Surface Science 630 (2014) 356–360 Contents lists available at ScienceDirect Surface Science journal homepage: www.elsevier.com/locate/susc Mapping spin distributions in electron acceptor molecules adsorbed on nanostructured graphene by the Kondo effect Manuela Garnica a,b, Fabián Calleja b, Amadeo L. Vázquez de Parga a,b,⁎, Rodolfo Miranda a,b a b Departamento de Física de la Materia Condensada and IFIMAC, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Cantoblanco, 28049 Madrid, Spain a r t i c l e i n f o Available online 1 August 2014 Keywords: Magnetic molecules Graphene LT-STM/STS Kondo effect a b s t r a c t Electron acceptor molecules adsorbed on nanostructured graphene grown on Ru(0001) were investigated by low temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS). Our experiments reveal a considerable charge transfer from the substrate to the single molecules leading to the partial occupation of the LUMO of the neutral molecules. The nanostructured graphene modulates the hybridization between the transferred unpaired electron and the ruthenium conduction electrons leading to the appearance of a Kondo effect. Spatially resolved LT-STS allows the high resolution mapping of the spin distribution of the charge transferred and a characteristic inelastic Kondo features associated to specific vibrational modes. © 2014 Elsevier B.V. All rights reserved. 1. Introduction Being able to detect and visualize the spin distribution at surfaces with atomic detail allows us to explore a rich variety of magnetic properties. Recent developments in low temperature scanning tunneling microscopy (LT-STM) and spectroscopy (STS) have permitted the interrogation of spin-related phenomena down to the atomic scale. Among them, the study of Kondo impurities at surfaces has attracted a widespread interest. The Kondo effect was discovered in the 1930s [1] and explained initially in the 1960s [2]. In 1964, J. Kondo gave the first explanation for the anomalous increase of the resistivity of some, in principle pure, bulk materials at low temperatures. His explanations were based on a spin-flip scattering process due to the presence of magnetic impurities in the metallic samples. In late 1990s, several groups performed the first experiments where single magnetic adatoms were deposited on non-magnetic surfaces, e.g., Ce on Ag(111) [3], Co on Au(111) [4] or Mn on Al2O3 [5]. To explain the behavior of these systems, the theoretical model by P.W. Anderson in 1961 for a single magnetic impurity diluted in a metal can be applied [6,7]. The model considers the hybridization between the conduction electrons of the metal and the unpaired electron state in the impurity, dismissing all the others electronic states of the impurity. In this situation, the electrons from the STM tip have two possible channels to tunnel into the sample. They can tunnel directly into the empty states of the sample or indirectly via a spin-flip process into the localized impurity state. Therefore, when Kondo screening exists, the STS spectrum presents a resonance at εF spatially localized at the magnetic impurity. This resonance is the result of the quantum ⁎ Corresponding author. E-mail address: [email protected] (A.L. Vázquez de Parga). http://dx.doi.org/10.1016/j.susc.2014.07.028 0039-6028/© 2014 Elsevier B.V. All rights reserved. interference of the discrete state of the impurity and the continuum of the conduction electrons in the metal and can be described by the Fano equation [8], as was demonstrated by V. Madhavan et al. [4]. In this context, the tunneling conductance is given by: dI/dV ∝ (ε + q) / (1 + ε) where q is the so-called factor form, ε = (eV − ε0) / Γ is a reduced energy, ε0 is the energy shift of the resonance from the Fermi level and Γ is the half-width at half-maximum of the resonance given by [9,10]: 2Γ = [(αkBT)2 + (2kBTK)2]1/2. Then, the half-width at halfmaximum of the Kondo resonance presents a dependence of the temperature and defines the characteristic Kondo temperature, Tk. The Kondo temperature reflects the hybridization between the magnetic impurity and the substrate and, in general, due to the reduced coupling strength between the impurity and the conduction electrons on a metallic surface, Tk is usually lower for a magnetic impurity deposited on a surface than for one embedded in the bulk. In this paper we demonstrate that STS permits the high-resolution mapping of the spin distribution of the charge transferred from a graphene substrate into adsorbed, isolated electron-acceptor molecules. We illustrate this principle using two related electron-acceptor molecules: namely 7,7,8,8-tetracyano-p-quinodimethane (TCNQ) and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-p-quinodimethane (F4-TCNQ) adsorbed on graphene grown on Ru(0001). The molecules are nonmagnetic in the gas phase, but, upon adsorption, they accept charge from graphene, creating an unpaired electron ground state [11] and developing magnetic moments. The decoupling of the molecular orbitals from the electron sea of the metallic substrate facilitated by the graphene monolayer allows us to image the spatial distribution of the Kondo resonance and the corresponding spin distribution with much higher resolution than in the case of direct molecular adsorption on metals [12,13]. The spatial maps of the Kondo resonances obtained by local Scanning Tunneling Spectroscopy (STS) at low temperature are M. Garnica et al. / Surface Science 630 (2014) 356–360 compared to the charge distribution and show that the spin distribution might be delocalized all over a given molecular orbital or localized in certain bonds depending on the details of the charge being transferred from the graphene substrate to the molecule. The singly charged molecules also show characteristic inelastic Kondo features associated to specific vibrational modes. 2. Methods The experiments were done in an ultra high vacuum (UHV) chamber with a base pressure of 1 × 10−10 mbar, equipped with standard facilities for surface preparation, low energy electron diffraction, Auger spectroscopy and a low temperature scanning tunneling microscope (LT-STM) working at 4.6 K. The substrate is a single crystal of ruthenium exposing the (0001) surface, which was cleaned in UHV by ion sputtering and annealing to 1400 K. Following this treatment, the Ru surface was exposed to an oxygen partial pressure of 6 × 10−7 mbar for 2 min (32 L) and flashed at 1400 K to remove the oxygen from the surface producing an atomically clean and ordered surface. The graphene samples are then grown by thermal decomposition of ethylene. The Ru crystal, kept at 1150 K in UHV, was exposed to a partial pressure of ethylene of 1 × 10−8 mbar for 10 min (48 L). The TCNQ and F4-TCNQ molecules were evaporated at 353 K from the evaporator over the graphene/Ru(0001) sample held at room temperature. High resolution STM images were acquired in a constant-current mode at 4.6 K and all the data were analyzed with WsXM software [14]. 357 3. Results and discussion Graphene grown on metallic substrates is an efficient way to produce large graphene samples with a high structural quality; however, the properties of the graphene layer can be strongly modified depending the metallic substrate used. This is the case of graphene grown on Ru(0001) where the registry between carbon and ruthenium atoms changes, going from no interaction in the high areas to strong interaction in the low ones producing the appearance of a moiré superstructure [15]. This modulation in the chemical bonding between graphene and ruthenium within the moiré unit cell modifies the surface dipole that has a direct influence on the surface potential which is 0.25 eV lower in the low areas of the moiré pattern [16,17]. In-situ STM imaging of graphene monolayers on Ru(0001) reveals an ordered triangular array of bumps with a periodicity of almost 3 nm [18–21]. Fig. 1a and b show representative STM images recorded at 4.6 K after the deposition of TCNQ and F4-TCNQ molecules on graphene/ Ru(0001) at room temperature. At this particular bias voltage, one can distinguish both the characteristics protrusions of the moiré superstructure and the molecules. At 300 K the surface diffusion of molecules is large and it is necessary to cool the sample down to 4.6 K and use low tunneling currents (below 40 pA) for the STM/STS measurements to image individual molecules. In both cases, the molecules lie planar and present a spatial selectivity in the adsorption. As it was previously studied for other molecules in the same substrate [22–26], this behavior has its origin in the nanostructured graphene surface which forces the molecules to adsorb in the lower areas of moiré pattern, where the Fig. 1. STM images of early stages coverage of (a) TCNQ (10 × 10 nm2, Vb = −1 V and It = 50 pA) and (b) F4-TCNQ (10 × 10 nm2, Vb = −1 V and It = 10 pA at 4.7 K. (c) and (d) STS data measured on graphene (red curve) and on a molecule (black curve) of the corresponding images (a) and (b). Three features, two at negative bias voltage (occupied states) and one at positive bias voltages (empty states) marked with black arrows, not present in the curve measured on graphene can be observed. The bottom panels of (a) and (b) show the chemical structure (white = hydrogen atoms, cyan = carbon atoms, dark blue = nitrogen atoms, yellow = fluorine atoms) and calculated LUMO for the neutral gas-phase TCNQ and F4-TCNQ molecules respectively. 358 M. Garnica et al. / Surface Science 630 (2014) 356–360 lower surface potential allows an effective charge transfer and a stronger interaction between the molecules and the substrate in these areas. Taking advantage of the high intramolecular resolution facilitated by decoupling from the electron sea of the Ru substrate provided by the graphene layer, one can easily distinguish the molecules exclusively on the basis of the frontier molecular orbital shape. In particular, the topographic images were recorded at − 1 V, i.e. imaging the occupied states, and the intramolecular resolution of TCNQ and F4-TCNQ resembles the lowest unoccupied molecular orbital (LUMO) of the neutral molecules in gas-phase (see Fig. 1a and b). The observation of this orbital below the Fermi level is a clear indication of the effectiveness of the charge transfer from graphene to the isolated molecules which lead to the partial occupation of the LUMO of the neutral molecule [11]. A close inspection of the Fig. 1a also reveals the coexistence of isolated TCNQ molecules with dimers and chains of TCNQ molecules. Previous studies show that the origin of this interaction can be understood by a combination of hydrogen bonds and delocalization of charge across a new spatially-extended intermolecular orbital [26]. On the other hand, for F4-TCNQ the presence of the fluorine atoms prevents the formation of hydrogen bonds, and, accordingly, the molecules appear always isolated. A definite experimental evidence of the charge transfer between the molecules and graphene is given by recording the spatially resolved STS in single molecules; see Fig. 1c and d. In both cases, the spectrum taken on the graphene surface (red curve) is essentially featureless when measured using the low tunneling currents needed to simultaneously image the individual molecules. It only presents the already known asymmetry between the occupied and empty density of states when moving from the ripples to the low areas [19]. On the contrary, the spectrum measured on the molecules (black curve) shows three clear features marked with black vertical arrows. For negative bias voltages, there are two peaks at − 2.0 V and − 0.86 V and for positive bias voltages; it presents higher intensity in the differential tunneling conductance around +1.0 V than the spectra measured in graphene. As it was previously discussed for TCNQ [26], due to the transfer of one electron to the F4-TCNQ molecules from the graphene/Ru(0001) surface to the LUMO of the neutral molecule, this orbital splits in two: single occupied molecular orbital (somo) and single Unoccupied Molecular Orbital (SUMO). Therefore, the peaks of STS spectra can be identified with the resonance through the highest occupied molecular orbital (HOMO) (−2.0 eV), SOMO (−0.86 eV) and SUMO (1 eV). The localization of this unpaired electron in the SOMO gives rise to the development of a magnetic moment in the molecules of the order of 0.4 μB [26]. As mentioned in the introduction, an experimental proof of the presence of a magnetic moment in a single molecule or adatom adsorbed on a non-magnetic metallic surface is the appearance of a Kondo resonance. Fig. 2 shows the STS experiments performed on a single TCNQ molecule adsorbed on graphene/Ru(0001) close to the Fermi level. The dI/dV spectra measured with the STM tip held on different locations in the TCNQ molecule show a prominent peak which is absent in the graphene surface (Fig. 2c). We identify it as a Kondo resonance due to the interplay between the conduction electrons of graphene/Ru(0001) and the magnetic moment associated with the TCNQ molecules. The inset of Fig. 2c shows the spatial map of the Kondo resonance. First principle calculations [26] indicate that the unpaired electron added to TCNQ, as well as the calculated spin distribution, is delocalized all over the SOMO orbital. The map of the Kondo resonance mirrors indeed the shape of the orbital (and the topographic image of adsorbed TCNQ). Moreover, the intensity of the Kondo peak exhibits a strong dependence on the STM tip location within the TCNQ molecules. The blue and red spectra were fitted to the Fano expression. The resulting fitting Fig. 2. Inelastic Kondo effect. (a) Topographic STM image (2.4 × 2.4 nm2, Vb = −0.1 V, It = 30 pA) of a TCNQ molecule on graphene/Ru(0001) with a TCNQ model superimposed. The color circles indicate the spatial location where the spectra shown in (c) have been recorded. (b) dI/dV map at Vb = −45 mV acquired simultaneously with (a). A TCNQ model is also superimposed. (c) dI/dV spectra measured with the STM tip held on graphene and on different locations within the TCNQ molecule where Kondo resonance is observed (Vmod = 8.5 mV RMS and ν = 703 Hz). The solid lines represent the Fano fitting to the experimental data (Blue: q = 40, ε0 = 1.2 mV and Γ = 5 ± 1 mV. Red: q = 10, ε0 = 1.2 mV and Γ = 5 ± 1 mV). The black arrows indicate the inelastic Kondo features. The inset shows a Kondo maps (dI/dV map at Vb = 1 mV) (adapted from [26]). M. Garnica et al. / Surface Science 630 (2014) 356–360 parameters are q = 40, ε0 = 1.2 meV and Γ = 5 ± 1 mV for the blue curve and q = 10, ε0 = 1.2 meV and Γ = 5 ± 1 mV for the red one. These large values of q are expected for molecules weakly interacting with the substrate. The experiments have been performed at 4.6 K and therefore, we expect to be in the T«TK regime. In this situation one can obtain an estimation of the Kondo temperature from the width of the peak (TK = Γ / kB). The estimated Kondo temperature is 58 K which is on the range expected for a weakly interacting molecule. Nevertheless, it should be mentioned that a complete analysis of the width of the resonance with the temperature would be necessary to obtain an accurate value of TK. However, for single molecules, these experiments cannot easily be performed due to the high mobility of the isolated TCNQ molecules when the temperature increases. The spectrum measured with the STM tip held above the center of the molecule (green spectra of Fig. 2c) shows that the Kondo resonance almost disappears due to the node in the wavefunction of the SOMO orbital, while two side bands around ± 45 mV come up. The origin of these peaks is an interplane molecular vibration of the central ring of the TCNQ molecule [27,28], which is strongly coupled to the SOMO. The dI/dV map of Fig. 2b shows the spatial distribution of the peak at − 45 mV. The maximum of the signal corresponds exactly to the area of the TCNQ molecule around the central ring. The inelastic Kondo effect was predicted in quantum dots coupled to vibrational modes [29] and has also been observed in electron transport studies through C 60 molecule in the Kondo regime, using a mechanically controllable break junction [30]. For a bias voltage higher than a quantum vibrational mode of the molecule, a new tunneling channel is opened. Then, an electron can tunnel through the molecule, exciting its internal states and decaying in the impurity ground state. The result is the excitation of the vibrational mode of the molecule in addition to a spin-flip process. The effect in the DOS is the appearance of two symmetric peaks at the vibrational mode 359 energy superimposed to the characteristic steps of the ordinary inelastic tunneling processes. Similar results were reported for TCNQTFF layers on Au(111) [31]. In this case, one electron is donated from TTF to TCNQ giving rise to a Kondo effect due to the interaction between the unpaired electron from TCNQ and the conduction electrons of the Au substrate. F4-TCNQ is a slightly stronger acceptor than TCNQ in which the hydrogen atoms of the periphery are substituted by fluorine. Adsorption on graphene/Ru(0001) takes place in the same low region of the moiré as for TCNQ. Upon adsorption, F4-TCNQ accepts almost exactly one electron per molecule from the graphene substrate, as demonstrated by the spectrum in Fig. 1d. The added charge, however, is not distributed homogeneously over the molecule, but rather concentrated in its dicyanomethylene (C(CN2)) terminations. Fig. 3a reproduces the topographic image of an isolated adsorbed molecule superimposed with a scheme of the molecule. Fig. 3c shows the corresponding differential conductance spectra at different locations of F4-TCNQ molecules adsorbed on graphene/Ru(0001) at low coverage. In this case, a sharp resonance appears at the Fermi level in the dicyanomethylene (C(CN2)) terminations of the molecules. This peak can be fitted perfectly to a Fano line shape (q = −8, ε0 = 2 meV and Γ = 6 ± 1 mV) leading to a TK = 69.6 K. This Kondo temperature is similar to TK for individual TCNQ on graphene/Ru(0001) indicating a similar coupling between the molecules and graphene in both cases. The inset in Fig. 3c reproduces the spatial map of the Kondo resonance which now is strongly localized in the C(CN2) ends and looks rather different from the orbital shape and the topographic image shown in Fig. 3a. Thus, the localized character of the charge transfer results in a localized spin distribution. As in the case of TCNQ, when the tip is located on the center of the F4-TCNQ molecules, the Kondo resonance is gone and two symmetric bands appear at ± 50 mV. We attribute these peaks to an inelastic Kondo effect due to an interplane molecular vibration of the central Fig. 3. Inelastic Kondo effect. (a) Topographic STM image (2.05 × 2.05 nm2, Vb = −0.05 V, It = 10 pA) of a F4-TCNQ molecule on graphene/Ru(0001) with a F4-TCNQ model superimposed. The color circles indicate the spatial location where the spectra shown in (c) have been recorded. (b) dI/dV map at Vb = −50 mV acquired simultaneously with (a). A F4-TCNQ model is also superimposed. (c) dI/dV spectra measured with the STM tip held on graphene and on different locations within the F4-TCNQ molecule (Vmod = 8.5 mV RMS and ν = 703 Hz). The solid line represent the Fano fitting to the experimental data (q = −8, ε0 = 2 mV and Γ = 6 ± 1 mV). The inset shows a Kondo maps (dI/dV map at Vb = 1 mV). 360 M. Garnica et al. / Surface Science 630 (2014) 356–360 ring of the molecule. The substitution of hydrogen atoms by heavier fluorine atoms modifies the vibrational assignment of the in-plane normal modes of the molecule and the energy associated to these inelastic peaks is slightly higher than in the case of TCNQ molecules on graphene/ Ru(0001). The vibrational features are also localized on the center of the F4-TCNQ molecules as can be seen in the Fig. 3b; however, they correspond to a different vibrational mode of the radical anion [32]. 4. Conclusions [6] [7] [8] [9] [10] [11] [12] [13] [14] In summary, we demonstrate that mapping the spin distribution in singly-charged, purely organic molecules adsorbed on graphene/ Ru(0001) can be done by imaging the spatial distribution of the Kondo resonance by dI/dV maps obtained with LT-STS. 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