FREON RIE PROCEDURES
Scope
This document establishes the procedures for PlasmaLab Freon/O2 Reactive Ion Etch (RIE)
System. The tool is only for SiO2 and Si3N4 film etch. Three gases connect with the system: Gas1Freon14 (CF4), Gas 2-O2 and Gas3-Freon23 (CHF3). Gas1 and Gas3 are etching gases. Gas2 is for
the chamber clean. After long time etch (one hour, for example), please clean the chamber after
use. If you find the chamber is contaminated after process, please clean the chamber before you
leave. For your convenient, different process number is set up for different gas: Process 4 is for Gas
1, Process 2 is for Gas 2, and Process 3 is for Gas 3.
Check previous entry in log sheet that shows no problem. Open the gas cylinder when the gas is
used. Close the gas cylinder after the process finish. If the process takes over 2 minutes, please use
auto operation; if the process takes 1 minute or shorter, please use manual operation.
Auto Operation
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Press Process and Number to select gas. Process 4 - Gas1, Process 2 - Gas2 and Process 3 Gas3.
Set the key switch to CHANGE STORED PARAMETER.
May press Read and Gas, Throttle Pressure, or Power Level to check the parameters.
Press Set and GAS-n to set percent of gas flow.
Press Set and Power Level to set percent of power desired (20%~90W).
Press Set and Throttle Pressure to set process pressure.
Press Set and Timer to set process time.
Press Read and other gas to check the flow. It should be zero.
Turn the key switch to MANUAL OPERATION.
Press Manual and Vent.
Wait for vent cycle until Vent light is on.
Open the chamber by pushing Joystick to the right, and at same time pushing the Black Button
down.
Press Manual and Vent again to close Vent gas.
Load your sample(s).
Close the chamber by pushing Joystick to the left, and at same time pushing the Black Button
down.
Open the gas cylinder.
Press Run.
Wait for the process finish until Vent light is on.
Open the chamber by pushing Joystick to the right, and at same time pushing the Black Button
down.
Press Manual and Vent again to close Vent gas.
Take out the sample(s).
Check the chamber to make sure that it is not contaminated.
Super User: Yaguang Lian
[email protected]
3-8051
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Close the chamber by pushing Joystick to the left, and at same time pushing the Black Button
down.
Press Manual and Rough.
Wait for the chamber pumping down until HI-VAC light is on.
Close the gas cylinder.
Input the log sheet.
Manual Operation
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Bring your own timer
Press Process and Number to select gas. Process 4 - Gas1, Process 2 - Gas2 and Process 3 Gas3.
Set the key switch to CHANGE STORED PARAMETER.
May press Read and Gas, Throttle Pressure, or Power Level to check the parameters.
Press Set and GAS-n to set percent of gas flow.
Press Set and Power Level to set percent of power desired (20%~90W).
Press Set and Throttle Pressure to set process pressure.
Press Read and other gas to check the flow. It should be zero.
Turn the key switch to MANUAL OPERATION.
Press Manual and Vent.
Wait for vent cycle until Vent light is on.
Open the chamber by pushing Joystick to the right, and at same time pushing the Black Button
down.
Press Manual and Vent again to close Vent gas.
Load your sample(s).
Close the chamber by pushing Joystick to the left, and at same time pushing the Black Button
down.
Press Manual and Rough.
Wait for the chamber pumping down until HI-VAC light is on.
Open the gas cylinder.
Press Manual and Gas-n to open the process gas.
Press Manual and Throttle Pressure to get the process pressure.
Press Manual and Power Level to start plasma.
Start your timer when the plasma ignites.
Press Manual and Power Level to stop the plasma when the process time is reached.
Press Manual and Throttle Pressure to close the process pressure.
Press Manual and Gas-n to close the process gas.
Press Manual and Vent.
Wait for vent cycle until Vent light is on.
Open the chamber by pushing Joystick to the right, and at same time pushing the Black Button
down.
Press Manual and Vent again to close Vent gas.
Take out the sample(s).
Close the chamber by pushing Joystick to the left, and at same time pushing the Black Button
down.
Press Manual and Rough.
Super User: Yaguang Lian
[email protected]
3-8051
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Wait for the chamber pumping down until HI-VAC light is on.
Close the gas cylinder.
Input the log sheet.
Revised on April 24, 2008
Freon RIE Chamber Clean Procedures
After a long time etching (for example, over 1hr. process), the chamber must be cleaned. Please
follow the procedures below to clean the chamber.
1. Open the chamber,
2. Clean the chamber using scotch-brite with DI water and clean room wipes with IPA by
hand,
3. Close the chamber,
4. Open O2 cylinder,
5. Select Process 2 to run O2 clean:
Pressure: 350mTorr
Gas 2-O2: 50%
RF power: 20%
Time: 20-30mins
6. Double check the chamber to make sure that it is clean,
7. Pump down the chamber,
8. Close O2 cylinder,
9. Ready to use the system,
10. Thank you for your cooperation!
Freon RIE System Etching Rate of Basic Recipes
Super User: Yaguang Lian
[email protected]
3-8051
1. Process 4. Gas 1-Freon 14 (CF4), 60% flow rate (60sccm), 35mTorr pressure, 20% RF power
(90W)
LPCVD Si3N4=376Å/min
STS PECVD Si3N4=706Å/min
Thermal SiO2=211Å/min
PECVD SiO2=230Å/min
Silicon=421Å/min
AZ 5214=490Å/min
2. Process 3. Gas 3-Freon 23 (CHF3), 60% flow rate (60sccm), 35mTorr pressure, 20% RF power
(90W)
LPCVD Si3N4=108Å/min
STS PECVD Si3N4=100Å/min
Thermal SiO2=144Å/min
PECVD SiO2=171Å/min
Silicon=53Å/min
PMMA=177Å/min
Updated 10/02/06, Yaguang Lian, [email protected], X3, 8051
Super User: Yaguang Lian
[email protected]
3-8051