Application field / Industry branch: Chemistry / Polymer Industry Electronics Energy Nutrition / Agriculture Geology / Mining Semiconductor Technology Clinical Chemistry / Medicine / Sanitation / Health Care Cosmetics Material Analysis Metallurgy / Electroplating Pharmacy Refineries / Petrochemistry Environment / Water / Waste Other Short Application HR-CS SS GF MAS Determination of fluorine in silicon nitride Experimental Sample preparation The silicon nitride powder to be examined was analyzed directly using the direct solid technology, without further preparation of the sample. Determination The measurements were carried out using the contrAA High-Resolution Continuum Source Graphite Tube AAS and the solid autosampler SSA600L, which is equipped with a liquid dosing unit. The determination of the fluorine concentration was performed via molecule absorption of gallium monofluoride. To create GaF, 10 g/L Ga-(III)-nitrate hydrate (Sigma-Aldrich) is used as molecular formation reagent in water. A solid graphite tube was used as the graphite tube. The graphite autosamplers were permanently coated with Zr (1g/L Zr) before the analytical usage. To stabilize the analyte fluorine and the molecular formation reagent Ga during drying and pyrolysis, a Pd/Mg/Zr modifier (0.1%/0.05%/20 mg/L Pd/Mg/Zr) as well as a 10 g/L NaAc modifier was used in water. The Pd/Mg/Zr modifier was pretreated thermally at 1200°C with the major part of the molecular formation reagent Ga (NO3)3 to activate the Pd. Under these conditions a pyrolysis temperature for the samples of 600℃ and a molecular formation temperature of 1,600℃ were used. As the sample has a relatively high concentration of fluorine in the ppm area, the most sensitive molecule absorption line of GaF was not used. The wavelength of 209.419 allows a fluorine calibration in the concentration range of 100–500 ppm F in a solid with a sample weight of approx. 0.5 mg. Method parameters Element Wave lengt h T Pyr. T Atom. Ramp [°C] [°C] [°C/s] Tube type Modifier Thermal pretreatment [nm] F (GaF) 209,4 19 600 1600 1500 Determination of fluorine in silicon nitride CSMA_SS_01_12_e | 01/ 2012 Solid 10 µL 0.1%/0.05%/20 mg/L Pd/Mg/Zr yes 10 µL 10 g/L Ga(NO3)3 yes 5 µL 10 g/L NaAc 5 µL 10 g/L Ga(NO3)3 no no Evaluation parameters Element Ev.pixel F (GaF) 5 Test time Spectral observation width [s] [nm] 5,0 0,23 Temperature-time program: Determination of fluorine in silicon nitride CSMA_SS_01_12_e | 01/ 2012 Background correction [Pixel] 200 IBC Standard calibration: Liquid calibration standards Automatic creation of standards by SSA600L with liquid dosing unit Calibration standards 50/ 100/ 150/ 200/ 250 ng in graphite tube (from stock solution 10 mg/L F in H2O) 3 measurements per calibration statistic, 6 measurements per solid sample Temporal peak area integration via 5 spectral pixels Linear calibration curve: Element F (GaF) 209.419 nm R² = 0.9998 Element F (GaF) 209.419 nm Standard 4: 200 ng F Signal profile blue: Analyte signal Determination of fluorine in silicon nitride CSMA_SS_01_12_e | 01/ 2012 Si3N4 Spectral vicinity 3D spectra Results Element fluorine Sample Sample weight F concentration mg/kg RSD in % Si3N4 0.14 – 0.60 mg 530 ± 6,0 7,0 QC standard 4 (200 ng F) CRM NCS DC 73325 (base) certified: 321 ± 29 206 ng F 0.18 – 0.60 mg (292 – 350 mg/Kg) Determination of fluorine in silicon nitride CSMA_SS_01_12_e | 01/ 2012 302 ± 3,0 Recovery rate % 3,1 103 5,6 94,1 Summary With the use of a Xe short arc lamp as a lamp continuum source in the HR-CS AAS all absorption lines in the spectral range of 185–900 nm are available for analytical evaluation. This is also the prerequisite for the analytical use of molecule absorptions with a random wave length. This makes it possible for the first time to use fine-structured molecule absorption spectra as gallium mono fluoride for the analytical determination of non-metals as in this case for fluorine. CCD array is used as detector, which guarantees a simultaneous and powerful background correction and offers additional spectral information for the analysis line to be examined by the simultaneous readout of 200 detector pixels. Thanks to the innovative simultaneous background correction spectral interferences can be corrected on the analyte or molecule line regardless of the wavelength. Additional information about the sample is automatically retained by the visualization of the simultaneously recorded spectral environment around the analyte wave length. Method development and method optimization thus becomes much easier than with the classic AAS. Using the procedure presented it is possible to determine fluorine in the silicon nitride matrix without any problems from the direct solid sample, without further sample preparation. The calibration is performed with aqueous fluoride standards. The measurement of an aqueous quality control standard after the Si3N4 sample shows a very good recovery rate of 103%. The same sample platforms are used for this QC determination as for determining fluoride in niobium pentoxide. For this reason, it is possible to suggest that the silicon nitride matrix has a small matrix influence on the fluoride concentration determination with HR-CS MAS. To safeguard a more accurate concentration result, we recommend comparing the determination of the fluoride concentration after melt digestion or calibration with a certified reference material for fluoride in a similar matrix. Unfortunately, neither option is available here in the lab. Alternatively, a base (silicate matrix), in which fluoride is certified, is examined using this method. The fluoride concentration lies within the certified range and a recovery of the average value of 94% thus confirms that the fluoride concentration determined in the silicon nitride is correct. Chemicals provided by Sigma Aldrich® were used. The generated data may be re-used by Analytik Jena. Printout and further use permitted with reference to the source. © 2012 Analytik Jena AG Publisher: Analytik Jena AG Konrad-Zuse-Straße 1 07745 Jena Phone +49 (0) 36 41 / 77-70 Fax +49 36 41 77-92 79 Determination of fluorine in silicon nitride CSMA_SS_01_12_e | 01/ 2012 www.analytik-jena.com [email protected]
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