Arsenic atom location on passivated silicon (111) surfaces The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters. Citation Patel, J. R., J. A. Golovchenko, P. E. Freeland, and H- J. Gossmann. 1987. Arsenic Atom Location on Passivated Silicon (111) Surfaces. Physical Review B 36, no. 14: 7715-7718. doi:10.1103/physrevb.36.7715. Published Version doi:10.1103/PhysRevB.36.7715 Accessed June 15, 2017 11:48:49 PM EDT Citable Link http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407038 Terms of Use This article was downloaded from Harvard University's DASH repository, and is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-ofuse#LAA (Article begins on next page)
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