Short-Circuit Diffusion in Crystals 3.205 L6 11/5/03 -1-� "[BCA] "[BCA] Fig. Fig. X.Y" X.Y" are are from from Balluffi, Balluffi, R. R. W., W., S. S. M. M. Allen, Allen, and and W. W. C. C. Carter. Carter. Kinetics Kinetics of of Materials. Materials. New New York: York: Wiley-Interscience, Wiley-Interscience, 2004. 2004. Courtesy of John Wiley and Sons, Inc. Used Courtesy of John Wiley and Sons, Inc. Used with with permission. permission. Today’s topics:� n Diffusion spectrum in defective crystals n Dislocation core structure and dislocation “short circuits”� n Grain boundary structure n Grain boundary diffusion mechanisms and phenomena� n Some phenomena where short-circuits are important 3.205 L6 11/5/03 -2- Diffusion Paths in Polycrystals� n n n n DXL, bulk (lattice) diffusivity DB, grain boundary diffusivity� DS, (free) surface diffusivity DD , dislocation diffusivity Typical behavior� in fcc metals� [BCA] Fig. 9.1* 3.205 L6 11/5/03 -3-� Grain Boundary Diffusion in NiO� n�Diffusion data from NiO, comparing rates of bulk diffusion and grain boundary diffusion [BCA] Fig. 9.3* 3.205 L6 11/5/03 -4-� Dislocation “Pipe” Diffusion Dislocations, especially edge dislocations, can act as shortcircuit diffusion paths. Dissociated dislocations have cores that are more spread out, connected by a ribbon of stacking fault: t̂ A A B tˆ t̂ A B B A A C B r b Perfect dislocation 3.205 L6 11/5/03 -5- Partial dislocation Grain Boundary Structure� Specification of a grain boundary: five degrees of freedom (at least) Rotation axis r̂� Rotation angle q� Boundary normal n̂� Example: tilt boundaries� 3.205 L6 11/5/03 -6- Grain Boundary Structure, cont’d Twist boundaries Unrelaxed atom positions 3.205 L6 11/5/03 -7- Relaxed atom positions Mechanism of Grain Boundary Diffusion� Vacancies and self-interstitials� Atom jumping events in S5<001>(310) symmetric tilt boundary in b.c.c.-Fe calculated by molecular dynamics using pairpotential model. The ratios of the scales used in the drawing are [1 30] : [310] : [001] = 1 :1 : 5 � vacancy trajectory, confined to grain boundary sites vacancy/interstitial pair creation 3.205 L6 11/5/03 -8-� Grain Boundaries and Impurity Diffusion� n� Diffusivity of Zn along the tilt axes [110] symmetric tilt boundaries in Al as a function of tilt angle, q. 6 4 n� Orientations near the center of the plot, where the boundary diffusivity is small, correspond to orientations with a high density of coincidence sites. Peaks in the plot are orientations corresponding to general boundaries with more open structure. 3.205 L6 11/5/03 -9-� 2 0 0 60 120 q (degrees) [BCA] Fig. 9.2 180 Diffusion on Stationary G.B.s� n Diffusing species initially coats top surface…� A regime� all material� B regime boundary region C regime� core only� 3.205 L6 11/5/03 -10-� [BCA] Fig. 9.4 Grain Boundary Diffusion, cont’d� n�Regime A: Characteristic diffusion distance in bulk > grain size s. [BCA] Fig. 9.4 Fraction of atomic sites in grain boundaries is�h ª 3d s Effective mean squared displacement is D�t = D XL (1� - h)t + D Bht and for h << 1, 3.205 L6 11/5/03 -11- D = D XL + ( 3d s) D B Grain Boundary Diffusion, cont’d� Case C: Characteristic diffusion distance in bulk < atomic spacing < characteristic diffusion distance in grain boundary. • � a diffusing atom visits� only the grain boundaries� [BCA] Fig. 9.4 n Case B: Intermediate regime where 2 XL 2� l <� D t<s •� a diffusing atom visits� only a single grain� [BCA] Fig. 9.4 3.205 L6 11/5/03 -12-� B-Type Diffusion, Stationary g.b.s� [BCA] Fig. 9.7* n�Solve two-dimensional diffusion problem for fast boundary diffusion and relatively slow bulk diffusion, with constant concentration of diffusant at the surface as illustrated. È�Ê ˆ1 4 ˘È� Ê�x1 ˆ˘�� 4 XL c ( x1, y1,t1 ) = expÍ�-Á ˜ y1˙Í1 - erf� ˜˙ Á pt1 ¯ Ë 2 t1 ¯˚ ÍÎ Ë� ˙˚Î�� 3.205 L6 11/5/03 -13- Moving Grain-Boundary Diffusion Source� [BCA] Fig. 9.8 Steady-state diffusion with respect to a frame at the interface migrating at velocity v : r ˆ d Ê XL dc -— ⋅ J = - Á-D - vc˜ = 0 ¯ dx Ë dx which has the solution [( )] c( x) = c0 exp -v D XL x 3.205 L6 11/5/03 -14- Phenomena Involving Short Circuits…� Chiang, Birnie, and Kingery Physical Ceramics, 1997 Section 5.3 on “Single-Phase Sintering” R W Balluffi and A Sutton, Interfaces in Crystalline Materials, 1995, p. 762–763 explains theory of Coble creep� Nieh, Wadsworth, and Sherby, Superplasticity in Metals and Ceramics, Cambridge University Press, 1997. Chapter 3 provides an overview of mechanisms of superplasticity 3.205 L6 11/5/03 -15-
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