3 Bend, OR
97702 Ph: 541-312-2410 Fax: 541-312-2412
1403 Datasheet (5)
1403 Ion Gun Tim e Stability Graph
14.90
14.80
μ
14.70
14.60
14.50
14.40
14.30
14.20
14.10
14.00
E la ps e d T im e
Figure 4.
Ion beam current stability with time using a standard leak valve for gas feed. Stability
over the period was <0.3%. Measurements were repeated every 10 seconds over a
period of 30 minutes.
1403 Beam Current Pressure Response
20.00
18.00
μ
16.00
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
1.00E-07
1.00E-06
1.00E-05
M a in C ha m be r P re s s ure ( T o rr)
Figure 5.
Variation of beam current with Ar gas flow rate to the ion source. The gas flow is
monitored in the main chamber. The peak value in beam current corresponds to an ion
source pressure of ≈ 7mTorr.
1403 Beam Blanking
100
μ
10
1
0.1
0.01
0.001
0.0001
0.00001
0
20
40
60
80
100
120
140
160
B la nk ing V o lt a ge
Figure 6.
Change in ion beam current as a result of applying a beam blanking voltage.
Nonsequitur Technologies 20664 Carmen Loop #3 Bend, OR
97702 Ph: 541-312-2410 Fax: 541-312-2412