FLM1314-3F
X, Ku-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 35.0dBm (Typ.)
High Gain: G1dB = 5.5dB (Typ.)
High PAE: ηadd = 25% (Typ.)
Low IM3 = -45dBc@Po = 24.0dBm
Broad Band: 13.75 ~ 14.5GHz
Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FLM1314-3F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
25.0
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
1400 2100
mA
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
Transconductance
gm
VDS = 5V, IDS = 900mA
-
1300
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS = 70mA
-0.5
-1.5
-3.0
V
IGS = -70µA
-5.0
-
-
V
34.0
35.0
-
dBm
5.0
5.5
-
dB
-
900
1100
mA
-
25
-
%
-
-
±0.6
dB
-42
-45
-
dBc
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Power-added Efficiency
Idsr
ηadd
VDS =10V,
IDS = 0.6 IDSS (Typ.),
f = 13.75 ~ 14.5 GHz,
ZS=ZL= 50 ohm
Gain Flatness
∆G
3rd Order Intermodulation
Distortion
IM3
f = 14.5GHz, ∆f = 10 MHz
2-Tone Test
Pout = 24.0dBm S.C.L.
Thermal Resistance
Rth
Channel to Case
-
5.0
6.0
°C/W
∆Tch
10V x Idsr x Rth
-
-
66
°C
Channel Temperature Rise
CASE STYLE: IA
Edition 1.4
August 2004
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
1
FLM1314-3F
X, Ku-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
30
24
Output Power (S.C.L.) (dBc)
Total Power Dissipation (W)
30
18
12
6
0
50
100
150
200
VDS=10V
f1 = 14.5 GHz
f2 = 14.51 GHz
2-tone test
28
Pout
26
-15
24
-25
IM3
22
-35
20
-45
18
-55
IM3 (dBc)
POWER DERATING CURVE
Case Temperature (°C)
15
19
17
21
23
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
36
Output Power (dBm)
Output Power (dBm)
36
VDS = 10V
P1dB
Pin = 31dBm
35
29dBm
34
27dBm
33
32
VDS = 10V
f = 14.25 GHz
34
Pout
32
30
28
30
26
20
ηadd
24
25dBm
10
31
18
13.7
13.9
14.1
14.3
20
22
24
26
28
Input Power (dBm)
14.5
Frequency (GHz)
2
30
32
ηadd (%)
OUTPUT POWER vs. FREQUENCY
FLM1314-3F
X, Ku-Band Internally Matched FET
S11
S22
+j50
S21
S12
+90°
+j100
+j25
14.5
14.3
14.7
13.55 GHz
13.55 GHz
13.7
13.7
13.9
+j10
14.1
10
25
14.7
14.5
+j250
13.9
14.7
14.3
14.1
13.7 13.9
13.9
180°
50Ω 14.3
13.7
14.1
14.5 14.3
14.5
14.7
13.55 GHz
13.55 GHz
-j10
1
2
3
0°
4
SCALE FOR |S21|
SCALE FOR |S12|
0
14.1
-j250
0.1
-j25
-j100
0.2
-j50
FREQUENCY
(MHZ)
1355
1360
1365
1370
1375
1380
1385
1390
1395
1400
1405
1410
1415
1420
1425
1430
1435
1440
1445
1450
1455
1460
1465
1470
-90°
S11
MAG
.522
.503
.485
.461
.440
.418
.394
.370
.344
.322
.299
.275
.255
.235
.220
.205
.195
.190
.190
.193
.199
.212
.223
.245
ANG
60.0
54.7
49.3
43.5
37.4
31.2
24.4
17.6
10.0
2.1
-6.0
-15.0
-24.8
-35.9
-46.3
-58.6
-71.6
-85.3
-98.6
-111.2
-123.6
-135.6
-146.3
-155.5
S-PARAMETERS
VDS = 10V, IDS = 900mA
S21
S12
MAG
ANG
MAG
ANG
MAG
ANG
1.928
1.973
2.012
2.044
2.080
2.114
2.145
2.160
2.181
2.187
2.197
2.196
2.193
2.186
2.174
2.152
2.133
2.107
2.081
2.042
2.021
1.984
1.944
1.909
.527
.511
.496
.475
.458
.438
.419
.398
.376
.355
.333
.318
.297
.278
.263
.245
.232
.219
.209
.205
.204
.206
.205
.211
89.5
84.8
79.6
74.6
69.3
63.7
57.5
50.7
44.2
36.7
29.1
21.3
12.3
3.8
-5.8
-16.4
-27.5
-37.7
-49.3
-60.7
-71.8
-83.4
-93.7
-104.6
-160.3
-165.0
-169.9
-175.0
179.9
174.5
169.3
163.8
158.3
153.1
147.5
142.0
136.5
130.8
125.4
119.9
114.5
109.0
103.7
98.7
93.4
88.3
83.4
78.2
3
.071
.079
.083
.087
.090
.096
.102
.105
.109
.115
.120
.123
.126
.128
.132
.133
.137
.138
.139
.139
.140
.141
.139
.138
-179.5
176.8
171.6
165.4
161.9
156.3
150.8
146.9
139.7
136.8
130.8
127.0
121.4
115.3
110.1
104.5
100.3
94.1
89.4
84.0
79.5
74.9
69.1
65.4
S22
FLM1314-3F
X, Ku-Band Internally Matched FET
1.5 Min.
(0.059)
Case Style "IA"
Metal-Ceramic Hermetic Package
1
0.1
(0.004)
9.7±0.15
(0.382)
2-R 1.25±0.15
(0.049)
4
2
3
1.8±0.15
(0.071)
1.5 Min.
(0.059)
0.5
(0.020)
3.2 Max.
(0.126)
13.0±0.15
(0.512)
1.15
(0.045)
0.2 Max.
(0.008)
8.1
(0.319)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
16.5±0.15
(0.650)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
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