Name
bp °C/mm (mp)
MW
D420
nD20
ARSENIC
Atomic number
Crystal form
33
As
Oxidation states
Hexagonal
Atomic weight
0, ±3, ±5
Electrical resistivity (20˚C)
74.92159
Electronegativity, Pauling
33.3 μΩ·cm
CAS number
2.18
Enthalpy of melting
7440-38-2
Specific heat (25˚C)
27.74 kJ/mol
Boiling point
0.0785 cal/g K
Enthalpy of vaporization
613˚C (sublimes)
Thermal conductivity (25˚)
-
Melting point
50.2 W/(m K)
Ionization potential
(spectral)
817˚C (28 atm)
Specific gravity (20˚C)
(aqueous)
5.73 (gray)
9.81 eV (l)
18.633 eV (ll)
-0.240 V (+3)
COMPOUNDS
CH3CH2O
OCH 2CH3
As
OCH 2CH3
毒物
AKA115
ARSENIC TRIETHOXIDE
C6H15AsO3
Soluble: hexane
（既）2-3851
210.07
166
Flashpoint: 49°C (120°F)
ΔHform: -169 kcal/mole
Vapor pressure, 25˚: 1.6 mm
1.21
1.433
1
Employed in doped CVD of silicon dioxide.
1. Becker, F. et al. J. Electrochem. Soc . 1989, 136 , 3033.
EC 221-543-1 HMIS: 4-3-1-X
[3141-12-6]
5g ¥49,500
OMAS078
毒物
TRIPHENYLARSINE
306.24
233 / 14
C18H15As
UV max: 220-250 nm
Dipole moment: 1.23
Ligand in Stille coupling reactions.1
1. Farina, V.; Mercier, C.; Chabardes, P. Pure Appl. Chem . 1996, 68 , 73.
As
(59-61)
1.225
HYDROLYTIC SENSITIVITY: 4: no reaction with water under neutral conditions
[603-32-7]
TSCA
EC 210-032-9
HMIS: 3-2-0-X
5g
¥9,300
25g ¥23,500
OMAS080
(CH3)2 N
N(CH3)2
As
毒物
TRIS(DIMETHYLAMINO)ARSINE
C6H18AsN3
207.15
55 / 10
1.1248
1
N(CH3)2
Employed in CVD of epitaxial films.
1. Zimmer, M. Eur. Patent 460598 A1, 1991.
HYDROLYTIC SENSITIVITY: 8: reacts rapidly with moisture, water, protic solvents
[6596-96-9]
HMIS: 4-3-1-X
25g
¥94,500
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