Silicon Integration Initiative Introduction to Chip-Package Interface Protocol Standard for 3D-IC Power Distribution Network Interoperability For 3D Stacked Die Design Flows Norman Chang, VP and Sr. Product Strategist Apache Design, Inc. (subsidiary of ANSYS) Oct. 9, 2012 Innovation Through Collaboration Silicon Integration Initiative 3D-IC Chip-Package Interface Protocol - Goal 2 • Power grid analysis with optional package/PCB netlist for DC drop, dynamic voltage drop, LdI/dt noise, AC analysis (impedance and resonance), and current density/electromigration for wires, ports, and TSVs • Optimization of PDN via the interchange of CPIP for 3D-IC what-if analysis and parameterized optimization flow • Enabling signal integrity analysis, particularly for jitter analysis of chip-to-chip communication with vertically stacked-die or through a silicon interposer channel 3D Stack 2.5D Stack SoC/Custom Die Re-usable Die 1 TSV Reusable Die Si Interposer TSV Package Innovation Through Collaboration TSV SoC/Custom Die Package PCB Silicon Integration Initiative Chip-Package Interface Protocol - Coverage • Unified interface protocol for the following interface definition including both Power/Ground and Signal ports – die <-> die – die <-> pkg – pkg <-> PCB • Compact equivalent circuit in SPICE format for CPIP-compliant models Innovation Through Collaboration Silicon Integration Initiative Chip-Package Interface Protocol Need for Interposer-based Design Die 1 Die 2 CPIP (die <-> die) CPIP (die <-> die) Interposer CPIP CPIP (die <-> Pkg) Package CPIP (Pkg <-> PCB) PCB Innovation Through Collaboration Silicon Integration Initiative Chip-Package Interface Protocol Need for Vertically Stacked Die Die 2 CPIP (die <-> die) Die 1 CPIP (die <-> Pkg) Package CPIP (Pkg <-> PCB) PCB Innovation Through Collaboration Silicon Integration Initiative Chip-Package Interface Protocol - Overview General Info Model Properties Signal Ports Power Ground Ports • CPIP Version • Design Name • Units • Info on CPIP-ready model generation such as simulation time, time step, command options used, and excitation settings, etc. • CompName-PinName ; X,Y location, layer • NodeName ; NetName ; PadLandingMetal; SignalPortGroup • PortType (die2die, die2pkg, internal, pkg2die, or other) • All fields same as in signal ports • PadType (power, ground, or other) Innovation Through Collaboration Silicon Integration Initiative Example Target Application • CPIP-compliant model of a die or dies and CPIP-compliant pkg/PCB model can be incorporated in a concurrent power integrity simulation of a 3D-IC design Memory Die (40nm) Logic Die (28nm) LEF/DEF/GDS CPIP-compliant Model Silicon Interposer Die (65nm) LEF/DEF/GDS Package PKG netlist in CPIP-compliant Model PCB PCB netlist in CPIP-compliant Model Innovation Through Collaboration Concurrent analysis Silicon Integration Initiative Concurrent 3D-IC Voltage Drop Analysis Example • Input multi-die design and corresponding process data (can be of different technologies), all at once • Impact from shared P/G nets and decap in interposer die can be factored into memory and logic die DvD Map of 3-die concurrent analy Logic Die LEF/DEF, 28nm tech Memory Die LEF/DEF, 40nm tech Power Integrity Tool Concurrent Analysis Memory Die Logic Die Silicon Interposer LEF/DEF, 65nm tech Pkg Netlist in CPIP-compliant model Innovation Through Collaboration Silicon Interposer Silicon Integration Initiative CPIP-based Multi-die IR/DvD Analysis Example • Most suitable when one die is external without the complete design database • CPIP-compliant model is a die model with RLC network and current profile with a CPIP header, generated by Power Integrity Tool(s) • Enables simple hand-off and fast turnaround time Logic Die LEF/DEF, 28nm tech Silicon Interposer LEF/DEF, 65nm tech DvD Memory Die Pkg Netlist in CPIP-compliant model LEF/DEF, 40nm tech - die concurrent analysis Power Integrity Tool CPIP-compliant model Memory Die Map of 3 Power Integrity Tool Innovation Through Collaboration Logic Die Silicon Interposer Silicon Integration Initiative Application of CPIP-ready Models in 3D-IC Test Case 10 • Connected in a face2back manner • “Top die” connects to “package” through “bottom die” • Bottom die PDN contains TSVs that connect its M1 to back-side metal, which connects to top die using “copper pillars” • CPIP-compliant model of package used Innovation Through Collaboration 11 CONCURRENT MODEL BASED Silicon Integration Initiative 3D-IC Test Case Description for CPIP-based Applications Layout view of both die in concurrent mode; pkg in CPIP-compliant model CPIP-ready model CPIP-ready model Model of top die (CPIPcompliant model) hooked to bottom die layout; pkg in CPIP-ready model CPIP-compliant model Innovation Through Collaboration Silicon Integration Initiative Top Die Demand Variation Example of a 3D-IC Transient Analysis with CPIPs 12 Case A: top half of the top die is active Case B: left half of the top die is active Bottom Die (left) affected by operation of the Top Die (right) Innovation Through Collaboration Silicon Integration Initiative Interface with Other 3D-IC Open3D Workgroups (Thermal and Pathfinding WGs) • Shared 3D-IC assembly info for stack-up and per die placement information • Standard per die power density map for 3D-IC thermal analysis (work done with Thermal WG on the standard) • Standard per die thermal map for thermal-aware electrical analysis and CPIP-ready model generation (work done with Thermal WG on the standard) Power Density Map Innovation Through Collaboration Thermal Map Silicon Integration Initiative Summary • Current status A final draft of CPIP document has been completed in PDN WG, and is ready to be submitted to the TAB-level for review as v1.0 • Thanks for the hard work of the PDN WG over the past year • Also, thanks to the SRC Interconnect WG for their early exploration of the 3D-IC Interface Standard and for their contribution to the 3D-IC term definition Innovation Through Collaboration Silicon Integration Initiative Current PDN WG Participants Innovation Through Collaboration
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