Clarkson University
17 International Symposium on
Chemical-Mechanical Planarization
th
Draft Agenda
Symposium on Chemical Mechanical Planarization
August 12 -15, 2012,
Crown Plaza Resort
Sunday, August 12:
CENTER FOR ADVANCED
MATERIALS PROCESSING
12:00 - 5:00 P.M.
Hotel Check-in and CAMP Registration
5:45 - 7:15 P.M.
Cocktail Reception, Adirondack Great Room, (No formal dinner
provided)
at
Clarkson University
announces
Monday, August 13:
7:00- 8:10 AM
Breakfast – MacKenzie’s
MEETING HELD IN GRAND VIEW B
th
17 International Symposium
on
Chemical-Mechanical
Planarization
8:10
A.M.
Session I
8:15
A.M.
Technical Challenges in 14nm FinFET CMP Processes
-- Yongsik Moon, GLOBALFOUNDRIES
8:40
A.M.
An Investigation of the Effect of High Selectivity Slurry on CMP for High
Mobility FinFET Devices -- Iqbal Ali, Michael Willhoff, JinFeng Wang,
Glenn Whitener, Kah-Wee Ang, Tat Ngai, Vivekanand Saikumar, Tricia
Burroughs, Corbet Johnson, Vidya Kaushik, Steve Gausepohl , Joe Piccirillo,
Chris Hobbs, Jeff Dysard, Paul Kirsch; SEMATECH, Cabot Micro and CNSE
9:05
A.M.
CMP Considerations for FinFET -- Theodorus Standaert, IBM
9:30
A.M.
Chemical Mechanical Polishing for Extreme Ultraviolet Llithography Mask
Substrates -- R .Teki, SEMATECH
9:55
A.M.
Coffee Break
August 12-15, 2012
Crowne Plaza Resort
& Golf Club
Lake Placid, NY
Co-chairs:
S. V. Babu, Clarkson University
Manabu Tsujimura, EBARA
Jin-goo Park, Hanyang University
Donald Canaperi, IBM
Joseph Steigerwald, Intel
Matt Prince, Intel
Lee Cook, Dow Electronic Materials
Anurag Jindal. Micron
S.V. Babu: Opening Remarks
Session II
For further information including
registration and final program
contact:
Ms. Leila Boyea
Center for Advanced Materials
Processing
Clarkson University
350 CAMP Bldg.
Clarkson University
Potsdam, NY 13699-5665
Phone: (315) 268-2336
Fax: (315) 268-7615
E-mail: [email protected]
Webstite:
www.clarkson.edu/CAMP
10:20 A.M.
EUV substrate cleaning and requirements: Arun John, SEMATECH
10:45
A.M.
Effect of Pad Wear Rate on Removal Rate and Defect Generation During
Chemical Mechanical Polishing -- Hong Jin Kim, Byoungho Kwon, YoungJun Jang, Kuntack Lee, Yongsun Ko, Samsung Electronics
11:10
A.M.
Study on Polishing Time Variation According to Pad Used Time
-- Ji Chul Yang, Won Moon Jang and Jae-Hyung Won, Samsung Electronics
11:35
A.M.
Investigation of the CMP Roughness and Si/SiO2 Surface
-- JongHeun Lim, Samsung Electronics
12:00
P.M.
Lunch – MacKenzie’s
Monday, August 13 continued:
Session III
Factors Affecting CMP
4:00
P.M.
Slurry Design Evolution -- Rob Rhoades, Entrepix
4:25
P.M.
Chemical Mechanical Polishing of Nickel for Damascene Applications
-- Lieve Teugels, IMEC
4:50
.
P.M.
Development of Ruthenium Chemical Mechanical Polishing for Logic
Devices -- Kihyun Park, Samsung Electronics
5:15
P.M.
Silica – based Ruthenium Slurry
--Michelle Garza and Anne Miller, Fujimi
Chemical Mechanical Planarization
Tool Performance
Consumable Performance
Slurry Performance
0 Process Conditions
Abrasive components
Pad Performance
Chemical components
 Single abrasives
 Oxidizing agents
 Mixed or composite
abrasives
 Passivating agents
 Surfactants
 Other additives
5:40 - 7:00 P.M. Poster Session/ Open Bar – Grand View A
Cu - I: 0.021M Oxalic acid + 5wt% H2O2 + 4mM DBSA + 3wt%
SiO2 @ pH - 3
7:00
Normalized Depth (A)
500
P.M.
Dinner – Olympic Room
0
After Dinner Speaker: “Challenges for 14nm and Beyond -- Beyond Planar
-500
CMOS” --Rama Divakaruni, Chief Technologist, ISDA Alliance, IBM
-1000
-1500
-2000
Initial
After 240sec
After 270sec
Tuesday, August 14:
-2500
1
500
1,000
1,499
1,999
2,498
7:00 - 8:15 A.M. Breakfast – MacKenzie’s
Scan Length (µm)
2
Session IV
8:15 A.M.
SEM Inspection of wafers polished with
various slurries
Commercial Cu
slurry
Cu – I slurry
Cu – II slurry
Ta – I slurry
Tool: Brightfield Defect Detector
8:40
.
A.M.
Reactive species on a ceria particle surface and their influence on oxide and
nitrate removal -- Pradeep Dandu, Clarkson University/Intel
9:05
A.M.
Challenges with Using Highly Selective Ceria-Based Slurries for STI-like
Applications: Michael Wedlake, GLOBALFOUNDRIES
9:30
.
A.M.
Polishing of Ge and InP films -- Shivaji Peddeti, Clarkson University/
GLOBALFOUNDRIES
9:55
A.M.
Coffee Break
3
Tafel plot with and without KIO4
Investigation of Selective Oxide Mechanism for STI
Applications -- Glenn Whitener, Cabot Micro
1.20
0.015M KIO4-pH 9
E Vs SCE, Volts
0.80
0.40
Session V
0.00
-0.40
-0.80 -9
-7
-5
-3
-1
10:45
A.M.
Study on Disappearance Phenomena of Liquid Film and Droplets at Spin
Drying Process-- Kenji Amagai, Kazuki Matsumoto, Takayoshi Kuribara;
Gunma University, Hirokuni Hiyama, Akira Fukunaga, Akira Fukuda, Hiroshi
Nakamura; Ebara Co. Ltd.
11:10
A.M.
PVA Brush Based Post-CMP Cleaning Technology
-- Bradley Wood, Chintan Patel, Kirk Chiu and Paul Magoon, Entegris
4
1
log(|I/A|, A/cm2)
RRs with and without inhibitors
System I:
0.015 KIO4 + 5%
Silica
System II:
0.015 M KIO4 +
inhibitors
5
11:35 A.M.
Cobalt-Compatible pCMP Cleans Technology – Jun Liu, ATMI
12:00 P.M.
Lunch – MacKenzie’s
Tuesday, August 14, continued:
Session VI
4:00 P.M
Supercritical Fluid Applications for LSI and MEMS
-- Eiichi Kondoh, Yamanashi University
4:25
P.M.
Etching and Polishing Behavior of Single and Polycrystalline Silicon in
Alkaline Slurry -- Jin-Goo Park, Hanyang University
4:50
.
P.M.
High Rate Oxide CMP Slurry Development next generation devices
Rutuparna Narulkar and Andrew Carswell --Micron
5:15
P.M.
Study on Micro-Patterned Polishing Pad for SiO2-CMP --Keisuke Suzuki,
Kyushu Institute of Technology
6:00 - 7:00 P.M. Reception at Lake Placid Club
7:00 P.M.
Dinner at Lake Placid Club
After Dinner Speaker:
Wednesday, August 15:
7:00 - 8:00 A.M. Breakfast – MacKenzie’s
Session VII
8:05
A.M.
Study of Pad-Wafer Contact Stress and Correlation to Polishing Rate
-- J. Nair, J. Page, F. Sun, C. J. Yu, S. N. Lu, Cabot Micro and Northwestern
University
.
8:30
A.M
Multi-scale Modeling of CMP Processes,
-- Gwang-Soo Kim, Ankan Kumar, Aaron Lilak, Matthew Prince, Seiichi
Morimoto, Alex Tregub, Intel
8:55
A.M.
Application of Scanning Mobility Particle Sizer (SMPS) to CMP
consumables -- Taesung Kim, Hojoong Kim and Sunjae Jang School of
Mechanical Engineering, SAINT, Sungkyunkwan University, Korea
9:20
A.M.
9:45
A.M.
Advanced Colloidal Silica-Based Acidic CMP Slurry
Yi Guo, Leszek Hozer, Lee Cook--Dow Electronic Materials
10:05
A.M.
Coffee Break
10:30
A.M.
Acidic Barrier Slurry for Cu/Low-k CMP
Jiaying Cai, Richard Wen -- Fujifilm Planar Solutions LLC
10:50
A.M.
Slurry Injection Technology and Flow Rate Reduction for Ebara Polishers
--Len Borucki, Araca
11:15
A.M.
Effect of pattern density and line width on step-height reduction and dishing
of poly-Si patterned wafers using abrasive-free reactive liquids -- Naresh
Penta, Tony Tran, Somesh Peri, Francis Kelley, Leszek Hozer, and Lee Cook,
Dow Electronic Materials
11:40
A.M.
CMP Slurries for FEOL Applications -- Reza Golzarian, BASF
Measurement of the rigidity modulus of polishing pads at small
depths with nano indentation techniques
--Igor Sokolov, Clarkson University
12:05 P.M.
Closing Remarks, S.V. Babu, CAMP
12:10 P.M.
Lunch - MacKenzie’s