DMJ70H601SK3
700V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features




ID
BVDSS
RDS(ON) max
700V
0.6Ω @ VGS = 10V
TC = +25°C
8A
Low Gate Input Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching


performance, making it ideal for high efficiency power management
applications.

Adaptor

LCD & PDP TV

Lighting
Case: TO252 (DPAK) (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)




D
TO252 (DPAK) (Type TH)
D
G
Top View
S
Internal Schematic
Top View
Pin Out
Ordering Information (Note 4)
Part Number
DMJ70H601SK3-13
Notes:
Compliance
Standard
Case
TO252 (DPAK) (Type TH)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8N70SK
YYWW
DMJ70H601SK3
Document number: DS39420 Rev. 3 - 2
= Manufacturer’s Marking
8N70SK
= Product Type Marking Code
.
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
1 of 7
www.diodes.com
April 2017
© Diodes Incorporated
DMJ70H601SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Drain-Source Voltage
VDSS
VGSS
Gate-Source Voltage
TC = +25°C
TC = +100°C
Continuous Drain Current (Note 5) VGS = 10V
ID
Maximum Body Diode Forward Current (Note 6)
Value
700
Unit
V
±30
V
8
6.4
A
A
IS
IDM
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
A
Avalanche Current (Note 7)
L = 60mH
IAS
A
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt
L = 60mH
EAS
dv/dt
mJ
V/ns
7
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Value
125
50
72
Thermal Resistance, Junction to Case (Note 5)
RθJC
1.0
TJ, TSTG
-55 to +150
TC = +25°C
Total Power Dissipation (Note 5)
PD
TC = +100°C
Operating and Storage Temperature Range
Electrical Characteristics
Unit
W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
700

VGS = 0V, ID = 250µA
IDSS



1
V
Zero Gate Voltage Drain Current
µA
VDS = 700V, VGS = 0V
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
IGSS


100
nA
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS(TH)
2
RDS(ON)
VSD

3.4
0.5
4
0.6
V
Ω

0.85
1.3
V


686
267

Output Capacitance
Ciss
Coss

pF
Reverse Transfer Capacitance
Crss
8
2.6


VDS = 50V, f = 1MHz,
VGS = 0V
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDD = 560V, ID = 8A,
VGS = 10V
ns
VDD = 350V, VGS = 10V,
RG = 4.7Ω, ID = 8A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Gate Resistance
RG


Total Gate Charge
Gate-Source Charge
Qg

20.9

Qgs

3.0

Qgd
tD(ON)

9.4

Turn-On Delay Time
10
Turn-On Rise Time
tR




Turn-Off Delay Time
tD(OFF)

32
17
261
337

3.0
Gate-Drain Charge
tF


Body Diode Reverse Recovery Time (TJ = +150°C)
Body Diode Reverse Recovery Charge
tRR
tRR
QRR
Body Diode Reverse Recovery Charge (TJ = +150°C)
QRR


Turn-Off Fall Time
Body Diode Reverse Recovery Time
Notes:

23
4.0
VGS = 10V, ID = 2.1A
VGS = 0V, IS = 2.1A


ns

ns


C
IS = 8A, dI/dt = 100A/μs
C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
DMJ70H601SK3
Document number: DS39420 Rev. 3 - 2
2 of 7
www.diodes.com
April 2017
© Diodes Incorporated
DMJ70H601SK3
10.0
5
VGS = 7.0V
4
ID, DRAIN CURRENT (A)
8.0
ID, DRAIN CURRENT (A)
VDS = 10V
VGS = 6.0V
9.0
VGS = 8.0V
7.0
VGS = 10V
6.0
5.0
VGS = 5.0V
4.0
3.0
2.0
2
TJ = -55oC
0
0.0
0
1
2
3
4
5
6
7
8
9
0
10
1
3
4
5
6
7
8
Figure 2. Typical Transfer Characteristic
Figure 1. Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.60
0.55
VGS = 10V
0.50
0.45
0.40
0.35
0.30
0
2
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
TJ = 25oC
TJ = 125oC
1.0
5
4
ID = 2.1A
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1.5
5
10
15
20
25
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
30
3
VGS = 10V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
()
TJ = 85oC
TJ = 150oC
1
VGS = 4.2V
VGS = 4.5V
3
TJ = 150oC
1.2
TJ = 125oC
0.9
TJ = 85oC
0.6
TJ =
25oC
0.3
TJ = -55oC
2.5
2
1.5
1
VGS = 10V, ID = 2.1A
0.5
0
0
0
1
2
3
4
5
6
7
8
9 10
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
DMJ70H601SK3
Document number: DS39420 Rev. 3 - 2
3 of 7
www.diodes.com
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
April 2017
© Diodes Incorporated
1.5
5
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
DMJ70H601SK3
1.2
0.9
0.6
0.3
VGS = 10V, ID = 2.1A
ID = 1mA
3
ID = 250µA
2
1
0
0
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with
Temperature
150
-50
10
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
VGS = 0V
8
7
6
TJ = 150oC
5
4
TJ = 125oC
3
TJ = 85oC
TJ = 25oC
2
TJ = -55oC
1
Ciss
1000
100
Coss
10
Crss
0
1
0
0.3
0.6
0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.2
0
20
40 60 80 100 120 140 160 180 200
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
100
RDS(ON)
Limited
9
ID, DRAIN CURRENT (A)
8
7
6
VGS (V)
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
9
IS, SOURCE CURRENT (A)
4
5
VDS = 560V, ID = 8A
4
3
PW = 1µs
10
PW = 1s
1
PW = 100ms
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on Infinite
Heatsink
VGS = 10V
0.1
2
1
0
PW = 10µs
PW = 10ms
PW = 1ms
PW = 100µs
0.01
0
2
4
6
8
10 12 14 16 18 20 22
Qg (nC)
Figure 11. Gate Charge
DMJ70H601SK3
Document number: DS39420 Rev. 3 - 2
4 of 7
www.diodes.com
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
April 2017
© Diodes Incorporated
DMJ70H601SK3
1
D=0.9
D=0.7
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
0.01
D=0.02
D=0.01
RθJC (t) = r(t) * RθJC
RθJC = 1℃/W
Duty Cycle, D = t1/t2
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMJ70H601SK3
Document number: DS39420 Rev. 3 - 2
5 of 7
www.diodes.com
April 2017
© Diodes Incorporated
DMJ70H601SK3
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK) (Type TH)
E
L3
A
b3
7° ± 2°
L5
c
A4
Ø
D
1.
0
20
L4
7° ± 2°
e
H
A2
7° ± 2°
b(3x)
Gauge Plane
L2
D1
E1
Seating Plane
a
L
A1
2.90REF
TO252 (DPAK)
(Type TH)
Dim Min Max
Typ
A
2.20 2.38
2.30
A1 0.00 0.10
A2 0.97 1.17
1.07
A4
0.10 REF
b
0.72 0.85
0.78
b3 5.23 5.45
5.33
c
0.47 0.58
0.53
D
6.00 6.20
6.10
D1
5.30 REF
e
2.286 BSC
E
6.50 6.70
6.60
E1 4.70 4.92
4.83
H
9.90 10.10 10.30
L
1.40 1.70
1.60
L2
0.51 BSC
L3 0.90 1.25
L4 0.60 1.00
0.80
L5 1.70 1.90
1.80
a
0°
8°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK) (Type TH)
X1
Dimensions
C
X
X1
Y
Y1
Y2
Y1
Y2
C
Value (in mm)
4.572
1.060
5.632
2.600
5.700
10.700
Y
X
DMJ70H601SK3
Document number: DS39420 Rev. 3 - 2
6 of 7
www.diodes.com
April 2017
© Diodes Incorporated
DMJ70H601SK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
www.diodes.com
DMJ70H601SK3
Document number: DS39420 Rev. 3 - 2
7 of 7
www.diodes.com
April 2017
© Diodes Incorporated