研究成果目錄
I. Journal Paper (SCI)
1. Ming-Kwei Lee, Chih-Feng Yen, Jung-Jie Huang, and Shih-Hao Lin, "Electrical
characteristics of postmetallization-annealed MOCVD-TiO2 films on ammonium
sulfide-treated GaAs," J. Electrochem. Soc., Vol. 153, No. 111, pp. F266-F270,
Nov. 2006. (SCI, Impact Factor 2.42, Material Science-coating & Films 1/18)
2. Ming-Kwei Lee, Chih-Feng Yen, and Jung-Jie Huang, "Electrical Characteristics
of Liquid Phase Deposited TiO2 Films on GaAs Substrate with (NH4)2Sx
treatment," J. Electrochem. Soc., Vol. 153, No. 5, pp. F77-F80, May 2006. (SCI,
Impact Factor 2.42, Material Science-coating & Films 1/18)
3. Ming-Kwei Lee, Chih-Feng Yen and Shih-Hao Lin, "Electrical improvements of
MOCVD-TiO2 on (NH4)2Sx Treated InP by Post-Metallization Annealing," J.
Electrochem. Soc., Vol. 154, pp. G229, Oct. 2007. (SCI, Impact Factor 2.42,
Material Science-coating & Films 1/18)
4. Ming-Kwei Lee, Chih-Feng Yen and Shi-Hao Lin, "Low Interface State Density
of Liquid Phase Deposited SiO2 Films on (NH4)2Sx Treated InP," J. Electrochem.
Soc., Vol. 154, pp. G235, Oct. 2007. (SCI, Impact Factor 2.42, Material
Science-coating & Films 1/18)
5. Ming
Kwei
Lee
and
Chih-Feng
Yen,
“Electrical
improvement
of
Fluorine-Passivated Metal-Organic Chemical Vapor Deposited TiO2 Film on
(NH4)2Sx-treated GaAs,” Jpn. J. Appl. Phys., Vol. 46, pp. L1173, Nov. 2007. (SCI,
Impact Factor 1.157, Physics-applied 76/125)
6. Ming-Kwei Lee, Jung-Jie Huang, and Chih-Feng Yen, "Electrical Characteristics
of Liquid-Phase-Deposited Titanium Oxide Films on (NH4)2Sx-Treated InP
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Substrate," J. Electrochem. Soc., Vol. 154, No. 5, pp. G117-G121, Mar. 2007.
(SCI, Impact Factor 2.42, Material Science-coating & Films 1/18)
7. M. K. Lee, C. F. Yen, T.H. Shih, C.L. Ho, H.C. Lee, H.F. Tu and C.H. Fan,
"Electrical Characteristics of Fluorine Passivated MOCVD-TiO2 Film on
(NH4)2Sx Treated GaAs," KEY ENGINEERING MATERIALS, Vol. 368-372,
pp. 232-234, Jan. 2008. (Impact Factor 0.224).
8. M. K. Lee, T. H. Shih, C.L. Ho, H.C. Lee, C.F. Yen, H.F. Tu and C.H. Fan,
"Photocatalyses of Nano-Scaled ZnSe/TiO2 and ZnS/TiO2 Heterojunctio, "KEY
ENGINEERING MATERIALS, Vol. 368-372, pp. 1474-1476, Jan. 2008 (Impact
Factor 0.224).
9. Ming Kwei Lee and Chih-Feng Yen, “High Quality SiO2 Grown on (NH4)2Sx
Treated GaAs by Liquid Phase Deposition,” Jpn. J. Appl. Phys. Vol. 47, pp.
3590-3593, May. 2008. (SCI, Impact Factor 1.157, Physics-applied 76/125)
10. Ming-Kwei Lee and Chih-Feng Yen, “Low-leakage and High-k Liquid Phase
Deposited TiO2 and SiO2/TiO2 Films on (NH4)2S-treated GaAs”, Electrochemical
and Solid-State Letters, Vol. 13, pp. G87, July. 2010. (SCI, Impact Factor 1.88)
11. Chih-Feng Yen and Ming-Kwei Lee, “Low leakage current of Liquid Phase
Deposited SiO2/TiO2 Stacked Dielectrics on (NH4)2S-treated InP”, J. Electrochem.
Soc., Vol. 158, No. 2, pp. G43-G46. 2011. (SCI, Impact Factor 2.42, Material
Science-coating & Films 1/18)
12. Ming-Kwei Lee, Chen-Lin Ho, Chia-Chi Lin, Nai-Roug Cheng, Ming-Hsuan
Houng, Yu-Kai Chien, and Chih-Feng Yen, “Light Extraction Efficiency
Enhancement of GaN Blue LED with ZnO Nanotips Prepared by Aqueous
Solution Deposition”, J. Electrochem. Soc., Vol. 158, No. 5, D286-D289. 2011.
(SCI, Impact Factor 2.42, Material Science-coating & Films 1/18)
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13. Ming-Kwei Lee, Chih-Feng Yen, and Shih-Chen Chiu, “Thin TiO2 Grown by
Metal-Organic Chemical Vapor Deposition on (NH4)2Sx Treated InP”, Applied
Physics A-Materials Science & Processing., vol. 104, pp. 1175-1180, 2011. (SCI,
Impact Factor 1.63, PHYSICS, APPLIED 48/125)
14. Ming-Kwei
Lee
and
Chih-Feng
Yen,
“Characterization
of
Fluorinated-SiO2/PMA-treated TiO2/(NH4)2S-treated GaAs MOS Structure”, J.
Electrochem. Soc., Vol. 158, no. 8, G199-G202, 2011. (SCI, Impact Factor 2.42,
Material Science-coating & Films 1/18)
15. Ming-Kwei Lee, Chih-Feng Yen and Sheng-Hsiung Yang, “Electrical
Characteristics of Ultrathin Atomic Layer Deposited TiO2 and Al2O3/TiO2
Stacked Dielectrics on (NH4)2Sx-treated InP”, IEEE Transactions on Electron
Devices. Vol. 58, no. 11, 3885-3889, 2011. (SCI, Impact Factor 2.255,
ENGINEERING, ELECTRICAL & ELECTRONIC, 32/247)
16. Chih-Feng Yen and Ming-Kwei Lee, “Low Equivalent Oxide Thickness of
TiO2/GaAs MOS Capacitor”, Solid-State Electronics. Vol. 73, 56-59, 2012, (SCI,
Impact Factor 1.44, ENGINEERING, ELECTRICAL & ELECTRONIC, 80/247)
17. Chih-Feng Yen and Ming-Kwei Lee, “Very Low Leakage Current of High
Band-gap Al2O3 Stacked on TiO2/InP MOS Capacitor with Sulfur and Hydrogen
Treatments”, Japanese Journal of Applied Physics. Vol. 51, 081201-1-081201-3,
2012, (SCI, Impact Factor 1.157, Physics-applied 76/125).
18. Chih-Feng Yen and Ming-Kwei Lee, “Characterization of enhancement-mode
N-channel sulfur-treated InP MOSFET with LPD-TiO2 gate oxide”. Journal of
Vacuum Science & Technology B. Vol. 30, 052201-1-052201-3, 2012, (SCI,
Impact Factor 1.27, ENGINEERING, ELECTRICAL & ELECTRONIC, 99/247)
19. Ming-Kwei Lee and Chih-Feng Yen, “Low Interface State Density and Low
Leakage Current of Atomic Layer Deposited TiO2/Al2O3/Sulfur-treated GaAs”,
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Physica status solidi (a). Vol. 209, No. 11, 2147-2150, 2012, (SCI, Impact Factor
1.463, Physics-applied 58/125)
20. Ming-Kwei,
Chih-Feng
Yen,
Chi-Hsuan
Cheng,
and
Jung-Chan
Lee
“Characterization of SiON/InP with Sulfidation, Fluorination and Hydrogenation”,
Accepted, in press. Applied Physics A: Materials Science & Processing. (SCI,
Impact Factor 1.63, PHYSICS, APPLIED 48/125)
21. Chih-Feng Yen, Jung-Chan Lee, Chi-Hsuan Cheng and Ming-Kwei Lee,
“Electrical characterization of liquid phase deposited SiON on (NH4)2S-treated
GaAs”. Vol. 210, No. 9, 1962-1967, 2013, Physica status solidi (a). (SCI, Impact
Factor 1.463, Physics-applied 58/125)
22. Chih-Feng Yen, Ming-Kwei Lee and Jung-Chan Lee, “Electrical characteristics
of Al2O3/TiO2/Al2O3 prepared by atomic layer deposition on (NH4)2S-treated
GaAs”,
revised,
Solid-State
Electronics.
(SCI,
Impact
Factor
1.44,
ENGINEERING, ELECTRICAL & ELECTRONIC, 80/247)
23. Chih-Feng Yen , Jung-Chan Lee and Ming-Kwei Lee, “Characteristics of liquid
phase deposited SiO2 on (NH4)2S-treated GaAs with an ultrathin Si interface
passivation layer”, revised, Journal of Vacuum Science & Technology B. (SCI,
Impact Factor 1.27, ENGINEERING, ELECTRICAL & ELECTRONIC, 99/247)
II. Journal Paper (EI)
1. Ming-Kwei Lee, Nai-Roug Cheng, Cho-Han Fan and Chih-Feng Yen,
“Efficiency Improvement of Solar Cell with ZnO Nanotip Array Prepared by
Aqueous Solution Deposition”, Advanced Materials Research Vol. 339 (2011) pp.
283-286. (EI)
2. Ming Kwei Lee, Chih Feng Yen, Sheng Hsiung Yang, Jung Chan Lee, Chi Hsuan
Cheng and Wei Hau Cheng, “Electrical Characteristics of Stacked Titanium
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Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2S-Treated GaAs”,
Advanced Materials Research, vol. 516-517, 1945, 2012. (EI)
3. Ming Kwei Lee, Chih Feng Yen, “Comprehension of PostMetallization Annealed
MOCVD-TiO2 on (NH4)2S Treated III-V Semiconductors”, Volume 2012, Article
ID 148705, 10 pages, Active and Passive Electronic Components.
III. Conference Paper
<國際會議期刊>
1. Ming-Kwei Lee, Jung-Jie Huang, and Chih-Feng Yen, “Low Leakage Current
and High Dielectric Constant LPD-SiO2/MOCVD-TiO2 Film Grown on
(NH4)2Sx Treated InP Substrate” The 17th Indium Phosphide and Related
Materials Conference (IPRM), Glasgow, Scotland, U.K., 2005.
2. Ming-Kwei
Lee,
Chih-Feng
Yen,
Tsung-Hsiang
Shih,
Chen-Lin
Ho,
Hung-Chang Lee, Hwai-Fu Tu and Cho-Han Fan, “Electrical characteristics of
fluorine passivated MOCVD-TiO2 Film on (NH4)2Sx treated GaAs”, The Fifth
China International Conference on High-Performance Ceramics, Changsha,
Hunan Province, China, pp. 30, May (2007).
3. Ming-Kwei Lee, Tsung-Hsiang Shih, Chen-Lin Ho, Hung-Chang Lee, Chih-Feng
Yen, Hwai-Fu Tu and Cho-Han Fan, “Photocatalyses of Nano-scaled ZnSe/TiO2
and ZnSe/TiO2 hetrojunctions”, The Fifth China International Conference on
High-Performance Ceramics, Changsha, Hunan Province, China, pp. 188, May
(2007).
4. Ming-Kwei Lee and Chih-Feng Yen, “Characterization of Enhancement-mode InP
N-channel MOSFET with LPD-TiO2 Gate Oxide”, 2008 The International
Conference on Electronic Materials (ICEM-08), Sydney, Australia, 2008,7,28 to
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2008, 8,1.
5. Ming-Kwei Lee, Chih-Feng Yen, Cho-Han Fan, “Enhancement-mode Si MOSFET
with MOCVD-TiO2 as gate oxide improved by oxygen annealing and fluorine
passivation”, The International Conference on Thin Film (ICTF14), Ghent,
Belgian, 2008,11,17 to 2008, 11,20.
6.
Ming-Kwei
Lee
and
Chih-Feng
Yen,
“Characteristics
of
Enhancement-Mode Si MOSFET with MOCVD-TiO2 as Gate Oxide Improved by
Oxygen Oxidation and Fluorine Passivation”, Symposia of Thin Films, Harbin,
July. 2010.
7. Ming-Kwei Lee and Chih-Feng Yen, “TiO2 as Gate Oxide on Enhancement-Mode
N-channel Sulfur-Treated InP MOSFET”, The 8th International Symposium,
Shanghai, July. 2010.
8. Lee, Ming-Kwei, Yen, Chih-Feng and Yang, Sheng-Hsiung, “Quality
Improvement of TiO2/GaAs MOS Structure with Post-Metallization Annealing
and (NH4)2Sx Treatments”, 4th 2011 IEEE International NanoElectronics
Conference (INEC) in Chang Gung University, Kweishan, Taoyuan, Taiwan,
June 21-34, 2011.
9. Ming-Kwei Lee, Nai-Roug Cheng, Cho-Han Fan and Chih-Feng Yen, “Orientation
of ZnO Nanotip Array Controlled by Thickness of ZnO Seed Layer”, 2011
International Conference on Advanced Engineering Materials and Technology
(AEMT 2011), Sanya, China, July 29-31, 2011.
10. M. K. Lee, C. F. Yen and S. H. Yang, “Quality Improvements of Titanium
Oxide/Gallium Arsenide MOS Capacitors by Post-metallization Annealing and
Sulfur-treatment”,
SBMicro2011
26th
Symposium
on
Microelectronics
Technology and Devices, Brazil - August 30th to September 2nd, 2011.
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11. Ming-Kwei Lee, Nai-Roug Cheng, Cho-Han Fan and Chih-Feng Yen,
“Efficiency Improvement of Solar Cell with ZnO Nanotip Array Prepared by
Aqueous Solution Deposition”, 2011 International Conference on Materials and
Products Manufacturing Technology, October 28-30, Chengdu, China.
12.
Chih-Feng
Yen
and
Ming-Kwei
Lee,
“Atomic
layer
deposited
Al2O3/Post-metallization Annealed TiO2 on (NH4)2S Treated InP”, 2nd
International Advances in Applied Physics and Materials Science (APMAS 2012),
from 26 to 29 April 2012 in Antalya, Turkey.
13. Ming-Kwei Lee, Nai-Roug Cheng and Chih-Feng Yen, “Density of ZnO Nanotip
Array Controlled by Thickness of ZnO Seed Layer”, 2nd International Advances in
Applied Physics and Materials Science (APMAS 2012), from 26 to 29 April 2012
in Antalya, Turkey.
14. Ming-Kwei Lee and Chih-Feng Yen, “Electrical Characteristics of Stacked
Titanium
Oxide/Aluminum
(NH4)2S-treated
GaAs”.
Oxide
by
Atomic
2012 International
Layer
Conference
Deposition
on
Energy
on
and
Environmental Protection (ICEEP 2012), Hohhot, China, June 23-24, 2012.
15. Ming-Kwei Lee, Nai-Roug Cheng, Cho-Han Fan and Chih-Feng Yen, “Density
of ZnO Nanotip Array Controlled by ZnO Seed Layer”. 2012 International
Conference on Nanomaterials and Electronics Engineering ICNEE 2012, July
24-26, 2012, Kuala Lumpur, Malaysia.
16. Ming-Kwei Lee and Chih-Feng Yen, “Electrical characteristics of fluorinated
LPD-SiO2/MOCVD-TiO2 on (NH4)2S treated InP”. International Union of
Materials Research Societies-International Conference on Electronic Materials
2012. 23-28 September 2012, Yokohama, Japan.
<國內會議期刊>
1. Ming-Kwei Lee, Chih-Feng Yen, Jung-Jie Huang and Shi-Hao Lin “Variation of
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electrical characteristics of LPD-SiO2/oxygen-annealed MOCVD-TiO2 films on
Si substrate by nitrogen annealing” Electron Devices and Materials Symposia
(EDMS), Kaohsiung, Taiwan, R.O.C., Dec. 2005.
2. Ming-Kwei Lee, Chih-Feng Yen, and Jung-Jie Huang “Electrical Characteristics
of LPD TiO2 Films on GaAs Substrate with (NH4)2Sx treatment” Electron
Devices and Materials Symposia (EDMS), Kaohsiung, Taiwan, R.O.C., Dec.
2005.
3. Ming-Kwei Lee, Chih-Feng Yen, and Shih-Hao Lin, “Electrical characteristics of
MOCVD-TiO2 on (NH4)2Sx Treated GaAs by Post-Metallization Annealing”,
2006 International Electron Devices and Materials Symposia, Tainan, Taiwan, pp.
PC018, Dec. (2006).
4. Ming-Kwei Lee, Chih-Feng Yen, Chen-Lin Ho, Jung-Chun Lee, and Nai-Roug
Cheng, “Characterization of Zinc Oxide Thin Films Prepared by RF Sputtering”,
2009 International Electron Devices and Materials Symposia, Taoyuan, Taiwan,
Nov. 2009.
5. Ming-Kwei Lee, Chen-Lin Ho, Chih-Feng Yen and Cho-Han Fan, “Preparation of
ZnO Nanostructure by Aqueous Solution Deposition”, 2009 International Electron
Devices and Materials Symposia, Taoyuan, Taiwan.
6. Ming-Kwei Lee and Chih-Feng Yen, “Low Leakage Current and High Dielectric
Constant of SiO2/TiO2 Films Prepared by Liquid Phase Deposition on
(NH4)2Sx-treated InP”, 2010 International Electron Devices and Materials
Symposia, Jhongli, Taiwan, Nov. 2010.
7. Ming-Kwei Lee, Cho-Han Fan, Chih-Feng Yen and Shih-Chen Chiu, “High
Dielectric Constant Nickel-doped Titanium Oxide Films on Silicon by Liquid
Phase Deposition”, The International Electron Devices and Materials Symposium
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2011 (IEDMS 2011) in National Taiwan university of science and technology,
Taipei, Taiwan during Nov. 17-18, 2011.
8.
Ming-Kwei
Lee
and
Chih-Feng
Yen,
“Atomic
Layer
Deposited
TiO2/Al2O3/Sulfur-treated GaAs with Low Leakage Current and High Dielectric
Constant”, The International Electron Devices and Materials Symposium 2011
(IEDMS 2011), in National Taiwan university of science and technology, Taipei,
Taiwan during Nov. 17-18, 2011.
9. Ming-Kwei Lee, Chih-Feng Yen, Jung-Chan Lee, and Chi-Hsuan Cheng,
“Liquid Phase Deposited Silicon Oxynitride on (NH4)2S Treated Gallium
Arsenide MOS Capacitor”, The International Electron Devices and Materials
Symposium 2012 (IEDMS 2012), Nov. 29-30, 2012 at I-Shou University in
Kaohsiung, Taiwan.
10. Ming‐Kwei Lee, Chih‐Feng Yen, Jung‐Chan Lee, “Characteristics of Schottky
Tunneling Barrier InP MOSFET with TiO2/Al2O3 as Gate Oxides” 2013
International Symposium on "Physics and Mechanics of New Materials and
Underwater Applications" (PHENMA 2013) Kaohsiung, Taiwan, June 5-8, 2013.
11. Chih‐Feng Yen, Jung‐Chan Lee and Ming‐Kwei Lee, “Liquid Phase Deposited
Silicon Dioxide on GaAs With an Ultrathin Si Layer” 2013 International
Symposium on "Physics and Mechanics of New Materials and Underwater
Applications" (PHENMA 2013) Kaohsiung, Taiwan, June 5-8, 2013.
IV. Patents
1. 李明逵、黃俊杰和顏志峰，“一種高介電常數與低漏電流磷化銦金氧半電容的
製作方法”，中華民國，發明專利第 I 249841 號
2. 李 明逵、黃俊杰、顏志峰 和 吳宗訓， “Method for making a metal oxide
semiconductor device”，美國，發明專利，US 7,341,960 B2
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