NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices Melting points, mechanical properties of nanoparticles and Hall Petch relationship for nanostructured materials R. John Bosco Balaguru Professor School of Electrical & Electronics Engineering SASTRA University B. G. Jeyaprakash Assistant Professor School of Electrical & Electronics Engineering SASTRA University Joint Initiative of IITs and IISc – Funded by MHRD Page 1 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices Table of Content 1. MELTING POINTS OF NANOPARTICLES...........................................................3 1.1 LATTICE CONSTANT OF NANOPARTICLE......................................................................................6 2. MECHANICAL PROPERTIES OF NANOMATERIAL.......................................8 2.1 2.2 2.3 2.4 DIFFUSION............................................................................................................................................9 CHARACTERISING MECHANICAL PROPERTIES OF LOW DIMENSIONAL MATERIALS..10 MECHANICAL PROPERTIES OF CNT.............................................................................................10 MECHANICAL PROPERTIES OF SILICON AND ZNO NANOWIRE…………………………...11 3. HALL-PETCH RELATIONSHIP FOR NANOSTRUCTURED MATERIALS..12 3.1 HALL-PETCH RELATION……………………………………………………………………….....12 3.2 GRAIN SIZE EFFECT AND HALL-PETCH RELATION……………………………………..…...13 4. QUIZ AND ASSIGNMENT......................................................................................14 4.1 SOLUTIONS..........................................................................................................................................15 5. REFERENCES...........................................................................................................15 Joint Initiative of IITs and IISc – Funded by MHRD Page 2 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices 1 Melting point of nanoparticles This lecture provides you the basis of size and shape dependent melting temperature change in the metal nanoparticle Many physical properties of materials, especially the melting point, change when the physical size of the material approaches the micro and nano scales. Melting-point depression is a term referring to the phenomenon of reduction of the melting point of a material with reduction of its size. This phenomenon is very prominent in nanoscale materials which melt at temperatures hundreds of degrees lower than bulk materials. However as the dimensions of a material decrease towards the atomic scale, the melting temperature scales with the material dimensions. Melting-point depression is most evident in nanowires, nanotubes and nanoparticles, which all melt at lower temperatures than bulk amounts of the same material. Changes in melting point occur because nanoscale materials have a much larger surface-to-volume ratio than bulk materials, drastically altering their thermodynamic and thermal properties. As the metal particle size decreases, the melting temperature also decreases Let we analysis the size and shape dependent of metal nanoparticle. Since the melting temperature depression results from the large surface-to-volume ratio, the surface areas of nanoparticles in different shape will be different even in the identical volume, and the area difference is large especially in small particle size. Therefore, it is needed to take the particle shape into consideration when developed models for the melting temperature of nanoparticles. Melting temperature relates to cohesive energy refers of the materials. It is the energy required to divide the metallic crystal into individual atoms. It also refers to heat of sublimation Joint Initiative of IITs and IISc – Funded by MHRD Page 3 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices that can be determined experimentally or can be calculated using cellular method and density function theory. All these methods will calculate only for bulk material. The properties of nanoparticle vary due to the size effect. A simple method to calculate the cohesive energy of nanoparticle was discussed below. The cohesive energy increases with the increase in the particle size. When the particle size is large the cohesive energy will approach bulk material. Let a metallic particle has a diameter of D and is composed of n atoms. The surface area S 0 of the particle is given by S0 = πD 2 (1) Assuming when the particle is separated into n identical spherical atoms and let the diameter of the atoms are d without changing its volume by exerting energy E n we can write 3 4 D 4 d π = n. π 3 2 3 2 3 Where D3 d3 the surface area of n atoms is n= (2) S = nπd 2 (3) when the particle is changed to n atoms the surface area variation is ∆S = nπd 2πD 2 (4) Let E n be the cohesive energy of n atoms and equals to the surface energy of the solid whose surface area is ∆S. The surface energy per unit area at 0 K is γ 0 then En = ∆S ⋅ γ 0 . ( ) (i.e) E n = πγ o nd 2 − D 2 (5) then the cohesive energy per atom is D2 E = πγ o d 2 − (6) n from Eqn. (2) d (7) E = π ⋅ γ o ⋅ d 2 1 − D The lattice parameters can be determined for three different structures bcc, fcc and hcp are written as Joint Initiative of IITs and IISc – Funded by MHRD Page 4 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices (3 π )1 3 a bcc 13 d = (3 2π ) a fcc (8) 3 3a 2 c 2π 1 3 hcp Eqn. (2) is the expression to calculate cohesive energy for ideal case. It is necessary to introduce ( ) a factor k to account for the difference. Therefore d E ' = k ⋅ π ⋅ γ o .d 2 .1 − D For metals (9) d is about 10-7. Eqn. (9) can be rewritten as D E b = k ⋅ π ⋅ γ o .d 2 (10) Where E b is the cohesive energy of the bulk material. When the particle is small, the size of D is in nanometers or smaller d/D is in the range of 10-2 to 10-1. Rewriting Eqn. (9) as d E p = E b ⋅ 1 − D (11) where E p is the cohesive energy of nanoparticle. Using Eqn(11) the cohesive energy of nanoparticle can be obtained. To account for the particle shape difference, let the shape factor be α, which is define by the equation α= S' S (12) where S is the surface area of the spherical nanoparticle and S = 4πR2 (R is its radius). S’is the surface area of the nanoparticle in any shape, whose volume is the same as spherical nanoparticle. From Eqn.(12), the surface area of a nanoparticle in any shape can be written as S ' = α ⋅ 4πR 2 (13) Assuming the atoms of nanoparticles are ideal spheres then the contribution to the particle surface area of each surface atom is πr 2 . The number of the surface atoms N is the ratio of the Joint Initiative of IITs and IISc – Funded by MHRD Page 5 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices ( ) particle surface area to πr2, which is simplified as N = 4α R 2 r 2 . The volume of the nanoparticle V is the same as the spherical nanoparticle, which equals to 4 3πR 3 . Then the number of the total atoms of the nanoparticle is the ratio of the particle volume to the atomic volume 4 3πr 3 that results to n= R3 r3 (14) The cohesive energy of metallic nanoparticle is the sum of the bond energies of all the atoms. Considering Eqn. (11), the cohesive energy of metallic crystal in any shape (E p ) can be written as Ep = R3 1 1 R2 R 2 E bond + − 4 4 β α β α r3 2 4 r2 r 2 (15) where E bond is the bond energy. The value ½ is due to the fact that each bond belongs to two atoms. We can write Eqn. (15) as Ep = r 1 nβE bond 1 − 6α D 2 (16) where D is the size of the crystal and D = 2 R . Rewriting Eqn. (16) as r E p = E 0 1 − 6α D (17) where E0 = (1 2)nβEbond and E 0 is the cohesive energy of the solids. The well empirical relation of the melting temperature and the cohesive energy for pure metals are given as Tmb = 0.032 Eo kB (18) where T mb is the melting temperature of bulk pure metals. Replacing the cohesive energy of solids E 0 by more general for E p , then Joint Initiative of IITs and IISc – Funded by MHRD Page 6 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices Tm = r 0.032 E o 1 − 6α kB D (19) Eqn.n (19) can be rewritten as r Tm = Tmb 1 − 6α D (20) Eqn. (20) is the general equation for the size and shape dependent melting temperature of crystals.The melting temperature of nanoparticles is apparent only when the particle size is smaller than 100 nm. If the particle size is larger than 100 nm, the melting temperature of the particles approximately equals to the corresponding bulk materials, in other words, the melting temperature of nanoparticles is independent of the particle size. 1.1 Lattice constant of nanoparticle Lattice constant of nanoparticle depends on size and shape and we will arrive an expression for it. A shape factor α will be considered to modify the shape difference between the spherical and the non-spherical nanoparticles α= S' S (21) Where S ' is the surface area of the spherical nanoparticle and S = 4πR 2 . S ' is the surface area of thenanoparticle in any shape, whose volume is the same as the spherical nanoparticle. For sphericalnanoparticle, we have aα=1, and for non-spherical nanoparticle, α > 1. Eqn. (21) can be rewrittenas S ' = αS (22) The increased surface energy after being moved out a nanoparticle from the crystal is Joint Initiative of IITs and IISc – Funded by MHRD Page 7 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices ∆γ = α ⋅ 4πR 2 γ (23) where R is the radius of the particles, and γ is the surface energy per unit area at the temperature T (0 ≤ T < Tm ) ,T m is the melting temperature of metals γ can be obtained from the equation given below γ = γ 0 +T ⋅ dγ dT (24) Where γ 0 is the surface energy per unit area at 0 K, and dγ dT is the coefficient of surface free energy to temperature. For most solids, we have dγ dT < 0 . The surface energy will contract the nanoparticle elastically. This kind of contraction is very small compared with the whole particle size. Suppose the small displacement εR results from this elastic contraction, where ε << 1 . For spherical particles, the elastic energy f ' can be written as follows, f ' = 8πGR 3ε 2 (25) Where G is the shear module, considering the expression S = 4πR 2 We have f =π ' − 1 2 3 2 GS ε 2 (26) The elastic energy of a nanoparticle in non spherical shape is difficult to calculate. However, we can give an approximate estimation by Eqn. (26). The parameter ε is the variable, which can be regarded the same for nanoparticles in any shapes. To account for the elastic energy ( f ) of a nanoparticle in non-spherical shape, we should replace S with S ' in Eq. (26), then 3 f =α 2 ⋅π − 1 2 3 GS 2 ε 2 (27) Eqn. (27) can be rewritten as 3 2 f = α ⋅ 8πGR 3 ε 2 Joint Initiative of IITs and IISc – Funded by MHRD (28) Page 8 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices However, the contraction will make the increased surface energy decrease. Considering contractioneffect, the effective increased surface energy is ∆γ = α ⋅ 4π [R(1 − ε )] γ 2 (29) The total energy variation F is the sum of the increased surface energy and the increased elastic energy, which can be written as 3 F = α ⋅ 4π [R(1 − ε )] γ + α 2 ⋅ 8πGR 3 ε 2 2 (30) (i.e.) F = Aε 2 + Bε + C where A = 4πγR α + 8πGR α 2 3 3 2 (31) B = −8πγR α 2 C = 4πγR 2α In equilibrium, the total energy is minimum, i.e., ε= 1 2G ⋅ R ⋅ α 2 1 + γ 1 dF = 0 , so we have dε (32) For an ideal crystal lattice, the lattice parameter contraction is proportional to the radius of the nanoparticle. ∆a a p − a (1 − ε )R − R = = a a R (33) Where a p and a are the lattice parameters of the nanoparticle and the corresponding bulk material. Joint Initiative of IITs and IISc – Funded by MHRD Page 9 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices Inserting Eqn. (32) into Eq. (33), we have ∆a 1 =− a 1+ K ⋅ D (34) 1 2 Where D (= 2 R ) is the diameter of the nanoparticle, and K = α G γ . Generally, both of the shear module and the surface energy are positive; therefore, the lattice parameter of the metallic nanoparticles will decrease with decreasing of the particle size. Equation (34) is the basic relation for the size and shape dependent lattice parameters of metallic nanoparticles. 2 Mechanical properties of nanomaterial This lecture provides you about the fundamental, measurement challenges and mechanical properties of nanotubes and nanowires Mechanical properties of solids depend on the microstructure, i.e. the chemical composition, the arrangement of the atoms (the atomic structure) and the size of a solid in one, two or three dimensions. The most well-known example of the correlation between the atomic structure and the properties of a bulk material is the variation in the hardness of carbon when it transforms from diamond to graphite. The important aspects related to structure are: • atomic defects, dislocations and strains • grain boundaries and interfaces • porosity • connectivity and percolation • short range order Joint Initiative of IITs and IISc – Funded by MHRD Page 10 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices 2.1 Diffusion Diffusion is a key property determining the suitability of nanocrystalline materials for use in numerous applications, and it is crucial to the assessment of the extent to which the interfaces in nanocrystalline samples differ from conventional grain boundaries. Emphasis is placed on the interfacial characteristics that affect diffusion in nanocrystalline materials, such as structural relaxation, grain growth, porosity, and the specific type of interface. Diffusion is a determining feature of a number of application-oriented properties of nanocrystalline materials, such as enhanced ductility, diffusion-induced magnetic anisotropy, enhanced ionic mass transport, and improved catalytic activity. Moreover, diffusion in nanocrystalline materials is also relevant to the basic physics of interfaces. Since interface diffusion is highly structure sensitive, diffusion studies can provide valuable insight into the question of the extent to which interfaces in nanocrystalline materials differ from conventional grain boundaries (GBs). Interface diffusion process in polycrystalline materials can be classified as follows, 1. Rapid diffusion in the crystallite interface or Grain boundary diffusion coefficient 2. Diffusion from the interfaces and specimen surface into the volume of the crystallites Grain boundary (GB) diffusion plays an important role in many processes taking place in engineering materials at elevated temperatures. Such processes include Coble creep, sintering, diffusion-induced grain boundary migration, discontinuous reactions (such as discontinuous precipitation, discontinuous coarsening, etc.), recrystallization, and grain growth. 2.2 Characterising mechanical properties of low dimensional materials Characterizing the mechanical properties of individual nanotubes/nanowires/nanobelt [called one-dimensional (1-D) nanostructure] is a challenge to many existing testing and measuring techniques because of the following constrains. First, the size (diameter and length) is rather small, prohibiting the applications of the well-established testing techniques. Tensile and Joint Initiative of IITs and IISc – Funded by MHRD Page 11 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices creep testing require that the size of the sample be sufficiently large to be clamped rigidly by the sample holder without sliding. This is impossible for 1-D nanomaterials using conventional means. Secondly, the small size of the nanostructure makes their manipulation rather difficult, and specialized techniques are needed for picking up and installing individual nanostructure. Therefore new methods and methodologies must be developed to quantify the properties of individual nanostructure. A number of methods have been developed for mechanical testing of nanowires (NWs) including resonance in scanning or transmission electron microscopes (SEM/TEM), bending or contact resonance using atomic force microscopy (AFM), uniaxial tension in SEM or TEM, and nanoindentation. In particular, in situ SEM/TEM tensile testing of NWs enabled by microelectromechanical systems has attracted a lot of recent attention. However each technique has its own merits and demerits in invoking the mechanical parameters of nanowires. 2.3 Mechanical properties of carbon nanotube The carbon nanotube (CNT) is a rolled-up sheet of graphene and has three types depending upon the rolling direction such as armchair, zigzag and chiral. The bond between carbons is similar to that of graphite and the mechanical property is closely related to the bond nature between the carbon atoms. The electronic structure of carbon is 1s2 2s2 2p2 and when carbon atoms combine to form graphite, sp2 hybridization will occurs. In this process, one s-orbital and two p-orbitals combine to form three hybrid sp2 -orbitals at 120° to each other within a plane. This in-plane bond is referred to as a σ-bond (sigma–bond). This is a strong covalent bond that binds the atoms in the plane, and results in the high stiffness and high strength of a CNT. The remaining p-orbital is perpendicular to the plane of the σ-bonds. It Joint Initiative of IITs and IISc – Funded by MHRD Page 12 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices contributes mainly to the interlayer interaction and is called the Π-bond (pi–bond). These out-ofplanes, delocalized Π-bonds interact with the Π-bonds on the neighbouring layer. This interlayer interaction of atom pairs on neighbouring layers is much weaker than a sigma bond. Also Unlike bulk materials, the density of the defects in nanotubes is presumably less and therefore the strength is presumablysignificantly higher at the nanoscale. 2.4 Mechanical properties of Silicon and ZnO Nanowire Silicon nanowires deform in a very different way from bulk silicon. Bulk silicon is very brittle and has limited deformability, means that it cannot be stretched or warped very much without breaking." However the silicon nanowires are more resilient, and can sustain much larger deformation. Other properties of silicon nanowires include increasing fracture strength and decreasing elastic modulus as the nanowire gets smaller and smaller. Many studies on mechanical properties of zinc oxide (ZnO) nanowires have beenconducted, however not clear results were obtained. Especiallythe Young’s modulus of ZnO nanowires are on debate inthe literature. For instance, Chen et al.[16] showed that the Young’ modulus of ZnO nanowirewith diameters smaller than about 120 nm is signifi cantly higher than that of bulk ZnO. However, the elastic modulus of vertically aligned [0001] ZnO nanowireswith an average diameter of 45 nm measured by atomicforce microscopy was found to be far smaller than that of bulk ZnO. Also the effectivepiezoelectric coefficient of individual (0001) surface dominated ZnO nanobelts measured by piezoresponse forcemicroscopy was reported to be much larger than the value for bulk wurtzite ZnO. In contrast, Fan et al [22]showedthat the piezoelectric coefficient for ZnO nanopillar withthe diameter about 300 nm is smaller than the bulk values. They suggested that the reduced electromechanical response might be due to structural defects inthe pillars[22]. The fundamental studies on these issues were under research. Joint Initiative of IITs and IISc – Funded by MHRD Page 13 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices 3 Hall-Petch relationship for nanostructured materials This lecture gives the Hall-Petch relations and size effect on it for low dimensional materials 3.1 Hall-Petch relation The basic principle in materials science is that the properties can be deduced from knowledge of the microstructure. The microstructure refers the crystalline structure and allimperfections, including their size, shape, orientation, composition, spatial distribution, etc. The types of imperfections or defects in generally were of: • point defects (vacancies, interstitial and substitutional solutes and impurities) • line defects (edge and screw dislocations) and • planar defects (stacking faults, grain boundaries), For more than half a century, materials engineers have used the HallPetch equation to describe the relationship between a metal’s yield strength and its average grain size. The Hall-Petch relation predicts behaviour accurately in metals with ordinary grain sizes (ie. Few micrometers to few hundred micrometers). Metals typically follow the Hall-Petch relation when the average grain size is 100nm or larger, But Hall-Petch behaviour breaks down at smaller grain sizes. Indeed, an “Inverse Hall-Petch relationship” appears to exist at very small grain sizes, with yield strength actually decreasing as the grain size decreases. Joint Initiative of IITs and IISc – Funded by MHRD Page 14 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices 3.2 Grain size effect and Hall-Petch relation Decreasing the grain size is effective in both increase strength and also increase ductility and as such, is one of the most effective strengthening mechanisms. Fracture resistance also generally improves with reductions in grain size, because the crack formed during deformation, which are the precursors to those causing fracture are limited in size to the grain diameter. The yield strength of many metals and their alloys has been found to vary with grain size according to the Hall-Petch relationship: σ y = σ i + k y D −1 2 Where, k y is the Hall-Petch coefficient, a material constant; D is the grain diameter and σ y is the yield strength of an imaginary polycrystalline metal having an infinite grain size. At this regime, it is suggested that the yield stress of nanocrystals decreases with decreasing grain size and finally it reaches a lowest limit correspondingly to the yield stress of amorphous materials.Grain boundary play a critical role in the yield stress of materials in that there can be several different deformation modes associated with different grain size, grain shape, temperature, stress state and Grain boundary structures. There are four major deformation modes for crystalline materials. 1. Grain boundary sliding (GBS) caused by the atomic shuffling of the BD interface. 2. Collective BG migration 3. Stacking faults 4. Dislocations from the interface to the grain. The first two modes correspond to GB- mediated deformation and the last modes correspond to dislocation mediated deformation. These deformation modes works together to finally determine the overall plastic behaviour and yield stress of crystalline materials. For a coarse grain materials, where Hall-Petch relation holds, the plastic deformation is mainly attributed to dislocation mediated deformation such as full and partial dislocations evolution Joint Initiative of IITs and IISc – Funded by MHRD Page 15 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices annihilations, in which GBs act as a barrier of dislocation movement, sinks and sources of dislocations. This may be understood by considering the sequence of events involved in the initiation of plastic flow from a point source (within one grain) in the polycrystalline aggregates. The strengthening provided by Grain boundary depends on Grain boundary structure, disorientations and interaction between dislocations and grain boundaries. For crystalline materials with grain size of several nanometers, plastic deformation is mainly attributed to the GB-mediated deformation, such as GBS and GB migration. There are generally two different types of GBS. • Rachinger sliding-It is accommodated by some intragranular movement of dislocations within adjacent grains. • Lifshitz sliding -It is refer to the boundary offset that develop as a direct consequences of the stress-directed diffusion of vacancies. This type of sliding is due to thermal activation process, such as diffusion and atom shuffling, although some MD simulations indicate that GB sliding may also happen at 0K, which indicates that GBS also contains an a thermal component. 4 Quiz and Assignment 1. 2. 3. 4. 5. 6. 7. 8. 9. The metal particle size decreases, the melting temperature also _______ Why nanoscale material have low melting point as compare to the bulk? What is cohesive energy? The particle size is greater than ____, the melting temperature of the particles equals to the corresponding bulk materials The particle size increases , the cohesive energy is _________(a) Increases (b) Decreases (c) No change (d) None of the above The carbon nanotube (CNT) is a rolled-up sheet of _______ and has three types depending upon the rolling direction such as ___ ,___,____ What is a sigma bond in CNT? Young’ modulus of ZnO nanowire with diameters smaller than about _____ is significantly higher than that of bulk ZnO The ________ is describing the relationship between a metal’s yield strength and its average grain size. Joint Initiative of IITs and IISc – Funded by MHRD Page 16 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices 10. Metals follows the Hall-Petch relationship at average grain size of ________ 11. What is Inverse Hall-Petch Relationship? 12. What are the two type of Grain Boundary sliding? 4.1 Solutions 1. Decreases 2. Nanoscale materials have a much larger surface-to-volume ratio than bulk materials, drastically altering their thermodynamic and thermal properties. So nanoscale materials have low melting point. 3. It is the energy required to divide the metallic crystal into individual atoms. 4. 100nm. 5. (a) increases 6. Graphene, armchair, zigzag and chiral 7. Sigma bond is a strong covalent bond that binds the atoms in the plane, and results in the high stiffness and high strength of a CNT. 8. 120nm 9. Hall-Petch equation 10. 100nm or larger. 11. The yield strength of the material decreases as the grain size decreases below 100nm. 12. Rachinger sliding-It is accommodated by some intragranular movement of dislocations within adjacent grains. Lifshitz sliding -It is refer to the boundary offset that develop as a direct consequences of the stress-directed diffusion of vacancies. 5 References 1. Niels Hansen, Hall–Petch relation and boundary strengthening, Scripta Materialia 51 (2004) 801–806. 2. J.M. Martinez- Duart, R.J.Martin-Palma, F. Agullo-Rueda, Nanotechnology for Microelectronics and Optoelectronics, Elsevier, 2006. 3. Michael J.O’Connell, Carbon nanotubes properties and applications, Taylor & Francis, New York, 2006. 4. C. Q. Chen, Y. Shi, Y. S. Zhang, J. Zhu, and Y. J. Yan, Phys. Rev. Lett. 96, 075505 (2006). Joint Initiative of IITs and IISc – Funded by MHRD Page 17 of 18 NPTEL – Electrical & Electronics Engineering – Semiconductor Nanodevices 5. H. J. Fan, W. Lee, R. Hauschild, M. Alexe, G. L. Rhun, R. Scholz, A. Dadgar, K. Nielsch, H. Kalt, A. Krost, M. Zacharias, and U. G¨osele, Small 2, 561 (2006). 6. W.H. Qi, M.P. Wang, Size and shape dependent lattice parameters of metallic nanoparticles, 7 (2005), 51-57. 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