CHA6710-99F
5W X Band Medium Power Amplifier
GaN Monolithic Microwave IC
Description
V+
The CHA6710-99F is a two stage Medium
Power Amplifier operating between 8.0 and
12.75GHz. It typically provides 5W of
saturated output power and 36% of power
added efficiency.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a GaN
pHEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
In
Out
STG1
STG2
V-
Main Features
■ Frequency range: 8.0-12.75GHz
■ High output power: 5.5W
■ High PAE: 36%
■ Linear Gain: 23.5dB
■ DC bias: Vd=25Volt @ Idq=0.2A
■ Chip size 2.7x2.15x0.1mm
■ Available in bare die
Main Electrical Characteristics
Tamb.= +25°C, Vd = +25V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Symbol
Parameter
Min
Typ
Max
Freq
Frequency range
8.0
12.75
Gain
Linear Gain
23.5
Pout
Output Power
5.5
PAE
Associated Power Added Efficiency
36
Ref. : DSCHA67107023 - 23 Jan 17
1/24
Unit
GHz
dB
W
%
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Electrical Characteristics (Pulsed mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.0
12.75 GHz
Gain
Linear Gain
23.5
dB
Pout
Output Power (Pin=23dBm)
5.5
W
Associated Power Added Efficiency
PAE
36
%
(Pin=23dBm)
Id
Associated current (Pin=23dBm)
0.58
A
IRL
Input Return Loss
12
dB
ORL
Output Return Loss
12
dB
Idq
Quiescent Current
0.2
A
Vd
Drain Voltage
25
V
Vg
Gate Voltage
-3.2
V
These values are representative of measurements done in test fixture with a bonding wire of
typically 0.25 to 0.3nH.
Electrical Characteristics (CW mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.0
12.75 GHz
Gain
Linear Gain
23
dB
Pout
Output Power (Pin=23dBm)
5
W
Associated Power Added Efficiency
PAE
34
%
(Pin=23dBm)
Id
Associated current (Pin=23dBm)
0.55
A
IRL
Input Return Loss
12
dB
ORL
Output Return Loss
12
dB
Idq
Quiescent Current
0.2
A
Vd
Drain Voltage
25
V
Vg
Gate Voltage
-3.25
V
These values are representative of measurements done in test fixture with a bonding wire of
typically 0.25 to 0.3nH.
Ref. : DSCHA67107023 - 23 Jan 17
2/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Electrical Characteristics (Pulsed mode)
Tamb.= +25°C, Vd = +30V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.0
12.75 GHz
Gain
Linear Gain
24
dB
Pout
Output Power (Pin=24dBm)
6
W
Associated Power Added Efficiency
PAE
33
%
(Pin=24dBm)
Id
Associated current (Pin=24dBm)
0.62
A
IRL
Input Return Loss
12
dB
ORL
Output Return Loss
10
dB
Idq
Quiescent Current
0.2
A
Vd
Drain Voltage
30
V
Vg
Gate Voltage
-3.2
V
These values are representative of measurements done in test fixture with a bonding wire of
typically 0.25 to 0.3nH.
Electrical Characteristics (CW mode)
Tamb.= +25°C, Vd = +30V, Idq = 200mA
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.0
12.75 GHz
Gain
Linear Gain
23.5
dB
Pout
Output Power (Pin=24dBm)
5.5
W
Associated Power Added Efficiency
PAE
32
%
(Pin=24dBm)
Id
Associated current (Pin=28dBm)
0.6
A
IRL
Input Return Loss
12
dB
ORL
Output Return Loss
10
dB
Idq
Quiescent Current
0.2
A
Vd
Drain Voltage
30
V
Vg
Gate Voltage
-3.25
V
These values are representative of measurements done in test fixture with a bonding wire of
typically 0.25 to 0.3nH.
Ref. : DSCHA67107023 - 23 Jan 17
3/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
55V
V
Pin
Maximum peak input power overdrive
30
dBm
Pdiss
Maximum dissipated power
22
W
Tj
Junction temperature
230
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad No
Vd
Vd1, Vd2
Vg
Vg1, Vg2
Parameter
Drain voltage
Gate voltage
HPA on (pulsed mode)
HPA on (CW mode)
HPA off
Values
25
Unit
V
-3.2
-3.25
-8 to -5
V
V
V
Biasing procedure
1. Bias HPA gate voltage at Vg close to Vpinch-off (Typically: Vg ≈ -5V)
2. Apply Vds bias voltage (Typically: Vd = 25V)
3. Increase slowly Vgs up to quiescent bias drain current Idq (pulsed applied on the
gate)
Ref. : DSCHA67107023 - 23 Jan 17
4/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical on-wafer Sij parameters (Pulsed mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA
Freq
(GHz)
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
10.50
11.00
11.50
12.00
12.50
13.00
13.50
14.00
14.50
15.00
15.50
16.00
16.50
17.00
17.50
18.00
18.50
19.00
19.50
20.00
S11
(dB)
-0.07
-0.17
-0.42
-1.06
-2.54
-5.19
-9.27
-15.83
-30.59
-23.68
-19.92
-21.31
-14.07
-9.30
-8.34
-8.48
-8.08
-7.69
-7.79
-8.79
-12.21
-31.67
-13.47
-8.95
-7.13
-4.59
-3.23
-2.78
-2.59
-2.40
-2.30
-2.15
-2.03
-1.94
-1.89
-1.86
-1.75
-1.73
-1.69
-1.68
PhS11
(°)
-20.18
-40.74
-63.11
-88.11
-115.60
-143.17
-170.37
162.91
114.16
-35.15
-56.92
-46.24
-20.92
-47.57
-71.65
-85.30
-94.62
-107.00
-121.98
-139.83
-164.07
167.65
-46.90
-68.98
-79.25
-88.01
-104.79
-117.88
-127.81
-136.81
-144.52
-151.53
-158.60
-165.06
-171.72
-177.75
176.07
170.11
164.07
158.21
Ref. : DSCHA67107023 - 23 Jan 17
S21
(dB)
-24.05
-42.38
-51.86
-60.49
-37.62
-15.69
-11.26
-10.33
-9.47
-8.04
-3.08
4.38
11.49
16.85
20.58
21.99
21.62
21.16
21.37
22.28
23.58
24.42
24.01
22.98
21.88
18.86
12.25
5.01
-1.93
-8.43
-14.68
-20.90
-27.19
-33.65
-41.24
-50.21
-52.58
-56.25
-53.47
-51.26
PhS21
(°)
42.54
-108.95
1.49
-5.98
-78.15
-146.37
125.13
84.91
59.94
57.69
57.77
41.76
4.43
-44.48
-100.22
-158.99
151.94
112.77
77.52
41.59
-0.21
-50.09
-103.19
-154.65
149.29
81.93
21.89
-19.29
-50.56
-76.69
-98.36
-118.05
-134.89
-149.14
-156.98
-143.90
-124.31
-97.80
-92.48
-101.05
5/24
S12
(dB)
-75.62
-79.83
-79.48
-77.66
-72.69
-67.68
-65.65
-67.66
-67.05
-64.77
-65.70
-64.47
-68.40
-62.62
-57.19
-53.81
-52.01
-51.98
-50.47
-48.95
-46.86
-45.41
-45.30
-45.92
-47.02
-50.83
-59.99
-71.32
-61.57
-59.43
-60.59
-61.75
-61.87
-58.44
-54.80
-53.71
-55.60
-58.08
-56.53
-59.00
PhS12
(°)
-42.93
-43.28
40.14
-61.48
-94.52
-136.01
-147.13
152.10
130.45
97.89
56.75
17.40
-100.84
-172.69
125.91
75.61
36.61
2.71
-24.94
-54.01
-87.13
-126.51
-170.72
150.68
107.29
51.77
1.89
-152.28
124.70
100.22
66.24
57.28
66.30
47.64
17.19
-20.40
-56.95
-80.40
-85.44
-90.74
S22
(dB)
-0.35
-0.43
-0.43
-0.63
-1.04
-1.65
-2.49
-3.88
-5.45
-7.39
-9.12
-9.52
-8.44
-7.04
-6.88
-8.84
-10.47
-9.90
-9.21
-9.09
-10.18
-14.53
-31.01
-23.95
-17.18
-7.97
-4.62
-3.41
-2.76
-2.34
-1.80
-1.49
-1.21
-1.00
-0.87
-0.73
-0.65
-0.57
-0.52
-0.47
PhS22
(°)
-28.90
-51.56
-77.43
-102.01
-126.55
-150.38
-174.75
163.16
139.80
117.28
96.86
74.35
42.08
1.50
-42.26
-73.81
-82.94
-89.50
-102.33
-119.74
-143.65
-172.40
166.21
-36.10
-6.99
-19.09
-47.52
-66.64
-79.78
-89.67
-98.20
-106.05
-112.93
-119.28
-125.07
-130.53
-135.46
-140.16
-144.38
-148.79
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Device thermal information
The device thermal performances below are based on UMS rules to evaluate the junction
temperature.
This same procedure is the basis for junction temperature evaluation of the samples used to
derive the Median lifetime and activation energy for the particular technology on which the
CHA6710-99F is manufactured (GaN Power PHEMT 0.25µm).
The temperature Tb is defined as the chip back side temperature.
The thermal resistance (Rth_eq) is given for the full circuit, and assumes CW and pulsed
operation mode are given in the table.
Thermal Resistance(1)
Junction Temperature
Median Life
Rth_eq
Tj
T50
Tb=85°C, Vd=25V, Id_drive=0.58A
Pin=25dBm
Pout=37dBm
Pdiss=10W CW
8.2
140
4x107
°C/W
°C
Hrs
Thermal Resistance(1)
Rth_eq Tb=85°C, Vd=30V, Id_drive=0.62A
8.6
°C/W
Pin=25dBm
Pout=37.8dBm
Junction Temperature
Tj
160
°C
6
Pdiss=13W
CW
Median Life
T50
5x10
Hrs
(1)
Thermal resistance measured to back of carrier plate (20µm Au/Sn soldering + 1.4mm
Cu/Mo/Cu). Thermal analysis is highly recommended, more details are available on
request.
Median Life Time versus Junction Temperature
1.E+10
UMS GH25
1.E+09
T50 (hours)
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
100
120
140
160
180
200
220
240
Junction Temperature (°C)
Ref. : DSCHA67107023 - 23 Jan 17
6/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (Pulsed mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Linear Gain versus Frequency (Temp.=-40 & +25 & +85 °C)
Return Losses versus Frequency (Temp.=-40 & +25 & +85 °C)
Ref. : DSCHA67107023 - 23 Jan 17
7/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (Pulsed mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Output Power versus Frequency (Temp.=-40 & +25 & +85 °C)
Power Added Efficiency versus Frequency (Temp.=-40 & +25 & +85 °C)
Ref. : DSCHA67107023 - 23 Jan 17
8/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (Pulsed mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Drain Current versus Frequency (Temp.=-40 & +25 & +85 °C)
Output Power versus Input Power (Temp=+25°C)
Ref. : DSCHA67107023 - 23 Jan 17
9/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (Pulsed mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Power Added Efficiency versus Input Power (Temp=+25°C)
Drain Current versus Input Power (Temp=+25°C)
Ref. : DSCHA67107023 - 23 Jan 17
10/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (CW mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA
Output Power versus Frequency (Temp.=-40 & +25 & +85 °C)
Power Added Efficiency versus Frequency (Temp.=-40 & +25 & +85 °C)
Ref. : DSCHA67107023 - 23 Jan 17
11/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (CW mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA
Drain Current versus Frequency (Temp.=-40 & +25 & +85 °C)
Output Power versus Input Power (Temp=+25°C)
Ref. : DSCHA67107023 - 23 Jan 17
12/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (CW mode)
Tamb.= +25°C, Vd = +25V, Idq = 200mA
Power Added Efficiency versus Input Power (Temp=+25°C)
Drain Current versus Input Power (Temp=+25°C)
Ref. : DSCHA67107023 - 23 Jan 17
13/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (Pulsed mode)
Tamb.= +25°C, Vd = +30V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Linear Gain versus Frequency (Temp.=-40 & +25 & +85 °C)
Return Losses versus Frequency
Ref. : DSCHA67107023 - 23 Jan 17
14/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (Pulsed mode)
Tamb.= +25°C, Vd = +30V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Output Power versus Frequency (Temp.=-40 & +25 & +85 °C)
Power Added Efficiency versus Frequency (Temp.=-40 & +25 & +85 °C)
Ref. : DSCHA67107023 - 23 Jan 17
15/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (Pulsed mode)
Tamb.= +25°C, Vd = +30V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Drain Current versus Frequency (Temp.=-40 & +25 & +85 °C)
Output Power versus Input Power (Temp=+25°C)
Ref. : DSCHA67107023 - 23 Jan 17
16/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (Pulsed mode)
Tamb.= +25°C, Vd = +30V, Idq = 200mA, Pulse width=25µs, Duty cycle =10%
Power Added Efficiency versus Input Power (Temp=+25°C)
Drain Current versus Input Power (Temp=+25°C)
Ref. : DSCHA67107023 - 23 Jan 17
17/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (CW mode)
Tamb.= +25°C, Vd = +30V, Idq = 200mA
Output Power versus Frequency (Temp.=-40 & +25 & +85 °C)
Power Added Efficiency versus Frequency (Temp.=-40 & +25 & +85 °C)
Ref. : DSCHA67107023 - 23 Jan 17
18/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (CW mode)
Tamb.= +25°C, Vd = +30V, Idq = 200mA
Drain Current versus Frequency (Temp.=-40 & +25 & +85 °C)
Output Power versus Input Power (Temp=+25°C)
Ref. : DSCHA67107023 - 23 Jan 17
19/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Typical Board Measurements (CW mode)
Tamb.= +25°C, Vd = +30V, Idq = 200mA
Power Added Efficiency versus Input Power (Temp=+25°C)
Drain Current versus Input Power (Temp=+25°C)
Ref. : DSCHA67107023 - 23 Jan 17
20/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Mechanical data
Chip thickness: 100µm.
All dimensions are in micrometers
PAD Number
1
2
4
9
8
3, 5, 7, 10
6
Ref. : DSCHA67107023 - 23 Jan 17
Name
IN
VG1
VG2
VD1
VD2
GND
OUT
Description
Input RF port
Negative supply voltage (gate of stage 1)
Negative supply voltage (gate of stage 2)
Positive supply voltage (drain of stage 1)
Positive supply voltage (drain of stage 2)
Ground (NC)
Output RF port
21/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Recommended assembly plan
Note: Supply feed should be bypassed. 25µm diameter gold wire is to be preferred.
Bill of Materials
Label
C1
C2
Value
RF
RF
Ref. : DSCHA67107023 - 23 Jan 17
Description
Capa 120pF +-10% 50V
Capa 10nF +-20% 50V
22/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Recommended circuit bonding table
Label
RFIN
Type
RF
Decoupling
Not required
RFOUT
RF
Not required
Vd
DC
120pF & 10nF
Vg
DC
120pF
Comment
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (500µm)
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (500µm)
Inductance ≤ 1nH (mainly for first decoupling
level) ⇒1.2mm length wires with a diameter of
25µm
Inductance ≤ 1nH (mainly for first decoupling
level) ⇒1.2mm length wires with a diameter of
25µm
The overall biasing network proposed is compliant with a DC pulse applied on the gate; it can
be integrated differently depending on module technology and on modulation characteristics
(gate or drain pulse, pulse length and Duty Cycle). However, the first decoupling level should
always be kept, the second one should be adapted to modulator characteristics and the third
one should be kept and optimized on the non-modulated ports.
Ref. : DSCHA67107023 - 23 Jan 17
23/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA6710-99F
5W X Band Medium Power Amplifier
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Ordering Information
Chip form:
CHA6710-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA67107023 - 23 Jan 17
24/24
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com